GaN深中心Zn的低温瞬态研究

本文研究了GaN:Zn的低温瞬态过程,同时测量了衰减中的时间分辨光谱,从两者测量的结果得出:2.89eV的光致发光寿命为300ns(2K).实验证实,Zn作为发光中心的同时也引起一些非辐射陷阱.2.89eV的瞬态曲线可分为两部分,在短时范围(1μs)内基本上是指数形式,可归结为导带中光激发的电子和束缚在ZnGa受主上空穴的复合.在长时范围(t>>1μs)内瞬态曲线则偏离了指数规律,相当好地符合Becqureal经验公式.     

Evidence for exciton binding at Ni impurity sites in ZnSe

A broad charge transfer band is observed in the photoluminescence excitation (PLE) spectrum of the 2.5 μ Ni²⁺ luminescence in ZnSe : Ni. This band lies above the highest energy d-d excitation bands and exhibits a ZPL at 1.8163 eV and LO(#38;0lambda;) phonon replicas at higher energy. In contrast, PLE spectra of Co²⁺ luminescence in ZnSe:Co contain only d-d excitation bands. The charge transfer band in ZnSe:Ni is interpreted as evidence for bound exciton formation at the Ni site. The recombination energy of this exciton is transferred efficiently to the excited d-band states of the Ni ion, leading to characteristic Ni²⁺d-d luminescence.     

Low-temperature luminescence and thermally stimulated luminescence of BeO: Mg single crystals

Luminescence and thermally stimulated luminescence (TL) of BeO: Mg crystals are studied at T = 6–380 K. The TL glow curves and the spectra of luminescence (1.2–6.5 eV), luminescence excitation, and reflection (3.7–20 eV) are obtained. It is found that the introduction of an isovalent magnesium impurity into BeO leads to the appearance of three new broad luminescence bands at 6.2–6.3, 4.3–4.4, and 1.9–2.6 eV. The first two are attributed to the radiative annihilation of a relaxed near-impurity (Mg) exciton, the excited state of which is formed as a result of energy transfer by free excitons. The impurity VUV and UV bands are compared with those for the intrinsic luminescence of BeO caused by the radiative annihilation of self-trapped excitons (STE) of two kinds: the band at 6.2–6.3 eV of BeO: Mg is compared with the band at 6.7 eV (STE₁) of BeO, and the band at 4.3–4.4 eV is compared with the band at 4.9 eV (STE²) of BeO. In the visible region, the luminescence spectrum is due to a superposition of intracenter transitions in an impurity complex including a magnesium ion. The manifestation of X-ray-induced luminescence bands at T = 6 K in BeO: Mg indicates their excitation during band-to-band transitions and in recombination processes. The energy characteristics of the impurity states in BeO: Mg are determined; the effect of the isovalent impurity on the fluctuation rearrangement of the BeO: Mg structure in the thermal transformation region of STE₁ → STE₂ is revealed.     

在醋酸纤维素薄膜中四苯基卟吩的零声子线和局域模

测量了酸醋纤维素(cellulose acetate)薄膜中四苯基卟吩(α,β,γ,δ-tetraphenyporphin,即TPP)的吸收光谱。分析了Gauss型的非均匀加宽的零声子线,用Huang-Rhys-Pekar(H-R-P)Wp(S,)函数得到了H-R-P因子S～1.45.Raman散射实验证实了在TPP中有频率大约为1323cm-1振动模的存在,同时也观测到了频率大约为1440cm-1的吡咯C-H弯曲模、1357cm-1的吡咯=C-N拉伸振动模和频率大约为1155cm-1的单取代苯拉伸振动模。     

Luminescence study of alumina nanopowders prepared by various methods

Mixed nanopowders of transition alumina prepared by combustion synthesis and phase pure ultra-porous α-alumina by oxidation method were investigated using low temperature time-resolved cathodoluminescence and photoluminescence spectroscopy under VUV-XUV excitation. In all samples along with the 7.6 eV emission of self-trapped excitons of α-alumina, luminescence bands due to F, F⁺ centres with maxima at 3 and 3.8 eV and other UV–visible luminescence bands of intrinsic and extrinsic origin with varying intensity depending on sample preparation method and thermal treatment were studied. In alumina nanopowders the excitonic excitation peak at ∼9.1 eV near fundamental absorption edge is shifted to the higher energies by 0.15 eV in comparison with the same feature in single crystals. The nanostructure of alumina is responsible for this shift.     

Luminescence and relaxed excited state origin in CsI:Pb crystals

Emission and excitation spectra, luminescence polarization and decay kinetics have been studied for CsI:Pb crystals in the 0.36-300 K temperature range. The origin of the excited states responsible for the optical characteristics has been discussed. It has been concluded that the doublet ≈3.70 eV absorption (excitation) band is caused by the electronic transitions into the Pb²⁺ triplet state split due to the presence of a cation vacancy near a Pb²⁺ ion, while the higher-energy bands are of the charge-transfer origin. Like in CsI:Tl, four emission bands of CsI:Pb have been found to belong to the main luminescence centres. Two emission bands, peaking at 3.1 and 2.6 eV, are suggested to arise from the triplet relaxed excited state of a Pb²⁺ ion. Two visible emission bands, peaking at 2.58 and 2.23 eV, are interpreted as the luminescence of an exciton localized near the Pb²⁺ ion.     

Luminescence spectroscopy of the Bi single and dimer centers in Y3Al5O12:Bi single crystalline films

Luminescence of the Bi³⁺ single and dimer centers in UV and visible ranges is studied in YAG:Bi (0.13 and 0.27 at% of Bi, respectively) single crystalline films (SCFs), grown by liquid phase epitaxy from a Bi₂O₃ flux. The cathodoluminescence spectra, photoluminescence decays, and time-resolved spectra are measured under the excitation by accelerated electrons and synchrotron radiation with energies of 3.7 and 12 eV, respectively. The energy level structure of the Bi³⁺ single and dimer centers was determined. The UV luminescence of YAG:Bi SCF in the bands that peaked at 4.045 and 3.995 eV at 300 K is caused by radiative transitions of Bi³⁺ single and dimer centers, respectively. The excitation spectra of UV luminescence of Bi³⁺ single and dimer centers consist of two dominant bands, peaked at 4.7/4.315 and 5.7/6.15 eV, related to the ¹S₀→³P₁ (A band) and ¹S₀→ ¹P₁ (C-band) transitions of Bi³⁺ ions, respectively. The excitation bands that peaked at 7.0 and 7.09 eV are ascribed to excitons bound with the Bi³⁺ single and dimer centers, respectively. The visible luminescence of YAG:Bi SCF presents superposition of several wide emission bands peaking within the 3.125-2.57 eV range and is ascribed to different types of excitons localized around the Bi³⁺ single and dimer centers. Apart from the above mentioned A and C bands the excitation spectra of visible luminescence contain wide bands at 5.25, 5.93, and 6.85 eV ascribed to the O²⁻→Bi³⁺ and Bi³⁺→Bi⁴⁺ + e charge transfer transition (CTT) in Bi³⁺ single and dimer centers. The observed significant differences in the decay kinetics of visible luminescence under excitation in A and C bands of Bi³⁺ ions, CTT bands, and in the exciton and interband transitions confirm the radiative decay of different types of excitons localized around Bi³⁺ ions in the single and dimer centers.     

The decay of luminescence in natural and silver-doped quartz after X-ray excitation

It is well known that X-rays cause luminescence in quartz. This luminescence consists of two broad bands at 2.5 and 3.3 eV. After X-ray excitation natural quartz has an afterglow. The duration of this afterglow and the intensity of the emitted light show a strong dependence on the temperature of the sample. While the intensity is not so reproducible, the duration of the afterglow has a clear temperature- dependence and can be connected with two electron-traps in the customary band model — one with a depth of 8 meV and the other with 260 meV — using an Arrhenius-plot. If the quartz crystal has been doped with silver by electro-diffusion, additional luminescence bands at 2.2 eV and around 5 eV occurs. The latter broad luminescence band consists of a dominant part with a decay-time of 40 μsec at 4.8 eV and a weak band at 5.4 eV without afterglow. In contrast to natural quartz, the luminescence intensity as well as the decay-time in the silver-doped sample is independent of the temperature in the range 77–300 K. This constant afterglow is associated with partially forbidden transitions in the silver dopant and energy-transfer to the luminescence centres. In the suggested luminescence model, the observed luminescence bands are connected with an energy transition in the silver.     

Cathodoluminescence spectra of diamonds in UHP rocks from the Kokchetav Massif, Kazakhstan

We propose to investigate the diamonds from the Kokchetav Massif, northern Kazakhstan, which is the best example of diamond-eclogite facies metamorphism, using cathodoluminescence (CL) techniques. CL spectra measurements of diamonds from garnet-pyroxene-quartz rocks and dolomitic marbles, made at 80 K, revealed peaks at 2.156, 2.463, and 3.188 eV and a broad band at 2.72-2.80 eV. Panchromatic and monochromatic diamond images analysed by CL reveal concentric zones of variable luminescence. This indicates that the diamond crystals grow during several metamorphic stages under ultra high pressure (UHP) metamorphism conditions. The inhomogeneous broadening and lower 2.156 eV ZPL peak suggests the presence of a higher concentration of defects and stresses in the rim compared to the core.     

Optical spectra of ammonium sulfate in the paraelectric phase

The optical spectra of ammonium sulfate in the paraelectric phase are investigated in the visible and near-IR ranges. The temperature dependences of the parameter σ of the Urbach rule and the degree of depolarization of the luminescence spectrum exhibit a minimum in the temperature range 120–140°C. This minimum can be associated with the rearrangement of the electronic subsystem and the corresponding isostructural transformations of the lattice. In the near-IR range, the absorption spectrum contains two bands with maxima at energies of 0.50 and 0.75 eV. The shape of the bands and the temperature dependence of the conductivity allow us to interpret these bands as the result of dissociation of polarons of a large radius with binding energies of 0.12 and 0.17 eV.     

Pulsed cathodoluminescence of feldspars

We have studied the spectral and kinetic characteristics of pulsed cathodoluminescence of feldspars (albite, microcline, amazonite) in the time range 10⁻⁸–10⁻² sec and the temperature range 28–300 K. We have shown that the bands in the UV region of the spectrum (5.39, 4.35, and 3.75 eV) are due to intrinsic luminescence of the crystals. The ratio of the intensities of these bands characterizes the phase composition of the mineral: in the luminescence spectra of microcline, for all temperatures the 4.35 eV band dominates; in the pulsed cathodoluminescence spectra of albite, the bands at 3.75 eV (at 300 K) and 5.39 eV (at 28 K) dominate. The parameters of the luminescence decay kinetics for the impurity ions Fe³⁺ and Mn²⁺ are more sensitive to local perturbations of the lattice structure than the position of the emission band maximum, and can be an effective indicator of the origin of the mineral. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 3, pp. 339–343, May–June, 2006.     

Photoluminescence studies of nitrogen-doped TiO2 powders prepared by annealing with urea

Photoluminescence and excitation spectra have been investigated for undoped and nitrogen-doped TiO₂ powders at low temperatures. A broad luminescence band peaking at 2.25?eV is observed in the undoped TiO₂ powders. The 2.25?eV luminescence band exhibits a sharp rise from 3.34?eV in the excitation spectrum reflecting the fundamental absorption edge of anatase TiO₂. On the other hand, the N-doped TiO₂ powders obtained by annealing with urea at 350 and 500°C exhibit broad luminescence bands around 2.89 and 2.63?eV, respectively. The excitation spectra for these luminescence bands rise from the lower energy side of the fundamental absorption edge of anatase TiO₂. The origin of the luminescence bands and N-related energy levels formed in the band-gap of TiO₂ are discussed.     

The I.R. photoluminescence emission band in ZnO

Measurements of emission spectra, excitation spectra, intensity dependence of the luminescence, decay of the luminescence, and temperature dependence of the luminescence in ZnO are reported. The results for the emission at 1·70 eV, with the exception of the decay of the luminescence, were found to be similar to those of the yellow (2·02 eV) emission band in ZnO. Both bands could be excited at the band edge and directly, the intensity of both bands was found to be linear with excitation strength and the asymptotic regions of the temperature dependence of both bands could be approximated by exponential functions. It is proposed that the luminescent transition is an electron transition from the edge of the conduction band to a hole trapped in the bulk at 1·60 eV above the edge of the valence band, and that the luminescence center is an unassociated acceptor-like center.     

Spectroscopic characteristics of anionic centers in α-Al<Subscript>2</Subscript>O<Subscript>3</Subscript> crystals bombarded by Cu<Superscript>+</Superscript> and Ti<Superscript>+</Superscript> ions

We have studied the effect of bombardment by Cu⁺ and Ti⁺ ions with energy 30 keV on the optical absorption and luminescence of F centers in oxygen-deficient aluminum oxide. We have shown that in the induced optical absorption spectra there are six components of gaussian shape, which can be assigned to absorption bands of F⁺, F², and F₂⁺ centers. We have established that bombardment of the samples by ion beams has a weak effect on the thermoluminescence parameters in the 3.0 eV and 2.4 eV bands, while in the 3.8 eV luminescence band for F⁺ centers, the thermoluminescent response increases considerably. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 3, pp. 422–424, May–June, 2008.     

Luminescence centers in bismuth-containing oxytungstate ceramics

We have studied the photoexcitation and luminescence spectra of Bi₂WO₆, Y₂WO₆ and Y₂WO₆:Bi ceramics. We used the Alentsev-Fock method to decompose the spectra into elementary components. The emission bands with maximum at 2.93 eV in the luminescence spectrum of Bi₂WO₆, 3.02 eV in the luminescence spectrum of Y₂WO₆, and 2.95 eV in the luminescence spectrum of Y₂WO₆:Bi are assigned to luminescence of self-localized Frenkel excitons. The bands with maxima at 2.35 eV and 1.90 eV in the spectrum of Bi₂WO₆, 2.25 eV and 1.75 eV in the spectrum of Y₂WO₆, and 2.35 eV and 1.85 eV in the spectrum of Y₂WO₆:Bi are connected with oxygen vacancies. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 5, pp. 688–691, September–October, 2007.     

Investigation of luminescence processes in YAG single crystals irradiated by 50 MeV electron beam

Absorption, emission and excitation spectra of 50 MeV electron beam irradiated and as-grown YAG single crystals were studied and compared in the 10–300 K temperature range using time-resolved luminescence spectroscopy under UV/VUV/XUV excitation by synchrotron radiation and cathodoluminescence. The emission spectra consist of intrinsic (excitonic) and defect related non-elementary bands in the VIS/UV range. It is shown that fast electrons create stable F and F⁺ color centers with characteristic emission and absorption bands in the visible/UV range. Induced absorption caused from these defects starts at 4.2 eV. Energy transfer from host to color centers is not an efficient process.     

Luminescence and defects creation under photoexcitation of CsI : Tl crystals in Tl-related absorption bands

Characteristics of the defects created at 4.2 K by the UV-irradiation of CsI : Tl crystals in the Tl⁺-related absorption bands (by photons of 5.8-4.8 eV energy) have been studied. The dependences of the intensities of the thermally stimulated luminescence peaks appearing near 60, 90 and 125 K and of the recombination luminescence photostimulation bands peaking at 2.35, 1.92, 1.33 and 0.89 eV on the irradiation energy and duration, uniaxial stress and thallium concentration have been examined. The mechanisms of the processes, responsible for the appearance of the intense visible (2.55 and 2.25 eV) luminescence of excitons localized near Tl⁺ ions and creation of defects pairs of the type of Tl⁰-V_K and Tl⁺-V_K with various distances between the components, have been discussed.     

On the curve of the density of phonon states for cubic boron nitride (from the results of photoluminescence measurements)

The fine structure of the phonon wing associated with the zero-phonon line (ZPL) of the BN1 center in the cubic boron nitride is analyzed in comparison with the structure of the phonon wing of the luminescence center at 3.188 eV in diamond, the second-order Raman scattering spectrum, and the theoretically calculated densities of phonon states of the c-BN compound. Taking into account the similarity of the structures of the phonon wings in the spectra of the above centers and the previously made assumptions that the structure of the phonon wing of the center at 3.188 eV is due to the specific features in the density of phonon states of diamond, it is assumed that, in the observed density of phonon states of cubic boron nitride, the critical points are represented by the specific features of the structure of the phonon wing associated with the zero-phonon line (at 3.294 eV) of the BN1 luminescence center. In turn, these latter specific features coincide accurate to within 5–10cm^?1 with the theoretically calculated lattice vibrations of the c-BN compound and the experimental data obtained from the second-order Raman spectra.     

Photoluminescence studies of γ-irradiated CaF2:Dy:Pb:Na single crystals

The optical absorption (OA) and photoluminescence (hereafter referred to as luminescence) studies were made on CaF₂:Dy:Pb:Na single crystals (Dy—0.005 at%, Pb—0.188 at% and Na—0.007 at%) before and after γ-irradiation. The unirradiated crystal exhibited a strong OA band around 6.36 eV attributed to the ‘A’ band absorption of Pb²⁺ ions. The γ-irradiated crystal exhibited OA bands around 2.06, 3.28, 3.75 (broad shoulder) and 2.48 eV. The first three bands could be tentatively attributed to M_Na centre when compared with that of the coloured CaF₂:Na. The origin of 2.48 eV band was not explicitly known. Luminescence emission and excitation of Pb²⁺ and Dy³⁺ ions were negligible in the unirradiated crystal. Irradiated crystal exhibited a strong excitation spectrum with overlapping bands, due to different colour centres, in the UV-vis region for the 2.15 eV emission characteristic of Dy³⁺ ion. When excited, the absorbed energy (may be a part) was transferred from a colour centre to nearby Dy³⁺ ions and Dy³⁺ characteristic emission was observed. Exciting the irradiated crystal around 3.28 eV yielded emission at 2.56, 2.15 and 1.76 eV. The first two emission bands were due to Dy³⁺ ions. The excitation spectrum for the 1.76 eV emission showed two prominent bands around 2.02 and 3.08 eV and hence the emission was attributed to the M_Na centre. The luminescence mechanism was described.     

纳米ZnO薄膜的光致发光性质

利用溶胶－凝胶法制备了纳米ZnO薄膜,室温下测量了样品的光致发光谱(PL)、吸收谱(ABS)、X射线衍射谱(XRD)．X射线衍射(XRD)的结果表明：纳米ZnO薄膜呈多晶状态,具有六角纤锌矿晶体结构和良好的C轴取向．观察到二个荧光发射带,中心波长分别位于395 nm的紫带、524 nm的绿带和450 nm附近的蓝带．证实了纳米ZnO薄膜绿光可见发射带来自氧空位(VO)形成的浅施主能级和锌空位(VZn)形成的浅受主能级之间的复合;450 nm附近的蓝带来自电子从VO的浅施主能级到价带顶或锌填隙(Zni) 到价带顶或导带底到VZn的浅受主能级的复合．