单电子晶体管与金属氧化物半导体混合电路构造的一维离散混沌系统研究

基于单电子晶体管与金属氧化物半导体混合结构构造出一种一维离散混沌系统. 研究了单电子晶体管与金属氧化物半导体串联混合结构的电压传输特性,并建立了相应的N型分段线性函数模型. 基于该模型实现了一维离散映射系统,分析了它的一维映射过程、分岔图和Lyapunov指数谱等动力学特性. 最后利用单电子晶体管与金属氧化物半导体混合电路设计出该离散混沌系统的电路结构,仿真验证与理论分析一致. 研究结果表明,利用单电子晶体管与金属氧化物半导体混合结构设计的离散混沌电路不仅结构非常简单,功耗很低, 而且有利于混沌系统的集成和应用.     

Influence of time-periodic potentials on electronic transport in double-well structure

Within the framework of the Floquet theorem, we have investigated single-electron photon-assisted tunneling in a double-well system using the transfer matrix technique. The transmission probability displays satellite peaks on the both sides of main resonance peaks and these satellite peaks originate from emission or absorption photons. The single-electron resonance tunneling can be control through changing applied harmonically potential positions, such as driven potential in wells, in barriers, or in whole double-well system. This advantage should be useful in the optimization of the parameters of a transmission device.     

Radio-frequency single-electron refrigerator

We propose a cyclic refrigeration principle based on mesoscopic electron transport. Synchronous sequential tunneling of electrons in a Coulomb-blockaded device, a normal metal-superconductor single-electron box, results in a cooling power of approximately k(B)T x f at temperature T over a wide range of cycle frequencies f. Electrostatic work, done by the gate voltage source, removes heat from the Coulomb island with an efficiency of approximately k(B)T/Delta, where Delta is the superconducting gap parameter. The performance is not affected significantly by nonidealities, for instance by offset charges. We propose ways of characterizing the system and of its practical implementation.     

Magnetic field dependent magnetization oscillations in two-dimensional quantum electron systems

A simple relationship between amplitudes of magnetization oscillations is presented as result of a single-electron Josephson junction in a two-dimensional quantum electron system with a perpendicular magnetic field.     

Particle-size effects in single-electron tunnel systems

It is seen that in single-electron systems with finite-size particle distributions there is a direct correlation between a given distribution and its single-electron conductance peak spacing. In this paper we discuss the geometry, capacitance, and size distribution of particles in single-electron tunnel systems, the latter two as manifest in their tunneling characteristics.     

纳米结构的制备及单电子器件研究

建立了单电子器件的制备工艺和单电子器件的分析、测量系统,研究了有潜在应用价值的纳米结构加工技术,制备了适合光电集成的多种纳米结构,发展了常规光刻法制备单电子器件的多种技术,其中,在生命科学和信息领域有着广泛应用的“纳米电极对”引起了国内外专家的重视,发展以“纳米电极对”为基础的单电子器件及其应用是我们目前的主要研究方向,目前我们正在探索这种单电子器件在生命芯片、微电子系统集成方面的应用。     

Optical absorption in a semiconductor cylindrical nanolayer

In the effective-mass approximation the single-electron states in a semiconductor cylindrical nanolayer in the regime of strong quantization are considered. The explicit form of the energy spectrum and envelope wave functions of single-electron states is obtained in the case of large and moderate radii of the system. The corresponding absorption bands of dipole and quadrupole optical transitions in the layer are calculated.     

Coulomb blockade under conditions of inelastic tunneling

It is found that single-electron current oscillations in the drain-gate characteristics of a single-electron transistor fabricated by the step-edge cutoff process, as compared to a conventional single-electron transistor, are damped several times slower and do not change their phase by π as the source-drain voltage increases. This is explained by the strong nonlinearity of the current-voltage characteristics of tunnel junctions, which is caused by the inelastic character of tunneling.     

Simulation of single-electron transport processes in thin granulated chromium films

The results of the numerical simulation of the single-electron transport in two-dimensional granulated chromium films at low temperatures are reported. A theoretical model has been developed in which the granulated film is represented as a two-dimensional matrix of conducting metallic granules (islands), which are weakly coupled with each other through slightly transparent tunnel barriers, ensuring the transport of single electrons localized on the islands. The recently measured current-voltage characteristics of submicron rectangular chromium samples have been explained by taking into account the inhomogeneities in the nanometer sizes of the islands and their effective electron temperature depending on the flowing current. A transition from the two-dimensional regime to the quasi-one-dimensional regime of the single-electron transport leading to the experimentally observed hysteresis has been revealed in the simulated system.     

Semiconductor nanocylindrical heterolayer in a radial electrostatic field: The electronic spectrum and optical properties

In the effective-mass approximation the single-electron states in a semiconductor cylindrical nanolayer under the presence of lateral-radial electrical field in the regime of strong quantization are considered. The explicit form of the energy spectrum and envelope wave functions of single-electron states is obtained in the cases of “large” and “moderate” radii of the system. The corresponding absorption characteristics of interband optical transitions in the layer under the presence of radial field are calculated.     

基于库仑阻塞原理的多值存储器

设计了一种基于库仑阻塞原理的新型单电子多值存储器.器件包括两个多隧穿结结构和一个单电子晶体管，其中单电子晶体管起到一个静电计的作用来实现数据的读取.两个隧穿结库仑阻塞区域的大小不同使得器件具有三个稳定的存储状态.利用这个原理可以制备出多值的动态随机存储器和非挥发性的随机存储器.这种低功耗的单电子多值存储器可以实现信息的超高密度存储. 关键词： 库仑阻塞 单电子晶体管     

Effects of single-electron charging in a tunnel structure with a metallic cluster

The effects of single-electron tunnel charging and Coulomb blockade in a cluster structure (molecular transistor) are studied theoretically with allowance for the quantization of the electronic levels in an island electrode. The electronic spectrum is calculated for small spherical and disk-shaped clusters. Under the assumption that the total energy of the system is conserved with inclusion of the contact potential difference, equations are derived for analyzing the current-voltage characteristic. Limitations associated with the Coulomb instability of a cluster and with electron relaxation are introduced into the theory. For single-electron transistors with small gold clusters, the current gap and the asymmetry in its position on the voltage axis are calculated. The current gap is shown to vary nonmonotonically with the cluster size.     

Single-electron transistor with an island formed by several dopant phosphorus atoms

We present the results of an experimental study of electron transport through individual phosphorus dopants implanted into a silicon crystal. We developed an original technique for single-electron transistor fabrication from silicon-on-insulator material with an island formed by single phosphorus atoms. The proposed method is based on well-known CMOS compatible technological processes that are standard in semiconductor electronics and may be used in most research groups. The large Coulomb blockade energy value of the investigated single-electron transistor (～20 meV) allows one to observe single-electron effects in a wide temperature range up to 77 K. We measured and analyzed stability diagrams of fabricated experimental structures. We demonstrated a single-electron transistor with controllable electron transport through two to three phosphorus dopants only.     

A simulator for single-electron tunnel devices and circuits based on simulated annealing

Simulated annealing is proposed as a simulation method for single-electron tunnel devices and circuits. Tunnel junctions, voltage sources and capacitors are used as elements for the construction of single-electron circuits. The simulator is applied successfully to the two-stage tunnel junction inverter circuit. The computation time is practically acceptable when cooling schedule and cooling parameters are appropriately chosen.     

A Coulomb Blockade in a Nanostructure Based on Single Intramolecular Charge Center

A novel technique for the production of metal electrodes of a nanotransistor with a nanogap less than 4 nm between them is developed on the basis of controlling the electromigration of previously suspended nanowires of the system. A method that allows the embedding of a molecule of Rh(III) terpyridine with aurophilic ligands between electrodes is elaborated, as well. The characteristics of electron transport through a system that consists of the specified molecule with a single-atom charge center indicate the correlated (single-electron) tunneling of electrons.     

通过单电子泵实现对单电子运动的控制及其相图分析

介绍了单电子泵的工作原理，讨论了如何利用库仑阻塞和单电子隧穿实现对单电子泵中单个电子运动的控制，从而给出它的相图，并由此得到了单电子泵的一个重要用途，即控制微小电流.指出栅极可能引入的随机电荷对单电子泵的应用并无影响. 关键词： 单电子泵 库仑阻塞 相图     

一种新型的单电子A/D转换器

传统的A/D转换器结构复杂，利用一种改进的V-PADOX工艺可以制成性能均匀的互补的单电子 晶体管，工艺重复性好.用互补SET对结构实现了多阈值周期性传输功能，这可以用来简化A/ D转换电路.提出了一种利用该互补SET对结构实现的新型3位A/D转换器，具有结构简单、速 度快、功耗低等优点. 关键词： 库仑振荡 A/D转换器 互补单电子晶体管结构     

Capture and Dissociative Capture of a Single Electron in the Process of Interaction of Doubly Charged Ions with CO Molecules

Technical Physics - The absolute cross sections of single-electron capture and single-electron capture with dissociation in the interaction between incident He2+, C2+, N2+, and O2+ ions with...     

Influence of linker molecules on charge transport through self-assembled single-nanoparticle devices

We investigate electrical characteristics of single-electron electrode/nanoisland/electrode devices formed by alkanedithiol assisted self-assembly. Contrary to predictions of the orthodox model for double tunnel junction devices, we find a significant ( approximately fivefold) discrepancy in single-electron charging energies determined by Coulomb blockade (CB) voltage thresholds in current-voltage measurements versus those determined by an Arrhenius analysis of conductance in the CB region. The energies do, however, scale with particle sizes, consistent with single-electron charging phenomena. We propose that the discrepancy is caused by a multibarrier junction potential that leads to a voltage divider effect. Temperature and voltage dependent conductance measurements performed outside the blockade region are consistent with this picture. We simulated our data using a suitably modified orthodox model.     

单电子晶体管

由电子束纳米微刻技术制成的单电子晶体管呈现了新的物理现象：单电子隧穿效应和电荷宇称效应．这些发现为创造新型的电子器件开辟了光明前景，包括可以用比最基本电荷ｅ还小的电荷量来调制电流，处理以单电子为单位的电脑数字信息，并且也可发展成高度灵敏的微波探测器．