On the order of the herringbone transition of N2 on graphite: a Monte Carlo study

Using the anisotropic planar-rotor model we investigate the herringbone phase transition of N₂ in the (√3 × √3)R30° commensurate phase on graphite by large scale Monte Carlo simulations. The effective correlation length ξ is measured near the transition temperature T₀. The data, extrapolated to T₀, yield a large but finite ξ at T₀ demonstrating that the herringb ordering is a weak first order transition.     

Leed,aes and photoemission measurements of epitaxially grown GaAs(001), (111)A and (1̄1̄1̄)B surfaces and their behaviour upon cs adsorption

Epitaxially grown GaAs(001), (111) and (1?1?1?) surfaces and their behaviour on Cs adsorption are studied by LEED, AES and photoemission. Upon heat treatment the clean GaAs(001) surface shows all the structures of the As-stabilized to the Ga-stabilized surface. By careful annealing it is also possible to obtain the As-stabilized surface from the Ga-stabilized surface, which must be due to the diffusion of As from the bulk to the surface. The As-stabilized surface can be recovered from the Ga-stabilized surface by treating the surface at 400°C in an AsH₃ atmosphere. The Cs coverage of all these surfaces is linear with the dosage and shows a sharp breakpoint at 5.3 × 10¹⁴ atoms cm^?2. The photoemission reaches a maximum precisely at the dosage of this break point for the GaAs(001) and GaAs(1?1?1?) surface, whereas for the GaAs(111) surface the maximum in the photoemission is reached at a higher dosage of 6.5 × 10¹⁴ atoms cm^?2. The maximum photoemission from all surfaces is in the order of 50μA Im^?1 for white light (T = 2850 K). LEED measurements show that Cs adsorbs as an amorphous layer on these surfaces at room temperature. Heat treatment of the Cs-activated GaAs (001) surface shows a stability region of 4.7 × 10¹⁴ atoms cm^?2 at 260dgC and one of 2.7 × 10¹⁴ atoms cm^?2 at 340°C without any ordering of the Cs atoms. Heat treatment of the Cs-activated GaAs(111) crystal shows a gradual desorption of Cs up to a coverage of 1 × 10¹⁴ atoms cm^?2, which is stable at 360°C and where LEED shows the formation of the GaAs(111) (√7 × √7)Cs structure. Heat treatment of the Cs-activated GaAs(1?1?1?) crystal shows a stability region at 260°C with a coverage of 3.8 × 10¹⁴ atoms cm^?2 with ordering of the Cs atoms in a GaAs(1?1?1?) (4 × 4)Cs structure and at 340°C a further stability region with a coverage of 1 × 10¹⁴ at cm^?2 with the formation of a GaAs(1?1?1?) (√21 × √21)Cs structure. Possible models of the GaAs(1?1?1?) (4 × 4)Cs, GaAs(1?1?1?)(√21 × √21)Cs and GaAs(111) (√7 × √7)Cs structures are given.     

Adsorbate band structure of bromine on Pd(111) studied by angle resolved ultraviolet photoemission

The photoemission spectra from Pd(111) and from the Pd(111)-Br(√3 × √3)R30° system are reported; some new features for the clean surface are detected and assigned. The principal effect of the Br overlayer on the direct transitions is a general intensity reduction. Three adsorbate derived features are detected; one at 4 eV with no dispersion is probably an adsorbate-induced feature of the metal, and the other two which disperse are assigned as Br 4p_x, (4.5 eV) and Br 4p_z (6 eV) at $\text{}\text{?}$gG.     

A leed-aes study of thin Pd films on Si(111) and (100) substrates

A system Pd (deposit)-Si (substrate) has been studied by LEED and AES. Pd₂Si formed on Si(111) became epitaxial after a short time of annealing at a temperature between 300 and 700°C, while the Pd₂Si formed on Si(100) did not, in both cases the surfaces of the Pd₂Si being covered with a very thin Si layer. A sequence of superstructures (3√3 × 3√3), (1 × 1), and (2√3 × 2√3) was observed successively in Pd/Si(111) as the annealing temperature was increased. A (√3 × √3) structure was obtained by sputtering the 3√3 surface slightly. It was found that the √3 structure corresponds to Pd²Si(0001)-(1 × 1) grown epitaxially on Si(111), and that the 3√3 structure comes from the thin Si layer accumulated over the silicide surface, while the 2√3 and 1 structures arise from a submonolayer of Pd adsorbed on Si(111). Superstructures observed on a Pd/Si(100) system are also studied.     

Fluorescence and absorption spectra of 9, 10-diazaphenanthrene solutions at 77°K

The S₁(n, √^*) ? S₀ fluorescence and absorption spectra of 9, 10-diazaphenanthrene solutions in hydrocarbons possess at 77°K a quasilinear structure (Shpolskii effect). In the frozen n-hexane matrix (c = 10^-4 M) the fluorescence spectrum displays a triplet structure (22 181, 22 169 and 22 149 cm^-1 for the O-O transition). The spectra of 9, 10-diazaphenanthrene solution are shifted towards the red compared with those of the single crystal (～ 900 cm^-1). A good agreement between the calculated and experimental values of this shift is obtained. A strong concentration effect on the structure of the spectra is discussed. A quasilinear structure is observed also in the second absorption band.     

The clean thermally induced W {001} (1 × 1) → (√2 × √2) R 45° surface structure transition and its crystallography

A (√2 × √2)R45° surface structure on W {001} produced only by cooling below ~370 K, first reported by Yonehara and Schmidt, has been investigated by LEED, AES, work function change, characteristic loss and low energy Auger fine structure measurements. No significant changes at any energy up to 520 eV occur in the standard Auger spectrum upon cooling to 220 K for as long as 30 min after a flash to >2 500 K. The work function of the (√2 × √2) R45° at 210 K is 20 ± 10 mV below that of the (1 × 1) surface, and a sensitive feature in the fine structure of the N₇VV AES transition shows approximately 60% attenuation. Unlike for H₂ adsorption, the “surface plasmon” loss peak exhibits little if any measurable attenuation and no measurable shift in energy as the crystal cools to form the (√2 × √2)R45°. The rate of intensity buildup in the $\text{1}\text{2}$-order LEED beams is strictly temperature dependent, and significant differences exist between the $\text{1}\text{2}$-order LEED spectra produced by cooling and those produced by H₂ adsorption. Only 2-fold symmetry was observed in the LEED beam intensities at exactly normal incidence, rather than 4-fold as expected for statistically equal numbers of rotationally equivalent domains. The LEED I-V spectra for 24 fractional order beams and 12 integral order beams, taken over large energy ranges at normal incidence, clearly establish that the beam intensities display 2 mm point group symmetry, and hence a preference of one domain orientation over the other. No beam broadening or splitting effects were apparent, implying only incoherent scattering from the various domains. The half-order beam spectra (±h/2, ±h/2) are identical in relative intensity to the (±h/2, ±h/2) spectra but different in absolute intensity by a constant factor, which can be explained only by domains with p2mg space group symmetry rather than just p2mm. Adsorption of H₂ onto the cooled (√2 × √2)R45° structure restores the 4-fold symmetry in the LEED beam intensities at normal incidence, giving a c(2 × 2) hydrogen structure, the same as when adsorbing H₂ onto the above room temperature (1 × 1) crystal. This strongly supports the observed p2mg symmetry as being a true property of the cooled (√2 × √2)R45° surface structure. These results show that the (1 × 1) → (√2 × √2) R45° transition produced by cooling is a transition involving displacement of surface W atoms, and that it apparently can be characterized as an order-order, second degree, homogeneous nucleation process, which is strongly prohibited by the presence of impurities or defects.     

Observation of occupation and dispersion of 2π1 associated states for CO adsorbed on Cu{100}

Angle-resolved photoemission observations of CO adsorbed on Cu{100} to form the (√2 × √2)R45° structure show emission from a CO 2π¹ related state away from the centre of the surface Brillouin zone. These observations are shown to be compatible with the anticipated dispersion of such states and with weak 2π¹ backbonding on this substrate.     

Interpretation of photoemission from Na (1 1 0)

A self-consistent calculation of the electronic structure of the Na (1 1 0) surface, using an embedding method to treat the semi-infinite system, gives a prominent surface resonance peak at 0.75 eV above the Fermi energy. The tail of this resonance extends below E_F at the surface, and it is suggested that surface photoemission from this tail is responsible for the peak in the photocurrent at E_F observed experimentally, A photoemission calculation, with a non-self-consistent surface potential, reproduces the enhancement of the peak as a direct transition moves through it.     

Orientational order in CO and N2 monolayers on graphite studied by X-ray diffraction

X-ray diffraction has been used to study the structure and orientational phase transitions of CO and N₂ adsorbed on graphite (Papyex). Both form orientationally ordered 2√3 × 2√3 R30° commensurate phases on graphite at low temperatures (10 K). The in-plane herringbone structure of N₂ has been confirmed but CO has more orientational disorder than N₂, which may be associated either with tilting, random static or systematic, of the molecules away from the surface and/or with orientational order of shorter range than the centre of mass order. In the first case the average tilt would have to be about 26° and in the second case the orientational correlation length would have to be 200 Å compared with 450 Å for the translational order. The orientational phase transition is sharp for N₂, occurring over the range 27–30 K, in agreement with previous work. For CO the transition is broad and starts at lower temperatures. This and the structural data indicate that a point quadrupolar interaction is not a suitable model for comparing the properties of N₂ and CO layers. The orientational phase transition in the incommensurate phase of N₂ is found to be broad and occurs below 20 K. For CO it is sharper than for the commensurate phase and occurs at a higher temperature. The lattice parameter changes by 0.75% across the orientational phase transition. For both N₂ and CO there is evidence of translational disorder in the commensurate phases but it cannot be interpreted quantitatively.     

RHEED study of In-induced superstructures on Ge(111) surfaces

When submonolayer and monolayer amounts of indium were deposited onto clean Ge(111) surfaces at room temperature and then heated, (13 × 2√3), (12 × 2√3), (11 × 2√3), (10 × 2√3), (4√3 × 4√3) R30°-related, (√31 × √31) R(±9°), (√61 × √61) R(30 ± 4°) and (4.3 × 4.3) structures appeared on the surfaces at fixed In coverages and at fixed surface temperatures. General intensity features of superlattice reflections are derived from intensity estimations by eye of superlattice spots in their RHEED patterns, and some structural characteristics of the superstructures are clarified from the analysis of the general intensity features. The former four superstructures are long-period (2 × 2)-related antiphase structures whose period changes, depending on the coverage. The wavevector characterizing the (13 × 2√3) structure, which appears at the smallest coverage, almost coincides with those of structural fluctuation emerging at the clean Ge(111) (1 × 1) surface around 350°C. The coincidence suggests that the longperiod (2 × 2)-related antiphase structures have a close relationship to the structural fluctuation and, besides, to the (2 × 8) structure in their origin.     

Structural, magnetic properties and photoemission study of Ni-doped ZnO

Nickel-doped ZnO (Zn_1−xNi_xO) have been produced using rf magnetron sputtering. X-ray diffraction measurements revealed that nickel atoms were successfully incorporated into ZnO host matrix without forming any detectable secondary phase. Ni 2p core-level photoemission spectroscopy confirmed this result and suggested Ni has a chemical valence of 2+. According to the magnetization measurements, no ferromagnetic but paramagnetic behavior was found for Zn_0.86Ni_0.14O. We studied the electronic structure of Zn_0.86Ni_0.14O by valence-band photoemission spectroscopy. The spectra demonstrate a structure at ∼2 eV below the Fermi energy E_F, which is of Ni 3d origin. No emission was found at E_F, suggesting the insulating nature of the film.     

Iodine adlayer structures on Au(111) as discerned by atomic-resolution scanning tunnelling microscopy: relation to iodide electrochemical adsorption

Coverage-dependent adlayer structures of iodine on Au(111) in air or organic solvents obtained by using a high-precision “beetle” — type scanning tunnelling microscope are reported in comparison with those obtained under potential control in aqueous electrochemical environments. The well-known (√3 × √3)R30° structure (Θ_I = 0.33) was only observed at the electrochemical interface at low potentials. Instead, two higher coverage adlattices are evident from the present STM images. The first comprises a (5 × √3) structure (Θ_I = 0.40), with a pair of iodine rows compressed by 20% in the R30° substrate direction. The second high-coverage phase (Θ_I ≈ 0.44) consists of a hexagonal iodine overlayer compressed and rotated a few degrees from the R30° direction, giving rise to a long-range (~ 20 Å) corrugation in the STM image. The virtues of quantitative atomic-resolution STM for deducing such complex adiayer structures are pointed out.     

Return of the volcano: PHENIX azimuthal correlations 62.4 GeV Au+Au

As in previous analyses at √s _NN =200 GeV., correlations in azimuthal angles between inclusive charge particles at intermediate transverse momentum (p _T=1.0?4.0) GeV are studied at √s _NN =62.4 GeV. The di-jet correlations reveal similar modification as in 200 GeV. Specifically large modification, including the “volcano” or “cone” structure, persists in the awayside correlation.     

Modification of the electronic structure and formation of an accumulation layer in ultrathin Ba/n-GaN and Ba/n-AlGaN interfaces

The electronic structure of the n-GaN(0001) and Al _x Ga_{1 ? x} N(0001) (x = 0.16, 0.42) surfaces and the Ba/n-GaN and Ba/AlGaN interfaces is subjected to in situ photoemission investigations in the submonolayer Ba coverage range. The photoemission spectra of the valence band and the spectra of the surface states and the core 3d level of Ga, the 2p level of Al, and the 4d and 5p levels of Ba are studied during synchrotron excitation in the photon energy range 50–400 eV. A spectrum of the surface states in Al _x Ga_{1 ? x} N (x = 0.16, 0.42) is found. The electronic structure of the surface and the near-surface region is found to undergo substantial changes during the formation of the Ba/n-GaN and Ba/AlGaN interfaces. The effect of narrowing the photoemission spectrum in the valence band region from 10 to 2 eV is detected, and surface eigenstates are suppressed. The Ba adsorption is found to induce the appearance of a new photoemission peak in the bandgap at the Fermi level in the Ba/n-GaN and Ba/n-Al_0.16Ga_0.84N interfaces. The nature of this peak is found to be related to the creation of an accumulation layer due to a change in the near-surface potential and enriching band bending. The energy parameters of the potential well of the accumulation layer are shown to be controlled by the Ba coverage.     

Effect of NH3 adsorption on the atomic structure of Si(111) √3 × √3 - Al and Si(111) √3 × √3 - Ag surfaces

The room temperature (RT) adsorption of ammonia (NH₃) on Si(111)√3 × √3-Al and Si(111)√3 × √3-Ag surfaces has been studied using LEED and AES. The transformation from Si(111)√3 × √3-Al surface structure to Si(111)1 × 1-(Al, H) upon NH₃ exposure has been found to be similar to the previously observed structural transformation induced by exposure in the atomic hydrogen. It has been demonstrated that the transformation is caused by hydrogen atoms which are generated by NH₃ dissociation on the Si(111)√3 × √3-Al surface. It has been estimated that about 0.1 ML of ammonia molecules is needed to complete the structural transformation. No interaction of NH₃ with the Si(111)√3 × √3-Ag surface has been found. The dissociation of NH₃ molecules is believed to be impossible on this surface     

RS model with a small curvature and dielectron production at the LHC

In the framework of the Randall-Sundrum-like scenario with the small curvature κ (RSSC model), p _⊥-distributions for the dielectron production at the LHC are calculated. For the summary statistics taken at 7 TeV (L = 5 fb^?1) and 8 TeV (L = 20 fb^?1), the exclusion limit on the 5-dimensional gravity scale M ₅ is found to be 6.35 TeV at 95% C.L. For √s = 13 TeV and integrated luminosity 30 fb^?1, the LHC search limit is estimated to be 8.95 TeV. These limits on M ₅ are independent of κ, provided the relation κ ? M ₅ is satisfied.     

Influence of the herringbone reconstruction on the surface electronic structure of Au(111)

We present angular-resolved photoemission investigations of the Shockley-type surface state on the reconstructed (111) surface of gold. The so-called herringbone reconstruction, with three different 22×3^1/2domain orientations, forms a super-lattice that has a clearly observable influence on the surface electronic structure. In the L gap of the projected bulk states, there appears a non-uniform photoemission intensity distribution due to the back-folding of the Shockley state at the Bragg planes of the reduced surface Brillouin zone. Furthermore, there is a clear indication of the existence of surface-state band gaps in the electronic density of states of the Shockley state. PACS 73.20.At; 68.35.Bs; 79.60.Bm     

Surface electronic structure of the organic superconductor κ-(ET)2Cu(NCS)2 studied via photoemission microscopy

The surface electronic structure of cleaved single crystals of the organic superconductor κ-(ET)₂Cu(NCS)₂ has been studied using photoemission microscopy. Two types of cleaved surfaces were observed, displaying different valence band photoemission spectra and different spectral behavior near the Fermi level, E_F. In particular, spectra from one surface type display relatively broad spectral features in the valence band and finite spectral intensity at E_F, while spectra from the other surface type show well-defined valence band emission features and zero photoemission intensity at E_F. We propose that the spectral differences are due to a very short electron mean free path in this material, and our results are used to explain the differences between previously published photoemission spectra from this superconductor. We also report the results of an investigation of the electronic structure of defects in this material.     

Large transverse momentum particle production in αα and pp collisions at the CERN ISR

The production of charged hadrons with high p_T in αα collisions at √s=126 GeV and pp collisions at √s=31 and 63 GeV is compared, and the structure of the events associated with the high-pT particles is studied. The probability of finding associated particles close to the trigger particle increases strongly between √s=31 and 63 GeV for pp collisions. For p_T>2.5GeV/c the αα/pp cross section ratio at the same energy per nucleon is measured to be 18.7 ± 2.0, to be compared with A² = 16, and a higher associated multiplicity is observed for αα.     

Surface chemistry of the metal-halogen interface: Bromine chemisorption and dibromide formation on palladium (111)

At 300 K and in the coverage regime ($\text{0<θ<}\text{1}\text{3}$) bromine chemisorbs rapidly on Pd(111); the sticking probability and dipole moment per adatom remain constant at 0.8 ± 0.2 and 1.2 D, respectively. This stage is marked by the appearance of a √3 structure: desorption occurs exclusively as atomic Br. At higher coverages, desorption of molecular Br₂ begins (desorption energy ～130 kJ mol^?1) as does the nucleation and growth of PdBr₂ on the surface. This latter stage is signalled by the appearance of a √2 LEED pattern and the observation of PdBr₂ as a desorption product (desorption energy ～37 kJ mol^?1). Some PdBr₂ is also lost by surface decomposition and subsequent evaporation of atomic Br. The data indicate that the transition state to Br adatom desorption is localised and that PdBr₂(a) ? Br(a) interconversion occurs; these surface species do not appear to be in thermodynamic equilibrium during the desorption process.