溶液中β胡萝卜素的共振拉曼光谱性质的研究

β胡萝卜素是一种重要的共轭多烯生物分子, 其在光电器件与功能材料等研制方面有重要应用。本文利用金刚石对顶砧技术, 在0～0.60 GPa的压强范围下, 分别对β胡萝卜素溶于水和二硫化碳溶液进行了原位拉曼光谱测量, 比较了二者的拉曼频移和半高宽等光谱特性。实验结果表明, 两种样品的拉曼频移均随着压强的增加而向高波数方向移动, 半高宽也随之增加。引用线性链状多烯分子的两种理论模型, 即 “相干弱阻尼电子-晶格振动模型”和 “有效共轭长度模型”等理论给予了解释。其机理是由于压力的增加, β胡萝卜素分子被压缩, 结构有序性下降, 有效共轭长度减小, 拉曼活性降低, 碳碳键的相干弱阻尼电子-晶格振动减弱。CC键的键长变短, 因此拉曼蓝移; CC键的键长差增加, 从而使半高宽增加。此外, 由于β胡萝卜素溶于非极性溶剂CS₂溶液中, 受到周围溶剂分子的作用, 使溶质与溶剂之间的色散力作用对压力更敏感一些, 从而使得其拉曼频移和半高宽随压强变化的斜率要比溶于水中的大。为研究共轭多烯分子在外场下的分子结构变化以及溶剂中分子的存在形式等具有一定的应用价值。     

Relationship between bond angle disorder and the optical edge of aGe:H

We report changes in optical absorption and Raman spectra of a-Ge:H when H content is increased from 0 to 16 atomic %. Increasing H content increases the optical gap by 0.4eV, sharpens the absorption tail by a factor of two and decreases bond angle fluctuations by 2⁰. We conclude that H can affect the optical edge by decreasing network disorder.     

High–pressure electrical conductivity and Raman spectroscopy of chalcanthite

Abstract

The phase transitions and dehydration of chalcanthite were investigated by electrical conductivity and Raman spectroscopy at 1.0–24.0?GPa and 293–673?K in a diamond anvil cell. At ambient temperature, two secondary phase transitions were observed according to discontinuous changes in the slope of Raman shifts, full width at half maximum and electrical conductivities at ～7.3 and ～10.3?GPa. The dehydration temperatures were determined by the splitting of Raman peaks and changes in electrical conductivity as ～350 and ～500?K at respective ～3.0 and ～6.0?GPa. A positive relationship for chalcanthite between dehydration temperature and pressure is established.     

Raman Scattering of amorphous selenium films

First order Raman scattering measurements are presented for thin film evaporated a-Se. High temperature films yield polarized and depolarized spectra that are very similar to those of bulk a-Se. Low temperature in situ studied films indicate increased disorder and a considerable reduction in the intensity of the ring attributed 112 cm^?1 peak. The Raman spectra of higher temperature films are consistent with a small number of rings and ordered chains that arise from constraints on the dihedral angle. Films deposited at low temperature suggest a reduction in chain order and ring population as might arise from a weakening of constraints on the dihedral angle.     

Ge/Au,Ge/Ag双层膜和Ge-Au,Ge-Ag合金膜中非晶Ge的晶化

本文对Ge/An,Ge/Ag,双层膜和Ge-An,Ge-Ag合金膜的退火过程进行了透射电子显微镜观测,对Ge/多晶Au(或Ag)还进行了加热过程的原位观测。观测表明,多晶Au和单晶Au膜的存在使非晶Ge的晶化温度T_c的下降显著不同,可由晶界三叉点等处为非晶Ge的有利形核位置来解释,双层膜的缩聚区中由于局域优先晶化的影响,不仅T_c(=100℃)比非缩聚区中(T_c=150℃)低,而且形成直径为1—2μm的Ge大晶粒,而Ge/多晶Ag和Ge/单晶Ag膜的T_c均约为280℃,合金膜中金属含量较低时(C_Au<17at％,C_Ag<18at％),T_c高于相应的Ge/多晶Au(Ag)膜;金属含量较高时,T_c低于Ge/多晶Au(Ag)膜。这说明过饱和金属原子的存在使得非晶Ge的晶化势垒大大降低。 关键词：     

BSO晶体的高温拉曼光谱与高温结构特征

阐述了BSO晶体在常温下的结构特征,通过测量晶体在常温下的拉曼光谱,对晶格主要振动模式进行了指认,测量晶体升温至熔化过程中不同温度下的拉曼光谱,分析研究了其微观结构在升温过程中的变化以及在高温状态下的结构特征。     

氨基酸的太赫兹光谱温度相关性研究

采用可调温太赫兹时域光谱(TDS-THz)系统,测量了脂肪族L-天冬酰胺、L-半胱氨酸、L-丙氨酸和芳香族L-酪氨酸四种氨基酸在低温下的温度特性,实验中,分别在降温和升温过程中选取了以下温度节点：常温,250,200,150,100,70,40,10以及4.5 K等,观察样品对太赫兹吸收光谱的异同;结合傅里叶变换红外光谱仪(FTIR)对室温下上述四种氨基酸在低频段(0.5～2 THz)范围内的吸收峰进行了验证,同时采用拉曼光谱仪测试了高频段(3～6 THz)范围内的这四种氨基酸在常温下的拉曼强度,以此来验证了实验的准确性。结果表明：脂肪族和芳香族氨基酸太赫兹光谱对温度变化的响应存在差异,随着温度降低,两类氨基酸的吸收峰位置均发生蓝移现象, 同时部分氨基酸出现新的吸收峰,但是吸收峰线宽的变化略有不同。最后,采用量子化学Gaussian 09软件包,分别选取一种脂肪族氨基酸和一种芳香族氨基酸,通过密度泛函理论对其单分子和晶胞结构进行了计算,对比测试结果可以得出两种氨基酸的振动模式是由分子间作用力形成的。     

Melting of the cooperative Jahn-Teller distortion in LaMnO 3 single crystal studied by Raman spectroscopy

We have studied the behavior of the Raman phonons of a stoichiometric LaMnO₃ single crystal as a function of temperature in the range between 77 K and 900 K. We focus on the three main phonon peaks of the Pbnm structure, related to the tilt, antisymmetric stretching (Jahn-Teller mode) and stretching modes of Mn-O octahedra. The phonon frequencies show a strong softening that can be fit taking into account their renormalization because of three phonon anharmonic effects in the pseudoharmonic approximation. Thermal expansion effects, in particular the variation of Mn-O bond lengths with temperature, are not relevant above 300 K. On the contrary, phonon width behavior deviates from the three phonon scattering processes well bellow T _c . The correlation between the magnitude of the cooperative Jahn-Teller distortion, that disappears at 800 K, and the amplitude of the Raman phonons in the orthorhombic phase is shown. Nevertheless, Pbnm phonons are still observable above this temperature. Phonon width and intensity behavior around T _c can be explained by local melting of the orbital order that begins quite below T _c and by fluctuations of the regular Mn-O octahedra that correspond to dynamic Jahn-Teller distortions. Received 25 January 2001 and Received in final form 14 March 2001     

Magnetoresistance in amorphous germanium

Magnetoresistance of sputtered films of a-Ge has been studied. The experiments were performed in the temperature range 78–450 K and in magnetic fields up to 7 kG. The magnetoresistance has been found to be negative up to 450 K and changes its sign at 80 K. The experiments are confronted with a model based on the Zeeman splitting of localized electronic levels in the applied magnetic field. It is shown that such model can lead to relatively good agreement between the theory and the experiment.We are grateful to B.Velický for discussions about the subject matter of this paper and to J.Zemek for preparation of germanium samples.     

六方晶型MgTiO3温致微结构变化及其原位拉曼光谱研究

采用固相烧结法制备了六方晶型结构的MgTiO₃粉体. 经高温原位X射线衍射分析(293-1473 K)进行了表征与确认,获得了晶胞参数及其随温度的变化,测量了高温原位拉曼光谱(273-1623 K),并运用第一性原理理论计算方法对应核实了拉曼谱峰的归属. 结果表明,随着温度升高,MgTiO₃晶面间距和晶格常数增大,从而反映对于拉曼光谱较为敏感的键长和键角的变化;温致拉曼位移可以反映Ti-O,Mg-O等键长以及Ti-O-Ti,Ti-O-Mg与Mg-O-Mg等键角随温度的细微变化,相关关系则独立于温度,有效提升了原位拉曼光谱微探针诊断技术的分析能力;拉曼谱峰随温度升高而展宽,表明原子瞬间运动振幅加剧,弥散性增加,稳定性有所下降,但仍维持六方晶型. 关键词： 3')" href="#">MgTiO₃ 微结构 拉曼光谱 高温     

Improved performances in low-voltage-driven InGaZnO thin film transistors using a SiO2 buffer layer insertion

Al (5 nm)/Ga-doped ZnO (GZO, 100 nm) double-layer films were prepared at room temperature by magnetron sputtering. It is found that the crystal structure of GZO is degraded due to the existence of Al layer. Semiconductor transport behavior is observed in GZO and Al/GZO films in the temperature range of 80～360 K. As opposed to that of GZO, the resistivity of Al/GZO shows a significant decrease with increasing the temperature from 320 to 360 K. To understand the temperature dependent resistivity, Al (5 nm)/GZO film was annealed in vacuum in the temperature range of 398～573 K. High-resolution TEM observations reveal that Al grains become more and more isolated as the annealing temperature increases. The decreasing resistivity above 320 K for the Al/GZO system is considered to be caused by the substitution of Al atoms for Zn atoms at the interface, showing an improvement in the transmittance with over 90 % especially at 398 K.     

MgB2超导薄膜的变温拉曼光谱研究

MgB₂作为迄今为止超导转变温度最高的合金超导体,由于其具有结构简单、相干长度长、晶界间不存在弱连接、上临界场很高、电-声散射时间短等特点,MgB₂超导薄膜在电子学领域有着广阔的的应用前景。拉曼光谱是研究电-声子相互作用和超导能带的一种有效方法,且已广泛用于分析MgB₂材料的电子、声子特征以及超导体能带结构,研究表明,样品质量、晶粒尺寸以及测试条件对MgB₂拉曼峰的峰位和峰形影响很大,其中拉曼光谱随温度的变化也是一个研究重点,但目前关于MgB₂变温拉曼光谱的研究,测试的温度范围相对较小,局限在83 K到室温区域或是转变温度附近。研究了大范围温度区间内MgB₂薄膜的拉曼光谱变化,采用混合物理化学沉积法在(0001)SiC衬底上制备了MgB₂多晶薄膜,薄膜的晶粒尺寸约为300 nm,超导转变温度为39.3 K,对其在10～293 K之间的拉曼光谱进行了测试,测量的波数范围为20～1 200 cm-1。变温拉曼光谱的测试结果显示,在高频620 cm-1附近以及低频80和110 cm-1附近存在MgB₂的拉曼峰。经分析,低频区域出现的两个拉曼峰的频率与超导能隙宽度相对应,表明MgB₂的双能隙特性。考虑到MgB₂中四种声子模式的拉曼活性,高频620 cm-1附近的拉曼峰应是由E_2g振动模所贡献的,且随着测试温度的降低,该拉曼峰的峰位未发生明显的偏移,但半高宽显著变小,从293 K时的380.7 cm-1减小到10 K时的155 .7 cm-1,分析表明E_2g声子与电子系统的非线性耦合所引起的非简谐效应可能是拉曼峰半高宽线性变小的主要原因。     

The role of temperature on the structure of liquid Te0.7Se03. between

Raman scattering measurements are reported on liquid Te_0.7Se_0.3 between ～400–600 C. In contrast to recent compositional studies which indicate a structural change from 3-fold to 2-fold bonding, the effect of temperature is not found to modify the 2-fold bonding in this alloy. This result differs from previous models that have related the nonmetal-metal transition to major changes in liquid network short range order. The Raman results imply, in contrast, increased intrachain disorder with temperature.     

Fabrication of large-grain polycrystalline Ge films using absorptive films

Amorphous germanium (a-Ge) films in samples with or without an absorptive film are crystallized by short-pulse XeF excimer laser crystallization (ELC). An in situ time-resolved optical reflection and transmission (TRORT) monitoring system combining a cw He-Ne probe laser, a digital oscilloscope and two photodetectors is developed to investigate the melting and resolidification dynamics of Ge films during ELC. TRORT measurements reveal that the longest melt duration is prolonged from 250 to 1000 ns by adding absorptive films in the samples. Absorptive films are shown to be effective in improving the melt duration of the molten state and the grain size of polycrystalline Ge films. The grain size with a diameter of approximately 12 μm can be fabricated in the superlateral growth regime for 90-nm-thick a-Ge films at room temperature in air by single-shot ELC.     

Temperature dependent Raman scattering in polycrystalline Bi4Ti3O12 thin films

Polycrystalline Bi₄Ti₃O₁₂ thin films were prepared on quartz substrates by pulsed laser deposition. The films were crystallized in the orthorhombic layer perovskite structure confirmed by X-ray diffraction and Raman spectroscopy. The Raman spectra are strongly dependent on temperature. A subtle phase transition in the temperature range 473-573 K exists in polycrystalline BTO thin films, which is evidenced by the disappearance of the Raman band at 116 cm⁻¹ and appearance of a new Raman band at 151 cm⁻¹. The two broad Raman bands centered at the 57 and 93 cm⁻¹ at 300 K break up into clusters of several sharp Raman peaks at 77 K, due to monoclinic distortion of orthorhombic structure at low temperature in the as-prepared Bi₄Ti₃O₁₂ thin films.     

Langevin description of Markov master equations II: Noise correlations

We present experimental results of dielectric and birefringence measurements on 3.5% and 8% Li∶KTaO₃ as a function of temperature. These results indicate that the 8% Li∶KTaO₃ sample undergoes a ferroelectric phase transition at 97 K. The 3.5% sample seems to undergo a distortive transition at ～75 K. Raman experiments show that the splitting of the TO₁ mode of the 8% Li sample extrapolates to zero at ～97 K supporting the conclusion that this sample undergoes a phase transition at this temperature. Raman spectra of both samples at temperatures above the phase transition or freezing temperatures exhibit in addition to second order Raman features first order Raman lines. These lines have the properties of fluctuation induced first order Raman scattering. Measurement of the integrated intensity of these lines is used to obtain the temperature dependence of the fluctuation intensity. The results are compared to the Halperin and Varma theory. The data obtained for the 3.5% Li sample partialy fits the theory. However the results for the 8% Li sample do not fit the theory. The misfit is attributed to the overlap of defect zones.     

TiO_2晶型及其相变的高温拉曼光谱研究

本文测量了锐钛矿型和金红石型TiO2常温至1923K的高温拉曼光谱,观察了锐钛矿型TiO2在1373K～1473K间发生相变,不可逆转化为金红石型TiO2,分析了特征峰随温度变化的规律以及两种结构相的温度依赖性。并为不同晶型TiO2的研究、生产和应用提供重要的实验依据。     

纳米TiO_2薄膜的结构与光电特性

用射频磁控溅射方法制备出厚度大约15-225nm的TiO2薄膜。Raman光谱测量显示,TiO2薄膜主要是金红石结构(含少量板钛矿相)。紫外可见光吸收光谱表明,在纳米厚度(100nm)范围内,TiO2薄膜的带隙宽度随着薄膜厚度的变化而变化。室温下测量TiO2薄膜的电阻率发现,随着厚度的增加TiO2薄膜的电阻率先后在导体、半导体和绝缘体范围变化。     

Low-frequency Raman scattering study of the ferroelectric phase transition in the DKDP crystal

The low-frequency Raman scattering spectra of the DKDP ferroelectric crystal are studied in the temperature range 30–393 K. At temperatures above 150 K, the Raman spectra exhibit a central peak which reflects the lattice relaxation susceptibility. The width and integrated intensity of the central peak are derived from the experimental spectra. The critical slowing down of the relaxation response predicted by the Ginzburg-Landau-Devonshire theory is observed throughout the temperature range in which the central peak persists. Its integrated intensity does not, however, follow the predictions of the theory and reveals a strong temperature dependence in the ferroelectric phase and a weaker dependence in the paraphase. It is shown that the thermal activation law describes well the temperature dependence of the intensity of the central peak. An interpretation is proposed according to which the intensity of order parameter fluctuations is related to the activation barrier whose height is proportional to the deviation from the phase transition temperature.     

硅晶格微区结构特征与Raman谱线宽

本文主要讨论半导体器件的晶格质量问题，检测评估工艺过程对基质晶格所造成的损伤程度。文中得出Ｒａｍａｎ线宽与格位扭曲角＜θ＞＿（ｒｍｓ）的关系，一个良好的器件，Ｒａｍａｎ谱半高宽应控制在３一６ｃｍ￣（－１）以内，对应的＜θ＞ｒｍｓ约为１～３