Orientation dependence of electrical properties of 0.96Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>-0.04BaTiO<Subscript>3</Subscript> lead-free piezoelectric single crystal

In this paper, a single crystal of 0.96Na_0.5Bi_0.5TiO₃-0.04BaTiO₃ with dimensions of Φ 30×10 mm was grown by the top-seeded-solution growth method. X-ray powder diffraction results show that the as-grown crystal possesses the rhombohedral perovskite-type structure. The dielectric, piezoelectric and electrical conductivity properties were systematically investigated with 〈001〉, 〈110〉 and 〈111〉 oriented crystal samples. The room-temperature dielectric constants for the 〈001〉, 〈110〉 and 〈111〉 oriented crystal samples are found to be 650, 740 and 400 at 1 kHz. The (T _m, ε _m) values of the dielectric temperature spectra are almost independent of the crystal orientations; they are (306°C, 3718), (305°C, 3613) and (307°C, 3600) at 1 kHz for the 〈001〉, 〈110〉 and 〈111〉 oriented crystal. The optimum poling conditions were obtained by investigating the piezoelectric constants d ₃₃ as a function of poling temperature and poling electric field. For the 〈001〉 and 〈110〉 crystal samples, the maximum d ₃₃ values of 146 and 117 pC/N are obtained when a poling electric field of 3.5 kV/mm and a poling temperature of 80°C were applied during the poling process. The as-grown 0.96Na_0.5Bi_0.5TiO₃-0.04BaTiO₃ crystal possesses a relatively large dc electrical conductivity, especially at higher temperature, having a value of 1.98×10⁻¹¹ Ω⁻¹⋅m⁻¹ and 3.95×10⁻⁹ Ω⁻¹⋅m⁻¹ at 25°C and 150°C for the 〈001〉 oriented crystal sample.     

Elastic properties of TeO<Subscript>2</Subscript>–B<Subscript>2</Subscript>O<Subscript>3</Subscript>–Ag<Subscript>2</Subscript>O glasses

A series of glasses [(TeO₂) _x (B₂O₃)_1−x ]_1−y [Ag₂O] _y with x = 70 and y = 10, 15, 20, 25 and 30 mol% were synthesised by rapid quenching. Longitudinal and shear ultrasonic velocity were measured at room temperature and at 5 MHz frequency. Elastic properties, Poisson's ratio, microhardness, softening temperature and Debye temperature have been calculated from the measured density and ultrasonic velocity at room temperature. The experimental results indicate that the elastic constants depend upon the composition of the glasses and the role of the Ag₂O inside the glass network is discussed. Estimated parameters based on Makishima–Mackenzie theory and bond compression model were calculated in order to analyse the experimental elastic moduli. Comparison between the experimental elastic moduli data obtained in the study and the calculated theoretically by the mentioned above models has been discussed.     

Effect of electron irradiation on the galvanomagnetic properties of In<Subscript>x</Subscript>Bi<Subscript>2−<Emphasis Type="Italic">x</Emphasis></Subscript>Te<Subscript>3</Subscript> semiconductor single crystals

The effect of 5-MeV electron irradiation of p-In_xBi_2?xTe₃ single crystals (x=0, 0.04, 0.07), performed at 250 K, on the galvanomagnetic properties of the crystals was studied. The irradiation was shown to change the conduction from the p to the n type. Annealing at temperatures of 310–390 K restores the conduction to the p type. The reversal of the conduction type and variation of the carrier concentration can be accounted for by an increase in the concentration of charged point radiation defects produced in In_xBi_2?xTe₃ by irradiation. Electron irradiation of p-type Te single crystals reduces the electrical resistivity without reversing the conduction type. Annealing restores the original properties almost completely.     

Effect of annealing temperature on microstructures and optical properties of Ba<Subscript>0.9</Subscript>Sr<Subscript>0.1</Subscript>TiO<Subscript>3</Subscript> films

Evolution of microstructure and optical property with annealing temperature has been examined for Ba_0.9Sr_0.1TiO₃ films derived from one single precursor solution containing polyethylene glycol polymer. The films sintered below 750°C exhibit a uniform phase structure across the cross-sections and an ordinary optical thin film feature, while the Ba_0.9Sr_0.1TiO₃ films crystallized at 750°C or higher temperature render a lamellar texture consisting of dense and porous Ba_0.9Sr_0.1TiO₃ layers and a good performance as a one-dimensional photonic crystal. The discrepancy in cross-sectional morphology and reflectance property observed in these Ba_0.9Sr_0.1TiO₃ films has been preliminarily explained.     

Temperature dependence of magnetooptic effects in rare-earth magnetic semiconductor γ-Dy<Subscript>2</Subscript>S<Subscript>3</Subscript>

Temperature dependences of the Faraday effect (FE), which is linear in a magnetic field B; of the nonreciprocal linear birefringence (NB) associated with magnetic field-induced spatial dispersion; and of the Cotton-Mouton effect (CME), which is quadratic in a magnetic field B, have been studied in the transmission region of the γ-Dy₂S₃ cubic magnetic semiconductor (T _d symmetry class) at wavelength λ = 633 nm in the temperature range T = 25–294 K. As the temperature is lowered, the magnitudes of the FE and of the two main NB components, α₀₀₁ and α₀₁₁, increase in proportion to the magnetic susceptibility χ. This behavior implies that the magnitude of these effects is determined by the magnetic moment m of the Dy³⁺ ion induced by the magnetic field B. The CME component \(\beta _{001} (k||[1\bar 10],B||[001])\) grows in proportion to the magnetic susceptibility squared, χ²; i.e., β₀₀₁ ～ m². By contrast, the component \(\beta _{111} (k||[1\bar 10],B||[111]))\) exhibits a weaker temperature dependence, which indicates the manifestation of microscopic mechanisms in the CME component β₁₁₁ that differ from those for β₀₀₁.     

Thermoelectric properties and ferromagnetism of diluted magnetic semiconductors Sb<Subscript>2 − <Emphasis Type="Italic">x</Emphasis></Subscript>Cr<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Te<Subscript>3</Subscript>

Thermoelectric properties of single crystals of a new dilute magnetic semiconductor p-Sb_{2 ? x} Cr _x Te₃ are studied in the temperature interval 7–300 K. The temperature dependences of the thermal conductivity are measured. The Seebeck coefficient S is found to increase upon doping with Cr. At low temperatures, a ferromagnetic phase with Curie temperature T _C ≈ 5.8 K exists for a Cr concentration x = 0.0215, its easy magnetization axis being parallel to the crystallographic axis C ₃. At T = 4.2 K, a negative magnetoresistance and anomalous Hall effect are observed; in strong magnetic fields, the Shubnikov-de Haas effect is manifested.     

Temperature dependence of the quenching of N<Subscript>2</Subscript> (C <Superscript>3</Superscript>Π<Subscript>u</Subscript>) by N<Subscript>2</Subscript> (X) and O<Subscript>2</Subscript> (X)

The temperature dependences of the quenching rate constants of the states N₂ (${\rm C} \ {^{3}{ \rm \Pi }_{u}}${\rm C} \ {^{3}{ \rm \Pi }_{u}} v^′=0,1) by N₂ (X) and of the state N₂ (${\rm C} \ {^{3}{ \rm \Pi }_{u}} \ v^{\prime}=0${\rm C} \ {^{3}{ \rm \Pi }_{u}} \ v^{\prime}=0) by O₂ (X) are studied. Time-resolved light emission from the gas was analyzed in the temperature range from 300 K to 210 K keeping the gas at constant density. In case of quenching by N₂ (X), the quenching rate constant for the vibrational level v^′= 0 increases by (13 ±3)% with gas cooling whereas the quenching rate constant for v^′= 1 decreases by (5.0 ±2.5)% in this temperature range. For quenching by O₂ (X), the quenching rate constant decreases by (3 ±2)% with gas cooling. The temperature variation of the N₂ (C ³Π_u v^′=0) emission intensity for pure nitrogen and dry air are calculated using the obtained quenching rate constants and is compared with the experimental data available in the literature.     

AC Conductivity,XRD and transport properties of melt quenched PbI<Subscript>2</Subscript>–Ag<Subscript>2</Subscript>O–Cr<Subscript>2</Subscript>O<Subscript>3</Subscript> system

Composite materials used for electrode and electrolyte materials have been intensely studied in view of their advantages such as higher conductivity and better operational performance compared to their single-phase counterparts. The present work aims at studying the electrical and structural characteristics of a new composite electrolyte namely, (PbI₂) _x  − (Ag₂O–Cr₂O₃)_100−x where x = 5, 10, 15, 20, and 25 mol%, respectively, prepared by the melt quenching technique. The room temperature X-ray diffraction spectra revealed certain crystalline phases in the samples. AC conductivity analysis for all the prepared samples was carried out over the frequency range 1 MHz–20 Hz and in the temperature window 297–468 K. The room temperature conductivity values were calculated to be in the order of 10⁻⁵–10⁻³ Scm⁻¹. An Arrhenius dependence of temperature with conductivity was observed, and the activation energies calculated were found to be in the range 0.27–0.31 eV. Furthermore, the total ionic transport number (t _i) values obtained for all these indicated the ionic nature of this system. Paper presented at the Third International Conference on Ionic Devices (ICID 2006), Chennai, Tamilnadu, India, Dec. 7–9, 2006.     

Role of A-site deficiency in the magneto-transport properties of Pr<Subscript>0.7</Subscript>Sr<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript> relaxed films

The magneto-transport properties of thick relaxed A-site deficient films having the composition Pr Sr_0.3MnO₃ (P_□SMO with the □ symbol for the Pr vacancy) and Pr_0.7Sr MnO₃ (PS_□MO) are studied. A direct comparison with a Pr_0.7Sr_0.3MnO₃ (PSMO)completely relaxed film, deposited under the same growth conditions, shows a reduction of the in-plane parameter a₁₀₀ associated to an enhancement of the out-plane parameter. The strains (bulk strain ε_B and biaxial Jahn-Teller strain ε_J-T) do vary with the nature of the cationic vacancy. For example, an enhancement of ε_B of 9% in the PS_□MO film (Sr deficient) produces a decrease of T_C of 30 K, whereas the Pr deficient P_□SMO film exhibits a large reduction of both ε_B (-16%) and ε_J-T (divided by a factor of 5), which enhances T_C of 12 K, similarly to previous observations on bulk ceramics. With a reduced resistivity (ρ<0.02 Ω cm), the obtained Pr-deficient film, P_□SMO, exhibits the best magneto-transport properties with a decreasing magnetoresistance sensitivity at low field.     

Ferromagnetism in a new dilute magnetic semiconductor Sb<Subscript>2−<Emphasis Type="Italic">x</Emphasis></Subscript>Cr<Subscript>x</Subscript>Te<Subscript>3</Subscript>

Magnetic and galvanomagnetic properties of single crystals of a new dilute magnetic semiconductor p-Sb_2?xCr_xTe₃ (x = 0, 0.0115, 0.0215) are investigated in a temperature range of 1.7–300 K. A ferromagnetic phase with a Curie temperature of T_C ≈ 5.8 (x = 0.0215) and 2.0 K (x = 0.0115) is detected. The easy magnetization axis is parallel to the C₃ crystallographic axis. Analysis of the Shubnikov-de Haas effect observed in these crystals in strong magnetic fields leads to the conclusion that the hole concentration decreases as a result of doping with Cr. Negative magnetoresistance and the anomalous Hall effect are observed in Cr-doped samples at liquid helium temperature.     

“Negative” gap in the spectrum of localized states of (In<Subscript>2</Subscript>O<Subscript>3</Subscript>)<Subscript>0.9</Subscript>(SrO)<Subscript>0.1</Subscript>

The reflection R(?ω), transmission t(?ω), absorption α(?ω), and refraction n(?ω) spectra of polycrystalline In₂O₃–SrO samples with low optical transparency, which contain In₂O₃ and In₂SrO₄ crystallites with In₄SrO_{6 + δ} interlayers, are examined. In the region of small ?ω values, the reflection coefficient decreases as the resistance of samples saturated with oxygen increases. Spectral dependences n(?ω) and α(?ω) are calculated using the classical electrodynamics relations. The results are compared to the data based on the t(?ω) spectra. The calculated absorption spectra are interpreted within the model with an overlap of tails of the density of states in the valence band and in the conduction band. A “negative” gap E _gn in the density of states with a width from–0.12 to–0.47 eV is formed in highly disordered samples in this model. It is demonstrated that the high density of defects and the band of deep acceptor states of strontium in the major matrix In₂O₃ phase are crucial to tailing of the absorption edge and its shift toward lower energies. The direct gap E _gd = 1.3 eV corresponding to the In₂SrO₄ phase is determined. The energy band diagram and the contribution of tunneling, which reduces the threshold energy for interband optical transitions, are discussed.     

Electron diffraction study of various lattice defects in a Bi<Subscript>4</Subscript>Ge<Subscript>3</Subscript>O<Subscript>12</Subscript> crystal

Lattice defects in a scintillation detector made of Bi₄Ge₃O₁₂ (BGO) could severely impact detector efficiency via non-radiative transfer of electron excitation, thus making thorough investigations of these defects highly important. Here we present a combined experimental and theoretical study of two- and three-dimensional defects in a Czochralski-grown BGO crystal. Upon examination by transmission electron microscopy the selected-area electron diffraction (SAED) patterns in two neighboring parts of the specimen reveal different kinds of two- and three-dimensional defects. Three sub-grains misoriented at 2.47° with reference to each other and probable presence of stacking faults lying in {011} planes were observed in the first examined local area. The SAED image taken from an area in the close neighborhood is much more complicated and is explained in terms of the superposition of reflections from: (i) a partially textured GeO₂ second-phase inclusion; (ii) the basic lattice of BGO and (iii) a superlattice-like structure based on the BGO lattice. The atomic structure of such a superlattice-like structure was theoretically modeled and the corresponding simulated SAED patterns were found to be in good agreement with the experimentally observed one.     

Facile fabrication of α-Fe<Subscript>2</Subscript>O<Subscript>3</Subscript>/Ag<Subscript>2</Subscript>S heterojunction with enhanced photoelectrochemical water splitting property

The α-Fe₂O₃/Ag₂S p-n heterojunction has been prepared via a facile room temperature successive ionic layer adsorption and reaction (SILAR) method. The heterojunction exhibits higher photoelectrochemical property compared to bare α-Fe₂O₃. The amount of Ag₂S has a significant effect on the PEC performance, which could be controlled by varying the number of SILAR cycles. The α-Fe₂O₃/Ag₂S p-n heterojunction prepared via 6 cycles of SILAR processes displays the best photoelectrochemical performance, which exhibits 1.8 times enhancement of photocurrent density and 70 mV cathodic shift of onset potential compared to bare α-Fe₂O₃. The improved PEC performance could be attributed to the formation of p-n junction between Ag₂S and α-Fe₂O₃, which not only enhanced the optical absorption ability, but also facilitated the separation efficiency of photogenerated charge carriers and passivized the surface state.     

Effect of process parameters and post-deposition annealing on the microwave dielectric and optical properties of pulsed laser deposited Bi<Subscript>1.5</Subscript>Zn<Subscript>1.0</Subscript>Nb<Subscript>1.5</Subscript>O<Subscript>7</Subscript> thin films

Bismuth Zinc niobate (Bi_1.5Zn_1.0Nb_1.5O₇) thin films were deposited by pulsed laser deposition (PLD) method on fused silica substrates at different oxygen pressures. The structural, microwave dielectric and optical properties of these thin films were systematically studied for both the as-deposited and the annealed films at 600°C. The as-deposited films were all amorphous in nature but crystallized on annealing at 600°C in air. The surface morphology as studied by atomic force microscopy (AFM) reveals ultra-fine grains in the case of as-deposited thin films and cluster grain morphology on annealing. The as-deposited films exhibit refractive index in the range of 2.36–2.53 (at a wavelength of 750 nm) with an optical absorption edge value of 3.30–3.52 eV and a maximum dielectric constant of 11 at 12.15 GHz. On annealing the films at 600°C they crystallize to the cubic pyrochlore structure accompanied by an increase in band gap, refractive index and microwave dielectric constant.     

Piezĭlectric and elastic properties of Sr<Subscript>3</Subscript>NbGa<Subscript>3</Subscript>Si<Subscript>2</Subscript>O<Subscript>14</Subscript> (SNGS) single crystals

The elastic, piezoelectric, and dielectric constants of new piezoelectric single crystals Sr₃NbGa₃Si₂O₁₄ (SNGS) are measured. The elastic moduli C ₁₁ and C ₆₆ and the piezoelectric coefficient e ₁₁ are determined over a wide temperature range. It is demonstrated that the piezoelectric activity of the crystal is retained up to the highest temperatures (900°C).     

Structural properties of composite cathode material LiFePO<Subscript>4</Subscript>–Li<Subscript>3</Subscript>V<Subscript>2</Subscript>(PO<Subscript>4</Subscript>)<Subscript>3</Subscript>

Composite cathode material LiFePO₄–Li₃V₂(PO₄)₃ is synthesized through a chemical reduction and lithiation using FeVO₄·xH₂O as both iron and vanadium sources. The structural properties of LiFePO₄–Li₃V₂(PO₄)₃ are investigated. X-ray diffraction results show the composite material containing olivine type LiFePO₄ and monoclinic Li₃V₂(PO₄)₃ phases. High-resolution transmission electron microscopy and energy-dispersive X-ray spectrometry results indicate that mutual doping effects take place between the LiFePO₄ and Li₃V₂(PO₄)₃ particles with V³⁺ doping the LiFePO₄ while Fe²⁺ dopes the Li₃V₂(PO₄)₃. LiFePO₄–Li₃V₂(PO₄)₃ nanocomposites are formed in the carbon webs. There is no structural compatibility between monoclinic (Li₃V₂(PO₄)₃) and olivine (LiFePO₄) domains in composite material LiFePO₄–Li₃V₂(PO₄)₃.     

Magnetic and magnetoresistive properties of Al<Subscript>2</Subscript>O<Subscript>3</Subscript>–Sr<Subscript>2</Subscript>FeMoO<Subscript>6–δ</Subscript>–Al<Subscript>2</Subscript>O<Subscript>3</Subscript> nanoheterostructures

A method has been developed for fabricating nanoporous matrices based on anodic aluminum oxide for the deposition of ferromagnetic nanoparticles in them. The modes of deposition of strontium ferromolybdate thin films prepared by the ion-plasma method have been worked out, and the magnetic and magnetoresistive properties, structure, and composition of the films have been investigated. It has been revealed that the microstructure and properties of the strontium ferromolybdate films deposited by ionplasma sputtering depend on the deposition rate and the temperature of the substrate. Based on the measurement of the electrical resistivity of nanoheterostructures in a magnetic field, it has been found that the magnetoresistance reaches 14% at T = 15 K and B = 8 T, which is due to the manifestation of tunneling magnetoresistance.     

Optical activity of γ<Subscript>1</Subscript>-(Ga<Subscript>x</Subscript>In<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>)<Subscript>2</Subscript>Se<Subscript>3</Subscript> crystals

The optical activity of uniaxial γ₁-(Ga_xIn_1?x )₂Se₃ crystals (x=0.1, 0.2, 0.3, 0.4) is studied at T=295 and 77 K in the spectral range 0.5–0.8 πm. It is found that the cationic substitution In → Ga leads to a nonlinear increase in the specific rotation of the plane of polarization ρ and the component g ₃₃ of the gyration tensor. It is shown that the gyrotropy of the crystals studied is determined by high-energy transitions whose energy exceeds the energy of the edge transitions and that the gyrotropy observed has a molecular origin.     

Synthesis and characterization of Li<Subscript>3</Subscript>V<Subscript>2</Subscript>(PO<Subscript>4</Subscript>)<Subscript>3</Subscript>·LiMn<Subscript>0.33</Subscript>Fe<Subscript>0.67</Subscript>PO<Subscript>4</Subscript>/C cathode materials

A new polyanionic cathode material, Li₃V₂(PO₄)₃·LiMn_0.33Fe_0.67PO₄/C for lithium-ion batteries, was synthesized using a sol-gel method and with N,N-dimethyl formamide as a dispersion agent. The analysis of electron transmission spectroscopy and X-ray diffraction revealed that the composite contained two phases. The material has high crystallinity with a grain size of 20–50 nm. The valence states of Mn, V, and Fe in the composite were analyzed by X-ray photoelectron spectroscopy. The electrochemical kinetics in Li₃V₂(PO₄)₃ is effectively enhanced by the incorporation of LiMnPO₄ and LiFePO₄, via structure modification and reduced Li diffusion length. The Li₃V₂(PO₄)₃·LiMn_0.33Fe_0.67PO₄/C materials displayed high rate capacity and steady cycle performance with discharge capacity remained 148 mAh g^?1 after 50 cycles at the rate of 0.2C. In particular, the composite exhibited excellent reversible capacities, with the values of 157, 134, 120, 102, and 94 mAh g^?1 at charge/discharge 0.2, 0.5, 1, 2, and 5C rates, respectively.     

Investigation on the effects of addition of SiO<Subscript>2</Subscript> nanoparticles on ionic conductivity,FTIR, and thermal properties of nanocomposite PMMA–LiCF<Subscript>3</Subscript>SO<Subscript>3</Subscript>–SiO<Subscript>2</Subscript>

Composite polymer electrolyte systems composed of poly(methyl methacrylate) (PMMA) as the host polymer, lithium trifluoromethanesulphonate (also known as lithium triflate; LiCF₃SO₃) as dopant salt, and a variety of different concentrations of nano-sized fumed silica (SiO₂) as inorganic filler were studied. The effect upon addition of SiO₂ on the ionic conductivity of the composite polymer electrolytes was investigated, and it was proven that the ionic conductivity had been enhanced. In addition, the interfacial stability also showed improvement. Maximum conductivity was obtained upon addition of 2 wt.% SiO₂. The complexation of PMMA and LiCF₃SO₃ was verified through Fourier transform infrared studies. The thermal stability of the polymer electrolytes was also found to improve after dispersion of inorganic filler. This was proven in the thermogravimetric studies.