Electrical resistance and magnetoresistance of amorphous alloys Gd67Co33 and Pd80Si20

In search for structural contributions to the low temperature anomaly we report high resolution resistance and magnetoresistance measurements ($\text{0.02}\text{K}\text{? T ? 20}\text{K}$) of amorphous splats of Gd₆₇Co₃₃ and Pd₈₀Si₂₀. For both alloys, the resistivity ?(H = 0, T) has a minimum at T ～ 10 K and increases with decreasing T. The ferromagnetic Gd₆₇Co₃₃ shows a strong negative field dependence of $\text{Δ?}\text{?(0)}$, saturating at H ～ 2T for T = 4.2 K but no measurable change in $\text{??}\text{?}\text{T}$ below 10 K is observed.The diamagnetic Pd₈₀Si₂₀ exhibits a positive field dependent magnetoresistance $\text{[Δ?}\text{?(0)]}\text{(}\text{H}\text{)}$ at low temperatures. Additionally, a field dependent part in $\text{??}\text{?}\text{T}$ is found which is probably due to paramagnetic impurities (～ 1 ppm Fe). However, there is also a field independent contribution in the amorphous state of Pd₈₀Si₂₀, which vanishes after crystallization. We attribute this to non-magnetic scattering induced by the disordered structure.     

Electric and magnetic properties of the synthetic metal-copper subrodanide Cu(SCN)13

The temperature dependence of the resistance and magnetic susceptibility of the copper subrodanide Cu(SCN)_{$\text{1}\text{3}$} samples were measured at the magnetic field up to 7.3 kG and the temperature range 4.2–400 K. The resistance of the pressed pellet samples linearly increases with the temperature increasing and at 100–150 K the ?(T) line slope smoothly changes. The magnetic susceptibility at zero field linearly decreases with decreasing of the temperature, showing unusual exponential field dependence, which is rather strong at the room temperature and disappears at T → 0. It was concluded that a copper subrodanide is a synthetic metal.     

Superconductivity in PdAlx hydrides

Hydrides of PdA$\text{l}$_x alloys prepared by electron beam co-evaporation and subsequent implantation of hydrogen ions are found to exhibit anomalous changes in the superconducting transition temperature with increasing A$\text{l}$ content. At large hydrogen concentrations, H/Pd ～ 1, the addition of aluminum increases T_c only slightly (from 8.1 to 8.6°K for 7 at. % A$\text{l}$), and then yields an abrupt decrease in T_c at 10% A$\text{l}$. This behavior is in sharp contrast to PdAg_xH_y alloys which exhibit an enhanced T_c ～ 16°K at relatively low silver content.     

Temperature dependence of the spectral width in the intermediate valence compound CeAl3

We report measurements of the quasi-elastic spectral component of the compound CeAl₃ in the temperature range 60 mK < T < 125 K. At low temperatures, below ? 1 K, the quasi-elastic spectral width is effectively constant but increases as T^{$\text{1}\text{2}$} at higher temperatures. One possible interpretation of this behaviour is that it reflects the transformation of the f electrons from a Fermi liquid at low temperatures to a classical liquid at higher temperatures.     

Electrical transport properties of a quasi-one-dimensional Nb3Te4 single crystal

The electrical resistance of a linear chain metal Nb₃Te₄ were measured from 1.3 to 320 K. The residual resistance ratio $\text{R(300}\text{K}\text{)}\text{R(4.2}\text{K}\text{)}$ is about 3. Nb₃Te₄ shows an anomaly in the resistivity vs temperature at about 80 K, suggesting an occurrence of a charge-density-wave transition. The transverse and longitudinal magnetoresistance at 4.2 K are proportional to the magnetic field in the range of 2–58 kOe. In the superconducting region close to the transition temperature T_c, the critical magnetic field H_c2 is proportional to δT=T_c?T. The angular dependence of H_c2 fits well with the fluxoid model of the Ginzburg-Landau theory. The ratio of the critical fields parallel and perpendicular to the chain direction is 4.8.     

Magnetic phase transitions in the 1D ising antiferromagnet CsCoCl3

We report on Raman scattering from the magnons in CsCoCl₃ with particular emphasis on two magnetic phase transitions occurring at T_N = 20.82 K and at 8 K. The T → 0 magnon spectrum is fitted by a $\text{S =}\text{1}\text{2}$ anisotropic Heisenberg model. With a simple cluster model we can explain the temperature behaviour of the magnon frequencies and intensities. The physics of the 8 K phase transition is also discussed.     

Investigation of the diffusion of hydrogen in palladium by means of spin-lattice relaxation in the rotating frame

The diffusion of hydrogen in palladium $\text{(}\text{H}\text{Pd}\text{= 0.73)}$ has been investigated from 170 to 300K by measurements of the proton spin-lattice relaxation time in the rotating frame, T_1?. In contrast to previous T₁ measurements, a single activation energy of 0.225 eV is obtained, in agreement with the high-temperature T₁ data and with internal friction experiments at about 120K.     

On the frequency dependence of the transition temperature in spin glasses

For the first time, the frequency dependence of T_f (temperature of the maximum of the a.c. susceptibility of spin-glasses) is shown to obey a Fulcher law $\text{τ = τ}{}_{\mathrm{o}}\text{exp}\text{[}\text{E}{}_{\mathrm{a}}\text{k(}\text{T}{}_{\mathrm{f}}\text{?}\text{T}{}_{\mathrm{f}}\text{)}\text{]}$. This is observed as well in the case of dilute alloys (or R.K.K.Y. spin-glasses : $\text{Cu}$Mn, $\text{Au}$Fe, …) as for frustrated systems (Eu_1?xGd_xS, Eu_xSr_1?xS …). For R.K.K.Y. spin-glasses, only in the case of a very small amplitude, V_o of the R.K.K.Y. interaction, this time dependence approaches an Arrhenius law. In the case of “frustrated” spin-glasses the concentration is the main parameter to determine the kind of frequency dependence of T_f. These properties are evidence for a glass-like phase transition in spin-glasses. The scaling of the frequency dependence of T_f with V_o is justified for R.K.K.Y. spin-glasses from present data.     

Spin-glass behaviour of [La,Gd]B6 and [La,Dy]B6 alloys

Electrical resistance and absolute thermoelectric power measurements have been made in the temperature range between 2 and 30 K on a few polycrystalline specimens of [L$\text{a}$,Gd]B₆ and [L$\text{a}$,Dy]B₆ with different concentrations of rare earth ions. The resistance of these alloys varies as $\text{～ T}{}^{\mathrm{<mtext>3</mtext><mtext>2</mtext>}}$ which is characteristic of spin glasses at low temperature. The thermoelectric power of all specimens but one, shows a broad positive peak in the lower part of the temperature range and becomes negative at higher temperatures, a feature that is typical of a spin glass to paramagnetic phase transition. The exceptional specimen has a large Gd concentration and its thermoelectric power remains positive to higher temperatures than would be expected for a spin glass.     

The superconducting transition temperature of bulk samples of the niobium-germanium A15-phase after implantation of Ge,Si, O and Ar ions

Bulk material of Nb₃ (Ge_0.8Nb_0.2) with A15 structure and a superconducting transition temperature T_c of 6.5 K has been implanted with Ge, Si, Ar and O ions and subsequently annealed at high temperatures. After annealing between 700 and 750°C the Ge implanted samples showed a strong increase in T_c up to 16.2 K. With Si ions only a T_c of 13 K was obtained, with Ar and O ions T_c remained below 9 K. From X-ray measurements carried out on high T_c Ge implanted samples it could be concluded that the implanted surface layer grows up to a high degree epitaxially on the single crystallites of the bulk material. The lattice constant $\text{a}$₀ of the implanted film was reduced by 0.02 Å with respect to the bulk material. This reduction in $\text{a}$₀ is stronger than expected from the transition temperature of the implanted surface layer.     

Giant kondo resistivity in (La, Ce) B6

The electrical resistivity of the system $\text{(}\text{La}\text{, Ce)B}{}_6$ has been measured in the temperature range 0.04–300 K. The alloys show a Kondo minimum at about 20 K and a strong increase of the resistivity with decreasing temperature. The low temperature increase of the resistivity due to the Kondo effect of a sample containing 1, 2 at.% is about half as large as the room temperature resistivity of LaB₆. The Kondo temperature T_K of $\text{(}\text{La}\text{, Ce)B}{}_6$ was found to be 1.1 ± 0.2 K by comparison of the experimental results with theoretical predictions of the resistance anomaly associated with the formation of the spin-compensated state.     

Pressure dependence of the metal-semiconductor transition in TaS3

TaS₃ exhibits the metal-semiconductor transition at 218 K due to the Peierls instability. The electrical resistance was measured under pressure. It was found that both the transition temperature, Tp, and the activation energy at T=0 K, △(0), decrease with pressure at the rates of $\text{dTp}\text{dP}\text{?-1.3}\text{K}\text{kbar}$ and $\text{d△(0)}\text{dP}\text{?-4}\text{K}\text{kbar}$, respectively, while the ratio, $\text{△ (0)}\text{Tp}$, is independent of pressure.     

Fluctuation enhanced diamagnetic susceptibility below Tc

The effect of fluctuating Cooper pairs on the diamagnetic susceptibility of dirty superconducting thin films is investigated, for temperature T < T_c. The susceptibility decreases with the decrease in temperature, approaching $\text{?}\text{1}\text{4}\text{π}$ at T = 0°K and remains finite at T = T_c.     

Ferroelectric lithium tantalate—III. Temperature dependence of the structure in the ferroelectric phase and the para-electric structure at 940°K

The neutron scattering from a single crystal of LiTaO₃ (Curie temperature 907°K) has been measured at 760, 820, 885 and 940°K, and has been remeasured at 298°K. Least squares structural refinement of the five data sets shows that as the temperature approaches T_c the oxygen atom approaches the position $\text{x,}\text{1}\text{3}\text{,}\text{1}\text{12}$, with respect to Ta at the origin, in space group R3c. The temperature variation of the oxygen y- and z-coordinates is very similar to that of the spontaneous polarization. The lithium atom position below T_c remains essentially invariant as a function of temperature. At T_c, the oxygen atom occupies the position $\text{x,}\text{1}\text{3}\text{,}\text{1}\text{12}$, the lithium atom becomes disordered and distributed over the positions $\text{00z}\text{and}\text{0, 0,}\text{1}\text{2}\text{-z}$, and the tan alum atom becomes located at an inversion center, in space group $\text{R}\text{3}\text{c}$. The lithium atom sites above T_c lie 0.374 Å on either side of the oxygen atom plane at $\text{z =}\text{1}\text{4}$.     

NMR study of one-dimensional ionic conductor with hollandite-type structure. II. Frequency dependence of spin-lattice relaxation time of 27Al

Frequency dependence of spin-lattice relaxation time T₁ of ²⁷Al in one-dimensional K⁺ ion conductor, K-Al-priderite, was measured at 45 K in the frequency range from 10.1 MHz to 55 MHz. It is found that T₁ is proportional to ω^1.49±0.05 and agrres well with the $\text{ω}{}^{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}$ dependence derived by the continuum diffusion model. The intrinsic activation energy is determined to be 0.058 eV by doubling the slope E_NMR=0.029 eV of the d(ln T₁)/dT curve in the low temperature region. The frequency dependence of T₁ in the high temperature region measured in the frequency range from 11.5 MHz to 20.8 MHz shows a tendency that the frequency dependence becomes smaller than the $\text{ω}{}^{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}$ dependence as temperature is raised above 450 K.     

High pressure effect on the electrical properties of NiS2

A semiconductor-metal transition in the electrical resistance of NiS₂, which has been suggested to be a Mott transition, is observed with decreasing temperature under pressure up to 44 kbar. The transition temperature increases with pressure with a slope of $\text{dT}\text{dP}\text{= 6 ± 1 K/kbar}$. The activation energy in a semiconducting region is found to decrease with increasing pressure and to vanish at about 46 kbar. The critical pressure and temperature are predicted to be 46 ± 2 kbar and 350 ± 20 K.     

The cooperative Jahn-Teller effect in uranium (4+) hydroxy-sulphate

The magnetic susceptibility measurements of orthorhombic U(OH)₂SO₄ within the temperature range 4.2–300 K have revealed a magnetic anomaly at T_D = 21 K associated with crystallographic transition induced by the cooperative Jahn-Teller effect. Above 21 K the magnetic susceptibility of the uranium (4+) ion corresponds to the electronic ground doublet ${}_{\mathrm{¡}}\text{M}{}_{\mathrm{J}}\text{= ± 2〉}$ confirming thus the antiprismatic symmetry (D_4d) of the crystal field at the uranium site. Below T_D the system of two singlets ($\text{1}\text{√2}$)|2〉 ± ($\text{1}\text{√2}$)|$\text{2}$〉 separated by δ(T) is the ground state of the uranium ion.     

Electrical conductivity in amorphous Si(O or H)-Au films

SiO films obtained by sputtering in an ArO mixture with an oxygen partial pressure less than 3% are similar to a-Si films: the resistivity is proportional to exp (T₀/T)^{$\text{1}\text{4}$} and T₀ increases with oxygen content and decreases with increasing Au concentration (? 3.7 at.%). On the other hand, above an oxygen partial pressure of 5% one obtains insulating amorphous SiO₂ films. Conductivity appears in such films for Au? 13 at.% (? the percolation threshold) and then the resistivity is proportional to exp (T₀/T)^{$\text{1}\text{2}$}. The same behavior is observed when oxygen is replaced by hydrogen.     

Magnetostriction of antiferromagnetic FeGe2

The anisotropic magnetostriction of FeGe₂ is measured for magnetic field along the [1 0 0] and [1 1 0] axes at temperature 4.2 K and along [1 0 0] from 77 to 300 K. The behaviour is consistent with spin reorientation in the basal plane. The saturation magnetostriction and the characteristic field required to produce saturation decrease with increasing temperature and approach zero at the lower transition temperature, $\text{T}{}_{\mathrm{K}}\text{? 265}$ K. This suggests that the spins flip from the basal plane into the direction of the tetragonal [0 0 1] axis at T_K.