Effect of size variation on the cathodoluminescence characteristics of graphene quantum dots

Cathodoluminescence (CL) has been studied in graphene quantum dots (GQDs) by varying their average size (d) from 5 to 35 nm. The size dependence of CL peak wavelength is very analogous to that of photoluminescence (PL) peak wavelength unusually showing non-monotonic behaviors having a maximum at d = ∼17 nm. The CL behaviors can therefore be attributed to the novel feature of GQDs, i.e., the circular-to-polygonal-shape and corresponding edge-state variations of GQDs at d = ∼17 nm as d increases. However, the peak wavelengths of CL are especially much smaller than those of PL at both ends in the size range of GQDs, possibly resulting from the recombination of the electron-beam-excited e-h pairs at higher energy states before thermalization due to fast carrier-carrier scattering dominating over electron-phonon scattering in graphene.     

Cathodoluminescence microscopic studies of α-HgI2 platelets and crystals

Cathodo Luminescence studies (CL) have been carried out on red mercuric-iodide (α-HgI₂) crystals and platelets grown by the vapor transport method. Panchromatic CL images revealed inhomogeneous distribution of growth-induced dislocations and terraces. The effect of prolonged KI (20%) treatment on the evolution of different CL bands has been investigated. CL spectra of the platelets at 80 K showed three luminescence bands at about 546, 567 and 624 nm. The intensity of the 567 nm band (band II) decreased after KI treatment, thus indicating the role of I vacancies on the evolution of this band. An additional band at about 555 nm is observed in as-grown crystals, but not revealed in platelets. Increase of the relative intensity of band III (624 nm) on prolonged KI treatment indicates the association of some surface states on this band along with the effect of impurities as reported earlier. Hg treatment causes an increase of total CL intensity and also the relative intensity of band II in platelets and crystals.     

Optical properties of InGaN/GaN double quantum wells with varying well thickness

The optical properties and recombination kinetics of the InGaN/GaN double quantum well (DQW) structures with different well thickness (L_w) have been studied by means of photoluminescence (PL), time-resolved PL, and cathodoluminescence (CL) measurements. With increasing quantum well thickness up to 4 nm, the PL emission energy decreases and the blueshift of the PL emission energy increases with increasing excitation density. On the other hand, the PL emission energy of the DQWs with L_w=16 nm is higher than that of the DQWs with L_w=4 nm, and is independent of the excitation density. With increasing L_w from 1 to 4 nm, the PL decay times increase. In contrast, the decay times of 16 nm DQWs are faster than those of 4 nm DQWs. These different results for 16 nm DQWs such as the blueshift of the emission energy, the decrease of the excitation density dependence, and the increase of recombination rate can be ascribed to the relaxation of the piezoelectric field. We also observed the inhomegeneity in the CL spectra of the DQWs with L_w=1 nm on 1 μm scale.     

Comparisons of spectral properties of CsI:T1 crystals with various Tl(+)-doped concentrations

Absorption Spectra and Photoluminescence (PL) spectra of CsI: T1 crystals with various T1+-concentrations were measured for absorption and luminescent research in CsI: T1. Their UV absorption spectra contained three peaks at 297, 273 and 247 nm. The experiments were demonstrated that the peaks in the high T(1+)-concentration CsI: T1 crystals are broader than ones in the low T(1+)-concentration crystals and their absorption A-peak shift by 20 nm, but their PL with UV excitations are similar. It was suggested that lattice distortions in the high T1+-concentration CsI: T1 lead to the changes in absorption or fluorescence excitation peaks, but no changes in the fluorescence band widths and locations at room temperature.     

Resonance energy transfer in ZnS:Mn crystals in the processes of photoluminescence and electroluminescence

The spectra of photoluminescence (PL), electroluminescence (EL), and optically detected magnetic resonance were studied in ZnS single crystals. It is shown that, in ZnS:Mn crystals, PL at λ_max=590 nm excited with light in the extrinsic-absorption region for ZnS (λ = 365 nm) is controlled by the resonance-excitation mechanism; in contrast, the EL can be excited by both the resonance-and impact-related mechanisms.     

闪烁晶体碘化铯在紫外光和X射线激发下的发光特性

室温下掺铊碘化铯(CsI∶Tl)晶体的吸收谱在230~320 nm范围内有3个特征峰:310 nm(4 eV)、270nm(4.6 eV)和245 nm(5.1 eV)。采用这3种不同激发能量(对应不同激发机制)的近紫外(UV)光激发得到的荧光(PL)光谱相同。这些PL谱与钨(W)靶X射线激发的辐照致荧光(RL)谱也类似。经分峰计算,PL和RL均含有4种熟知的3.1 eV(400 nm)、2.55 eV(486 nm)、2.25 eV(550 nm)和2.1 eV(590 nm)发光组分,但RL中2.1 eV组分高于PL,同时2.55 eV组分又低于PL。分析认为,这一差异来自于X射线对晶体的辐照损伤Tl+Va+、Tl0Va+,相关的2.1 eV吸收峰与2.55 eV发光带重叠。结果表明:X射线比紫外光更易产生损伤从而影响晶体CsI∶Tl的发光特性。     

Sensitized luminescence through nanoscopic effects of ZnO encapsulated in SiO2:Tb sol gel derived phosphor

Terbium (1 mol%) doped ZnO-SiO₂ binary system was prepared by a sol-gel process. Nanoscopic effects of ZnO on the photoluminescence (PL) and the cathodoluminescence (CL) properties were studied. Defects emission from ZnO nanoparticles was measured at 560 nm and the line emission from Tb³⁺ ions in SiO₂:Tb³⁺ and ZnO-SiO₂:Tb³⁺ with a major peak at 542 nm was measured. The PL excitation wavelength for 542 nm Tb³⁺ emission was measured at ∼320 nm in both SiO₂:Tb³⁺ and ZnO-SiO₂:Tb³⁺. The CL data showed quenched luminescence of the ZnO nanoparticles at 560 nm from a composite of ZnO-SiO₂:Tb³⁺ and a subsequent increase in 542 nm emission from the Tb³⁺ ions. This suggests that energy was transferred from the ZnO nanoparticles to enhance the green emission of the Tb³⁺ ions. The PL and CL properties of ZnO-SiO₂:Tb³⁺ binary system and possible mechanism for energy transfer from the ZnO nanoparticles to Tb³⁺ ions are discussed.     

Thermoluminescence and photoluminescence studies on gamma irradiated CsI: Pb2+ crystals

Pure and Pb²⁺-doped CsI crystals have been grown by the Bridgemann technique. Optical absorption, thermoluminescence (TL) and photoluminescence (PL) measurements have been performed. In undoped and Pb²⁺-doped cesium iodide crystals, F-centers and V-centers have been produced at 770 nm and 350 nm, respectively. In Pb²⁺-doped crystals, additional centers at 373 nm, 290 nm and 258 nm bands have been produced. In undoped samples, only two glow peaks at 343 K and 373 K have been produced, and in Pb²⁺-doped samples additional glow peaks at 383 K and 423 K have been produced. For all the samples, TL emission, PL and excitation measurements have been performed.     

Optical studies in gamma irradiated Mg doped CaF2 single crystals

Pure and Mg doped CaF₂ single crystals grown by the Bridgman method were irradiated with gamma rays (γ-rays) for doses ranging from 97 Gy to 9.72 KGy. The pristine samples showed minimal absorption indicating the purity of the samples. The γ-irradiated pure CaF₂ crystals showed prominent and strong absorption with a peak at ~ 374 nm besides three weak ones at ~ 456, 523 and 623 nm. However γ-rayed Mg doped crystals showed a prominent absorption with a strong peak at ~ 370 nm and a broad one at ~ 530 nm. The absorption indicated the generation of F and F-aggregate centers in the irradiated crystals. The photoluminescence (PL) emission spectrum of both pure and Mg doped crystals showed prominent emission at ~ 390 nm when they were excited at ~ 250 nm. Also, when the samples were excited at 323 and 363 nm strong emissions were observed at ~ 430 and 422 nm respectively. The optical absorption and PL intensities were found to increase with increase in dose.     

Zn2 SnO4 立方体的水热合成及其荧光性质

利用水合肼作缓释型碱源和络合剂,采用水热法合成了Zn₂SnO₄立方多面体。XRD物相分析表明,产物为结晶良好的立方反尖晶石结构Zn₂SnO₄。FESEM和TEM形貌分析表明,该Zn₂SnO₄微晶为边长100~400 nm左右的立方体,其光致发光光谱是蓝-绿光发射带(中心590 nm处),在400 ℃空气气氛下退火1 h后,蓝-绿光发射带的强度显著降低。这主要是因为退火处理提高了晶体质量,降低了氧空位浓度,从而降低了可见光发射带的强度。     

Photoluminescence from ZnO-SiO2 opals with different sphere diameters and thicknesses

We systematically investigated the photoluminescence (PL) and transmittance characteristics of ZnO-SiO₂ opals with varied positions of the stop-band and film thicknesses. An improved ultraviolet (UV) luminescence was observed from ZnO-SiO₂ composites over pure ZnO nanocrystals under 325 nm He-Cd laser excitation at room temperature. The UV PL of ZnO nanocrystals in SiO₂ opals with stop-bands center of 410 nm is sensitive to the thickness of opal films, and the UV PL intensity increases with the film thickness increasing. The PL spectra of ZnO nanocrystals in SiO₂ opals with stop-bands center of 570 nm show a suppression of the weak visible band. The experimental results are discussed based on the scattering and/or absorbance in opal crystals.     

Growth and characterisation of Eu doped GaN thin films

We have studied the optical properties of Eu doped GaN thin films. We have grown high quality Eu doped GaN thin films by using Gas Source Molecular Beam Epitaxy (GSMBE), with 1.4% Eu concentration. The Full Width at Half Maximum (FWHM) of the X-ray diffraction in an omega scan was found to be 288 arcsecs. Low Eu concentration (0.08%) doped GaN thin films were grown, where Eu-related photoluminescence at 622 and 613 nm was detected using above band-gap excitation at 2 K. For high Eu concentration of 30% GaN:Eu crystal photoluminescence (PL) and cathodoluminescence (CL) spectra show strong and intense transitions at 622 and 664 nm, but also at 593 nm for CL spectra, with a similar transition observed from the low Eu concentration sample.     

Three-photon excited PL spectroscopy and photo-generated Frenkel defects in wide-bandgap layered CdI2 semiconductors

We performed a three-photon excitation nonlinear photoluminescence (PL) spectroscopy in single crystals of wide-bandgap semiconductors (WBSs). The crystal temperature (TL)-dependent PL emission intensity (IPL) excited with different excitation power density (P) was measured. The PL emissions showed characteristics IPL with their maxima at around 520 nm. The IPL might be due to the presence of the photo-generated Frenkel defects (FDs) in WBSs. A detailed analysis of the PL spectra showed a third-order power law dependence of the maximum IPL on P for all the crystal temperature TL. The IPL was found to increase with decreasing TL. The results demonstrated the existence of the self-trapped excitons resulting from the presence of the FDs in the crystals.     

CdSe infiltrated TiO2 based omnidirectional photonic crystals for visible light control

Control of light emission by engineering the electromagnetic vacuum is important in photonics for fundamental understanding as well as in applications. Omnidirectional photonic crystals such as logpile photonic crystals provide a very interesting system to study such phenomena. Here, we describe the first steps towards achieving systematic and reproducible control of light using titanium dioxide (TiO₂) logpile photonic crystals (PC) with incorporated cadmium chalcogenide (CdSe) quantum dots (QDs) (λ  600 nm) to potentially modify QD photoluminescence (PL). We present a technique for coating a monolayer of the QDs on the PC rods based on 3-mercaptopropyltrimethoxysilanol linkage and measured the resulting PL response. Comparison of the PL spectra to a finite difference time domain model shows the need for further localization of QDs and fabrication of additional PC unit cells to observe PL modification.     

Cathodoluminescence of monoclinic Li3AlF6 crystals in the spectral region of 150–600 nm

Cathodoluminescence (CL) of monoclinic LiAF crystals was studied in the spectral (150–600 nm) and temperature (78–302 K) ranges using both the steady-state CL and pulse CL (PCL) techniques. Three CL emission bands were found in the spectral range of 150–600 nm. The dominant complex CL band at 350 nm obeys the Mott law (E = 0.072 eV and ω = 750). On heating, the 172 and 208–212 nm CL bands vary in intensity non-monotonically. At T = 78 K, the CL decay kinetics comprises three components: a dominant fast exponential component with a lifetime of 750 ns, and two low-intensity components with the lifetimes of 20 and 240 μs. The last two components were fitted by a second order hyperbolic law. Time-resolved PCL spectra were recorded using time-windows corresponding to the PCL decay components. Paper discusses the reasonable interpretation of the CL emission bands.     

Cathodoluminescence properties of silicon nanocrystallites embedded in silicon oxide thin films

Cathodoluminescence (CL) spectra for the Si nanocrystallites embedded in a matrix of silicon oxide films are measured at room temperature. The CL spectra consist of two principal bands whose peak energies are in a near-infrared (NIR) region (<1.6 eV) and in a blue region (2.6 eV), respectively. The spectral feature of the NIR CL band is similar to the corresponding PL spectra. The strong correlation between the presence of Si nanocrystallites and the formation of the NIR CL band are found as well as the PL spectrum. The peak energy of the blue CL band is slightly lower than that of the luminescence band originating from oxygen vacancies (≡Si–Si≡) in SiO₂. Therefore, the blue CL band is considered to come from Si_n clusters with n3 in the oxide matrix. Under irradiation of electron beams, degradation of the intensity is observed for both the CL bands but the decay characteristics are different.     

Photoluminescence of Copper-Doped Lithium Niobate Crystals

The photoluminescence (PL) of copper-doped lithium niobate single crystals is studied using different UV–Vis light-emitting diodes and a pulse-periodic laser with a wavelength of 266 nm as excitation radiation sources. With the resonance excitation from a 527-nm light-emitting diode, the intensity of PL increases sharply (by two orders of magnitude). When using a 467-nm light-emitting diode for excitation, the PL spectrum is characterized by the presence of multiphonon lines in the range of 520–620 nm.     

Photoluminescence of quenched MgO crystals

Quenching of MgO crystals produces an increase of the photoluminescence emission in the 400 nm region and often the appearance of a shoulder at 470–490 nm previously observed in CL experiments. An emission band at 560 nm which is not related to the F centre band has also been observed.     

注入Ar+的蓝宝石晶体退火前后光致发光谱的分析

对注入Ar⁺后不同晶面取向的蓝宝石晶体在不同退火条件下的光致发光谱进行了分析.分析结果表明:三种晶面取向的蓝宝石样品经Ar⁺注入后,其光致发光谱中均出现了新的位于506nm处的发光峰;真空和空气气氛下的退火均对样品在506nm处的发光有增强作用,不同晶面取向的样品发光增强程度不同,且发光增强至最大时的退火温度也不同,空气气氛下的退火使样品发光增强程度更为显著.由此可以看出,退火气氛、退火温度和晶面取向均对样品发光峰强度有影响. 关键词： 2O₃')" href="#">Al₂O₃ 离子注入 退火 光致发光谱     

Localization of nonequilibrium current carriers close to Cr ions in ZnSe:Cr single crystals

The photoluminescence (PL) of Cr-doped ZnSe single crystals is investigated in a temperature interval from 83 up to 297 K and in a wavelengths region from 440 up to 2700 nm. The doping was carried out during a high-temperature annealing of ZnSe crystals in CrSe vapors and in chrome chlorides medium. It is revealed that the doping results in an appearance of both luminescence bands located at 0.54, 0.97, and 2.15 μm and edge luminescence bands located at 454, 457, and 460 nm at 83 K. It is shown that the PL bands located at 457 and 460 nm are caused by the radiative recombination with the participation of holes located on hydrogen-like orbits close to Cr⁺ centers, having a binding energy of 99 meV. The excitons bound with centers responsible for the radiation located at 0.54 μm and having a binding energy of 65-68 meV are considered. The energy of a lattice relaxation at recharge of centers responsible for green radiation is estimated and equals 40-170 meV.