Tunneling magnetoresistance of the double spin-filter junctions at nonzero bias

A recent theoretical estimation indicated that the NM/FI/FI/NM double spin-filter junction (DSFJ, here the NM and FI represent the nonmagnetic electrode and the ferromagnetic insulator (semiconductor) spacer, respectively) could have very high tunneling magnetoresistance (TMR) at zero bias. To meet the requirement in research and application of the magnetoresistance devices, we have calculated the dependences of tunneling magnetoresistance of DSFJ on the bias (voltage), the thicknesses of ferromagnetic insulators (semiconductors) and the average barrier height. Our results show that except its very high value, the TMR of DSFJ does not decrease monotonously and rapidly with rising bias, but increase slowly at first and decrease then after having reached a maximum value. This feature is in distinct contrast to the ordinary magnetic tunnel junction FM/NI/FM (FM and NI denote the ferromagnetic electrode and the nonmagnetic insulator (semiconductor) spacer, respectively), and is of benefit to the use of DSFJ as a magnetoresistance device.     

Electrical conductance properties for magnetic tunnel junctions with MgO barriers

We measured inelastic electron tunneling (IET) spectra and conductance for MgO tunneling magnetoresistance (TMR) films to obtain information on the ferromagnetic/barrier layer interface. The IET spectra showed the difference between amorphous and crystalline structures in the barrier. In the magnetic tunnel junction (MTJ) with a crystalline barrier the IET spectra indicated an Mg-O phonon peak at a low bias voltage by measurement with a parallel magnetization configuration. On the other hand, no peak was observed in the MTJ with an amorphous barrier.     

Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers

Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriers are prepared to examine their stability under large current stress. The devices show magnetoresistance ratios of up to 110% and an area resistance product of down to . If a large current is applied, a reversible resistance change is observed, which can be attributed to two different processes during stressing and one relaxation process afterwards. Here, we analyze the time dependence of the resistance and use a simple model to explain the observed behavior. The explanation is further supported by numerical fits to the data in order to quantify the timescales of the involved phenomena.     

Anomalous bias dependence of spin torque in magnetic tunnel junctions

We predict an anomalous bias dependence of the spin transfer torque parallel to the interface, Tparallel, in magnetic tunnel junctions, which can be selectively tuned by the exchange splitting. It may exhibit a sign reversal without a corresponding sign reversal of the bias or even a quadratic bias dependence. We demonstrate that the underlying mechanism is the interplay of spin currents for the ferromagnetic (antiferromagnetic) configurations, which vary linearly (quadratically) with bias, respectively, due to the symmetric (asymmetric) nature of the barrier. The spin transfer torque perpendicular to interface exhibits a quadratic bias dependence.     

Photosensitive tunnel junctions and photosensitive granular films with Te or Se barriers

SnTePb and SnSePb junctions are found to exhibit a photosensitive behavior. A preliminary experiment is performed to prepare a photosensitive granular film in which the interparticle coupling can be controlled by light exposure.     

Enhanced conductance blockade due to Pauli exclusion in tunnel junctions with half-metallic electrodes

A defect-state mediated conductance blockade effect has been studied in magnetic tunnel junctions consisting of La_0.7Sr_0.3MnO₃ (LSMO) electrodes and a SrTiO₃ (STO) barrier. The blockade threshold is an order of magnitude greater than the Coulomb charging energy estimated from the conductance oscillations at low temperature. The blockade voltage decreases with the increase of the temperature or the magnetic field, whereas the Coulomb charging energy washes out at higher temperature but it does not show strong dependence on magnetic field. An explanation is offered in terms of the spin blockade effect due to the combination of the discrete Coulomb charging on the defect state in STO and the half-metallicity of the LSMO electrodes. The result sheds new light on the half-metallic nature of LSMO.     

高磁电阻磁性隧道结的几种微制备方法研究

利用金属掩模法优化了制备磁性隧道结的实验和工艺条件，金属掩模的狭缝宽度为100 μm. 采用4 nm厚的Co₇₅Fe₂₅为铁磁电极和10或08 nm厚的铝氧化物 为势垒膜， 直接制备出了室温隧穿磁电阻（TMR）为30%—48％的磁性隧道结，其结构为Ta(5 nm)/Cu(25 nm)/Ni₇₉Fe₂₁(5 nm)/Ir₂₂Mn₇₈(10 nm)/ Co₇₅Fe₂₅ (4 nm)/Al(08 nm)-O/Co₇₅Fe₂₅(4 nm)/Ni₇₉Fe ₂₁(20 nm)/Ta(5 nm).同时，利用刻槽打孔法和去胶掀离法两种光刻技术并结合Ar离子束刻蚀及化学反应刻 蚀，制备出面积在4 μm×8 μm—20 μm×40 μm、具有室温高TMR和低电阻的高质量磁性 隧道结.300 ℃ 退火前后其室温TMR可分别达到22% 和50%.研究结果表明，采用光刻中的刻 槽打孔或去胶掀离工艺方法制备的小尺寸磁性隧道结，可用于研制磁动态随机存储器和磁读 出头及其他传感器件的磁敏单元. 关键词： 磁性隧道结 隧穿磁电阻 金属掩模法 光刻法     

Heterodyne mixing at 70 GHz with superconductor-insulator-superconductor tunnel junctions

A laboratory heterodyne receiver working at 70 GHz was built up using superconductor-insulator-superconductor tunnel junction as mixing element. Single sideband conversion loss L_C as low as 1.92±0.23 and mixer noise temperature T_M of less than 100 K have been achieved while local oscillator pump power is 4·10^–8W.     

Bias voltage dependence of tunneling anisotropic magnetoresistance in magnetic tunnel junctions with MgO and Al2O3 tunnel barriers

Tunneling anisotropic magnetoresistance (TAMR) is observed in tunnel junctions with transition metal electrodes as the moments are rotated from in-plane to out-of-plane in sufficiently large magnetic fields that the moments are nearly parallel to one another. A complex angular dependence of the tunneling resistance is found with twofold and fourfold components that vary strongly with bias voltage. Distinctly different TAMR behaviors are obtained for devices formed with highly textured crystalline MgO(001) and amorphous Al2O3 tunnel barriers. A tight-binding model shows that a fourfold angular dependence can be explained by the presence of an interface resonant state that affects the transmission of the contributing tunneling states through a spin-orbit interaction.     

Spin-filtering junctions with double ferroelectric barriers

An FS/FE/NS/FE/FS double tunnel junction is suggested to have the ability to inject, modulate and detect the spin-polarized current electrically in a single device, where FS is the ferromagnetic semiconductor electrode, NS is the nonmagnetic semiconductor, and FE the ferroelectric barrier. The spin polarization of the current injected into the NS region can be switched between a highly spin-polarized state and a spin unpolarized state. The high spin polarization may be detected by measuring the tunneling magnetoresistance ratio of the double tunnel junction.     

Noise anomalies in small tunnel junctions at low temperatures

The discreteness of the carrier's energy spectrum in small tunnel junctions is shown to cause the anomalous dependence of noise power on temperature S(ω)∼T^-1 at low temperatures instead of the proportionality predicted by the Nyquist formula. The effect manifest itself in the second order of the expansion in powers of the tunnel barrier transparency.     

Temperature and bias voltage dependence of Co/Pd multilayer-based magnetic tunnel junctions with perpendicular magnetic anisotropy

Temperature- and bias voltage-dependent transport measurements of magnetic tunnel junctions (MTJs) with perpendicularly magnetized Co/Pd electrodes are presented. Magnetization measurements of the Co/Pd multilayers are performed to characterize the electrodes. The effects of the Co layer thickness in the Co/Pd bilayers, the annealing temperature, the Co thickness at the MgO barrier interface, and the number of bilayers on the tunneling magneto resistance (TMR) effect are investigated. TMR-ratios of about 11% at room temperature and 18.5% at 13 K are measured and two well-defined switching fields are observed. The results are compared to measurements of MTJs with Co-Fe-B electrodes and in-plane anisotropy.     

Direct detection at submillimetre wavelengths using superconducting tunnel junctions

Superconducting tunnel-junction direct detectors are considered in some detail. For frequencies below twice that of the gap there is some bias voltage for which the input impedance is real, the responsivity quantum limited, and the dynamic range high. A susperconducting detector saturates for two reasons: intrinsic saturation due to the relative increase in two-photon tunnelling processes, and extrinsic saturation due to the input match changing with bias voltage. The responsivity of a detector with a resistive RF source is least sensitive to bias-voltage changes and has the greatest dynamic range when operating with a sloping load line. In the case of an inductive source, the dynamic range can be higher than the intrinsic saturation rate would suggest. Ideally, superconducting tunnel-junction detectors should be biased in a constant-voltage mode. If the responsivity is to be depressed by no more than a few percent, the photon step should have a height which is no more than one quarter of the total current turn-on at the gap. Superconducting direct detectors can be used to make precise and well-calibrated optical measurements at submillimetre wavelengths.     

DC current singularities in long Josephson tunnel junctions: Approximate solutions of the sine-Gordon equation with loss and bias

We construct approximate analytic solutions of the sine-Gordon equation with loss and bias, which describe the fluxon propagation in long overlap Josephson junctions. By these solutions a qualitative explanation of the main observed features of the DC current singularities can be easily obtained.