通过形变势弱耦合表面极化子的性质

采用Huybrechts线性组合算符和幺正变换法,导出了晶体中电子与表面光学声子和表面声学声子均为弱耦合极化子的有效哈密顿量,并对两种极限情况进行了讨论。     

Electron–phonon-induced spin relaxation in InAs quantum dots

We have calculated spin-relaxation rates in parabolic quantum dots due to the phonon modulation of the spin–orbit interaction in the presence of an external magnetic field. Both deformation potential and piezoelectric electron–phonon coupling mechanisms are included within the Pavlov–Firsov spin–phonon Hamiltonian. Our results have demonstrated that, in narrow gap materials, the electron–phonon deformation potential and piezoelectric coupling give comparable contributions to spin-relaxation processes. For large dots, the deformation potential interaction becomes dominant. This behavior is not observed in wide or intermediate gap semiconductors, where the piezoelectric coupling, in general, governs the spin-relaxation processes. We have also demonstrated that spin-relaxation rates are particularly sensitive to the Landé g-factor.     

Discontinuity of the surface polaron

Using the Feynman's path integral method, energies and masses are calculated for various types of a surface polaron. It is shown that, when the electron-surface phonon interaction becomes strong, surface optical phonon yields continuous change from free to self-trapped states. On the other hand surface acoustic phonon yields discontinuous change for the deformation type interaction and continuous change for the piezoelectric interaction. All these results reflect the character of the force range of the electron-surface phonon interaction.     

Contribution of the electron-phonon interaction to the broadening of cyclotron resonance line of a two-dimensional electron gas in multiple quantum well structures

Summary The theory of cyclotron resonance (CR) lineshape of a two-dimensional electron gas (2 DEG) due to the electron-phonon interaction in multiple-quantum-well structures (MQWS) is investigated. The contribution of the deformation potential acoustic and piezoelectric phonon scattering to the broadening of the cyclotron resonance spectra (CRSB) of such a system is calculated fro GaAs/AlAs. The piezoelectric phonon scattering contribution to the linewidth is smaller as compared to the deformation potential acoustic phonon scattering but is significantly comparable. The magnetic-field dependence of CRSB due to the deformation potential acoustic and piezoelectric phonons isB ^1/2 andB ^1/4, respectively, and the frequency shift Δ _N,p =0 for both interactions in the elastic-scattering approximation. Observed numerical values of the CRSB indicate that at low temperatures acoustic and piezoelectric phonons are dominant scatterers and interact strongly with 2 DEG in MQWS where the impurity scattering is suppressed due to the modulation doping. To speed up publication, the author of this paper has agreed to not receive the proofs for correction.     

Raman study of SrF2 under uniaxial stress

The first-order Raman scattering in SrF₂ is studied at room temperature in the presence of a uniaxial stress. The phonon deformation potentials for the long-wavelength Raman-active optical phonon are determined and compared to those of other materials with the fluorite structure.     

Longitudinal optical phonon-plasmon coupling in luminescent 3C-SiC nanocrystal films

Glycerol-passivated 3C-SiC nanocrystal (NC) solid films with tunable blue photoluminescence show abnormal longitudinal optical (LO) phonon behavior. As the NC size increases, the LO phonon intensity increases in the Raman spectra of the solid films and is even larger than that of the transverse optical mode. The Raman spectra cannot be fitted by using only the phonon confinement model. When further considering the coupling between the LO phonon and plasmon induced by the surface deformation potential in the glycerol layer, good agreement is achieved between the experiments and theory. This indicates that the coupled LO phonon-plasmon effect arising from the surface bonding structure plays a crucial role in the modified LO phonon behavior.     

A study of the structure and scattering mechanisms of subterahertz phonons in lithium fluoride single crystals and optical ceramics

The methods of optical, electron, and atomic force microscopy (AFM) are applied to the study of the real structure of optical lithium fluoride ceramic obtained by hot deformation of single crystals. A comparative analysis is carried out of the scattering mechanisms of weakly nonequilibrium thermal phonons at liquid helium temperatures in LiF single crystals and ceramics. It is demonstrated that the phonon scattering in the original single crystals is determined by the forced vibrations of dislocations in the stress field of an elastic plane wave (a phonon), i.e., by the flutter mechanism. As the degree of deformation of the original material increases, the ceramics exhibit a change in the plastic deformation mechanisms, which leads to a decrease in the average size of grains and to an ordered structure. In this case, the dominant scattering is that by intergrain boundaries. The thickness and the acoustic impedance of these boundaries are evaluated.     

First-principles study of the mechanisms of the pressure-induced dielectric anomalies in ferroelectric perovskites

The pressure-induced giant dielectric anomaly at 0 K of ABO₃ perovskites is investigated at the Hartree-Fock, density-functional theory and hybrid levels. Its mechanism is analyzed in terms of thermodynamic phase stability, structural and phonon contributions and Born effective charges. It is shown that the IR-active soft phonon is responsible for the anomaly. This mode always involves a displacement and a deformation of the oxygen octahedra, while the roles of A and B ions vary among the materials and between high- and low-pressure phase transitions. A sharp increase in the phonon amplitude near the phase transition gives rise to the dielectric anomaly. The use of hybrid functionals is required for agreement with experimental data. The calculations show that the dielectric anomaly in the pressure-induced phase transitions of these perovskites is a property of the bulk material.     

Effects of dislocations on small signal high frequency hot electron mobility in n-GaN at low and high temperatures under high magnetic fields including hot phonon effect

The small signal high-frequency ac mobility of hot electrons in n-GaN in the extreme quantum limit at low- and high-temperatures has been calculated considering the non-equilibrium phonon distribution as well as the thermal phonon distributions. The energy loss rate has been calculated considering the dominance of the piezo electric coupling scattering and the polar optical phonon scattering while the momentum loss rate has been calculated considering the acoustic phonon scattering via deformation potential and the piezo electric coupling and the dislocation scattering.     

Phonon images of crystals

Using the pair of coupled Boltzmann kinetic equations for 2D electron gas and bulk acoustic phonons we derive the explicit formula for the phonon drag voltage induced by a pulsed phonon beam. A point source producing very short bursts of monoenergetic phonons is considered. The time integrated signal of the phonon drag voltage is calculated numerically for 2D electron gas lying in a {001} plane. For the raster scanned source of phonons the pattern of induced voltage is obtained and compared to the suitable experimental pattern and to the calculated quasimomentum focusing image. For several phonon propagation directions the dependency of induced voltage on the phonon energy is studied and compared with the experimental results. The ratio of the strength of piezo-electric coupling to the deformation potential constant and the localization length of 2D electrons are fitted.     

Temperature dependence of elastic constants in δ-Pu

It is shown that the variation of the bulk and shear moduli in δ-Pu in a temperature range of 300–500 K is due to the phonon redistribution between different vibrational modes caused by the dispersion of the Grüneisen coefficients (phonon viscosity). The constants of interaction of the high-frequency acoustic modes with a long-wavelength deformation induced by an ultrasonic wave are estimated.     

极性晶体中与形变势相互作用的表面极化子

有不少的极性晶体,电子与表面光学(SO)声子耦合强,但与表面声学(SA)声子耦合弱.研究电子与SO声子耦合强,与SA声子耦合弱的极性晶体中与形变势相互作用的表面极化子的性质.采用改进了的线性组合算符和微扰法导出了极性晶体中与形变势相互作用的表面极化子的有效哈密顿量.在计及电子在反冲效应中发射和吸收不同波矢的声子之间的相互作用时,讨论对表面极化子的有效哈密顿量、有效质量和有效相互作用势的影响.     

TiC lattice dynamics from ab initio calculations

Ab initio calculations and a direct method have been applied to derive the phonon dispersion curves and phonon density of states for the TiC crystal. The results are compared and found to be in a good agreement with the experimental neutron scattering data. The force constants have been determined from the Hellmann-Feynman forces induced by atomic displacements in a supercell. The calculated phonon density of states suggests that vibrations of Ti atoms form acoustic branches, whereas the motion of C atoms is confined to optic branches. The elastic constants have been found using the deformation method and compared with the results obtained from acoustic phonon slopes. Received 23 February 1998     

On the stability of ferromagnetism in intermediate valence systems

It is known that the deformations of the electronic charge density induced by lattice displacements play an important role in lattice dynamics. The multipole expansion of these deformations around the positions of both the cation and the anion leads to a rather general type of deformable shell model. This cluster deformation model can be applied not only to ionic crystals but also to a large variety of other materials like mixed-valence compounds. Taking TiN as an example, it is shown that the model is able to describe the very pronounced phonon anomalies in superconducting transitionmetal compounds and to reproduce the measured phonon dispersion curves within the experimental errors.     

Effects of Screening and Finite Phonon Energy on the Transport in Quantized Layers in Compound Semiconductors

Analytical expressions for the momentum relaxation times of the conduction electrons in a non-degenerate two dimensional electron gas in the surface of a compound semiconductor have been obtained for interactions with the piezoelectric and deformation potential acoustic phonons taking due account of the screening of the perturbing potential under the the condition of low lattice temperature when the phonon energy cannot be neglected in comparison to the average thermal energy of the electrons and for that matter the equipartition approximation for the phonon distribution is hardly valid. The relaxation times calculated for inversion layers in GaAs and ZnO are found to depend upon the carrier energy, the lattice temperature and the impurity concentration in rather complex manners which are significantly different from what follows from the traditional approach of either neglecting the phonon energy or disregarding the process of screening. It is seen how the finite value of the phonon energy and the screening of the perturbing potential change the mobility characteristics significantly at the low lattice temperatures. The temperature dependence of the zero field mobility that one obtains using the relaxation times calculated here is quite different from the traditional laws.     

Laser-induced conductivity of semiconductors at low temperatures

We consider the negative conductivity of electrons in semiconductors excited by a picosecond laser pulse at low temperatures, due to the inelastic electron-phonon collisions. For the first time, the dependence of the deformation potential on the phonon wave number is taken into account. This dependence significantly changes the region of negative electron conductivity as a function of the phonon temperature. The text was submitted by the authors in English.     

Phonon dispersion in aluminium arsenide and antimonide

The phonon dispersion curves for aluminium arsenide and antimonide have been investigated by using a deformation bond approximation model. The results obtained from this model are compared with the experimental values wherever it is available. Since there is no complete experimental phonon dispersion curves for AlAs, we could not compare our calculated results, but the results of AlSb have been compared with the inelastic neutron scattering measurements at 15 K. However, we compare the phonon frequencies of AlAs and AlSb at critical points of the Brillouin zone obtained by our calculations and Raman spectroscopy measurements. This model predicts the phonon modes satisfactorily in all the symmetry directions of the Brillouin zone (BZ). The spectrum has similar features as observed in other III–V compound semiconductors.     

Two phonon density of states of partially disordered crystal NH4I

Two phonon density of states of NH₄ have been computed with the help of deformation dipole model at room temperature. The results have been compared with the available experimental Raman Spectrum and peak position. It has been shown that in addition to single phonon process which is dominant, the two-phonon density of states also contribute to the Raman Intensity in a partially disordered crystal.     

磁场中与形变势相互作用的表面极化子的有效质量

近年来 ,磁场中极性晶体表面极化子的性质已引起人们的广泛关注。Ｌａｒｓｅｎ[1 ] 采用四级微扰法计算了磁场中二维极化子的基态能量。Ｗｅｉ等[2 ] 用格林函数方法研究了交界面磁极化子的回旋共振质量和频率。本文作者之一[3] 用线性组合算符讨论了磁场中表面极化子的性质。实际上 ,到目前为止 ,对表面磁极化子的研究 ,只限于考虑表面电子只与表面光学 (ＳＯ)声子和体纵光学 (ＬＯ)声子相互作用 ,而忽略了表面电子与表面声学 (ＳＡ)声子相互作用。对电子通过形变势与晶格声学振动相互作用形成的准粒子 声学形变势 (ＡＤＰ)极化子性质的研…