Raman scattering from GaAs-InxGa1−xAs strained-layer superllatices

Measurements of Raman scattering were performed on GaAs-In_xGa_1?xAs strained-layer superlattices, grown by molecular beam epitaxy, with lattice periods ranging from 30 ～ 250 Å and In concentrations x, 0.22 and 0.37. Only one GaAs-like longitudinal optical phonon peak was observed in each strained-layer superlattice, in contrast to the well-known result that two peaks were observed in GaAs-Al_xGa_1?xAs superlattices. The GaAs-like phonon frequencies shifted from those of bulk GaAs to those of bulk In_xGa_1?xAs alloys as the ratio of the one-layer thickness of In_xGa_1?xAs to the lattice period increases from zero to one. We conclude that the GaAs-like phonon mode is a uniform mode of the whole strained-layer superlattice and the phonon frequency is determined by the averaged In concentration.     

Spin resonant optical four wave mixing in Pb1−xSnxTTe epitaxial layers and in Pb1−xSnx/PbTe superlattices

Spin resonances of the third-order non-linear susceptibility of epitaxial layers of n- and p-type Pb_1?xSn_xTe and Pb_1?xSn_xTe/PbTe superlatttices have been observed by four photon mixing of the radiation of two CO₂-lasers. Precise data on the effective g-values of the electrons and holes of Pb_1?xSn_xTe were obtained. These data and the results of magneto-optical interband absorption measurements are used to obtain k·p parameters within the Mitchell and Wallis band model. In the Pb_1?xSn_xTe/PbTe superlattices, the same g-values for electrons as in the Pb_1?xSn_xTe films with the same composition x are found. Consequently, the electrons in the superlattices are confined within the Pb_1?xSn_xTe layers. Therefore the Pb_1?xSn_xTe/PbTe system forms a type I and not a staggered superlattice.     

Fabrication of multilayered Ge nanocrystals embedded in SiOxGeNy films

Multilayered Ge nanocrystals embedded in SiO_xGeN_y films have been fabricated on Si substrate by a (Ge + SiO₂)/SiO_xGeN_y superlattice approach, using a rf magnetron sputtering technique with a Ge + SiO₂ composite target and subsequent thermal annealing in N₂ ambient at 750 °C for 30 min. X-ray diffraction (XRD) measurement indicated the formation of Ge nanocrystals with an average size estimated to be 5.4 nm. Raman scattering spectra showed a peak of the Ge-Ge vibrational mode downward shifted to 299.4 cm⁻¹, which was caused by quantum confinement of phonons in the Ge nanocrystals. Transmission electron microscopy (TEM) revealed that Ge nanocrystals were confined in (Ge + SiO₂) layers. This superlattice approach significantly improved both the size uniformity of Ge nanocrystals and their uniformity of spacing on the ‘Z’ growth direction.     

Thermal dependence of impurity induced fluorescence in the system RbMgxMn1-xF3

The absorption spectrum of RbMnF₃ and the excitation spectra of the system RbMg_xMn_1-xF₃ at 10 K as well as the fluorescence spectra and lifetimes of Mn²⁺ in the systems RbMg_xMn_1-xF₃ and KMg_xMn_1-xF₃ in the region 10–300 K were measured. The lifetime and fluorescence temperature dependence suggest that the origin of the fluorescence occurs at Mn²⁺ sites slightly perturbed by impurity ions and that a non-radiative energy transfer mechanism is responsible for the observed thermal quenching. By using different Mn²⁺ concentrations in the above systems the dependence of the energy transfer on the Mn²⁺ concentration is shown. Finally, a preliminary observation on laser stimulated Mn²⁺ luminescence in the system RbMg_xMn_1-xF₃ is reported.     

Self-consistent calculations of charge transfer and alloy scattering-limited mobility in InP-Ga1 − xInxAsyP1 − y single quantum wells

We present the results of self-consistent calculations of charge transfer and alloy scattering-limited mobility in modulation-doped InP-Ga_{1 ? x}In_xAs_yP_{1 ? y} single Quantum Wells at T = 0. The band-bending is treated in perturbation and the Electric Quantum Limit is assumed. Ternary Quantum Wells (y = 1) are calculated to have a lower mobility than single InP-Ga_{1 ? x}In_xAs heterojunctions, all material parameters being the same in both kinds of structures.     

Refractive index of Ga1−xAlxAs

A semi-empirical method for calculating the room temperature refractive index of Ga_1?xAl_xAs at energies below the direct band edge is presented. This quantity is important in the design of GaAs heterostructure lasers as well as other wave-guiding devices using these materials. The calculated values compare favorably with recent data. The method is shown to be useful for the Ga_1?xAs_xP system as well.     

First principles investigation of optical properties of zinc-blende AlxGa1−xAs1−yNy materials

We have performed a first-principle Full Potential Linearized Augmented Plane Waves calculation within the local density approximation (LDA) to the zinc-blende Al_xGa_1−xAs_1−yN_y to predict its optical properties as a function of N and Al mole fractions. The accurate calculations of electronic properties such as band structures and optical properties like refractive index, reflectivity and absorption coefficient of Al_xGa_1−xAs and Al_xGa_1−xAs_1−yN_y with x≤0.375 and y up to 4% are presented. Al_xGa_1−xAs on GaAs have a lattice mismatch less than 0.16% and the lattice constant of Al_xGa_1−xAs has a derivation parameter of 0.0113±0.0024. The band gap energies are calculated by LDA and the band anticrossing model using a matrix element of C_MN=2.32 and a N level of E_N=(1.625+0.069x) eV. The results show that Al_xGa_1−xAs can be very useful as a barrier layer in separate confinement heterostructure lasers and indicate that the best choice of x and y Al_xGa_1−xAs_1−yN_y could be an alternative to Al_xGa_1−xAs when utilized as active layers in quantum well lasers and high-efficiency solar cell structures.     

Magnetic ordering in EuxSr1−xSySe1−y

Specific heat and ac-susceptibility measurements are reported for Eu_xSr_1?xS_ySe_1?y samples. The critical concentrat ion for long-range magnetic ordering x_c increases with decreasing y, for y = 0.1, x_c = 1.0 holds. For samples with x < x_c a broad peak in the specific heat and a peak in the susceptibility at lower temperatures indicates a spin glass type of magnetic ordering.     

Direct evidence for controlled band filling in the mixed crystal NMPxPhen1−xTCNQ

Raman spectra of the segregated stack mixed crystal NMP_xPhen_1?xTNCQ and the mixed stack compound Phen TCNQ are presented. By means of the relation between charge transfer and line shift, we give for the first time a direct proof for controlled band filling in the mixed crystal series, whereas for Phen TCNQ a zero charge transfer is obtained. Raman spectra of Phenazine and the related NMP⁺ have also been measured and used for comparison.     

Evidence by Raman scattering on In1−xGaxAsyP1−y of the two-mode behaviour of In1−xGaxP

We report the Raman scattering study of optical vibrations in indium rich In_1?xGa_xAs_yP_1?y epitaxial layers grown on InP. We evidence the splitting of the LO line of InP even for very small x and demonstrate it is due to the presence of gallium in the samples. These results lead us to ascribe to In_1?xGa_xP a somewhat modified two-mode behaviour and to In_1?xGa_xAs_yP_1?y a four-mode behaviour.     

High frequency phonons in NbHx

The high frequency phonons of NbH_x with x = 0.46 and x = 0.59 have been measured with small momentum transfer on a triple axis spectrometer. The widths of the phonon peaks are determined by natural linewidths and not by the spectrometer resolution. Furthermore, the linewidths increase when going from the (α + β) phase to the α′ phase.     

Preparation of five-layered Si/SixGe1−x nano-films by RF helicon magnetron sputtering

Five-layered Si/Si_xGe_1−x films on Si(1 0 0) substrate with single-layer thickness of 30 nm, 10 nm and 5 nm, respectively were prepared by RF helicon magnetron sputtering with dual targets of Si and Ge to investigate the feasibility of an industrial fabrication method on multi-stacked superlattice structure for thin-film thermoelectric applications. The fine periodic structure is confirmed in the samples except for the case of 5 nm in single-layer thickness. Fine crystalline Si_xGe_1−x layer is obtained from 700 °C in substrate temperature, while higher than 700 °C is required for Si good layer. The composition ratio (x) in Si_xGe_1−x is varied depending on the applied power to Si and Ge targets. Typical power ratio to obtain x = 0.83 was 7:3, Hall coefficient, p-type carrier concentration, sheet carrier concentration and mobility measured for the sample composed of five layers of Si (10 nm)/Si_0.82Ge_0.18 (10 nm) are 2.55 × 10⁶ /°C, 2.56 × 10¹² cm⁻³, 1.28 × 10⁷ cm⁻², and 15.8 cm⁻²/(V s), respectively.     

Alloy effects in Ga1−xInxN/GaN heterostructures

We show that the large band offsets between GaN and InN and the heavy carrier effective masses preclude the use of the virtual crystal approximation to describe the electronic structure of Ga_1−xIn_xN/GaN heterostructures, while this approximation works very well for the Ga_1−xIn_xAs/GaAs heterostructures.     

Electronic conductivity in La1−xBaxF3−x crystals

The electronic conductivities of solid solutions La_1?xBa_xF_3?x (0 ? x ? 0.0952) were investigated up to 533 K using the Hebb-Wagner dc polarization technique. The electrochemical cell (-)La|La_1?xBa_xF_3?x|Pt(+) has been utilized with Pt as the ion-blocking electrode. Under steady-state conditions the La_1?xBa_xF_3?x solid solutions exhibit electronic conductivity. The electronic conductivity vanishes in pure LaF₃. Together with ac conductivity measurements it appears that the ionic transference number for La_1?xBa_xF_3?x (0 ? x ? 0.0952) is essentially unity over the temperature range studied.     

Spin effects on oscillatory magnetoresistances in n-Pb1−xSnxTe

Shubnikov-de Haas oscillations in n-Pb_1?xSn_xTe have been measured in the magnetic field parallel to the [100] crystal direction at 1.5 K. In the longitudinal magnetoresistances, the one-side peaks of spin-splitting pair series are completely missing. This anomaly is well explained by the selection rules, theoretically derived in the study on a similar effect in Hg_1?xCd_xTe. Landau sublevel-crossings are also discussed.     

Luminescence properties of LiPrxCe1−xP4O12

LiPr_1−xCe_xP₄O₁₂ (x=0, 0.002, 0.02; 0.1) powder samples were prepared using the melt solution technique. Luminescent parameters of LiPr_1−xCe_xP₄O₁₂ phosphors have been investigated under ultraviolet-vacuum ultraviolet (3-12 eV) synchrotron radiation and X-rays excitation at room and near liquid He temperatures. Excitation luminescence spectra of Ce³⁺ emission, luminescent spectra and decay curves from the lower excited state levels of the 4f¹5d¹ and 5d¹ electronic configuration of the Pr³⁺ and Ce³⁺, respectively, clearly indicate energy transfer from Pr³⁺ to Ce³⁺. Energy migration proceeds via the Pr-sublattice followed by nonradiation transfer from Pr³⁺ to Ce³⁺ ions.     

Population analysis solution to hardness enhancement in TiCxN1−x

We investigated the hardness enhancement in titanium carbonitrides (TiC_xN_1−x) by the population analysis method based on first-principles calculations. Populations for bonds TiC and TiN in TiC_xN_1−x (0.25<x<0.75) are all positive. The enhanced hardness for titanium carbonitrides is well explained by overlap population analysis. Intrinsic hardness of TiC_xN_1−x has been calculated based on the obtained overlap populations. The calculated results are in good agreement with the available experimental data.     

Electrical property of HfOxNy-HfO2-HfOxNy sandwich-stack films

The effects of HfO_xN_y on the electrical property of HfO_xN_y-HfO₂-HfO_xN_y sandwich-stack (signed as SS) films were investigated. Excellent electrical performances were achieved in SS films, with a high dielectric constant of 16 and a low leakage current of ∼2 × 10⁻⁸ A/cm² at 1 MV/cm. Schottky (SK) emission and Frenkel-Poole (PF) emission are found to be the dominant mechanisms for the current conduction behavior. After a long time stress, the flat-band voltage shift in the SS film is much smaller than that in a pure HfO_xN_y film indicating fewer charge traps existed in the SS film. Based on the experiments, the new SS structure is more favorable for the improvement of electrical performances than a pure HfO_xN_y or HfO₂ structure.     

Tunneling induced electron transfer in SiNx/AlGaN/GaN based metal-insulator-semiconductor structures

Tunneling induced electron transfer in SiN_x/Al_0.22Ga_0.78N/GaN based metal-insulator-semiconductor (MIS) structures has been investigated by means of capacitance-voltage (C-V) measurements at various temperatures. Large clock-wise hysteresis window in C-V profiles indicates the injection of electrons from the two-dimensional electron gas (2DEG) channel to the SiN_x layer. Depletion of the 2DEG at positive bias in the negative sweeping direction indicates that the charges injected have a long decay time, which was also observed in the recovery process of the capacitance after injection. The tunneling induced electron transfer effect in SiN_x/Al_0.22Ga_0.78N/GaN based MIS structure opens up a way to design Al_xGa_1−xN/GaN based variable capacitors and memory devices.     

Magnetic phase diagram of GdAg1−xZnx

The magnetic phase diagram of GdAg_1?xZn_x, an intermetallic solid solution of an antiferromagnet (GdAg: T_N = 136 K) and a ferromagnet (GdZn: T_C = 269 K), has been elaborated from magnetization measurements. The antiferromagnetic phase boundary T_N(x) first passes a broad maximum meeting the ferromagnetic phase boundary T_C(x) at x₁ = 0.575 and T₁ = 72 K, where four phases coexist. On approaching (x₁, T₁) along T_N(x) the magnetization phenomena vanish. At x₁ the phase transition still has ferromagnetic appearance but proceeds into a state without spontaneous magnetic moment. Two different ferromagnetic phases (F₁, F₂) and one ferrimagnetic phase (F₃) occur in the composition intervals 0.69 < x₁ <1, and 0.61 <x₂ < 0.69 and 0.51 < x₃ < 0.61. All phase transitions seem to be of second order except th e F₁?F₂ one at x = 0.69 which is of first order. This phase line meets the paramagnetic to ferromagnetic phase boundary T_C(x) in a multicritical point with the coordinates x_m = 0.69, T_m = 123 K.Six further mixed magnetic phases, M_{1, 2, ..., 6}, are observed between x = 0.33 and 0.6 below the antiferromagnetic branch and exhibit irreversible thermodynamic properties, such as hysteresis, below about 40 K.Assuming local magnetic interactions only between nearest and next-nearest Gd neighbours, the T_N(x) and T_C(x) phase boundaries can be described fairly well by a simple model calculation using different exchange parameters for a few relevant distributions of Ag and Zn atoms.