Void growth via atomistic simulation: will the formation of shear loops still grow a void under different thermo-mechanical constraints?

Abstract

Molecular dynamics (MD) simulations under different mechanical and thermal constraints are carried out with a nanovoid embedded inside a single-crystal, face-centred-cubic copper. The dislocation emission angles measured from MD plots under 0.1 K, uniaxial-strain simulation are in line with the theoretical model. The dislocation density calculated from simulation is qualitatively consistent with the experimental measurement in terms of a saturation feature. The ‘relatively farthest-travelled’ atoms are employed to reflect the correlation between the dislocation structure and the void growth. At a smaller scale, the incomplete shear dislocation loops on the slip plane contribute to the local material transport. At a larger scale, the dislocation structures formed by those incomplete shear loops further facilitate the growth of nanovoid. Compared to the uniaxial-strain case, the void growth under the uniaxial-stress is very limited. The uniaxial-strain loading results in an octahedron void shape. The uniaxial-stress loading turns the nanovoid into a prolate ellipsoid along the loading direction. In the simulation, the largest specimen contains 12 million atoms and the lowest strain rate applied is 2 × 10⁶ s^?1. Under all the different thermomechanical constraints concerned, the formation of incomplete shear dislocation loops are found capable of growing the void.     

冲击条件下含纳米空洞的单晶铜的塌缩

利用分子动力学方法研究了单晶铜中不同大小的球形空洞在冲击波下的演化过程.模拟结果表明不同大小空洞的塌缩过程不同.模拟中冲击波由空洞左边扫向空洞右边.在较大尺寸的空洞塌缩过程中会产生系列的位错环.当空洞半径较小时,先在空洞的右侧形成位错环,当空洞半径增大到某一临界大小时,在空洞左右两侧同时产生位错环,当空洞半径较大时,先在空洞左侧形成位错环.当空洞左右两侧的位错环均形成以后,其右侧位错环前端的生长速度大于其左侧的.空洞半径增大,相应的位错环前端的生长速度变化不大.当空洞半径增大时,空洞中心指向位错源的矢量方 关键词： 纳米空洞 位错环 冲击波 塑性变形     

冲击加载下铝中氦泡和孔洞的塑性变形特征研究

通过分子动力学模拟研究了在相同冲击加载强度下单晶铝中氦泡和孔洞的塑性变形特征,结果发现氦泡和孔洞的塌缩是由发射剪切型位错环引起的,而没有观测到棱锥型位错环发射. 氦泡和孔洞周围的位错优先成核位置基本一致,但是氦泡周围发射的位错环数目比孔洞多,位错环发射速度明显比孔洞快. 且氦泡和孔洞被冲击波先扫过部分比后扫过部分发射位错困难. 通过滑移面上的分解应力分析发现,氦泡和孔洞周围塑性特征的差别是由于氦泡内压引起最大分解应力分布改变造成的. 氦泡和孔洞被冲击波先后扫过部分塑性不对称是因为冲击波扫过时引起形状变化, 关键词： 分子动力学 冲击波 氦泡 孔洞     

Supersonic dislocation stability and nano-twin formation at high strain rate

Improved understanding of the plastic deformation of metals during high-strain-rate shock loading is key to predicting their resulting material properties. This paper presents the results of molecular-dynamics simulations which address two fundamental questions related to materials deformation: the stability of supersonic dislocations and the mechanism of nano-twin formation. The results show that aluminium plastically deforms by the subsonic motion of edge dislocations when subjected to applied shear stresses of up to 600?MPa. Although higher applied stresses initially drive transonic dislocations, this motion is transient, and the dislocations decelerate to a sustained subsonic saturation velocity. Slowing of the transonic dislocation is controlled by the interaction with excited Rayleigh waves. 800?MPa marks a critical shear stress at which dislocation glide gives way to nano-twin formation via the homogeneous nucleation of Shockley partial dislocation dipoles. At still higher applied stresses, additional dislocation dipole nucleation produces a mid-stacking fault transformation of the twinned material.     

A model for the dynamics of loop drag by a gliding dislocation

Clusters of self-interstitial atoms are formed in metals by high-energy displacement cascades, often in the form of small dislocation loops with a perfect Burgers vector. In isolation, they are able to undergo fast, thermally activated glide in the direction of their Burgers vector, but do not move in response to a uniform stress field. The present work considers their ability to glide under the influence of the stress of a gliding dislocation. If loops can be dragged by a dislocation, it would have consequences for the effective cross-section for dislocation interaction with other defects near its glide plane. The lattice resistance to loop drag cannot be simulated accurately by the elasticity theory of dislocations, so here it is investigated in iron and copper by atomic-scale computer simulation. It is shown that a row of loops lying within a few nanometres of the dislocation slip plane can be dragged at very high speed. The drag coefficient associated with this process has been determined as a function of metal, temperature and loop size and spacing. A model for loop drag, based on the diffusivity of interstitial loops, is presented. It is tested against data obtained for the effects of drag on the stress to move a dislocation and the conditions under which a dislocation breaks away from a row of loops.     

A parametric simulation method for discrete dislocation dynamics

A new computer simulation method employed in discrete dislocation dynamics is presented. The article summarizes results of an application of the method to elementary interactions among glide dislocations and dipolar dislocation loops. The glide dislocations are represented by parametrically described curves moving in glide planes whereas the dipolar loops are treated as rigid objects. All mutual force interactions are considered in the models. As a consequence, the computational complexity rapidly increases with the number of objects considered. This difficulty is treated by advanced computational techniques such as suitable accurate numerical methods and parallel implementation of the algorithms. Therefore the method is able to simulate particular phenomena of dislocation dynamics which occur in crystalline solids deformed by single slip: generation of glide dislocations from the Frank-Read source, interaction of glide dislocations with obstacles, their encounters in channels of the bands, sweeping of dipolar loops by glide dislocations and a loop clustering.     

〈111〉晶向冲击加载下单晶铜中纳米孔洞增长的早期动力学行为

利用分子动力学方法模拟计算了单晶铜中纳米孔洞在沿〈111〉晶向冲击加载下增长的早期过程.测量发现不同加载强度下等效孔洞半径随时间近似成线性变化.观测到单孔洞增长的两种位错生长机理：加载强度较低时，只在沿着冲击加载方向的孔洞顶点附近区域有位错的成核和运动；而随着加载强度超过一定阈值，在沿冲击加载和其垂直方向的孔洞顶点区域都观察到位错的成核和运动.在前一种机理作用下，孔洞只沿加载方向增长；在后一种机理作用下，孔洞同时沿加载和垂直于加载方向增长.分析孔洞表面原子的位移历史，发现沿加载及与其垂直方向的孔洞顶点沿径向的速度基本恒定，由此提出了一个孔洞生长模型，可以解释孔洞增长的线性生长规律. 关键词： 纳米孔洞 分子动力学 冲击加载 位错     

沿〈111〉晶向冲击加载下铜中纳米孔洞增长的塑性机制研究

 用分子动力学方法计算模拟了沿〈111〉晶向冲击加载过程中，单晶铜中纳米孔洞（直径约1.3 nm）的演化及其周围区域发生塑性变形的过程。模拟结果表明，在沿〈111〉晶向冲击加载后，在面心立方（fcc）结构中的4族{111}晶面中有3族发生了滑移。伴随孔洞的增长，在所激活的3族{111}晶面上，观察到位错在孔洞表面附近区域成核，然后向外滑移，其中在剪切应力最大的〈112〉方向上，其位错速度超过横波声速，其它〈112〉方向的位错速度低于横波声速。模拟得到的位错阻尼系数范围与实验值基本符合。由于孔洞周围产生的滑移在空间比较对称，孔洞增长形貌接近球形。在恒定的冲击强度下，孔洞半径增长速率近似保持恒定，其速率随着冲击强度的增加而增大。     

Atomic simulations to evaluate effects of stacking fault energy on interactions between edge dislocation and spherical void in face-centred cubic metals

In this study, molecular dynamics simulations were performed to elucidate the effects of stacking fault energy (SFE) on the physical interactions between an edge dislocation and a spherical void in the crystal structure of face-centred cubic metals at various temperatures and for different void sizes. Four different types of interaction morphologies were observed, in which (1) two partial dislocations detached from the void separately, and the maximum stress corresponded to the detachment of the trailing partial; (2) two partial dislocations detached from the void separately, and the maximum stress corresponded to the detachment of the leading partial; (3) the partial dislocations detached from the void almost simultaneously without jog formation; and (4) the partial dislocations detached from the void almost simultaneously with jog formation. With an increase in void size or SFE, the interaction morphology changed in the above-mentioned order. It was observed that the magnitude of the critical resolved shear stress (CRSS) and its dependence on the SFE were determined by these interaction morphologies. The value of the CRSS in the case of interaction morphology (1) is almost equal to an analytical one based on the linear elasticity by employing the Burgers vector of a single partial dislocation. The maximum value of the CRSS is also obtained by the analytical model with the Burgers vector of the two partial dislocations.     

Phase change and stress wave in picosecond laser–material interaction with shock wave formation

When background gas is present in pulsed laser–material interaction, a shock wave down to the nanoscale will emerge. The background gas will affect the phase change and explosion in the target. This study is focused on the void dynamics and stress wave in a model material (argon crystal) under picosecond pulsed laser irradiation. Our results show that existence of ambient gas and the shock wave significantly suppresses the void formation and their lifetime. Void dynamics, including their growing rate, lifetime, and size under the influence of ambient gas are studied in detail. All the voids undergo an accelerating and decelerating process in the growth. The collapsing process is almost symmetrical to the growing process. Higher laser fluence is found to induce an obvious foamy structure. Stress wave formation and propagation, temperature contour, and target and gas atom number densities are studied to reveal the underlying physical processes. Although the interaction of the plume with ambient gas significantly suppresses the void formation and phase explosion, no obvious effect is found on the stress wave within the target. Very interestingly, secondary stress waves resulting from re-deposition of ablated atoms and void collapse are observed, although their magnitude is much smaller than the directly laser-induced stress wave.     

Dislocation loop evolution from a source in a field of randomly distributed uniform obstacles

We have created a computer simulation of dislocation loop emission by a Frank-Read source and its evolution in a uniform field of randomly distributed, weak, point obstacles. We discovered a threshold source length such that dislocation loops from shorter sources expand in a super-obstacle regime; otherwise they enlarge by thermal activation, and there is a relationship to the strength of the obstacle. We determine the range of stresses in which dislocation loops expand above the obstacle, shrink, or grow via thermal activation. In contrast with infinite linear dislocations, we do not observe stable evolution (i.e., velocity and other characteristics) of dislocation loops in all stress regimes. Tomsk State Architectural-Construction Academy. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 61–64, June, 1997.     

Irradiation hardening of reactor pressure vessel steels due to the dislocation loop evolution

The irradiation hardening of reactor pressure vessel steels due to the formation of dislocation loops is analyzed. The analysis is based on the original model for the nucleation and subsequent evolution of dislocation loops in irradiated materials. The loop formation in displacement cascades is taken into account, along with the homogeneous clustering of point defects. The loop evolution is shown to contribute mainly to the athermal component of the yield stress, which is determined by interaction of gliding dislocations with strong barriers. Irradiation-induced hardening is evaluated as a function of irradiation dose and temperature, dose rate, material parameters and initial microstructure. The model results are compared with experimental data for neutron irradiated pressure vessel steels of various grades and with empirical low power expressions of the yield stress increase with increasing irradiation dose.     

激光冲击强化“残余应力洞”的形成机制

利用ABAQUS有限元软件进行了单个圆形高斯光斑的激光冲击强化数值模拟,分析材料表面光斑中心区域形成的"残余应力洞"现象,并通过分析材料的动态力学响应特征揭示了"残余应力洞"的形成机制。结果表明:在冲击波加载时,光斑边界处会产生很强的剪切应力,形成向四周传播的表面稀疏波和向材料内部传播的剪切波。当稀疏波同时传播到光斑中心,发生相遇、汇聚,使材料产生急剧的上下位移过程,造成冲击波加载塑性变形后的二次塑性变形。二次塑性变形中形成了较大的剪切塑性应变,并降低了冲击波加载阶段产生的轴向和径向塑性应变,使残余压应力降低,从而形成"残余应力洞"。     

Modeling of a dislocation source in the field of activated and unactivated discrete barriers

In this work, computer-modeling methods have been used to consider the formation of a dislocation loop. The barrier strengths correspond to the reacting (unactivated) and unreacting (activated) forest dislocations. It is determined that the minimum operating stress of the source coincides with the classical, critical Frank-Read stress only for a rather narrow range of length of the sources. In a majority of the cases, it is comparable to the critical stress for flow past a network of barriers. Beyond the front of the dislocations propagating from the source, dislocation loops formed by the Orowan mechanism remain, the total length of which is equal to 12–14% of the length of the loop formed.Tomsk Structural Engineering Institute. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 20–24, October, 1992.     

α-Fe裂纹的分子动力学研究

通过分子动力学方法，模拟了α-Fe裂纹的单轴拉伸实验中的形变过程.研究了不同晶体取向裂纹的形变特点和断裂机理，观察到各种形变现象，如位错形核和发射，位错运动，堆垛层错或孪晶的形成，纳米空洞的形成与连接等.计算结果表明，裂纹扩展是塑性过程和弹性过程相结合的过程，其中塑性过程表现为由裂尖发射的位错导致的原子切变行为，而弹性过程的发生则是由无位错区中的原子断键所导致.同时还研究了α-Fe裂纹的形变特点和断裂机理与温度场和应力场的依赖关系.     

高应变率压缩下纳米孔洞对金属铝塑性变形的影响研究

本文利用分子动力学模拟方法研究了含纳米孔洞金属铝在[110]晶向高应变率单轴压缩下弹塑性变形的微观过程. 对比单孔洞和完整单晶的模型, 讨论了多孔金属的应力应变关系及其位错发展规律. 研究结果表明, 对于多孔模型的位错积累过程, 位错密度随应变的增加可大致分为两个线性阶段. 由同一个孔洞生成的位错在相互靠近过程中, 其滑移速度越来越小; 随着位错继续滑移, 源自不同孔洞的位错之间开始交叉相互作用导致应变硬化. 达到流变峰应力之后又由于位错密度增殖速率升高发生软化. 当应变增加到11.8%时, 所有孔洞几乎完全坍缩, 并观察到在此过程中有棱位错生成.     

Supersonic dislocations observed in a plasma crystal

Experimental results on the dislocation dynamics in a two-dimensional plasma crystal are presented. Edge dislocations were created in pairs in lattice locations where the internal shear stress exceeded a threshold and then moved apart in the glide plane at a speed higher than the sound speed of shear waves, C(T). The experimental system, a plasma crystal, allowed observation of this process at an atomistic (kinetic) level. The early stage of this process is identified as a stacking fault. At a later stage, supersonically moving dislocations generated shear-wave Mach cones.     

冲击加载下孔洞贯通的微观机理研究

利用分子动力学方法计算模拟了沿〈100〉晶向冲击加载下单晶铜中双孔洞的贯通过程.发现孔洞周围发射剪切型位错环是孔洞塌缩和增长的原因.在拉伸阶段,孔洞首先分别独立增长,随后其周围塑性变形区开始交叠和相互作用,最后两个孔洞开始直接贯通.这种贯通模式和实验对延性材料中孔洞贯通过程的显微观察结果一致.对四种不同θ值（θ为两个孔洞中心连线与冲击加载方向之间的夹角）的模型分别进行了计算模拟,发现在相同的冲击加载强度下,θ＝0°和θ＝30°的孔洞之间没有相互贯通; 关键词： 纳米孔洞 分子动力学 冲击加载 贯通     

热应力作用降低LPE层中的位错

提出由温差造成热剪切应力,引起衬底穿线位错滑移,形成<110>界面位错,从而降低LPE层中位错的模型。稳定自然对流下的温度梯度液相外延,存在衬底厚度方向的温差,能在边缘固定的衬底中造成热剪切应力。生长了厚GaAs和Ga_1-xAl_xAs层(x<0.3),估算的热剪切应力大于产生<110>暗线缺陷的临界剪切应力。表面腐蚀坑观察表明,外延层位错密度下降,或无位错。界面蚀槽和阴极荧光观察表明,衬底穿线位错在界面弯曲成<110>界面位错。透射电子显微镜观察表明,界面位错多 关键词：     

Void effect on mechanical properties of copper nanosheets under biaxial tension by molecular dynamics method

The relationship between void size/location and mechanical behavior under biaxial loading of copper nanosheets containing voids are investigated by molecular dynamics method. The void location and the void radius on the model are discussed in the paper. The main reason of break is discovered by the congruent relationship between the shear stress and its dislocations. Dislocations are nucleated at the corner of system and approached to the center of void with increased deformation. Here, a higher stress is required to fail the voided sheets when smaller voids are utilized. The void radius influences the time of destruction. The larger the void radius is, the lower the shear stress and the earlier the model breaks. The void location impacts the dislocation distribution.