XPES studies of oxides of second- and third-row transition metals including rare earths

X-ray photoelectron spectroscopy has been employed to investigate oxides of second- and third-row transition metals, including those of rare earths. Systematics in the spin—orbit splittings and binding energies of core levels of the metals are described. In most of the cases studied, the dependence of the spin—orbit splittings on the atomic number Z is given by the relation ΔE = a(Z - Z₀)⁴, where a is the quantum defect parameter and Z₀ is the effective screening. Core-level binding energies are found to increase with the oxidation state of the metal. Most of the core-level binding energies are related to the atomic number Z by the expression E = x(Z - Z₀)², giving rise to linear plots of ln E versus ln Z. Specific features of individual oxides, with respect to satellites, multiplet structure, configuration mixing, and other properties are also discussed. The spectra of PrO₂, Pr₆O₁₁, TbO₂ and Tb₄O₇ are reported for the first time.     

Density functional theoretical study of Cun, Aln (n = 4-31) and copper doped aluminum clusters: Electronic properties and reactivity with atomic oxygen

A DFT study of the electronic properties of copper doped aluminum clusters and their reactivity with atomic oxygen is reported. Firstly we performed calculations for the pure Cu_n and Al_n (n = 4, 9, 10, 13, 25 and 31) clusters and we determined their atomization energy for some frozen conformations at the B3PW91 level. The calculated work functions and M-M (M = Cu, Al) bond energies of the largest clusters are comparable with experimental data. Secondly, we focused our attention on the change of the electronic properties of the systems upon the substitution of an Al atom by a Cu one. This latter stabilizes the system as the atomization energy of the 31-atoms cluster increases of 0.31 eV when the substitution is done on the surface and of 1.18 eV when it is done inside the cluster. We show that the electronic transfer from the Al cluster to the Cu atom located at the surface is large (equal to 0.7 e⁻) while it is negligible when Cu is inserted in the Al_n cluster. Moreover, the DOS of the Al₃₁ and Al₃₀Cu systems are compared. Finally, the chemisorption energies of atomic oxygen in threefold sites of the Al₃₁, Cu₃₁ and Al₃₀Cu clusters are calculated and discussed. We show that the chemisorption energy of O is decreasing on the bimetallic systems compared to the pure aluminum cluster.     

The peculiarities of the low-energy ion scattering by polycrystal targets

In the present work, experimental and computer simulation studies of low-energy (E₀ = 80-500 eV) Cs⁺ ions scattering on Ta, W, Re target surfaces and K⁺ ions scattering on Ti, V, Cr target surfaces have been performed for more accurate definition of mechanism of scattering, with a purpose of evaluation of an opportunity of use of slow ions scattering as a tool of surface layers analysis. The choice of the targets was based on the fact that the ratios of atomic masses of target atoms and ions μ = m₂/m₁ were almost the same for all cases considered and greater than 1 (direct mass ratio) however, the difference of binding energies of target atoms in the cases of Cs⁺ and K⁺ scattering was almost twice as much. It has been noticed that the dependencies of the relative energy retained by scattering ions at the maximum of energy distribution versus the initial energy E_m/E₀ (E₀) have a similar shape in all cases. The relative energy retained by scattering ions increases while the initial energy of incidence ions decreases. The curves are placed above each other relative to the binding energies of target atoms, to show what this says about the influence of binding energy on a process of scattering of low-energy ions. The correlation between value of energy change maintained by an ion for different values of E₀ in the case of scattering by targets with different masses of atoms and its binding energies is experimentally established. The contrary behavior of the E_m/E₀ (E₀) dependencies concerning the target atom binding energy quantity E_b for cases with direct (μ > 1) and inverse (μ < 1) mass ratio of colliding particles is established. The comparison of experimental energy distributions with calculated histograms shows that the binary collision approximation cannot elucidate the abnormally great shift in the maxima of relative energy distributions towards greater energy retained by scattering ions.     

Adsorption of SO2 on Li atoms deposited on MgO (1 0 0) surface: DFT calculations

The adsorption of sulfur dioxide molecule (SO₂) on Li atom deposited on the surfaces of metal oxide MgO (1 0 0) on both anionic and defect (F_s-center) sites located on various geometrical defects (terrace, edge and corner) has been studied using density functional theory (DFT) in combination with embedded cluster model. The adsorption energy (E_ads) of SO₂ molecule (S-atom down as well as O-atom down) in different positions on both of O⁻² and F_s sites is considered. The spin density (SD) distribution due to the presence of Li atom is discussed. The geometrical optimizations have been done for the additive materials and MgO substrate surfaces (terrace, edge and corner). The oxygen vacancy formation energies have been evaluated for MgO substrate surfaces. The ionization potential (IP) for defect free and defect containing of the MgO surfaces has been calculated. The adsorption properties of SO₂ are analyzed in terms of the E_ads, the electron donation (basicity), the elongation of S-O bond length and the atomic charges on adsorbed materials. The presence of the Li atom increases the catalytic effect of the anionic O⁻² site of MgO substrate surfaces (converted from physisorption to chemisorption). On the other hand, the presence of the Li atom decreases the catalytic effect of the F_s-site of MgO substrate surfaces. Generally, the SO₂ molecule is strongly adsorbed (chemisorption) on the MgO substrate surfaces containing F_s-center.     

Calculation of the surface energy of bcc transition metals by using the second nearest-neighbor modified embedded atom method

The surface energies for 24 surfaces of all bcc transition metals Fe, Cr, Mo, W, V, Nb and Ta have been calculated by using the second nearest-neighbor modified embedded atom method. The results show that, for all bcc transition metals, the order among three low-index surface energies E_(1 1 0) < E_(1 0 0) < E_(1 1 1) is in agreement with experimental results and E_(1 1 0) is also the lowest surface energy for various surfaces. So that from surface energy minimization, the (1 1 0) texture should be favorable in the bcc films. This is also consistent with experimental results. The surface energy for the other surfaces increases linearly with increasing angle between the surfaces (h k l) and (1 1 0). Therefore, a deviation of a surface orientation from (1 1 0) can be used to estimate the relative values of the surface energy.     

Rare-earth gate oxides for GaAs MOSFET application

Rare-earth oxide films for gate dielectric on n-GaAs have been investigated. The oxide films were e-beam evaporated on S-passivated GaAs, considering interfacial chemical bonding state and energy band structure. Rare-earth oxides such as Gd₂O₃, (Gd_xLa_1−x)₂O₃, and Gd-silicate were employed due to high resistivity and no chemical reaction with GaAs. Structural and bonding properties were characterized by X-ray photoemission, absorption, and diffraction. The electrical characteristics of metal-oxide-semiconductor (MOS) diodes were correlated with material properties and energy band structures to guarantee the feasibility for MOS field effect transistor (FET) application.Gd₂O₃ films were grown epitaxially on S-passivated GaAs (0 0 1) at 400 °C. The passivation induced a lowering of crystallization temperature with an epitaxial relationship of Gd₂O₃ (4 4 0) and GaAs (0 0 1). A better lattice matching relation between Gd₂O₃ and GaAs substrate was accomplished by the substitution of Gd with La, which has larger ionic radius. The in-plane relationship of (Gd_xLa_1−x)₂O₃ (4 4 0) with GaAs (0 0 1) was found and the epitaxial films showed an improved crystalline quality. Amorphous Gd-silicate film was synthesized by the incorporation of SiO₂ into Gd₂O₃. These amorphous Gd-silicate films excluded defect traps or current flow path due to grain boundaries and showed a relatively larger energy band gap dependent on the contents of SiO₂. Energy band parameters such as ΔE_C, ΔE_V, and E_g were effectively controlled by the film composition.     

Kinetic Approach to the Interpretation of Analyte Losses During the Preatomization Thermal Treatment in Electrothermal Atomization Atomic Absorption Spectrometry

A method for evaluating E_a(loss), the apparent activation energy of the analyte loss process during the high-temperature thermal pretreatment stage in electrothermal atomization atomic absorption spectrometry (ETA-AAS) has been developed. The method is based on extracting information from the declining portion of thermal pretreatment curves (in this case presented as absorbance vs pyrolysis time at various fixed temperatures). Five volatile analytes (As, Pb, Sb, Se, and Sn) have been studied in the presence of tungsten chemical modifier (20 μg of W in H₂O₂).

The data on E_a (loss) have been utilized together with those obtained from treating the atomization peaks E_a and with literature data on known values of bond energies and enthalpies of certain chemical reactions. Possible mechanisms of analyte losses and atomization are discussed.     

Nanoindentation on carbon thin films obtained from a C60 ion beam

Raman spectra, atomic force microscope (AFM) images, hardness (H) and Young's modulus (E) measurements were carried out in order to characterize carbon thin films obtained from a C₆₀ ion beam on silicon substrates at different deposition energies (from 100 up to 500 eV). The mechanical properties were studied via the nanoindentation technique. It has been observed by Raman spectroscopy and AFM that the microstructure presents significant changes for films deposited at energies close to 300 eV. However, these remarkable changes have not been noticeable on the mechanical properties: apparently H and E increase with higher deposition energy up to ∼11 and ∼116 GPa, respectively. These values are underestimated if the influence of the film roughness is not taken into account.     

Hydrocarbon film growth by energetic CH3 molecule impact on SiC (0 0 1) surface

Classic molecular dynamics (MD) calculations were performed to investigate the deposition of thin hydrocarbon film. SiC (1 0 0) surfaces were bombarded with energetic CH₃ molecules at impact energies ranging from 50 to 150 eV. The simulated results show that the deposition yield of H atoms decreases with increasing incident energy, which is in good agreement with experiments. During the initial stages, with breaking Si-C bonds in SiC by CH₃ impacting, H atoms preferentially reacts with resulting Si to form Si-H bond. The C/H ratio in the grown films increases with increasing incident energy. In the grown films, CH species are dominant. For 50 eV, H-Csp3 bond is dominant. With increasing energy to 200 eV, the atomic density of H-Csp2 bond increases.     

Density functional theory calculation of 2p core-electron binding energies of Si,P, S,Cl, and Ar in gas-phase molecules

Density functional theory (DFT) calculations have been performed on the gas-phase 2p core-electron binding energies (CEBEs) of Si, P, S, Cl, and Ar in 145 cases using the following procedure: ΔE_KS (scalar-ZORA + E_xc)/TZP//HF/6-31G(d). ΔE_KS is the difference in the total Kohn–Sham energies of the 2p-ionized cation and the neutral parent molecule calculated by DFT using different exchange-correlation functionals E_xc with triple-zeta polarized basis set, at molecular geometry optimized by HF/6-31G(d), and relativistic effects have been estimated by scalar zeroth-order regular approximation. Among the 26 functionals tested, the form of E_xc giving the best overall performance was found to be the combination of OPTX exchange and LYP correlation functionals. For that functional, the average absolute deviation (AAD) of the 145 calculated CEBEs from experiment is 0.26 eV. There are seven other exchange-correlation functionals that led to AADs of less than 0.30 eV. Some functionals give lower AADs than E_xc = OPTX-LYP for some individual elements. In the case of Si, for example, the combination of either mPW91-PBE or Becke88-Perdew86 led to an AAD of only 0.10 eV for 56 silicon-containing molecules. Another example is the case of the argon atom, for which the choice of E_xc = OPTX-Perdew86 yields a value for CEBE equal to the experimental value.     

Chemical reaction of sputtered Cu film with PI modified by low energy reactive atomic beam

Polyimide (PMDA-ODA) surface was irradiated by low energy reactive atomic beam with energy 160-180 eV to enhance the adhesion with metal Cu film. O₂⁺ and N₂⁺ ions were irradiated at the fluence from 5 × 10¹⁵ to 1 × 10¹⁸ cm⁻². Wetting angle 78° of distilled deionized (DI) water for bare PI was greatly reduced down to 2-4° after critical ion flounce, and the surface energy was increased from 37 to 81.2 erg/cm. From the analysis of O 1s core-level XPS spectra, such improvement seemed to result from the increment of hydrophilic carbonyl oxygen content on modified PI surface. To see more carefully correlation of the peel strength with interfacial reaction between Cu and PI, flexible copper clad laminate with Cu (9 μm)/Cu (200 nm) on modified PI substrate (25 μm) was fabricated by successive sputtering and electroplating. Firstly, peel strength was measured by using t-test and it was largely increased from 0.2 to 0.5 kgf/cm for Ar⁺ only irradiated PI to 0.72-0.8 kgf/cm for O₂⁺ or N₂O⁺ irradiated PI. Chemical reaction at the interface was reasoned by analyzing C 1s, O 1s, N 1s, and Cu 2p core-level X-ray photoelectron spectroscopy over the as-cleaved Cu-side and PI side surface through depth profiling. From the C 1s spectra of cleaved Cu-side, by the electron transfer from Cu to carbonyl oxygen, carbonyl carbon atom became less positive and as a result shifted to lower binding energy not reaching the binding energy of C₂ and C₃. The binding energy shift of the peak C₄ as small as 1.7 eV indicates that carbonyl oxygen atoms were not completely broken. From the analysis of the O 1s spectra, it was found that new peak at 530.5 eV (O₃) was occurred and the increased area of the peak O₃ was almost the same with reduced area of the peak carbonyl oxygen peak O₁. Since there was no change in the relative intensity of ether oxygen (O₂) to carbonyl oxygen (O₁), and thus O₃ was believed to result from Cu oxide formation via a local bonding of Cu with carbonyl oxygen atoms. Moreover, from X-ray induced Auger emission spectra Cu LMM which was very sensitive to chemical bonding, Cu oxide or CuOC complex formation instead of CuNO complex was clearly identified by the observation of the peak at 570 eV at higher 2 eV than that of metal Cu. In conclusion, when Cu atoms were sputtered on modified PI by low energy ion beam irradiation, it can be suggested that two Cu atoms locally reacted with carbonyl oxygen in PMDA units and formed Cu⁺O⁻C complex linkage without being broken from carbon atoms and thus the chemically bound Cu was in the form of Cu₂O.     

Memory switching of germanium tellurium amorphous semiconductor

The dc conductivity and switching properties of amorphous GeTe thin film of thickness 262 nm are investigated in the temperature range 303-373 K. The activation energy ΔE_σ, the room temperature electrical conductivity σ_RT and the pre-exponential factor σ₀ were measured and validated for the tested sample. The conduction activation energy ΔE_σ is calculated. The I-V characteristic curves of the thin film samples showing a memory switching at the turnover point (TOP) from high resistance state (OFF state) to the negative differential resistance state (NDRS) (ON state). It is found that the mean values of the threshold electrical field E_th decreased exponentially with increasing temperatures in the investigated range. The switching activation energy ΔE_th is calculated. Measurements of the dissipated threshold power P_th and the threshold resistance R_th were carried out at TOP point at different temperatures of the samples. The activation energies ΔE_R and ΔE_P caused by resistance and power respectively are deduced. The results obtained support thermal model for initiating switching process in this system.     

Thermal stability and switching field of hard/soft-stacked perpendicular media

The time dependence of remanence coercivity and thermal stability were investigated for hard/soft-stacked media consisting of a magnetically hard granular layer underneath a very thin soft layer with a large saturation magnetization, M_s. The values of remanence coercivity at measurement times t′=10³ and 10⁻⁵ s (pulse field) were measured, and defined as H_r and H_r^P. The remanence coercivity on the recording time scale, H_r (1 ns), and the energy barrier, ΔE/kT, were evaluated by fitting H_r and H_r^P to Sharrock's equation taking into account the power law variation of the energy barrier, n. The value of H_r (1 ns) for a (Co–Pt)–SiO₂ (9 nm)/Co–SiO₂ (2 nm) stacked medium with an interfacial coupling control layer was about 9 kOe, which was less than half of that of a (Co–Pt)–SiO₂ (9 nm) conventional medium (=21.3 kOe). The value of ΔE/kT for the stacked medium was about 111 (n=0.7), and was not significantly different from the conventional medium. Moreover, no significant difference in the rate of decrease of H_r with increasing temperature was observed between media with and without interlayers. These results indicate that the use of a thin soft layer with high M_s was effective at significantly reducing H_r with no notable change in thermal stability.     

Oxidation of a cesium-covered Ni (1 1 0) surface studied by metastable-induced electron spectroscopy

An initial stage of oxidation of a cesium-covered Ni (1 1 0) surface has been studied by metastable-induced electron spectroscopy (MIES) and low-energy electron diffraction (LEED). The MIES brought spectra with Cs 6s induced peak (P_6s), Cs 5p (P_5p), O 2p induced peak (P_ox) and a structure related to the substrate Ni 3d states (P_3d). The work function change Δφ showed an oscillatory behavior in the progress of surface oxidation. The process is divided into three stages: (i) at low O₂ exposures, Δφ > 0 with unchanging P_5p and P_6s; (ii) at moderate exposures, Δφ < 0 with a drastic decrease in the P_6s intensity; (iii) at higher exposures, Δφ > 0 with shifts of peaks P_5p and P_ox to higher energies, together with an appearance of peak P_3d. A three-step model of initial oxidation of alkali-covered Ni (1 1 0) surfaces is presented.     

Electrical and optical properties of GexFexSe100−2x chalcogenide thin films

Optical absorption at room temperature and electrical conductivity at temperatures between 283 and 333 K of vacuum evaporated Ge_xFe_xSe_100−2x (0≤x≤15) amorphous thin films have been studied as a function of composition and film thickness. It was found that the optical absorption is due to indirect transition and the energy gap increases with increasing both Ge and Fe content; on the other hand, the width of the band tail exhibits the opposite behavior. The optical band gap E_opt was found to be almost thickness independent. The electrical conductivity show two types of conduction, at higher temperature the conduction is due to extended states, while the conduction at low temperature is due to variable range hopping in the localized states near Fermi level. Increasing Ge and Fe contents were found to decrease the localized state density N(E_F), electrical conductivity and increase the activation energy for conduction, which is nearly thickness independent. Variation of the atomic densities ρ, molar volume V, glass transition temperature T_g cohesive energy C.E and number of constraints N_Co with average coordination number Z was investigated. The relationship between the optical gap and chemical composition is discussed in terms of the cohesive energy C.E, average heat of atomization and coordination numbers.     

CO2 adsorption on Cr(1 1 0) and Cr2O3(0 0 0 1)/Cr(1 1 0)

We attempt to correlate qualitatively the surface structure with the chemical activity for a metal surface, Cr(1 1 0), and one of its surface oxides, Cr₂O₃(0 0 0 1)/Cr(1 1 0). The kinetics and dynamics of CO₂ adsorption have been studied by low energy electron diffraction (LEED), Aug er electron spectroscopy (AES), and thermal desorption spectroscopy (TDS), as well as adsorption probability measurements conducted for impact energies of E_i = 0.1-1.1 eV and adsorption temperatures of T_s = 92-135 K. The Cr(1 1 0) surface is characterized by a square shaped LEED pattern, contamination free Cr AES, and a single dominant TDS peak (binding energy E_d = 33.3 kJ/mol, first order pre-exponential 1 × 10¹³ s⁻¹). The oxide exhibits a hexagonal shaped LEED pattern, Cr AES with an additional O-line, and two TDS peaks (E_d = 39.5 and 30.5 kJ/mol). The initial adsorption probability, S₀, is independent of T_s for both systems and decreases exponentially from 0.69 to 0.22 for Cr(1 1 0) with increasing E_i, with S₀ smaller by ∼0.15 for the surface oxide. The coverage dependence of the adsorption probability, S(Θ), at low E_i is approx. independent of coverage (Kisliuk-shape) and increases initially at large E_i with coverage (adsorbate-assisted adsorption). CO₂ physisorbs on both systems and the adsorption is non-activated and precursor mediated. Monte Carlo simulations (MCS) have been used to parameterize the beam scattering data. The coverage dependence of E_d has been obtained by means of a Redhead analysis of the TDS curves.     

A kinetic Monte Carlo/UBI-QEP model of O2 adsorption on fcc (1 1 1) metal surfaces

The previously developed kinetic Monte Carlo model of molecular oxygen adsorption on fcc (1 0 0) metal surfaces has been extended to fcc (1 1 1) surfaces. The model treats uniformly all elementary steps of the process—O₂ adsorption, dissociation, recombination, desorption, and atomic oxygen hopping—at various coverages and temperatures. The model employs the unity bond index—quadratic exponential potential (UBI-QEP) formalism to calculate coverage-dependent energetics (atomic and molecular binding energies and activation barriers of elementary steps) and a Metropolis-type algorithm including the Arrhenius-type reaction rates to calculate coverage- and temperature-dependent features, particularly the adsorbate distribution over the surface. Optimal values of non-energetic model parameters (the spatial constraint, a travel distance of “hot” atoms, attempt frequencies of elementary steps) have been chosen. Proper modifications of the fcc (1 0 0) model have been made to reflect structural differences in the fcc (1 1 1) surface, in particular the presence of two different hollow sites (fcc and hcp). Detailed simulations were performed for molecular oxygen adsorption on Ni(1 1 1). We found that at very low coverages, only O₂ adsorption and dissociation were effective, while O₂ desorption and O₂ and O diffusion practically did not occur. At a certain O + O₂ coverage, the O₂ dissociation becomes the fastest process with a rate one-two orders of magnitude higher than adsorption. Dissociation continuously slows down due to an increase in the activation energy of dissociation and due to the exhaustion of free sites. The binding energies of both molecular and atomic oxygen decrease with coverage, and this leads to greater mobility of atomic oxygen and more pronounced desorption of molecular oxygen. Saturation is observed when the number of adsorbed molecules becomes approximately equal to the number of desorbed molecules. Simulated coverage dependences of the sticking probability and of the atomic binding energy are in reasonable agreement with experimental data. From comparison with the results of the previous work, it appears that the binding energy profiles for Ni(1 1 1) and Ni(1 0 0) have similar shapes, although at any coverage the absolute values of the oxygen binding energy are higher for the (1 0 0) surface. For metals other than Ni, particularly Pt, the model projections were found to be too parameter-dependent and therefore less certain. In such cases further model developments are needed, and we briefly comment on this situation.     

Self-diffusion dynamic behavior of atomic clusters on Re(0 0 0 1) surface

Using molecular dynamics simulations and a modified analytic embedded atom potential, the self-diffusion dynamics of rhenium atomic clusters up to seven atoms on Re(0 0 0 1) surface have been studied in the temperature ranges from 600 K to 1900 K. The simulation time varies from 20 ns to 200 ns according to the cluster sizes and the temperature. The heptamer and trimer are more stable comparing to other neighboring non-compact clusters. The diffusion coefficients of clusters are derived from the mean square displacement of cluster's mass-center, and diffusion prefactors D₀ and activation energies E_a are derived from the Arrhenius relation. It is found that the Arrhenius relation of the adatom can be divided into two parts at different temperature range. The activation energy of clusters increases with the increasing of the atom number in clusters. The prefactor of the heptamer is 2-3 orders of magnitude higher than a usual prefactor because of a large number of nonequivalent diffusion processes. The trimer and heptamer are the nuclei at different temperature range according to the nucleation theory.     

Laser synthesis of semiconductor nanostructures with narrow band gap

Semiconductor nanostructures with narrow band gap were synthesized by means of laser chemical vapor deposition (LCVD) of elements from iron carbonyl vapors [Fe(CO)₅] under the action of Ar⁺ laser radiation (λ_L = 488 nm) on the Si substrate surface. The temperature dependence of the specific conductivity of these nanostructures in the form of thin films demonstrated typical semiconductor tendency and gave the possibility to calculate the band gap for intrinsic conductivity (E_g) and the band gap assigned for impurities (E_i), which were depended upon film thickness and applied electrical field. Analysis of deposited films with scanning electron microscopy (SEM) and atomic force microscopy (AFM) demonstrated their cluster structure with average size not more than 100 nm. Semiconductor properties of deposited nanostructures were stipulated with iron oxides in different oxidized phases according to X-ray photoelectron spectroscopy (XPS) analysis.These deposited nanostructures were irradiated with Q-switched YAG laser (λ_L = 1064 nm) at power density about 6 × 10⁷ W/cm². This irradiation resulted in the crystallization process of deposited films on the Si substrate surface. The crystallization process resulted in the synthesis of iron carbide-silicide (FeSi_2−xC_x) layer with semiconductor properties too. The width of the band gap E_g of the synthesized layer of iron carbide-silicide was less than for deposited films based on iron oxides Fe₂O_3−x (0 ≤ x ≤ 1).