Characterization of solution-synthesized CdTe and HgTe

We report the characterization of solution-synthesized CdTe and HgTe nanocrystals by X-ray diffraction, transmission electron microscopy, and photoluminescence. Methanol solutions of sodium telluride and cadmium iodide or mercury iodide, respectively, are reacted to precipitate the nanocrystalline metal tellurides, while the sodium iodide byproduct remains in solution. The existence of crystalline CdTe, HgTe, and ternary HgCdTe compounds has been demonstrated by powder X-ray diffraction after a post-synthesis sintering process. Precipitated crystallites from this synthesis were analyzed by transmission electron microscopy, which revealed that crystal diameters can vary from approximately 1 nm to 100 nm and that crystals are stoichiometric within the detection limit of the electron microprobe technique. Narrow size ranges can be selected and investigated due to an in-situ separation process in the electron microscope. Photoluminescence is found at energies above the bulk exciton energy for CdTe and is attributed to near-band-gap recombination which is blue-shifted due to quantum confinement. Both low defect luminescence and dark field imaging suggest a high crystalline quality. A comparative characterization by photoluminescence, transmission electron microscopy, and X-ray diffraction evaluates the effects of heat treatments during and after synthesis.     

Self consistent band structure of ordered ScPd3 and YPd3

A fully self-consistent electronic structure of the two ordered compounds ScPd₃ and YPd₃ is obtained by linearized muffin-tin orbitals (LMTO) method. The overall agreement with other theoretical results concerning isostructural compounds and with electronic specific heat measurements is good.     

Helical quantum states in HgTe quantum dots with inverted band structures

We investigate theoretically the electron states in HgTe quantum dots (QDs) with inverted band structures. In sharp contrast to conventional semiconductor quantum dots, the quantum states in the gap of the HgTe QD are fully spin-polarized and show ringlike density distributions near the boundary of the QD and spin-angular momentum locking. The persistent charge currents and magnetic moments, i.e., the Aharonov-Bohm effect, can be observed in such a QD structure. This feature offers us a practical way to detect these exotic ringlike edge states by using the SQUID technique.     

d-core transitions in ZnTe,CdTe and HgTe

Summary We have measured the reflectivity spectra of monocrystalline ZnTe, CdTe and HgTe between 5 and 35 eV. We have interpreted the sharp structures above approximately 10 eV as transitions originating in the metal uppermostd levels. The structures give a picture of the projected densities of states of the conduction bands and supply a better understanding of their states.

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Riassunto Abbiamo misurato gli spettri di riflettività di monocristalli di ZnTe, CdTe ed HgTe tra 5 e 35 eV. Oltre i 10 eV gli spettri presentano delle strutture fini, interpretate come transizioni che hanno origine nei livellid piú alti del catione. Questa interpretazione permette di ricavare una rappresentazione schematica della densità proiettata degli stati di conduzione e di ottenere una migliore comprensione sulla natura degli stati finali stessi.

     

Optoelectronic characteristics of CdTe/HgTe/CdTe quantum-dot quantum-well nanoparticles

Optoelectronic characteristics of CdTe/HgTe/CdTe quantum-dot quantum-well (QDQW) nanoparticles synthesized by the colloidal method are investigated in this study. Strong exciton bands were observed in absorption and photoluminescence (PL) spectra taken for the CdTe/HgTe/CdTe QDQW nanoparticles. The energy difference between the exciton absorption and PL bands is larger than those obtained with CdTe and HgTe nanoparticles. Photocurrent-voltage curves and time-dependent photocurrent curves were obtained for the CdTe/HgTe/CdTe QDQW nanoparticles. With regard to the photocurrent mechanism of these QDQW nanoparticles, those charge carriers participating in the formation of excitons may not contribute to the photocurrent, because of the large binding energy of the excitons. Moreover, it is suggested in this paper that free holes in the HgTe quantum-well in the valance band, rather than free electrons, are the main contributors to the photocurrent.     

HgTe/CdTe superlattices grown by molecular beam epitaxy

In this paper we present results concerning the optical absorption in HgTe-CdTe superlattices. We confirm the narrowing of the superlattice band-gap (the increase of cut-off wavelength, λ_c) compared to the band gap of the equivalent Hg_1?xCd_xTe alloy. We show also, as predicted by the theory, an increase of the cut-off wavelength of the superlattice when the HgTe layer thickness increases. At 300K, the agreement between theory and experiment is fairly good if we consider the onset of the absorption. The λ_c tail shifting towards shorter wavelengths could be explained by the interdiffusion between HgTe and CdTe layers. At 30K, no important change in the I.R. absorption is noticed for all the superlattices.We present for the first time a superlattice exhibiting an absorption in the 8–12 μm window.We have carried out Hall measurements on several superlattices and present for the first time transport properties on these alternate microstructures. The most important features concern the unexpected and not yet understood very high hole mobilities at 10K.     

Time-dependent electron transport in HgTe/CdTe quantum wells

Based on the Floquet theory and Keldysh's nonequilibrium Green's function methods, we study the electron transport through the HgTe/CdTe quantum wells (QWs) irradiated by a monochromatic laser field. We find that when the laser field is applied, the edge states are split into a series of sidebands. When the Fermi level lies among these sidebands, the quantized plateau of the conductance is destroyed. Instead, the conductance versus the radiation frequency exhibits the successive oscillation peaks corresponding to the resonant tunneling through the sidebands of the edge states. The resonant interaction between the quasiparticles and the radiation field opens the gaps in the crossing region of the sidebands, which can be tuned by the radiation strength and frequency. This leads to the shift of the oscillation peaks in the conductance. We also show that the amplitudes of the oscillation peaks in the conductance are governed by the radiation strength and frequency.     

CdTe和HgTe电子结构的紧束缚模型计算

基于局域密度近似(LDA或GGA)的密度泛函理论计算往往低估体系的禁带宽度,而这一低估对窄带隙半导体尤为严重.尽管基于混合泛函的密度泛函理论能有效地修正这一误差,但是由于计算量较大仍无法用于计算较大体系.本文发展了一组能够比较准确描述CdTe和HgTe晶体电子结构的紧束缚参数.将基于混合泛函的密度泛函计算结果作为输入,我们构建了正交的sp~3s~*基组下的紧束缚模型.此模型能够比较准确地描述能带结构在费米面附近4 eV范围内的色散关系.利用当前模型计算了CdTe和HgTe非晶的电子态密度,计算结果与他人的理论计算和实验值符合较好.     

Self consistent code for a 150 GHz gyrotron

A self consistent calculation for gyrotron oscillators is described and applied to a TE₀₃ mode gyromonotron. The RF field profile satisfies a wave equation in which the AC beam current appears as a source. The wave equation is solved simultaneously with the electron equation of motion.     

Incorporation of hydrogen in CdTe and HgTe epitaxial layers grown by MOCVD

The incorporation of hydrogen into MOCVD-grown layers of CdTe, HgTe and CdHgTe using H₂ as the vector gas has been studied. Concentrations of incorporated H going from 6.5 × 10¹⁷ cm^-3 to 5 × 10¹⁸ cm^-3 have been found by SIMS in CdTe layers. This concentration decreases with increasing growth temperature and decreasing bond strength of the host material.     

Electron tunneling through double-electric barriers on HgTe/CdTe heterostructure interface

We investigate theoretically the carrier transport in a two-dimensional topological insulator of (001) HgTe/CdTe quantum-well heterostructure with inverted band, and find distinct switchable features of the transmission spectra in the topological edge states by designing the double-electric modulation potentials. The transmission spectra exhibit the significant Fabry-Pérot resonances for the double-electric transport system. Furthermore, the transmission properties show rich behaviors when the Fermi energy lies in the different locations in the energy spectrum and the double-electric barrier regions. The opacity and transparency of the double-modulated barrier regions can be controlled by tuning the modulated potentials, Fermi energy and the length of modulated regions. This electrical switching behavior can be realized by tuning the voltages applied on the metal gates. The Fabry-Pérot resonances leads to oscillations in the transmission which can be observed in experimentally. This electric modulated-mechanism provides us a realistic way to switch the transmission in edge states which can be constructed in low-power information processing devices.     

Study of DOS and energy band structures in beryllium chalcogenides

The electronic properties of beryllium chalcogenides namely, BeS, BeSe and BeTe have been investigated theoretically using the full potential-linearized augmented plane wave (FP-LAPW) method within density functional theory (DFT). The exchange correlation effects have been treated in the generalized gradient approximation (GGA). The results so obtained were compared with the experimental and the theoretical results. The energy-volume relations for these compounds have been calculated to obtain the equilibrium lattice parameters. The results of density of states (DOS) shows an indirect band gap in BeS and BeSe with no band gap for BeTe.     

Self consistent screening in concentrated alloys

In this paper, we discuss how to introduce self consistent values for the local energy levels and hopping integrals in the basic tight binding Hamiltonian for concentrated alloys. We then generalize the usual CPA approximation for this Hamiltonian to take into account the self consistent values.     

利用透射系数研究周期势的能带结构

利用一维方位势透射系数的递推公式研究了周期势的能带结构,文中考察了能 结构与垒宽、阱宽及位势个数的关系。     

Resonant tunneling,eigenvalue and energy band calculation for potential and periodic potential structures

Recursion formulae for the reflection and the transmission probability amplitudes and the eigenvalue equation for multistep potential structures are derived. Using the recursion relations, a dispersion equation for periodic potential structures is presented. Some numerical results for the transmission probability of a double barrier structure with scattering centers, the lifetime of the quasi-bound state in a single quantum well with an applied field, and the miniband of a periodic potential structure are presented.