Spectroscopic and structural proprieties of LiAr and LiAr<Subscript>2</Subscript> molecules

We determined and tried to understand the spectroscopic and structural properties of small LiAr and LiAr₂ molecules within a simple model considering LiAr as a result of interaction between a valence electron and a LiAr⁺ molecular ion. Potential energy curves, spectroscopic constants, and vibrational levels corresponding to the Li(2s, 2p, 3s, and 3p)+Ar dissociation are reported for the LiAr molecule. The depth of the potential well for the X ²Σ⁺ ground state is found to be 50 cm⁻¹ (the corresponding experimental value is (42.5±1.2) cm⁻1 [1]). R _e is determined to be 9.36 a.u. (the experimental value is 9.24 a.u.). For the first excited state A, R _e = 4.97 a.u. and D _e = 993cm ⁻¹ (the corresponding experimental values are 4.68 a.u. and (925−40) cm⁻¹, respectively [1]). The spacing between the vibrational levels for the ground and first excited states is in very good agreement with the experiment. For the ground state, the difference between our results and the data of the most recent experiment is about 1 cm⁻¹. The model has been extended to study the LiAr₂ molecule in two forms (linear and triangular). We have determined the potential energy surfaces of the states dissociating to Li(2s, 2p)+Ar₂ and thus found the triangular form to be more stable as compared to the linear one. We have also calculated the transition energy between the ground state and first excited states of this molecule. The emission spectrum of the Li(2s)+Ar₂→Li(2p)+Ar₂ transition in both forms redshifts as compared to the Li(2s)→Li(2p) atomic transition.     

Spin-orbit effects in the ground X2Π state and two low-lying excited valence states B2Π and L′2Φ for NO

The potential energy curves and spectroscopic constants B _e , ω _e , ω _e χ _e , α _e , D _e of the six Ω states (X ²Π_1/2, ? 3/2, B ²Π_1/2, ? 3/2 and L ^′2Φ_{5/2,   7/2}) of the NO radical molecule were calculated using spin-orbit multi-configuration quasi-degenerate perturbation theory (SO-MCQDPT). The spin-orbit coupling effect was considered via the state interaction approach with the full Breit-Pauli Hamiltonian. The spin-orbit splitting energy between the X ²Π_1/2 and X ²Π_3/2 states of the NO radical is 129.61 cm^-1, which agrees reasonably well with the experimental value of 123.13 cm^-1. For the B ²Π_{1/2,   3/2} states, the spin-orbit coupling (SOC) splitting energy is 35.99 cm^-1, the corresponding experimental value is 31.7 cm^-1. The SOC splitting value of the L ^′2Φ_{5/2,   7/2} states was calculated to be 103.2 cm^-1. The spectroscopic constants R _e , ω _e , ω _e χ _e , B _e , α _e , D _e are in reasonable agreement with available experimental and theoretical data for the six Ω states.     

The role of anion vacancy migration in lead halide photolysis

From the electrical conductivity of meltgrown Pb₂NaI single crystals for the first time mobility of the iodide ion vacancies along the c-axis is calculated (temperature region 340–540 K). It is shown that the transition from the colour centre mode (CCM) to the print-out mode (POM) of the photolysis of Pb₂ (X = Cl, Br, I) occurs when the anion vacancy mobility in PbCl₂ and PbBr₂ exceeds the value 1.0 × 10^?8cm²V^?1sec^?1, and in PbI₂ the value 8.1 × 10^?8cm²V^?1sec^?1.     

Fourier Transform Emission Spectroscopy of the FΣ-XΣ System of RuN

Emission spectra of RuN have been recorded at high resolution in the region 12 000-35 000 cm⁻¹ using a Fourier transform spectrometer. The molecules were excited in a ruthenium hollow cathode lamp in the presence of about 2.5 Torr of Ne and 5 m Torr of N₂. New bands with origins near 17 758.1, 18 866.4, 19 800.4 and 20 721.5 cm⁻¹ have been assigned as the 0-1, 0-0, 1-0, and 2-0 bands of a new ²Σ⁺-²Σ⁺ system with the lower state as the ground state. This transition has been labeled as F²Σ⁺-X²Σ⁺, with the F²Σ⁺ state arising from the 1σ²2σ²1π⁴1δ⁴4σ¹ configuration. A rotational analysis of these bands has been carried out and spectroscopic constants have been extracted. The principal equilibrium constants for the ground state of RuN are ΔG(1/2)″=1108.3235(22) cm⁻¹, B_e″=0.5545023(42) cm⁻¹, α_e″=0.0034468(57) cm⁻¹, r_e″=1.5714269(60) Å, while the equilibrium constants for the excited state are ω_e′=946.8471(40) cm⁻¹, ω_ex_e′=6.4229(14) cm⁻¹, B_e′=0.50085(21) cm⁻¹, α_e′=0.00375(10) cm⁻¹, r_e′=1.65345(34) Å. This transition is analogous to the E²Σ⁺-X²Σ⁺ system of RhC (W. J. Balfour et al., J. Mol. Spectrosc.198, 393 (1999)).     

Accurate potential energy function and spectroscopic study of the X^2∑＋, A^2П and B^2∑＋ states of the CP radical

This paper calculates the equilibrium internuclear separations, the harmonic frequencies and the potential energy curves of the X^2∑＋, A^2П and B^2∑＋ states of the CP radical by the highly accurate valence internally contracted multireference configuration interaction method with correlation-consistent basis sets （aug-cc-pV6Z for C atom and aug-cc-pVQZ for P atom）. The potential energy curves are all fitted with the analytic potential energy function by the least-square fitting. Employing the analytic potential energy function, we determine the spectroscopic constants （Be, αe and ωeχe） of these states. For the X2∑＋ state, the obtained values of De, Be, αe, ωeχe, Re and ωe are 5.4831 eV, 0.792119 cm-1, 0.005521 cm-1, 6.89653 cm-1, 0.15683 nm, 12535.11 cm-1, respectively. For the A2H state, the present values of De, Be,αe, ωeχe, Re and We are 4.586 eV, 0.703333 cm-1, 0.005458 cm-1, 6.03398 cm-1, 0.16613 nm, 1057.89 cm-1, respectively. For the B2E＋ state, the present values of De, Be, αe, ωeχe, Re and We are 3.506 eV, 0.677561 cm-1, 0.00603298 cm-1, 5.68809 cm-1, 0.1696 nm, 822.554 cm-1, respectively. For these states, the vibrational states with the rotational quantum number J equals zero （J = 0） are studied by solving the radial nuclear Schr6dinger equation using the Numerov method. For each vibrational state, the vibrational level, the classical turning points, the rotational inertial and the centrifugal distortion constants are calculated. Comparison is made with recent theoretical and experimental results.     

Solution‐Based Phototransformation of C60 Nanorods: Towards Improved Electronic Devices

A modified liquid–liquid interface precipitation synthesis of C₆₀ nanorods, effects and opportunities following an in situ photochemical transformation in the liquid state, and an electronic characterization using a field‐effect transistor (FET) geometry are reported. The nanorods feature a high aspect ratio of ≈10³ and a notably small average diameter of 172 nm. Interestingly, it is found that a decreased nanorod diameter appears to correlate with distinctly improved electronic properties, and an average electron mobility of 0.30 cm² V^?1 s^?1, as measured in a FET geometry, is reported for as‐grown nanorods, with the peak value being an impressive 1.0 cm² V^?1 s^?1. A photoexposure using green laser light (λ = 532 nm) is demonstrated to result in the formation of a polymer‐C₆₀ shell encapsulating a monomer‐C₆₀ bulk; such photo‐transformed nanorods exhibit an electron mobility of 4.7 × 10^?3 cm² V^?1 s^?1. It is notable that the utilized FET geometry only probes the polymer‐C₆₀ nanorod surface shell, and that the monomer‐C₆₀ bulk is anticipated to exhibit a higher mobility. Importantly, photoexposed nanorods can be conveniently processed as a stabile dispersion in common hydrophobic solvents, and this finding is attributed to the insoluble character of the polymer‐C₆₀ shell.     

AsO+同位素离子X2∑+和A2∏电子态的多参考组态相互作用方法研究

采用包含Davidson修正多参考组态相互作用(MRCI)方法结合价态范围内的最大相关一致基As/aug-cc-pV5Z和O/aug-cc-pV6Z, 计算了AsO⁺ (X²∑⁺)和AsO⁺(A²∏)的势能曲线. 利用AsO⁺离子的势能曲线在同位素质量修正的基础上, 拟合出了同位素离子⁷⁵As¹⁶O⁺和⁷⁵As¹⁸O⁺的两个电子态光谱常数. 对于X²∑⁺态的主要同位素离子⁷⁵As¹⁶O⁺, 其光谱常数R_e, ω_e, ω_ex_e, B_e和α_e分别为 0.15770 nm, 1091.07 cm^-1, 5.02017 cm^-1, 0.514826 cm^-1和0.003123 cm^-1; 对于A²∏态的主要同位素离子⁷⁵As¹⁶O⁺, 其T_e, R_e, ω_e, ω_ex_e, B_e和α_e分别为5.248 eV, 0.16982 nm, 776.848 cm^-1, 6.71941 cm^-1, 0.443385 cm^-1和0.003948 cm^-1. 这些数据与已有的实验结果均符合很好. 通过求解核运动的径向薛定谔方程, 找到了J=0时AsO⁺(X²∑⁺)和AsO⁺(A²∏)的前20个振动态. 对于每一振动态, 还分别计算了它的振动能级、转动惯量及离心畸变常数, 并进行了同位素质量修正, 得到各同位素离子的分子常数. 这些结果与已有的实验值非常一致. 本文对于同位素离子⁷⁵As¹⁶O⁺(X¹∑⁺), ⁷⁵As¹⁸O⁺(X¹∑⁺), ⁷⁵As¹⁶O⁺(A¹∏)和⁷⁵As¹⁶O⁺(A¹∏)的光谱常数和分子常数属首次报导.     

The effect of Cu substitution on the A1g mode of La0.7Sr0.3MnO3 manganites

We report on the first Raman data of Cu substituted La_1−ySr_yMn_1−xCu_xO₃ (0≤x≤0.10 and 0.17≤y≤0.3, accordingly in order to have the same Mn⁴⁺/[Mn⁴⁺+Mn³⁺] ratio), collected in the frequency range 100-900 cm⁻¹ and at room temperature, with parallel (e_i∥e_s) and crossed (e_i⊥e_s) polarizations of the incident (e_i) and scattered (e_s) light. Spectra were fitted with a Drude-Lorentz model, and peaks at 190-220 and 430 cm⁻¹, together with two broad structures centered at near 500 and 670 cm⁻¹, have been found. We also have observed that the A_1g mode is substantially shifted with increasing Cu substitution. The A_1g phonon shift is a linear function of the tolerance factor t and the rhombohedral angle α_r, thus following the structural changes of the MnO₆ octahedra in the system.     

The 2880-Å emission spectrum of I2: Ion-pair states near 47 000 cm−1

An emission system of I₂ in Ar in the region 2830–2890 Å is examined under high resolution and found to display fine violet-degraded band structure. This system is interpreted as a charge-transfer transition originating from an ion-pair state near 47 000 cm^?1 and terminating on a weakly bound state which dissociates to two ground-state atoms. This interpretation is supported by spectral simulations employing a bound-free model. The transition is tentatively assigned as $\text{0}{}_{\mathrm{<mtext>g</mtext>}}{}^{\mathrm{?}}\text{→ 2431 0}{}_{\mathrm{<mtext>u</mtext>}}{}^{\mathrm{?}}\text{(}{}^3\text{Π}\text{)}$, according to which the excited state becomes the fourth ion-pair state near 47 000 cm^?1 to be experimentally characterized, and the lower state is the last component of the lowest ³Π state to be identified. The vibrational assignments include about 45 bands in ¹²⁷I₂ and ¹²⁹I₂, spanning v′ = 0–4 and v″ = 6–19, but with the numbering of the lower state remaining uncertain by several units. The main spectroscopic constants for the excited state are T_e = 47 070 cm^?1, ?_e = 105.7 cm^?1, ?_ex_e = 0.49 cm^?1. The spectral simulations place the lower state's potential curve 34 650 cm^?1 below the upper state at R = R′_e, with slope ?850 cm^?1/Å. For our “best” numbering of the lower state, ?_e = 20.5 cm^?1, ?_ex_e = 0.29 cm^?1, T_e = 12 190 cm^?1, and D_e = 360 cm^?1.     

Ab initioRelativistic CI Calculations of the Spectroscopic Constants and Transition Probabilities for the Low-Lying States of the BiOH/HBiO Isomers

Spin-orbit MRD-CI calculations have been carried out for the potential energy surfaces of the seven lowest-lying electronic states of the BiOH molecule by employing relativistic effective core potentials. The HBiO isomer is found to be 4020 cm⁻¹less stable because of its inability to form multiple Bi–O bands. A bent³A″ BiOH ground state is predicted, which is split into all three of its components by spin-orbit coupling. The calculatedX̃₂A″–X̃₁A′ splitting is computed to be 5217 cm⁻¹, but the correspondingX̃₃–X̃₂value is only 29 cm⁻¹. Finket al.have observed spectral bands which appear with aT_evalue of 6200 cm⁻¹which are likely caused by BiOH. Since calculations at the same level for BiF underestimate the observedX̃₂–X̃₁spin–orbit splitting by 650 cm⁻¹, it appears that the present calculations are consistent with this experimental assignment. A vibrational progression with a 500 cm⁻¹frequency is also observed and this result fits in well with the computed Bi–O stretch ω_evalue of 527 cm⁻¹. The calculations also find a relatively large¹Δ splitting (600 cm⁻¹) because of the bent BiOH geometry, with comparatively strong transitions to theX̃₁A′ ground state, and it is suggested that the experimental BiOH assignment can be confirmed on this basis. Much stronger transitions to the¹Δ component should also be observed in emission in the 10 000 cm⁻¹range.     

Charge exchange and excitation cross sections at collisions of alpha particles with be-like impurity oxygen ions in a plasma

The charge exchange and excitation cross sections at collisions of alphas with O⁴⁺(1s ²2s ²) impurity atoms in a hot plasma for striking energies E _c varying from 20 keV to 2 MeV are determined for the first time. The cross sections are calculated using the method of close-coupling equations with 13 singlet four-electron quasi-molecular states taken as a basis. The partial cross sections of charge transfer to the 1s, 2s, and 2p states of a He⁺ ion and for O⁴⁺(1s ²2s ²) → O⁴⁺(1s ²2lnl’) (n = 2, 3) electronic excitation of an oxygen ion are found. The maximal value of the charge exchange total cross section roughly equals 2.2 × 10^?16 cm² at E _c ≈ 0.7 MeV. The excitation total cross section has a maximum of ≈ 7.7 × 10^?16 cm² at E _c ≈ 80 keV for single-electron excitation and ≈6.5 × 10^?16 cm² at E _c ≈ 0.7 MeV for two-electron excitation.     

Transport and equilibrium characteristics of γ-lithium vanadium bronze

The diffusion coefficient of Li⁺ in the γ-lithium vanadium bronze (Li_1+xV₃O₈) has been measured with the long-pulse galvanostatic technique. Values ranging from 1.7×10⁻⁷ cm²s⁻¹, at x=0.3, to 2.2×10⁻⁸ cm²s⁻¹, at x= 1.4, have been measured. The thermodynamic factors, d ln a/d ln c, determined from the OCV/x curve and from voltage relaxation after the current pulse, have a mean value of ∼15. The pseudo two-phase region observed in the OCV/x curve at high Li⁺ concentrations seems attributable to ordering of Li⁺ in specific sites and to alteration of the unit cell. This process is reversible as shown by X-ray diffractometry. Finally, from OCV/t plots at different x, the partial molar entropy of Li⁺ was determined. The values, on account of the large dE(x)/dt measured, are higher than those found for V₆O₁₃ or TiS₂.     

The vibrational numbering and improved constants of the A3Π1u state of I2

The A-X system of I₂ has been recorded in absorption, under conditions of medium resolution, over the region 8000 – 13 400 Å. Bandheads in progressions based on v″ = 6 through 18 have been measured and assigned. A new vibrational numbering for the A state is proposed, which leads to more reliable values for the important constants of the A state: T_e = 10 906 ± 3 cm^?1, D_e = 1641 ± 3 cm^?1, ω_e = 92.5 ± 0.5 cm^?1, ω_ex_e = 1.20 ± 0.08 cm^?1, ω_ey_e = ?0.062 ± 0.006 cm^?1.     

Emission Spectroscopy and Ab Initio Calculations for TaN

The emission spectra of TaN have been investigated in the region 3000-35 000 cm⁻¹ using a Fourier transform spectrometer. The spectra were observed in a tantalum hollow-cathode lamp by discharging a mixture of 1.5 Torr of Ne and about 6 mTorr of N₂. In addition to previously known bands, numerous additional bands were observed and assigned to a number of new transitions. The spectroscopic properties of the low-lying electronic states of TaN were also predicted by ab initio calculations. A ¹Σ⁺ state, with equilibrium constants of B_e=0.457 852 1(48) cm⁻¹, α_e=0.002 235 9(67) cm⁻¹, and R_e=1.683 099 9(88) Å, has been identified as the ground state of TaN based on our experimental observations supported by the ab initio results. The first excited state has been identified as the a³Δ₁ spin component at 2827 cm⁻¹ above the ground state. To higher energies, the states become difficult to assign because of their Hund's case (c) behavior and extensive interactions between the spin components of the electronic terms.     

Galvanomagnetic properties of air-stable and highly conductive potassium-intercalated graphite sheet

Magnetoresistance and Hall coefficient of air-stable potassium-intercalated graphite sheets (hereafter abbreviated as K-PGS) were determined at room temperature. The magnitude of the magnetoresistance and the absolute value of Hall coefficient of K-PGS decreased with increasing potassium content of K-PGS, n_K/n_C. Two-carrier model was used for calculating carrier density and mobility. The electron density increased with increasing n_K/n_C: 3.07×10²⁰ cm⁻³ (n_K/n_C=0.005), 5.67×10²⁰ cm⁻³ (n_K/n_C=0.008) and 6.40×10²⁰ cm⁻³ (n_K/n_C=0.011). The value of the electron density of K-PGS with n_K/n_C=0.011 (nominal composition KC₉₁) was about 80% of the reported value, 7.8×10²⁰ cm⁻³, for KC₄₈ (n_K/n_C=0.021) prepared from HOPG (highly oriented pyrolytic graphite). The mobility decreased with increasing n_K/n_C: 2.11×10³ cm² V⁻¹ s⁻¹ (n_K/n_C=0.005), 1.42×10³ cm² V⁻¹ s⁻¹ (n_K/n_C=0.008) and 1.34×10³ cm² V⁻¹ s⁻¹ (n_K/n_C=0.011). The value of the mobility of K-PGS with n_K/n_C=0.011 was about 60% of the reported value (2300 cm² V⁻¹ s⁻¹) for KC₄₈ prepared from HOPG.     

Hall effect and conductivity in thin films of low temperature chalcocite Cu2S at 20°C as a function of stoichiometry

Thin films of Cu_xS with stoichiometric compositions between Cu_2.000S and Cu_1.995S, i.e. monoclinic chalcocite have been prepared by evaporation of Cu_1.8S and by reactive sputtering deposition from a Cu target in an Ar-H₂S-H₂, atmosphere. The hole concentration c_h and the hole conductivity σ_h have been determined as a function of the composition x of Cu_xS at 20°C using the van der Pauw method for Hall effect and electrical conductivity measurements. From the results the Hall mobility u_h for holes has been calculated. The values for Cu_1.999S are σ_h = 7Ω^?1 cm^?1, c_h = 1.5 × 10¹⁹cm^?3u_h = 3 cm²V^?1sec^?1, those for Cu_1.995S are σ_h=35Ω^?1cm^?1, c_h=1.0 × 10²⁰ cm^?3, u_h=2 cm² V^? sec^?1. Values for intermediate stoichiometries will be reported in the text.     

Theoretical study of anisotropic mobility in ladder-type molecule organic semiconductors

The properties of two ladder-type semiconductors {M1: 2,2′-(2,7-dihexy1-4,9-dihydro-s-indaceno[1,2-b:5,6-b′]dithiophene-4,9-diylidene) dimalononitrile and M2: 2,7-dihexy1-4,9-dihydro-s-indaceno[1,2-b:5,6-b′]dithiophene-4,9-dione} as the n-type and ambipolar organic materials are systematically investigated using the first-principle density functional theory combined with the Marcus–Hush electron transfer theory. It is found that the substitution of M1 induces large changes in its electron-transfer mobility of 1.370 cm² V^?1 s^?1. M2 has both large electron- and hole-transfer mobility of 0.420 and 0.288 cm² V^?1 s^?1, respectively, which indicates that M2 is potentially a high efficient ambipolar organic semiconducting material. Both the M1 and M2 crystals show remarkable anisotropic behavior. A proper design of the n-type and ambipolar organic electronic materials, which may have high mobility performance, is suggested based on the investigated two molecules.     

Scattering mechanisms in (Al, Ga)As/GaAs 2DEG structures

We have prepared a large number of high mobility two-dimensional electron gas (2DEG) structures, with undoped spacer thicknesses ranging from 9 to 3200Å. For samples with 400Å of (Al, Ga)As Si-doped at 1.3×10¹⁸ cm⁻³, there is a peak in the 4K mobility at spacers of 400–800Å, with a maximum value of 2×10⁶ cm² V⁻¹ s⁻¹. Increasing the thickness of the doped (Al, Ga)As to 500Å produced an increase in mobility to 3×10⁶ cm² V⁻¹ s⁻¹ for a 400Å space sample. We have compared these results with published analyses of scattering processes in 2DEG structures, and conclude that a combination of ionised impurity and acoustic phonon scattering gives a qualitative explanation of the behaviour, but that the experimental mobility values are generally higher than those predicted theoretically.     

Field distribution and criterion for bulk-limited and injection-limited current conduction in single layer organic light-emitting devices

A numerical model for current conduction in single layer OLEDs including both injection and bulk effect is proposed. Based upon this model, a nearly linear distribution of the electric field was found, and the slope of the distribution, or the field at the injection electrode (F₀) is dependent on the energy barrier, mobility, trap density and trap depth. F₀ equals the half of the mean field of the device (F_m), which equals the quotient of the bias to the thickness of organic layer, is proposed as the limit for bulk-limited (BL) and injection-limited (IL) conduction. OLEDs with F₀ greater than F_m/2 are considered as IL-conducting, while those with F₀ less than F_m/2 are considered as BL-conducting. It was found that, the state of current conduction is not only determined by the energy barrier at the injection electrode, but also by the mobility, trap density and trap depth of the organic semiconductor. OLEDs with high injection barrier (>0.7 eV), trap density less than 10¹⁹ cm^-3, and reduced trap depth shallower than 5, will be IL-conducting, while those with low energy barrier (<0.2 eV), low carrier mobility (<10^-6 cm²V^-1s^-1), and trap density higher than 10¹⁷ cm^-3, will be BL-conducting. PACS 78.60.Fi; 75.40.Mg; 73.21.Ac     

An investigation of lithium transport properties in V6O13 single crystals

Lithium has been incorporated into single crystals of V₆O₁₃ by coulometric titration in solid state electrochemical cells. A single phase region was identified for Li_xV₆O₁₃ between x=0 and x=0.17 at 120°C. The lithium chemical diffusion coefficient, self-diffusion coefficient, ionic conductivity and partial molar entropy have been estimated at intervals over this composition range in two specific crystallographic directions. The chemical diffusion coefficients were found to be constant in a particular crystal direction with values of 3.5 × 10^-8 cm² s^-1 and 4.9 × 10^-9 cm² s^-1 perpendicular to the (0 1 0) and (0 0 1) planes respectively.