The angular magnetothermoelectric power of a charge density wave system

The angular dependence of the magnetothermopower of a charge transfer organic salt α-(ET)(2)KHg(SCN)(4) below (4 K) and above (9 K) the phase transition temperature, T(p) = 8 K, and under fields of 15 T and 25 T, below and above the 'kinkfield', has been studied. We find that for a longitudinal thermoelectric measurement both an interlayer thermopower (the Seebeck effect), S(zz), and a transverse thermopower (the Nernst effect), S(yz), exist in all three different B-T phases (the CDW (0), CDW (x) and metallic states) with large amplitude. Both thermoelectric effects display a resonant-like behavior without a sign reversal at the angles corresponding to angular magnetoresistance oscillation minima and maxima in this compound. The resonant behavior is most evident in the CDW(0) state, indicating a mechanism involving the Fermi surface nesting. Angular dependences reveal different behaviors of the thermopower and Nernst effect in the high magnetic field (CDW(x)) state.     

Crossover from weak localization to Shubnikov-de Haas oscillations in a high-mobility 2D electron gas

We study the magnetoresistance deltarho(xx)(B)/rho(0) of a high-mobility 2D electron gas in the domain of magnetic fields B, intermediate between the weak localization and the Shubnikov-de Haas oscillations, where deltarho(xx)(B)/rho(0) is governed by the interaction effects. Assuming short-range impurity scattering, we demonstrate that in the second order in the interaction parameter lambda a linear B dependence, deltarho(xx)(B)/rho(0) approximately lambda(2)omega(c)/E(F) with a temperature-independent slope, emerges in this domain of B (here omega(c) and E(F) are the cyclotron frequency and the Fermi energy, respectively). Unlike previous mechanisms, the linear magnetoresistance is unrelated to the electron executing the full Larmour circle, but rather originates from the impurity scattering via the B dependence of the phase of the impurity-induced Friedel oscillations.     

Large anisotropic normal-state magnetoresistance in clean MgB2 thin films

We report a large normal-state magnetoresistance with temperature-dependent anisotropy in very clean epitaxial MgB2 thin films (residual resistivity much smaller than 1 microOmega cm) grown by hybrid physical-chemical vapor deposition. The magnetoresistance shows a complex dependence on the orientation of the applied magnetic field, with a large magnetoresistance (Delta(rho)/(rho)0=136%) observed for the field H perpendicular ab plane. The angular dependence changes dramatically as the temperature is increased, and at high temperatures the magnetoresistance maximum changes to H||ab. We attribute the large magnetoresistance and the evolution of its angular dependence with temperature to the multiple bands with different Fermi surface topology in MgB2 and the relative scattering rates of the sigma and pi bands, which vary with temperature due to stronger electron-phonon coupling for the sigma bands.     

Magnetoresistance of a Two-Dimensional TbTe<Subscript>3</Subscript> Conductor in the Sliding Charge-Density Wave Regime

The magnetoresistance of a TbTe₃ two-dimensional conductor with a charge-density wave (CDW) has been measured in a wide temperature range and in magnetic fields of up to 17 T. At temperatures well below the Peierls transition temperature and in high magnetic fields, the magnetoresistance exhibits a linear dependence on the magnetic field caused by the scattering of normal charge carriers by “hot” spots of the Fermi surface. In the sliding CDW regime in low magnetic fields, a qualitative change in the magnetoresistance has been observed associated with the strong scattering of carriers by the sliding CDW.     

Temperature and magnetic-field-enhanced hall slope of a dilute 2D hole system in the ballistic regime

We report the temperature (T) and perpendicular magnetic-field (B) dependence of the Hall resistivity rho(xy)(B) of dilute metallic 2D holes in GaAs over a broad range of temperature (0.02-1.25 K). The low B Hall coefficient, R(H), is found to be enhanced when T decreases. Strong magnetic fields further enhance the slope of rho(xy)(B) at all temperatures studied. Coulomb interaction corrections of a Fermi liquid (FL) in the ballistic regime can not explain the enhancement of rho(xy) which occurs in the same regime as the anomalous metallic longitudinal conductivity. In particular, although the metallic conductivity in 2D systems has been attributed to electron interactions in a FL, these same interactions should reduce, not enhance, the slope of rho(xy)(B) as T decreases and/or B increases.     

Field-induced quantum critical point in CeCoIn5

The resistivity of the heavy-fermion superconductor CeCoIn5 was measured as a function of temperature, down to 25 mK and in magnetic fields of up to 16 T applied perpendicular to the basal plane. With increasing field, we observe a suppression of the non-Fermi liquid behavior, rho approximately T, and the development of a Fermi liquid state, with its characteristic rho=rho(0)+AT2 dependence. The field dependence of the T2 coefficient shows critical behavior with an exponent of 1.37. This is evidence for a field-induced quantum critical point (QCP), occurring at a critical field which coincides, within experimental accuracy, with the superconducting critical field H(c2). We discuss the relation of this field-tuned QCP to a change in the magnetic state, seen as a change in magnetoresistance from positive to negative, at a crossover line that has a common border with the superconducting region below approximately 1 K.     

Electrical transport properties of CuS single crystals

Electrical resistivity, transverse magnetoresistance and thermoelectric power measurements were performed on CuS high quality single crystals in the range 1.2-300 K and under fields of up to 16 T. The zero field resistivity data are well described below 55 K by a quasi-2D model, consistent with a carrier confinement at lower temperatures, before the transition to the superconducting state. The transverse magnetoresistance develops mainly below 30 K and attains values as large as 470% for a 16 T field at 5 K, this behaviour being ascribed to a band effect mechanism, with a possible magnetic field induced DOS change at the Fermi level. The transverse magnetoresistance shows no signs of saturation, following a power law with field Δρ/ρ(0) ∝ H(1.4), suggesting the existence of open orbits for carriers at the Fermi surface. The thermoelectric power shows an unusual temperature dependence, probably as a result of the complex band structure of CuS.     

Dephasing in disordered metals with superconductive grains

The temperature dependence of electron dephasing time tau(phi)(T) is calculated for a disordered metal with a small concentration of superconductive grains. Above the macroscopic superconducting transition line, when electrons in the metal are normal, Andreev reflection from the grains leads to a nearly temperature-independent contribution to the dephasing rate. In a broad temperature range tau(-1)(phi)(T) strongly exceeds the prediction of the classical theory of dephasing in normal disordered conductors, whereas magnetoresistance is dominated (in two dimensions) by the Maki-Tompson correction and is positive.     

Hydrostatic-Pressure-Induced Reentrance of the Metallic State in the κ-(ET)2Hg(SCN)2Cl Quasi-Two-Dimensional Organic Conductor

On cooling below 30 K, the κ-(ET)₂Hg(SCN)₂Cl quasi-two-dimensional organic metal, which is in the quantum spin liquid state at liquid helium temperatures, undergoes a transition to the Mott insulator state. The application of a hydrostatic pressure p = 0.7 kbar stabilizes the metallic state and makes it possible to study the behavior of the interlayer magnetoresistance at liquid helium temperatures. The field dependence of the magnetoresistance exhibits an unlimited power-law growth, which indicates that the polaron mechanism contributes to the interlayer transport. The spectrum of observed magnetoresistance oscillations corresponds to the Fermi surfaces characteristic of conducting layers with the κ-type structure.

     

Fast proton spin-lattice relaxation time in the rotating frame during the application of time averaged precession frequency

A relatively rapid phase alternation of the effective field in the time averaged precession frequency (TAPF) sequence results in averaging of the proton RF spin-lock field. The spin-locking of the proton magnetization becomes less efficient and thus shortens T(1rho)(H), the proton spin-lattice relaxation time in the rotating frame. The relaxation time also depends on the ratio of tau(1) and tau(2) intervals i.e. tau(1)/tau(2) and not only on the number of tau(c)=tau(1)+tau(2) blocks, i.e. the number of the phase transients. Experiments are performed on solid samples of ferrocene and glycine and for some time intervals, T(1rho)(H) is shortened by factors of 9-100 compared to the relaxation times obtained in the standard experiment.     

Slow oscillations of magnetoresistance in quasi-two-dimensional metals

Slow oscillations of the interlayer magnetoresistance observed in the layered organic metal beta-(BEDT-TTF)(2)IBr(2) are shown to originate from the slight warping of its Fermi surface rather than from independent small cyclotron orbits. Unlike the usual Shubnikov-de Haas effect, these oscillations are not affected by the temperature smearing of the Fermi distribution and can therefore become dominant at high enough temperatures. We suggest that the slow oscillations are a general feature of clean quasi-two-dimensional metals and discuss possible applications of the phenomenon.     

Fractionalized fermi liquids

In spatial dimensions d>or=2, Kondo lattice models of conduction and local moment electrons can exhibit a fractionalized, nonmagnetic state (FL(*)) with a Fermi surface of sharp electronlike quasiparticles, enclosing a volume quantized by (rho(a)-1)(mod 2), with rho(a) the mean number of all electrons per unit cell of the ground state. Such states have fractionalized excitations linked to the deconfined phase of a gauge theory. Confinement leads to a conventional Fermi liquid state, with a Fermi volume quantized by rho(a)(mod 2), and an intermediate superconducting state for the Z2 gauge case. The FL(*) state permits a second order metamagnetic transition in an applied magnetic field.     

Severe Fermi surface reconstruction at a metamagnetic transition in Ca2-xSrxRuO4 (for 0.2 <or=x<or=0.5)

We report an electrical transport study in Ca2-xSrxRuO4 single crystals at high magnetic fields (B). For x=0.2, the Hall constant Rxy decreases sharply at an anisotropic metamagnetic transition, reaching its value for Sr2RuO4 at high fields. A sharp decrease in the coefficient of the resistivity T2 term and a change in the structure of the angular magnetoresistance oscillations for B rotating in the planes confirms the reconstruction of the Fermi surface. Our observations and local-density-approximation calculations indicate a strong dependence of the Fermi surface on Ca concentration and suggest the coexistence of itinerant and localized electronic states in single layered ruthenates.     

Magnetoresistance of a 2D electron gas caused by electron interactions in the transition from the diffusive to the ballistic regime

On a high-mobility 2D electron gas we have observed, in strong magnetic fields (omega(c)tau>1), a parabolic negative magnetoresistance caused by electron-electron interactions in the regime of k(B)Ttau/ variant Planck's over 2pi approximately 1, which is the transition from the diffusive to the ballistic regime. From the temperature dependence of this magnetoresistance the interaction correction to the conductivity deltasigma(ee)(xx)(T) is obtained in the situation of a long-range fluctuation potential and strong magnetic field. The results are compared with predictions of the new theory of interaction-induced magnetoresistance.     

High-field quasiparticle tunneling in Bi2Sr2CaCu2O(8+delta): negative magnetoresistance in the superconducting state

We report on the c-axis resistivity rho(c)(H) in Bi(2)Sr(2)CaCu(2)O(8+delta) that peaks in quasistatic magnetic fields up to 60 T. By suppressing the Josephson part of the two-channel (Cooper pair/quasiparticle) conductivity sigma(c)(H), we find that the negative slope of rho(c)(H) above the peak is due to quasiparticle tunneling conductivity sigma(q)(H) across the CuO2 layers below H(c2). At high fields (a) sigma(q)(H) grows linearly with H, and (b) rho(c)(T) tends to saturate ( sigma(c) not equal0) as T-->0, consistent with the scattering at the nodes of the d-wave gap. A superlinear sigma(q)(H) marks the normal state above T(c).     

Magnetoresistance of aluminium computed by the path-integral method

The field dependence of the magnetoresistance of aluminium is computed by the path-integral method on the basis of the 4-OPW Fermi surface (FS) model. The published data of electron-phonon relaxation time at 20 K and those of electron-Ag impurity scattering time are introduced. The computed magnetoresistance is highly enhanced by the anisotropy in the relaxation time. The results obtained explain the previously discovered anomalous dependence of the magnetoresistance on temperature and impurity concentration tolerably well.     

Localization length in anderson insulator with Kondo impurities

The localization length, xi, in a two-dimensional Anderson insulator depends on the electron spin scattering rate by magnetic impurities, tau(-1)(s). For antiferromagnetic sign of the exchange, the time tau(s) is itself a function of xi, due to the Kondo correlations. We demonstrate that the unitary regime of localization is impossible when the concentration of magnetic impurities, n(M), is smaller than a critical value, n(c). For n(M)>n(c), the dependence of xi on the dimensionless conductance, g, is reentrant, crossing over to unitary, and back to orthogonal behavior upon increasing g. Sensitivity of Kondo correlations to a weak parallel magnetic field results in a giant parallel magnetoresistance.     

Interplay between disorder and quantum and thermal fluctuations in ferromagnetic alloys: the case of UCu2Si2-xGex

We consider, theoretically and experimentally, the effects of structural disorder, quantum fluctuations, and thermal fluctuations in the magnetic and transport properties of certain ferromagnetic alloys. We study the particular case of UCu2Si2-xGex. The low temperature resistivity, rho(T,x), exhibits Fermi liquid behavior as a function of temperature T for all values of x, which can be interpreted as a result of the magnetic scattering of the conduction electrons from the localized U spins. The residual resistivity, rho(0,x), follows the behavior of a disordered binary alloy. The observed nonmonotonic dependence of the Curie temperature, T(c)(x), with x can be explained within a model of localized spins interacting with an electronic bath. Our results clearly show that the Curie temperature of certain alloys can be enhanced due to the interplay between quantum and thermal fluctuations with disorder.     

Magic angle effects and angular magnetoresistance oscillations as dimensional crossovers

Interference effects between velocity and density of states, which occur as electrons move along open orbits in the extended Brillouin zone in anisotropic conductors, result in a change of wave functions' dimensionality at magic angle (MA) directions of a magnetic field. In particular, these 1D-->2D dimensional crossovers result in the appearance of sharp minima in a resistivity component rho perpendicular (H,alpha), perpendicular to conducting layers. This explains the main qualitative features of MA and angular magnetoresistance oscillations' phenomena observed due to the existence of quasi-one-dimensional sheets of Fermi surface in (TMTSF)2X, (DMET-TSeF)2X, and kappa-(ET)2Cu(NCS)(2) conductors.     

Phosphorus-31 spin-lattice NMR relaxation in bone apatite and its mineral standards

Phosphorus-31 spin-lattice relaxation, both in the laboratory (B(0)=4.7 T) and rotating frame (B(1)=2.2 mT), was studied in the following samples: mineral of whole human bone (samples B1-B6), apatite prepared from bone (BHA), natural brushite (BRU), synthetic hydroxyapatite hydrated (HAh) and calcined (HAc), and synthetic carbonatoapatite of type B (CHA-B) with 9 wt% of CO(3)(2-). The T(1)(P) relaxation time was determined directly using the saturation recovery technique, while the T(1 rho)(P) relaxation time was measured via (1)H-->(31)P CP by incrementing the (31)P spin-lock. In order to avoid an effect of magic-angle spinning (MAS) on CP and relaxation, the experiments were carried out on static samples. The (31)P spin-lattice relaxation was discussed for trabecular and cortical bone tissue from adult subjects in comparison to the synthetic mineral standards. None of the reference materials has matched accurately the relaxation behaviour of the bone mineral. The most striking differences between the examined substances were observed for T(1)(P), which for human bone was sample dependent and appeared in the range 55-100 s, while for HAh, HAc, and CHA-B was 7.2, 10.0, and 25.8 s, respectively. Possible reasons of so large relaxation diversity were discussed. It has been suggested that T(1)(P) of apatites is to some extent dependent on the concentration of the structural hydroxyl groups, and this in turn is controlled by the material crystallinity. It was also found that T(1)(P) decreased on hydration by ca. 30%. For T(1rho)(P), both its magnitude and dependence on the CP contact time gave useful structural information. The dehydrated samples (HAc and BHA) had long T(1 rho)(P) over 250 ms. Those, which contained water, either structural (BRU) or adsorbed on the crystal surface (HAh, CHA-B, and B1-B6), had shorter T(1 rho)(P) below 120 ms. It was concluded that the effect of water on T(1 rho)(P) is much more pronounced than on T(1)(P). The interpretation has involved P-OH groups and adsorbed water, which cover the apatite crystal surface.