Electric-field dependence of dielectric properties of sol-gel derived Ba(Zr0.2Ti0.8)O3 ceramics

The effect of a dc bias field on the diffuse phase transition and nonlinear dielectric properties of sol-gel derived Ba(Zr_0.2Ti_0.8)O₃ (BZT) ceramics are investigated. Diffuse phase transitions were observed in BZT ceramics and the Curie–Weiss exponent (CWE) was γ∼2.0. The dielectric constant versus temperature characteristics and the γ in the modified Curie–Weiss law, ε ⁻¹=ε _m ⁻¹[1+(T−T _m ) ^γ /C₁](1≤γ≤2), as a function of the dc bias field was obtained for BZT ceramics. The results indicated that γ is a function of dc bias field, and the γ value decreased from 2.04 to 1.73 with dc bias field increasing from 0 to 20 kV/cm. The dielectric constant decreases with increasing dc bias field, indicating a field-induced phase transition. The dc bias field has a strong effect on the position of the dielectric peak and affects the magnitude of the dielectric properties over a rather wide temperature range. The peak temperature of the dielectric loss does not coincide with the dielectric peak and an obvious minimum value for the dielectric loss at the temperature of the dielectric peaks is observed. At room temperature, 300 K, the high tunability (K=80%), the low loss tangent (≈0.01) and the large FOM (74), clearly imply that these ceramics are promising materials for tunable capacitor-device applications.     

Magnetoelectric effect in cobalt ferrite-barium titanate composites and their electrical properties

CoFe₂O₄-BaTiO₃ composites were prepared using conventional ceramic double sintering process with various compositions. Presence of two phases in the composites was confirmed using X-ray diffraction. The dc resistivity and thermoemf as a function of temperature in the temperature range 300 K to 600 K were measured. Variation of dielectric constant (ɛ′) with frequency in the range 100 Hz to 1 MHz and also with temperature at a fixed frequency of 1 kHz was studied. The ac conductivity was derived from dielectric constant (ɛ′) and loss tangent (tan δ). The nature of conduction is discussed on the basis of small polaron hopping model. The static value of magnetoelectric conversion factor has been studied as a function of magnetic field.     

KLiSO4单晶的电学性质

我们证实了KLiSO₄为Li离子导体。通过测定样品中的电位分布,确定其载流子为间隙Li离子和Li空位。其电流弛豫在一定时域内遵从负幂次衰减规律。与之对应,在一定频域内存在与频率成负幂次关系的介电色散。在相变温度附近,本底电流、直流电导率和表观介电常数除发生跃变外还出现一个尖锐的小峰。此峰只有在变温速率较慢时才能观察到,表明该相变具有弛豫过程。 关键词：     

Conductivity and dielectric constant of the polymeric solid electrolyte, (PEO)8NH4SO3CF3, in the 100 Hz to 1010 Hz range

Frequency dependent conductivity and dielectric constant of crystalline and amorphous phases of the polymeric solid electrolyte-(PEO)₈NH₄SO₃CF₃ were studied in the frequency range from dc to 37 GHz. The complex permittivity variation with frequency conforms to the dynamic percolation model.     

Plasma resonance in granular silver films deposited on rough surfaces of NaCl and KCl single crystals

Granular silver films deposited on rough NaCl and KCl single-crystal surfaces exhibit, besides the low-frequency plasma-resonance band induced by the light-wave field and the field generated by the grain dipoles, a second, high-frequency plasma-resonance band, which is excited only by the light-wave field at the frequency ω₀ of the natural electron vibrations in the grains. The dielectric constant due to interband transitions was calculated from the known plasma frequency and the dielectric constant of the medium surrounding thegrains, the plasma frequency ω_p of the granular films, and the measured frequency of the maximum of surface plasmon vibrations in solid films. The results obtained agree with the data quoted by other authors.     

Pinning of charge density waves by irradiation induced defects in orthorhombic TaS3

Effects of electron irradiation induced damage on dc conductivity, threshold field and complex dielectric constant at 9 GHz are investigated in a wide temperature range. Whereas the single particle gap in the low temperature phase is not influenced by irradiation, transport properties associated with collective excitation of charge density waves (CDW) are sensitive to the presence of new pinning centres. The results are discussed in the framework of the semiclassical model of Grüner, Zawadowski and Chaikin. The pinning frequency determined from the threshold field agrees well with that of calculated from the complex dielectric constant.     

Low frequency dielectric relaxation in lightly doped VO2 single crystals

The relative effects of intrinsic and extrinsic defects on the dielectric relaxation of VO₂ crystals have been investigated by measurement of the dielectric parameters of undoped crystals and crystals doped with Ti, Cr and Al. Measurements have been made in the temperature range 77–250 K and the frequency range 50–100 kHz. The dielectric data is described by a Cole-Cole distribution function with a distribution parameter α ? 0.45 which decreases with increasing temperature. However, the distribution of activation energies g(E) derived from α is almost independent of temperature. The overall dielectric relaxation behaviour is determined primarily by the intrinsic defect structure of VO₂, and the effect of impurities is observed only in changes in the low frequency limiting (static) value of the dielectric constant. The same transport mechanism is found to determine the dc conductivity and the dielectric relaxation and evidence is presented that the dielectric relaxation is of dipolar origin.     

Effect of external fields on the memory effect of the incommensurate phase in the ferroelectric-semiconductor TlGaSe<Subscript>2</Subscript>

The effect of external fields (dc electric field, light illumination) on the memory effect of the incommensurate phase in the ferroelectric-semiconductor TlGaSe₂ is studied using the measured dielectric constant. The results obtained are discussed. It is shown for the first time that the effect of external fields on the anomaly related to the memory effect in TlGaSe₂ can be reduced to the following universal empirical rule: when a sample is held for many hours at a constant temperature T ₀ in the temperature range of the incommensurate phase in a dc electric field, the deflection amplitude in the low-temperature part of the anomaly in the temperature dependence of the relative change in the dielectric constant Δ?/? increases (the deflection in the high-temperature part of the Δ?/? anomaly disappears) as compared to this segment in the dependence obtained during isothermal annealing of this sample at the same temperature without an electric field. The crystal remembers its thermal history at a temperature that is several kelvins higher than T ₀. Light illumination increases the deflection amplitude in the high-temperature part of the Δ?/?(T) anomaly and shifts the temperature at which the crystal remembers its thermal history toward lower temperatures with respect to T ₀.     

强电场作用下反铁电锆钛酸铅的介电行为研究

采用电滞回线方法和偏置直流电场中叠加小交变电场方法研究了锆钛酸铅反铁电陶瓷材料在强电场作用下的介电行为.测量结果显示，锆钛酸铅反铁电材料的介电常数随外加电场强度呈非线性变化，在反铁电 铁电转变的电场区间形成介电峰.表征极化强度随电场强度变化率的微分介电常数εd峰值出现在反铁电 铁电转换电场强度处，最高达到41000.随着偏置电场增加反铁电向铁电体转变过程中，小信号介电常数εc减小；在电场降低铁电回复成反铁电过程中，小信号介电常数εc增大，小信号介电常数εc峰先于微分介电常数εd峰出现.根据电场作用下反铁电 关键词： 锆钛酸铅反铁电陶瓷 介电行为 强电场条件     

由BaTiO3晶体结构相变时的介电特性研究其电场作用下的偶极子偏转路径

在不同频率和偏置电场下测量了BaTiO₃晶体从三方相到正交相再到四方相相变过程中的介电温谱.基于BaTiO₃晶体在电场作用下的偶极子偏转假设和介电特性实验结果,提出BaTiO₃各结构相在电场作用下的偶极子偏转路径可以由其相邻相的介电常数随温度的变化特性表现出来.推断出各结构相的偶极子偏转路径,以及偏置电场对偶极子偏转路径的影响. 关键词： 3晶体')" href="#">BaTiO₃晶体 介电特性 结构相变 偶极子偏转路径     

Magnetic and dielectric properties of Ni0.8Co0.1Cu0.1Fe2O4+PZT composites

Magnetoelectric composites of Ni_0.8Co_0.1Cu_0.1Fe₂O₄ and Lead Zirconate Titanate (PZT) were prepared by using conventional ceramic method. The measured values of saturation magnetization (M_s) and magnetic moments (μ_B) are in accordance with the volume fraction of ferrite content in the composite. The dielectric constant of the composites decreases with frequency. The plots of dielectric constant () against temperature (T) show a peak at their respective transition temperatures. The ME output was measured by varying dc bias magnetic field. A large ME output signal of 776 mV/cm was observed for 35% ferrite +65% ferroelectric composite. The magnetoelectric (ME) response is found to be dependent on the content of ferrite phase.     

Influence of Zn/Co ratio on dielectric behavior of Na<Subscript>2</Subscript>Zn<Subscript>1 ‐ x</Subscript>Co<Subscript>x</Subscript>P<Subscript>2</Subscript>O<Subscript>7</Subscript> glasses

A series of zinc phosphate glass doped with cobalt Na₂Zn_(1???x)Co_xP₂O₇ (x = 0, 1, 2 and 5 mol%) was synthesized. These glasses were characterized by both infrared and large broadband dielectric spectroscopy. Infrared spectra indicate the increase of Zn/Co ratio creates defect in phosphate network due to the depolymeration of phosphate anions. The dc conductivity increases and activation energy decreases with the amount of cobalt ions in the glass network. The impedance measurements reveal that the total conductivity follows Jonscher’s power law. The dielectric constant and dielectric loss increased with the temperature and decreased with the frequency whatever the cobalt proportion.     

Fe-Ni-BaTiO3复合材料的介电行为及其机理研究

利用金属铁、镍(Fe与Ni保持mol比为22∶78不变)与钛酸钡复合，在保护气氛下成功烧结制备了高介电常数Fe-Ni-BaTiO₃复合陶瓷材料，并研究了该复合材料的电导和介电性能及其物理机理.分析结果表明，由于渗流效应，随着陶瓷中金属含量的增加，材料经历了绝缘体—导体突变.同时，在渗流阈值附近，材料的介电常数有了极大的提高.当金属体积含量为0.23时，即在绝缘体向导体转变的渗流阈值附近，复合材料的介电常数达到了22000，为同条件下制备的纯钛酸钡陶瓷体介电常数的12倍，同时材料的介电 关键词： 3')" href="#">Fe-Ni-BaTiO₃ 渗流理论 介电性能 Maxwell-Wagner效应     

Field and frequency-dependent dielectric constant of quasi-one-dimensional semiconductors

The “conducting box” polarization model proposed by the present author and Belyantsev [4] which explains successfully the value and the frequency dependence of the giant dielectric constant of the one-dimensional organic semiconductor Me φ₃ As(TCNQ)₂, predicts that the dielectric constant drops in the high-electric-field region. The typical electric field strength is of the order of 20 V cm^?1.     

直流偏置电场下BaTiO３基陶瓷介电常数非线性机理的研究

采用传统固相法制备了Ba_0.6Sr_0.4TiO_３(BST)和BaZr< sub>xTi_１-xO_３(x=0.25，0.3，0.35，0.4)（ＢＺＴ）陶瓷 ，并对其在直流偏置电场下的介电常数非线性行为进行了系统、详细的研究.结果表明，基 于Devonshire的宏观相变理论(phenomenological theory)提出的公式ε_r(app) ε_r(0)=1［1+αε^{３_{r(0)E２ ］1/3和ε(E)=ε1－ε2E2+ε3E4，均可定量地解释BST体系顺电相的介电常数非线性行为，其中εr (app)表示材料在电场下的介电常数，εr(0)表示不加电场即静态下材料 的介电常数，α是非谐性因子，E表示电场强度，ε(E)表示材料在电场下的介电常数，ε１，ε２，ε３分别表示线性、非线性和高阶介电常数. 而对于处于铁电相和居里温度附近的BST体系，则需要考虑铁电畴对介电常数非线性的贡献 ，这种贡献随着外加直流偏置电场强度的增大逐步减小.对于弛豫铁电体BZT体系，即使处于 顺电相，也必须考虑由极性微区的冻结与合并引起的介电常数的下降，极性微区对介电常数 非线性的贡献随着电场强度和温度的上升而有所下降. 关键词： BST x}Ti_１-xO_３')" href="#">BaZr_xTi_１-xO_３ 可调性 介电 常数非线性 直流偏置电场}     

Effect of Y2O3 doping on the electrical transport properties of Sr2MnNiFe12O22 Y-type hexaferrite

Y₂O₃ doped Y-type composite hexa-ferrites Sr₂MnNiFe₁₂O₂₂ + xY₂O₃ (x = 0 wt%, 1 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%) were synthesized successfully using sol-gel auto combustion technique. X-ray diffraction analysis reveals Y-type hexagonal structure with few traces of secondary phases. The decrease in grain size as a function of Yttrium content is attributed to the fact that Yttrium acts as a grain inhibitor. The DC resistivity was observed to increase with increasing Yttrium-contents due to the unavailability of Fe³⁺ ions at octahedral sites. Activation energy showed that the samples with high resistivity have high value of activation energy and vice versa. Permittivity decreases with the increase of frequency following Maxwell Wagner Model. In addition, the doped samples exhibit very low dielectric constant and low loss tangent in frequency range 20 Hz–1 MHz. The sample x = 5 wt% exhibit the lowest value of dielectric constant. The variation in imaginary part of dielectric constant and loss tangent with frequency show normal dielectric behavior for all the samples. The frequency dependent ac conductivity increases with increase in frequency and decrease with Y₂O₃ doping. These characteristics may be suitable for their potential applications in electromagnetic attenuation materials and microwave devices. The conductivity mechanism so determined was hopping mechanism. The dc resistivity of the doped ferrites measured in our case is about 10¹⁰ Ω-cm that meets the requirement for fabrication of components by electroplating.     

Local ionic motion in the superionic conductor Li3N

Anisotropic dielectric behavior of the superionic conductor lithium nitride (Li₃N) is reported for low temperature where the dc ionic conductivity can be neglected (T<17oK). For E ⊥ c the static dielectric constant followed a Langevin-Debye (ε ∝ 1/T) type law from 170 to 80K which changed to a temperature independent value below 40K. Debye relaxations were measured between 10 and 50K in the frequency range 10Hz to 1MHz. The observed properties are discussed in terms of a locally restricted ionic motion in shallow potentials. Different types of potentials are considered and an overdamped oscillator model is proposed.     

Dc-bias-field-induced dielectric relaxation and ac conduction in CaCu3Ti4O12 ceramics

The dielectric relaxation and ac conduction of CaCu₃Ti₄O₁₂ (CCTO) ceramics were investigated at different temperatures under a dc bias. The dc bias gives rise to space charge accumulation, i.e. an electrode response, resulting in the significant increase of dielectric permittivity and dielectric loss tangent. Two Debye-like relaxations, arising from electrode and grain boundary responses, are present at low frequency with an increase of the dc bias. The electrode and grain boundary relaxations are distinguished according to the impedance spectroscopy and the frequency-dependent ac conductivity. The relaxation times of electrode and grain boundary relaxation are 0.955 ms and 0.026 ms, respectively, with a dc bias of 10 V at 328 K.     

Critical dielectric relaxation of highly deuterated betaine arsenate at microwave frequencies

The dielectric behavior of highly deuterated betaine arsenate in the frequency range up to 11 GHz is described by a Cole-Davidson relaxation. The characteristic dynamics show a critical slowing down near the para-antiferroelectric phase transition. The temperature dependence of the dielectric constant is analyzed in terms of a pseudo-one-dimensional Ising model. Evidence is given for a dependence of antiferroelectric coupling on deuteration which can explain the change from a ferro- to an antiferroelectric ordering on deuteration. Measurements of the dielectric relaxation under a dc bias field parallel to the critical axis elucidate the unusual phase transition behavior at low temperatures. A multicritical point appears in theE-T-phase diagram. Frustration effects due to competing ferro- and antiferroelectric interactions are not seen.     

Electronic processes in oxide glassy semiconductors and thin-film structures based on them

The physical nature of electronic processes in oxide glassy semiconductors (OGS) based on V₂O₅ is discussed on the basis of the theory of the small radius polaron (SRP). The most important parameters of the process of charge transfer by polarons are determined from an analysis of the temperature dependence of the static conductivity by mathematical modeling employing general theoretical expressions. A model of coupled SRP, presuming that they are localized by the Coulomb field of the charged defect centers, is proposed for describing the complex of data on the effects of a strong electric field and dielectric relaxation. On the basis of the model expressions describing the dependence of the current density and dielectric constant on the dc electric field strength and also a relation determining the dielectric relaxation time for the given model are obtained. The results of studies of the electric properties of OGS, modified by additions of a second transition-metal oxide, are discussed also.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 18–33, June, 1987.