Fe掺杂氢化非晶碳薄膜制备及其热稳定性能

 以H₂、反式-2-丁烯（T₂B）和二茂铁混合气体为工作气体,用金属有机等离子体增强化学气相沉积法（PECVD）制备了Fe掺杂氢化非晶碳（a-C:H:Fe）薄膜。使用X射线光电子能谱（XPS）对a-C:H:Fe薄膜成分进行了分析。使用台阶仪、场发射扫描电镜（FESEM）、热重分析和紫外可见分光光度计（UV-VIS）,对比分析了a-C:H薄膜和a-C:H:Fe薄膜的沉积速率、表面形貌、热稳定性和光学带隙变化。研究表明：相同制备条件下,相比a-C:H薄膜,a-C:H:Fe薄膜的沉积速率高,表面颗粒小,容易碳化,光学带隙变窄。     

Fe掺杂氢化非晶碳薄膜制备及其热稳定性能

以H2、反式-2-丁烯（T2B）和二茂铁混合气体为工作气体,用金属有机等离子体增强化学气相沉积法（PECVD）制备了Fe掺杂氢化非晶碳（a-C:H:Fe）薄膜。使用X射线光电子能谱（XPS）对a-C:H:Fe薄膜成分进行了分析。使用台阶仪、场发射扫描电镜（FESEM）、热重分析和紫外可见分光光度计（UV-VIS）,对比分析了a-C:H薄膜和a-C:H:Fe薄膜的沉积速率、表面形貌、热稳定性和光学带隙变化。研究表明：相同制备条件下,相比a-C:H薄膜,a-C:H:Fe薄膜的沉积速率高,表面颗粒小,容易碳化,光学带隙变窄。     

Phonon thermal conductivity of amorphous selenium doped by germanium

The thermal conductivity of the amorphous semiconducting system Se-Ge in the temperature range of 100 to 300°K was measured. The Debye model was used for the analysis of the experimental values and the calculated mean free path of phonons was related to the size of the basic structure units of the selenium glass. The shift of the thermal conductivity of amorphous selenium doped with germanium was explained by means of the increase of the velocity of sound observed together with the occurrence of the covalent bond Se-Ge between the basic structure units of the studied amorphous system.     

Interaction of ultrasonic phonons with defects in hydrogenated amorphous germanium

The attenuation of acoustic surface waves of 300 MHz has been measured in sputtered films of amorphous Ge and a-GeH_x (0x0.25) at temperatures between 0.5 K and 475 K. A strong absorption maximum due to structural relaxation is found at 135 K in pure a-Ge. This absorption maximum is shifted by annealing and is suppressed by hydrogen incorporation. Below 20 K the attentuation varies linearly with temperatures in all films investigated so far.On leave from: Department of Physics, Maharshi Dayanand University, Rohtak, 124001, India     

Photoluminescence in hydrogenated amorphous germanium (a-Ge:H)

The photoluminescence of glow discharge deposited a-Ge:H is studied. The spectra exhibit a two-band structure with an intrinsic band centered at 0.65 eV and a defect induced band near 0.5 eV, which is enhanced by using less favorable deposition conditions (low substrate temperature) and by hydrogen effusion. Even in films of good quality the quantum efficiency is only about 1 % of that of good a-Si:H-films. It is suggested that the non-radiative recombination centers are Ge- dangling bonds and that the low efficiency as compared to a-Si:H-films of similar defect density is due to the larger localization length of the db-states which enhances radiationless tunneling processes.     

A new evaporation method for preparing hydrogenated amorphous silicon films

We describe a new evaporation method for preparing hydrogenated amorphous silicon films under different deposition conditions. The films obtained have characteristics comparable to those prepared by other conventional techniques. Infrared spectra and d.c.-electrical conductivity results are reported.     

氢化非晶硅薄膜的热导率研究

采用铂电极为加热电阻,研究了厚度为300—370nm等离子体化学气相沉积(PECVD)工艺制备的氢化非晶硅(a-Si：H)薄膜的热导率随衬底温度的变化规律.用光谱式椭偏仪拟合测量薄膜的厚度,得到了沉积速率随衬底温度变化规律,傅里叶红外(FTIR)表征了在KBr晶片衬底上制备的a-Si：H薄膜的红外光谱特性,SiH原子团键合模的震动对热量的吸收降低了薄膜热导率.从动力学角度分析了薄膜热导率随平均温度升高而增大的原因,并比较了声子传播和自由电子移动在a-Si：H薄膜热导率变化上的作用差异. 关键词： 非晶硅 热导率 薄膜 热能     

非晶硅锗电池性能的调控研究

采用射频等离子体增强化学气相沉积技术, 研究了非晶硅锗薄膜太阳电池. 针对非晶硅锗薄膜材料的本身特性, 通过调控硅锗合金中硅锗的比例, 实现了对硅锗薄膜太阳电池中开路电压和短路电流密度的分别控制. 借助于本征层硅锗材料帯隙梯度的设计, 获得了可有效用于多结叠层电池中的非晶硅锗电池. 关键词： 非晶硅锗薄膜太阳电池 短路电流密度 开路电压 带隙梯度     

Density of states modifications in amorphous and hydrogenated amorphous germanium and their effect on 3d core levels binding energy

By using photoemission and partial yield spectroscopies the conduction band edge, the valence band and the 3d core levels of amorphous germanium hydrogenated and nonhydrogenated are studied and compared to that of crystalline Ge. We measure a 0.25 eV shift of the 3d core levels of amorphous Ge as compared to crystalline Ge whereas a smaller shift and a slight line - broadening are found in hydrogenated amorphous samples with low H content. These results are discussed in term of the contribution to the self-energy due to relaxation of the valence electrons when a core hole is created.     

掺溴非晶碳梯度薄膜的制备与分析

采用低压等离子增强化学气相沉积法用溴乙烷、氢气制备了掺溴的非晶碳梯度薄膜。通过样品的XPS能谱分析研究了薄膜沉积速率与氢气流量、溴元素原子分数与溴乙烷流量以及溴元素原子分数与刻蚀时间之间的关系,得出了溴乙烷流量、刻蚀时间对薄膜的主要键态含量、C元素sp2/sp3键态杂化比和薄膜硬度的影响。结果表明：薄膜沉积速率随氢气流量的增加而线性减小,溴元素含量随溴乙烷流量的增加先增加后降低,刻蚀时间越长,溴乙烷流量越小,薄膜越硬     

掺溴非晶碳梯度薄膜的制备与分析

 采用低压等离子增强化学气相沉积法用溴乙烷、氢气制备了掺溴的非晶碳梯度薄膜。通过样品的XPS能谱分析研究了薄膜沉积速率与氢气流量、溴元素原子分数与溴乙烷流量以及溴元素原子分数与刻蚀时间之间的关系,得出了溴乙烷流量、刻蚀时间对薄膜的主要键态含量、C元素sp²/sp³键态杂化比和薄膜硬度的影响。结果表明：薄膜沉积速率随氢气流量的增加而线性减小,溴元素含量随溴乙烷流量的增加先增加后降低,刻蚀时间越长,溴乙烷流量越小,薄膜越硬     

渐变带隙氢化非晶硅锗薄膜太阳能电池的优化设计

利用一维微电子-光电子结构分析软件(AMPS-1D)在AM1.5G(100 mW/cm2)、室温条件下模拟和比较了有、无渐变带隙氢化非晶硅锗(a-SiGe:H)薄膜太阳能电池的各项性能.计算结果表明:渐变带隙结构电池具有较高的开路电压(V oc)和较好的填充因子(FF),转换效率(E ff)比非渐变带隙电池提高了0.477%.研究了氢化非晶硅(a-Si:H)、氢化非晶碳化硅(a-SiC:H)和氢化纳米晶硅(nc-Si:H)三种不同材料的窗口层对a-SiGe:H薄膜太阳能电池性能的影响.结果显示:在以nc-Si:H为窗口层的电池能带中,费米能级E F已经进入价带,使得窗口层电导率及电池开路电压有所提高,又由于ITO与p-nc-Si:H的接触势垒较低,使得接触处的电场降低,更有利于载流子的收集.另一方面,窗口层与a-SiGe:H薄膜之间存在较大的带隙差,在p/i界面由于能带补偿作用形成了价带势垒(带阶)?E v,阻碍了空穴的迁移,因此我们在p/i界面引入缓冲层,使得能带补偿作用得到释放,更有利于空穴的迁移和收集,得到优化后单结渐变带隙a-SiGe:H薄膜结构太阳能电池的转换效率达到了9.104%.     

Crystallization of hydrogenated amorphous silicon carbon films with laser and thermal annealing

The crystallization of silicon rich hydrogenated amorphous silicon carbon films prepared by Plasma Enhanced Chemical Vapor Deposition technique has been induced by excimer laser annealing as well as thermal annealing. The excimer laser energy density (E_d) and the annealing temperature were varied from 123 to 242 mJ/cm² and from 250 to 1200 °C respectively. The effects of the two crystallization processes on the structural properties and bonding configurations of the films have been studied. The main results are that for the laser annealed samples, cubic SiC crystallites are formed for E_d ≥ 188 mJ/cm², while for the thermal annealed samples, micro-crystallites SiC and polycrystalline hexagonal SiC are observed for the annealing temperature of 800 and 1200 °C respectively. The crystallinity degree has been found to improve with the increase in the laser energy density as well as with the increase in the annealing temperature.