DFT study on the electronic structure and chemical state of Americium in an (Am,U) mixed oxide

We investigated the electronic state of an (Am,U) mixed oxide with the fluorite structure using the all-electron full potential linear augmented plane wave method and compared it with those of Am₂O₃, AmO₂, UO₂, and La_0.5U_0.5O₂. The valence of Am in the mixed oxide was close to that of Am₂O₃ and the valence of U in the mixed oxide was pentavalent. The electronic structure of AmO₂ was different from that of Am₂O₃, particularly just above the Fermi level. In addition, the electronic states of Am and U in the mixed oxide were similar to those of trivalent Am and pentavalent U oxides. These electronic states reflected the high oxygen potential of AmO₂ and the heightened oxygen potential resulting from the addition of Am to UO₂ and also suggested the occurrence of charge transfer from Am to U in the solid solution process.     

A first-principles theoretical simulation on the electronic structures and optical absorption properties for O vacancy and Ni impurity in TiO2 photocatalysts

The band structures and optical absorption spectra of O vacancy and Ni ion doped anatase TiO₂ were successfully calculated and simulated by a plane wave pseudopotential method based on density functional theory (DFT). From the calculated results, a phenomenon of “impurity compensation” was found: the lower formation energy for O vacancy than Ni impurity indicated that introducing the intrinsic defect of O vacancy into Ni ion doped TiO₂ sample was very possible; the positive binding energy for the combination of O vacancy and Ni impurity indicated that two defects were apt to bind to each other; While Ni impurity produced the donor levels in the forbidden band of TiO₂, Ni impurity with O vacancy produced the acceptor levels upon which the excitation led to the photogenerated electrons with high energy and transferability. The combination of absorption spectra for O vacancy and Ni impurity with O vacancy models could reproduce the experimental measurement very well.     

Energy convexity as a consequence of decoherence and pair-extensive interactions in many-electron systems

Using the concept of self-entanglement, through which a pure state constructed in an augmented Hilbert space can describe a mixed state and through which the effects of physical decoherence can be mapped onto systems separated by an infinite distance, with the role of environmental states assumed by system states in disjoint Hilbert spaces, we show that expectation values of Hamiltonians subscribing to decoherence and satisfying the condition of extensivity, defined in the text, obey the energy convexity relation. The analysis based on self-entanglement also leads to a surprising interpretation of the failure of the convexity relation for model Hamiltonians such as the Hubbard model: The failure is due to the existence of self-entangled states with lower energies than the ground state so that in such models decoherence, i.e., disentangling from the self-entangled states, would cost energy and disallow the observation of the state through measurement. The Hubbard model is discussed extensively in an appendix where we also discuss and resolve some of the counterarguments to the convexity relation that have been advanced in the literature.     

Predicting metallic conductivity in oxides from simple chemical criteria

The delocalization of d electrons in oxides can be described with a simple model taking into account the electronegativity and the chemical hardness. The metallic conductivity appears when (i) the electronegativity is high involving large conduction and valence bandwidths and (ii) the chemical hardness is low. From this we propose a delocalization criterion M_crit∼η+2.8χ whereby if M_crit is larger than 18 eV a metallic conductivity should occur. The validity of this criterion is checked in actual oxide systems. We also discuss its limits in p-elements oxides with the help of electronic band structure calculations within the density functional theory framework. We propose that this simple χη model can be used for the understanding of the electronic properties of different classes of oxides.     

General relationships for isovalent cation substitution into oxides with the rocksalt structure

Isovalent cation substitution into rocksalt oxides, MO, has been investigated using atomistic simulation. A strain related parameter, ε, is established that relates the size of a substitutional cation to the host lattice ion for which it has been substituted. This has allowed us to identify relationships between solution energy, defect volume and a strain parameter, which are general for any rocksalt oxide host lattice and as such are predictive for any combination of a divalent cation and rocksalt host lattice.     

Theoretical study of the transition metal ring functionalized tips of open-ended (5,5) boron nitride nanotube (BNNT)

The nanotube with open edges is an excellent candidate for designing efficient tip for atomistic scanning probes or field emission display (FED) devices. In the present work, we have studied the functionalization of an open-ended boron nitride nanotube (BNNT) with a series of transition metal rings and the effects on the properties of open-ended BNNT through density functional theory (DFT) calculations. The results show that the TM-BNNT complexes are energetically favorable. Moreover, it is found that the functionalization (a) significantly decreases the band gap of BNNT to different degrees, which might effectively modify the electronic properties of the open-ended BNNT; and (b) efficiently lowers the work function, which might improve the field emission properties. Our results might be helpful not only to design specific BNNT-based tips but also to further discuss the chemical vapor deposition (CVD) growth of BNNT on nanoparticles.     

Influence of elastic properties on superplasticity in doped yttria-stabilized zirconia

We report the first principles calculations of elastic and electronic properties of yttria-stabilized tetragonal zirconium dioxide (YZP) doped with GeO₂, TiO₂ and SiO₂. Electronic structure and isotropic elastic properties of YZP do not change upon addition of dopants. Addition of dopants affects the shear C₆₆ elastic constant that decreases with the increasing dopant concentration. A simple model that connects elastic softening to enhancement of superplasticity in doped fine-grained zirconia ceramics is proposed.     

Theoretical investigation on the oligothienoacenes under the influence of external electric field

Theoretical investigation on a series of oligothienoacenes has been carried out at the B3LYP/6-31G* level by considering the influence of the external electric field. With the electric field increasing, the carbon-carbon single bonds become shorter and the carbon-carbon double bonds become longer, resulting in a better conjugation. Due to the different electron density, the charge mobility of the sulfur is more obvious than that of the carbon. The highest occupied molecular orbital (HOMO)-lowest unoccupied molecular orbital (LUMO) gap decreases with the EF intensity increasing. The applied EF also changes the spatial distribution of the molecular orbits: LUMO and several higher orbitals shift to the high potential side, whereas HOMO and several lower ones shift to the low potential side. All these features behave more pronounced with increasing conjugated chain length.     

Reformulation of density functional theory for N-representable densities and the resolution of the v-representability problem

Density functional theory for the case of general, N-representable densities is reformulated in terms of density functional derivatives of expectation values of operators evaluated with wave functions leading to a density, making no reference to the concept of potential. The developments provide proof of existence of a mathematical procedure that determines whether a density is v-representable and in the case of an affirmative answer determines the potential (within an additive constant) as a derivative with respect to the density of a constrained search functional. It also establishes the existence of an energy functional of the density that, for v-representable densities, assumes its minimum value at the density describing the ground state of an interacting many-particle system. The theorems of Hohenberg and Kohn emerge as special cases of the formalism. Numerical results for one-dimensional non-interacting systems illustrate the formalism. Some direct formal and practical implications of the present reformulation of DFT are also discussed.     

On site coulomb repulsion dominates over the non-local Hartree-Fock exchange in determining the band gap of polymers

The present study deals with the relative performance of the various density functional approaches in evaluating the band gap of polymer materials. Several density functional approximations that includes pure generalized gradient approximated (GGA) functional, meta-GGA, hybrid and range separated hybrid functionals have been used to evaluate the electrical band gap or transport gap of the studied polymers and compared with that obtained using Hubbard U corrected GGA functional (GGA+U). It has been observed that the experimental band gap of the polymers studied is satisfactorily reproducible when GGA+U approach is adopted. The band gap analyses further suggest that range separated hybrid functional, CAM-B3LYP, largely overestimates the band gap of all the polymers studied while the performance of hybrid B3LYP functional and other range separated hybrid functional like HSE is moderate. Better performance of the GGA+U method clearly indicates that short range coulomb correlation plays more significant role over the non-local Hartree-Fock (HF) exchange in determining the electrical band gap of polymer materials. It is also noticeable that the Hubbard U parameter used for the various polymers under consideration is relatively large, indicating the semi-empirical nature of the GGA+U level of calculations. The present finding will help us design new low band gap polymer through estimating band gap by the GGA+U method and this could be very useful for solar cell research.     

Topological analysis of real space properties for the solid-state full-potential APW DFT method

For the solid-state density functional program Elk a module was developed that enables to interface the crystal orbitals data into the DGrid package. Within DGrid the real-space electronic properties, like the electron density and its gradient or Laplacian, kinetic energy density, electron localizability indicator, etc., are computed. The properties can be searched for critical points as well as for the interconnection lines between them. Additionally, the basins can be evaluated and the property integrals can be calculated. The results of topological analysis for fcc Al, MgB₂, CaTiO₃, and urea molecular crystal are discussed and compared with the experimental data. The role of certain computation parameters of (L)APW method is also analyzed.     

Electron correlation effects on Compton profiles of copper in the GW approximation

The Compton profiles (CPs) of copper are calculated by the GW approximation with FLAPW basis sets on the LDA. In the quasiparticle band structure in the GW approximation, the width of fully occupied 3d valence band which is overestimated in the LDA, is in good agreement with experimental observation. The dynamical screening effects are important for band width narrowing. The occupation number densities are evaluated from the spectral function calculation within the GW calculations. The CPs obtained using these GW calculations successfully reproduce experimental results.     

Analysis of electronic structures of 3d transition metal-doped TiO2 based on band calculations

The electronic structures of titanium dioxide (TiO₂) doped with 3d transition metals (V, Cr, Mn, Fe, Co and Ni) have been analyzed by ab initio band calculations based on the density functional theory with the full-potential linearized-augmented-plane-wave method. When TiO₂ is doped with V, Cr, Mn, Fe, or Co, an electron occupied level occurs and the electrons are localized around each dopant. As the atomic number of the dopant increases the localized level shifts to lower energy. The energy of the localized level due to Co is sufficiently low to lie at the top of the valence band while the other metals produce midgap states. In contrast, the electrons from the Ni dopant are somewhat delocalized, thus significantly contributing to the formation of the valence band with the O p and Ti 3d electrons. Based on a comparison with the absorption and photoconductivity data previously reported, we show that the t_2g state of the dopant plays a significant role in the photoresponse of TiO₂ under visible light irradiation.     

First-principles study on electronic structure of Sr2Bi2O5 crystal

The electronic structure of Sr₂Bi₂O₅ is calculated by the GGA approach. Both of the valence band maximum and the conduction band minimum are located at Γ-point. This means that Sr₂Bi₂O₅ is a direct band-gap material. The wide energy-band dispersions near the valence band maximum and the conduction band minimum predict that holes and electrons generated by band gap excitation have a high mobility. The conduction band is composed of Bi 6p, Sr 4d and O 2p energy states. On the other hand, the valence band can be divided into two energy regions ranging from −9.5 to −7.9 eV (lower valence band) and from −4.13 to 0 eV (upper valence band). The former mainly consists of Bi 6s states hybridizing with O 2s and O 2p states, and the latter is mainly constructed from O 2p states strongly interacting with Bi 6s and Bi 6p states.     

First-principles energy band calculation for undoped and N-doped InTaO4 with layered wolframite-type structure

The electronic structures of undoped and N-doped InTaO₄ with optimized structures are calculated within the framework of the density functional theory. Calculated lattice constants are in excellent agreement with experimental values, within a difference of 2%. The valence band maximum (VBM) is located near the middle point on the ZD line and the conduction band minimum (CBM) near the middle point on the DX line. This means that InTaO₄ is an indirect-gap material and a minimum theoretical gap between VBM and CBM is ca. 3.7 eV. The valence band in the range from −6.0 to 0 eV mainly consists of O 2p orbitals, where In 4d5s5p and Ta 5d orbitals are slightly hybridized with O 2p orbitals. On the other hand, the conduction band below 5.5 eV is mainly composed of the Ta 5d orbitals and the contributions of In and O orbitals are small. The band gap of N-doped InTaO₄ decreases by 0.3 eV than that of undoped InTaO₄, because new gap states originating from N 2p orbitals appear near the top of the valence band. This result indicates that doping of N atoms into metal oxides is a useful method to develop photocatalysts sensitive to visible light.     

First-principles energy band calculation for undoped and S-doped TiO2 with anatase structure

The electronic structure of S-doped TiO₂ with an optimized anatase structure was calculated within the framework of the density functional theory (DFT). For the calculation we built four kinds of supercells; type-A and B supercells consist of 12 and 48 atoms and a centered Ti atom is substituted for an S atom, while type-C and D supercells consist of 12 and 48 atoms and a centered O atom is substituted for an S atom. The supercells (type-B and D) were employed to adjust the S-concentration in TiO₂ to an experimental value of a few %. The changes of the lattice parameters are not significant in the type-A and B supercells. The phase transition from the tetragonal to the orthorhombic occurs in the type-C and D supercells. In the small supercell (type-A), S-related states are located in the range of −1.6 to 0 eV, and the S-states are band-like. In contrast, in the large supercell (type-B), S-related states appeared at about 0.9 eV above the top of the valence band, and the S-states are atomic-like. The localization of the S-related states is remarkable in the type-B supercell. In the type-D supercell, the S-related states were merged with the top of the valence band, and as a result the band-gap energy is narrowed by 0.7 eV. Despite a low S-concentration (3%) in the type-D supercell, the S-related states are somewhat band-like.     

The effects of O deficiency on the electronic structure of rutile TiO2

Ab initio density functional calculations (plane wave GGA, CASTEP) were performed to determine the effect of O deficiency on the electronic structure of rutile, TiO₂. O deficiency was introduced through either the removal of O or the insertion of interstitial Ti atoms. At physically realistic concentrations of O vacancies in the rutile lattice (i.e. 25% and less) O deficiency results in the population of the bottom of the conduction band, the location of the Ti 3d orbitals in the pure structure, increasingly with increasing vacancy concentration. We propose that this could be confused with the formation and population of gap states especially where O vacancies occur in isolated positions in the lattice. In contrast, Ti interstitials introduce a defect state into the energy gap, without an overall reduction in the size of the energy gap. O vacancies result in a spin polarized solution, whereas Ti interstitials do not.     

Extracting d-orbital occupancy from magnetic Compton scattering in bilayer manganites

We consider the shape of the magnetic Compton profile (MCP), J_mag(p_z), in La_1.2Sr_1.8Mn₂O₇ for momentum transfer p_z along the [110] direction and the associated reciprocal form factor B(r) defined by taking the one-dimensional Fourier transform of J_mag(p_z). B(r) is shown to contain a prominent dip at r≈1 Å, where the minimum value B_min of B(r) can be related to the occupancies of the e_g orbitals of dx²−y² and d3z²−r² symmetry in the system. We illustrate our procedure in detail by analyzing the measured MCP at 5 K and the MCP computed within the framework of the local spin density approximation (LSDA) and comment on the differences between the measured and computed e_g occupancies as a reflection of the limitations of the LSDA in treating electron correlation effects.     

The influence of oxygen vacancies on the electronic and magnetic properties of perovskite-like SrFeO3-x

The electronic, magnetic properties and lattice relaxations of oxygen-deficient cubic strontium ferrite, SrFeO_2.875, in ferromagnetic configuration are studied by means of the density functional theory using LCAO basis (SIESTA code) calculations. It is shown that Fe and Sr atoms are displaced from oxygen vacancies while oxygen anions are attracted to the vacancies. The DOS distributions, magnetic moments and atomic effective charges are analyzed in comparison with vacancy free SrFeO₃; these parameters are found to change weakly with appearance of oxygen vacancies, in contrast to conventional ionic picture. Some strengthening of Fe-O covalent bonds in the vicinity of the oxygen vacancy is found. The formation energy of oxygen vacancies and divacancies are evaluated.     

Half-metallic ferromagnetism in (C, Si, Ge, Sn and Pb)-doped I2-VI compounds: An ab initio study

First-principles calculations were performed to investigate the stability, electronic structure and magnetism in Group IV elements-doped alkali-metal oxides (M₂O) [M: Li, Na, K, Rb] in antifluorite structure using the linear muffin-tin orbital method in its tight-binding representation (TB-LMTO). The calculations reveal that non-magnetic dopants can induce stable half-metallic ferromagnetic ground state in I₂-VI compounds. Total energy calculations show that the ferromagnetic state is energetically more stable than the non-magnetic state at equilibrium volume. Ground state properties such as equilibrium lattice constant and bulk modulus were calculated. The magnetic moment is found to be 2.00 μ_B per dopant atom.