Temperature Dependence of the Absorption Spectra and Optical Parameters in TGS and Cu2+-Doped TGS Crystals

The effect of temperature on the optical absorption spectra and optical parameters is investigated for pure TGS and TGS doped with Cu²⁺ ions. Absorption measurements cover the range from room temperature to about 355 K in the energy range 3-5.5 eV. The temperature dependence of the band gap E_g(T) reveals an anomaly at the phase transition temperature for both pure and Cu²⁺-doped TGS crystals. In the region of the absorption edge the absorption coefficient is found to display Urbach-rule behaviour. The characteristic Urbach parameters are determined and their temperature dependence is investigated.     

Optical properties of pure and metal ions doped ammonium sulfate single crystals

A study of the optical properties of pure‐and some metal ions doped ammonium sulfate crystals (AS) were made. Optical constants of AS crystals were calculated at room temperature. The optical absorption coefficient (α ) was analyzed and interpreted to be in the allowed direct transition. The introduction of Rb⁺ or Cs⁺ ions gives rise to an intense charge transfer band with a maximum at λ= 310 nm in the optical spectrum. In case of Cr³⁺ ‐doping, the absorption shows a shoulder just before the onset band to band transition. The values of the allowed direct energy gap E_g for undoped and doped crystals were calculated. It was found that E_g values were decreased with metal ions doping. The refractive index, the extinction coefficient and both the real and imaginary parts of the dielectric permittivity were calculated as a function of photon energy. The validity of Cauchy‐Sellimeier equation was checked in the wavelength range 4.9 ‐ 5.6 eV and its parameters were calculated. Applying the Single‐Effective‐Oscillator model, the moments of ε (E ) could be estimated. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Optical Absorption Edge of Mg + Zn: LiNbO3

The optical transmittance of LiNbO₃ single crystal double doped with MgO and ZnO was measured from the ultraviolet to the visible range. The wavelength dependence of the absorption coefficient α and its root α^1/2 (α versus hv and α^1/2 versus hv, respectively) were calculated and the characteristics of the absorption edge were discussed. The energy gaps E_g and E_g of the crystals which correspond to the direct transition and the indirect transition, respectively, and the energy of phonons taking part in the indirect transition were calculated. The effects of dopants Mg and Zn on the optical absorption properties are discussed. It was found that the energy E_g of our sample which was double doped with MgO and ZnO was smaller than that of congruent LN, causing the indirect transition absorption edge to move towards the infrared.     

Piezo-optic properties of TGS crystals doped with <Emphasis Type="Italic">D</Emphasis>-serine

The effect of uniaxial mechanical pressure along the main crystallophysical axes on the principal values of birefringence Δn _i in TGS crystals doped with 5% D-serine is investigated. It is ascertained that the values of Δn _i are rather sensitive to the action of uniaxial stresses. The temperature shift coefficients ?T _c /?σ_m are determined for the phase-transition points. The temperature and spectral dependences of the combined piezo-optic constants π _im ⁰ are calculated. The contribution of the secondary electro-optic effect to the changes in the birefringence and the piezo-optic constants of doped crystals is determined. It is found that the piezooptic constants π ₂₃ ⁰ and π ₁₂ ⁰ have the same values, which indicates a decrease in the anisotropy of the optical indicatrix of doped crystals under the action of uniaxial stress. The optical and deformation contributions to the relaxation effect of piezo-optical birefringence in doped TGS crystals are found.     

Electron irradiation‐induced effects on optical spectra of (NH4)2ZnCl4: x Sr2+ single crystals

The effect of electron‐beam irradiation with different doses on optical constants of (NH₄)₂ZnCl₄: x Sr²⁺ crystals with x=0.000, 0.020, 0.039, 0.087 or 0.144 wt% has been studied. The optical transmission in the energy range 3.4‐6.4 eV was measured hence the absorption coefficient was computed as a frequency function. The absorption coefficient was also calculated as a function of electron‐beam dose. Irradiation with e‐beam did not affect the allowed indirect type of transition responsible for interband transitions of (NH₄)₂ZnCl₄: x Sr²⁺ crystals. Values of the optical energy gap E_g and optical moment E_p for electronic interband transition of unexposed and (NH₄)₂ZnCl₄: x Sr²⁺ crystals after e‐beam exposure were deduced. The area under the absorption band at 5.30 eV was used to evaluate the effect of e‐irradiation on optical parameters of samples with x=0.00, 0.020 or 0.039. A shift in the position and a nonmonotonic change in the intensity of this band with increasing e‐beam dose was observed. Changes in the E_g value were used to evaluate the effect of e‐beam exposure dose on (NH₄)₂ZnCl₄: x Sr²⁺ samples with x=0.087 or 0.144. The obtained results were compared with those obtained for the same crystals after irradiation with different γ‐doses.     

Identification of crystal symmetry in Kramers and non‐Kramers ions by optical absorption: Divalent copper and nickel ions in diamagnetic lattices

The optical absorption spectra of Ni(II) doped hexaimidazole zinc(II) dichloride tetrahydrate (HZDT) and Cu(II) doped magnesium potassium phosphate hexahydrate (MPPH) have been studied at room temperature. Ni(II)/HZDT spectrum consists of three strong and one weak band. The calculated value of Dq is 1051 cm^‐1 and the interelectron repulsion parameters B and C are 854 and 3626 cm^‐1 respectively. The correlation of optical work with EPR has yielded the spin‐orbit interaction parameters λ and ξ as –225 and –450 cm^‐1 respectively. The symmetry around the Ni(II) ion is distorted octahedral, as suggested by EPR results. The estimated percentage covalency of the nickel‐nitrogen bond is around 30%. The optical absorption studies of Cu(II)/MPPH show three bands, which are identified as ²B_1g → ²A_1g, ²B_1g → ²B_2g and ²B_1g → ²E_g transitions. The octahedral field parameter Dq and the tetragonal field parameters have been evaluated from the observed adsorption bands. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Influence of thermoannealing on crystallinity and optical properties of Sb2S3 thin films

Sb₂S₃ thin films are obtained by evaporating of Sb₂S₃ powder onto glass substrates maintained at room temperature under pressure of 2×10^‐5 torr. The composition of the thin films was determined by energy dispersive analysis of X‐ray (EDAX). The effect of thermal annealing in vacuum on the structural properties was studied using X‐ray diffraction (XRD) technique and scanning electron microscopy (SEM). The as‐deposition films were amorphous, while the annealed films have an orthorhombic polycrystalline structure. The optical constants of as‐deposited and annealed Sb₂S₃ thin films were obtained from the analysis of the experimental recorded transmission spectral data over the wavelength range 400‐1400 nm. The transmittance analysis allowed the determination of refractive index as function of wavelength. It was found that the refractive dispersion data obeyed the single oscillator model, from which the dispersion parameters (oscillator energy, E₀, dispersion energy, E_d) were determined. The static refractive index n(0), static dielectric constant, ε_∞, and optical band gap energy, E_g, were also calculated using the values of dispersion parameters. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and Characterization of CdAl2S4 and CdAl2Se4 Single Crystals

Single crystals of CdAl₂S₄ and CdAl₂Se₄ showing high transparency were grown by the chemical vapour transport method. Their composition was proven by microprobe analysis. Structural investigations were done by Rietveld refinements and are in good agreement with known structure data. From transmittance and reflectance measurements the energy of the band gap WBS estimated. Assuming a direct nature of the corresponding optical transition the following values were obtained: E_g = 3.82 eV (RT), E_g = 3.94 eV (85 K) for CdAl₂S₄ and E_g = 2.95 eV (RT), E_g = 3.07 eV (85 K) for CdAl₂Se₄ respectively.     

Spray deposition and characterization of undoped and In‐doped tin disulphide thin films

Undoped and Indium doped tin disulphide (SnS₂) thin films had been deposited onto glass substrates at T_s = 300 °C using spray pyrolysis technique under atmospheric pressure with stannous chloride, indium chloride and thiourea as precursors. The structural, optical and electrical properties of the deposited films were characterized. The XRD pattern revealed that the undoped and doped films had preferred orientation along (002) plane with hexagonal structure. FESEM micrographs had shown that morphologies of the films changed with indium doping. Optical constant such as refractive index (n), extinction coefficient (k), real and imaginary parts of dielectric constants were evaluated from transmittance and reflectance spectra in UV‐Visible spectroscopy. The optical absorption data were used to determine the band gap energy and it was found to be 2.75 eV for undoped and 2.50 eV for indium doped films respectively. The room temperature dark resistivity was found to be 4.545 × 10³ Ω‐cm and 5.406 × 10³ Ω‐cm for undoped and In‐doped films respectively.     

Effect of substrate temperature on the properties of vacuum evaporated indium selenide thin films

Thin films of InSe were obtained by thermal evaporation techniques on glass substrates maintained at various temperatures (T_sb = 30°, 400°C). X‐ray diffraction analysis showed the occurrence of amorphous to polycrystalline transformation in the films deposited at higher substrate temperature (400°C). The polycrystalline films were found to have a hexagonal lattice. Compositions of these films have been characterized by EDAX and the surface analysis by scanning electron microscopy. Optical properties of the films, investigated by using spectrophotometer transmittance spectra in the wavelength range (300 – 1100 nm), were explained in terms of substrate temperatures. Films formed at room temperature showed an optical band gap (E_g^opt) 1.56 eV; where as the films formed at 400°C were found to have a E_g^opt of 1.92 eV. The increase in the value of E_g^opt with T_sb treatment is interpreted in terms of the density of states model as proposed by Mott and Davis. The analysis of current ‐Voltage characteristics, based on space charge limited currents (SCLC) measurements, confirms the exponential decrease of density of states from the conduction band edge towards the Fermi level for both the amorphous and polycrystalline films. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characteristics of HgGaInS4 single crystals

Single crystals of the HgGaInS₄ layered compound were grown by the iodine transport technique. Results of their optical, photoelectric, and radiative properties' study are presented. The band gap and the binding energy of holes on the sensitizing centres were determined to be E_g = 2.41 eV and E_a = 0.2 eV, respectively. A presence of quasi-continuously distributed states was stated which are responsible for the exponential segment of the absorption edge and which take part in the radiative recombination.     

Electrical and optical properties of CuGaTe2

The electrical and optical properties of CuGaTe₂ single crystals were investigated by resistivity and Hall effect measurements in the temperatur range T = 77… 300 K and optical transmission measurements in the temperature range T = 20… 300 K at photon energies hν = 1.15…1.50 eV. All samples were p-type conducting due to shallow acceptors with ionization energies E_A1 ≈︁ 10⁻³ eV and concentrations N_A1 ≈︁ p = (2…4). 10¹⁸ cm⁻³. The absorption spectra could be described by simultaneous consideration of acceptor - to - conduction band transitions with E_A2 = 360 meV and N_A2 ≈︁ 10²² cm⁻³ and valence band - to - conduction band transitions with E_G = 1.24 eV at room temperaure. The temperature coefficient of the fundamental edge is dE_G/dT = −4.0. 10⁻⁴ eV/K. The results are discussed with regard to some general trends found in the Cu-III–VI₂ compounds.     

Dielectric properties of triglycine sulfate crystals with defects at low and infralow frequencies

Dielectric responses of several crystals in ultraweak measuring fields at low and infralow frequencies are compared, namely, of nominally pure, Cr-and Lα-alanine-doped triglycine sulfate (TGS) crystals and TGS + Cr³⁺ crystals irradiated with X-rays. It is shown that dopant-induced bias fields give rise to crystal unipolarity, suppress the domain contribution to their dielectric response, and diffuse the phase transition. It is established that X-ray irradiation of the crystals results in “radiation annealing” of TGS + Cr³⁺ crystals, which increases their permittivity and diminishes diffusion of the phase transition.     

Crystal growth and characterization of Au3+ ion irradiated 2-amino-5-nitropyridinium hydrogen oxalate (2A5NPHO)

2-amino-5-nitropyridinium hydrogen oxalate (2A5NPHO) was grown using slow evaporation and bulk crystal of 2A5NPHO was harvested from Assembled Temperature Reduction (ATR) method. Cut and polished crystal was irradiated using Au³⁺ ion with various fluences. Electronic loss, nuclear energy loss and penetration depth were calculated using SRIM software. It was observed in X- ray pattern that intensity of peak was reduced. Intensity of peak decreased with increase of ion fluencies from 10¹³ ions/cm² to 10¹⁴ ions/cm². Optical properties were measured using UV-Vis spectrometer. The increase of absorption was due to excited electrons which were formed by vacancies and formation of additional defects centres. Energy band gap of irradiated crystals increased with increase of ion fluence. Energy band gap of irradiated crystals were 3.39 eV, 3.42 eV, and 3.4 eV for 10¹³ ions/cm², 5 × 10¹³ ions/cm² and 10¹⁴ ions/cm² respectively and increase of band gap was due to the increase of forbidden gap. Microhardness was calculated using Vicker's Hardness tester. Increase of microhardness in irradiation crystal was due to increase of high density lattice defects produced by Au³⁺ of 10.8 MeV. Electrical property was calculated using dielectric constant. Increase of dielectric constant was due to large polarization which caused by disorderness and rich defects in the crystalline surface. Decrease of intensity peak in fluorescence was due to transition of excited electron to intermediated energy levels from excited state which converted into vibrational energy of lattice atoms (phonon). Morphology of irradiated crystal was seen using scanning electron microscope (SEM). It was observed from the SEM image that surface of crystal was heavily damaged. It was also noticed that the thermal stability of the irradiated single crystal increased with increase of ion fluences. Impedance of irradiated crystal was measured. The bulk resistance and grain boundary resistance also were calculated.     

The amorphous Sb1−xTex system

Amorphous films of Sb_1?xTe_x, where 0.11 ? x ? 0.86, have been prepared by coevaporation. Crystallization temperatures occur near room temperature for all compositions and appear to depend on film thickness. The optical and transport properties have been investigated as a function of temperature. Optical band gaps at room temperature, E_g, ranged between 0.3 and 0.7 eV and decreased non-linearly with temperature. For the composition Sb₂Te₃, E_g ≈ 0.7 eV, in contrast to the semimetallic character of the crystalline form. All compositions were p-type with the Fermi level close to the middle of the gap. The results have been interpreted in terms of the chemical bonding.     

Optical Phonons and Chemical Bonding in TlSbS2, TlSbSe2, and Tl3SbS3 Crystals

The optical phonons at k = 0 of TlSbS₂, TlSbSe₂, and Tl₃SbS₃ have been investigated by infrared reflectivity measurements from 50 to 4000 cm⁻¹ at 300 K. The factor group analysis of vibrational modes of TlSbS₂ and Tl₃SbS₃ crystal lattices has been made. The dielectric constant dispersion for E ‖ a and E ‖ b has been determined by classical dispersion relations. The Szigeti effective charges, the Born dynamic effective charge, and the Tl, Sb, S (Se) relative ion charges were calculated in dependence on the polarization of the incident light.     

Correlation between physical and structural properties of Co doped mixed alkali zinc borate glasses

The physical and structural properties of Co²⁺ doped 20ZnO + xLi₂O + (30 − x)Na₂O + 50B₂O₃ (5 ≤ × ≤ 25) (ZLNB) glasses have been studied and correlated. The physical and structural parameters of all the glasses are evaluated and a non-linear behavior is observed. No sharp peaks are observed in XRD patterns of the glass samples which confirm the amorphous nature. FT-IR spectra of ZLNB glasses reveal diborate units in borate network. The optical absorption spectra suggest the site symmetry of Co²⁺ in the glasses is near octahedral. Crystal field and inter-electronic repulsion parameters are also evaluated. The optical band gap and Urbach energies exhibit the mixed alkali effect. All the samples are found to be strong and stable in structure with low values of Urbach energy which lie between 0.027 eV and 0.039 eV. The correlation between densities and Urbach energies of Co²⁺ doped ZLNB glasses with respect to Li₂O content suggest a changeover conduction mechanism from electronic to ionic, with a diffusivity crossover point at x = 15 mol%.     

Determination of optical parameters of Ga0.75In0.25Se layered crystals

The optical properties of the Ga_0.75In_0.25Se crystals have been investigated by means of transmission and reflection measurements in the wavelength range of 380–1100 nm. The analysis of the results performed at room temperature revealed the presence of optical indirect transtions with band gap energy of 1.89 eV. The variation of the band gap energy as a function of temperature was also studied in the temperature range of 10–300 K. The rate of change of band gap energy (γ = –6.2 × 10^–4 eV/K) and absolute zero value of the band gap (E_gi(0) = 2.01 eV) were reported. The wavelength dependence of the refractive index was analyzed using Wemple and DiDomenico, Sellmeier and Cauchy models to find the oscillator energy, dispersion energy, oscillator strength and zero‐frequency refractive index values. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Semiconducting TiO2SiO2 glasses (II): Optical properties

The refractive index, optical absorption coefficient α and the thermomodulated absorption dα/dT have been measured on 70% TiO₂?30% SiO₂ glasses with up to 8% Ti³⁺. The direct absorption data show intense ligand field absorption at photon energies hν = 1.9 and 3.0 eV, arising from Ti³⁺ in a distorted octahedral environment. In the bandgap region at 3.5 eV α obey αhν ～ (hν ? E_g)²; it is qualitatively different from the bandgap absorption in crystalline TiO₂. The da/dT spectra show peaks in the bandgap region and at 1.1 eV in the near IR. This last peak is attributed to absorption by small polarons, and its line shape is compared with theoretical predictions.     

Temperature‐tuned band gap energy and oscillator parameters of Tl2InGaSe4 semiconducting layered single crystals

The optical properties of Tl₂InGaSe₄ layered single crystals have been studied through the transmission and reflection measurements in the wavelength range of 500‐1100 nm. The analysis of room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 1.86 and 2.05 eV, respectively. Transmission measurements carried out in the temperature range of 10‐300 K revealed that the rate of change of the indirect band gap with temperature is γ = – 4.4 × 10^‐4 eV/K. The absolute zero value of the band gap energy was obtained as E_gi(0) = 1.95 eV. The dispersion of the refractive index is discussed in terms of the single oscillator model. The refractive index dispersion parameters: oscillator wavelength and strength were found to be 2.53 × 10^–7 m and 9.64 × 10¹³ m^–2, respectively. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)