Synthesis of Atomically Thin Boron Films on Copper Foils

Two‐dimensional boron materials have recently attracted extensive theoretical interest because of their exceptional structural complexity and remarkable physical and chemical properties. However, such 2D boron monolayers have still not been synthesized. In this report, the synthesis of atomically thin 2D γ‐boron films on copper foils is achieved by chemical vapor deposition using a mixture of pure boron and boron oxide powders as the boron source and hydrogen gas as the carrier gas. Strikingly, the optical band gap of the boron film was measured to be around 2.25 eV, which is close to the value (2.07 eV) determined by first‐principles calculations, suggesting that the γ‐B₂₈ monolayer is a fascinating direct band gap semiconductor. Furthermore, a strong photoluminescence emission band was observed at approximately 626 nm, which is again due to the direct band gap. This study could pave the way for applications of two‐dimensional boron materials in electronic and photonic devices.     

Low-Pressure Chemical Vapor Deposition of Silicon Carbide Thin Films from Organopolysilanes

(Me₃Si)₂SiMe₂, (Me₃Si)₃SiMe and (Me₃Si)₄Si were used as precursors for the deposition of polycrystalline β-SiC thin films on silicon substrates at 1000–1200°C in a low-pressure hot-wall chemical vapor deposition reactor. The thin films were analyzed by X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy.     

Textured fluorine-doped tin dioxide films formed by chemical vapour deposition

The use of an aerosol delivery system enabled fluorine-doped tin dioxide films to be formed from monobutyltin trichloride methanolic solutions at 350-550 °C with enhanced functional properties compared with commercial standards. It was noted that small aerosol droplets (0.3 μm) gave films with better figures of merit than larger aerosol droplets (45 μm) or use of a similar precursor set using atmospheric pressure chemical vapour deposition (CVD) conditions. Control over the surface texturing and physical properties of the thin films were investigated by variation in the deposition temperature and dopant concentration. Optimum deposition conditions for low-emissivity coatings were found to be at a substrate temperature of about 450 °C with a dopant concentration of 1.6 atm% (30 mol% F:Sn in solution), which resulted in films with a low visible light haze value (1.74%), a high charge-carrier mobility (25 cm(2) V s(-1)) and a high charge-carrier density (5.7×10(20) cm(-3)) resulting in a high transmittance across the visible (≈80%), a high reflectance in the IR (80% at 2500 nm) and plasma-edge onset at 1400 nm. Optimum deposition conditions for coatings with applications as top electrodes in thin film photovoltaics were found to be a substrate temperature of about 500 °C with a dopant concentration of 2.2 atm% (30 mol% F:Sn in solution), which resulted in films with a low sheet resistance (3 Ω sq(-1)), high charge-carrier density (6.4×10(20) cm(-3)), a plasma edge onset of 1440 nm and the films also showed pyramidal surface texturing on the micrometer scale which corresponded to a high visible light haze value (8%) for light scattering and trapping within thin film photovoltaic devices.     

Reactivity of Nickel(II) Porphyrins in oCVD Processes—Polymerisation,Intramolecular Cyclisation and Chlorination

Oxidative chemical vapour deposition of (5,15-diphenylporphyrinato)nickel(II) (NiDPP) with iron(III) chloride as oxidant yielded a conjugated poly(metalloporphyrin) as a highly coloured thin film, which is potentially useful for optoelectronic applications. This study clarified the reactive sites of the porphyrin monomer NiDPP by HRMS, UV/Vis/NIR spectroscopy, cyclic voltammetry and EPR spectroscopy in combination with quantum chemical calculations. Unsubstituted meso positions are essential for successful polymerisation, as demonstrated by varying the porphyrin meso substituent pattern from di- to tri- and tetraphenyl substitution. DFT calculations support the proposed radical oxidative coupling mechanism and explain the regioselectivity of the C−C coupling processes. Depositing the conjugated polymer on glass slides and on thermoplastic transparent polyethylene naphthalate demonstrated the suitability of the porphyrin material for flexible optoelectronic devices.     

Deposition of Silicon Carbide Thin Films from 1,1-Dimethyl-1-Silacyclobutane

1,1-Dimethyl-1-silacyclobutane was used as a single-source precursor to deposit SiC thin films on Si(100) and Si(111) by low-pressure chemical vapor deposition (LPCVD). Polycrystalline β-SiC thin films were grown at temperatures 1100 and 1200°C. At temperatures between 950 and 1100°C, amorphous thin films of silicon carbide were obtained. The films were studied by X-ray diffraction (XRD), infrared spectroscopy (IR), scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM), and electron diffraction (ED).     

Metal-Organic Chemical Vapor Deposition (MOCVD) Synthesis of Heteroepitaxial Pr0.7Ca0.3MnO3 Films: Effects of Processing Conditions on Structural/Morphological and Functional Properties

Calcium-doped praseodymium manganite films (Pr_0.7Ca_0.3MnO₃, PCMO) were prepared by metal-organic chemical vapor deposition (MOCVD) on SrTiO₃ (001) and SrTiO₃ (110) single-crystal substrates. Structural characterization through X-ray diffraction (XRD) measurements and transmission electron microscopy (TEM) analyses confirmed the formation of epitaxial PCMO phase films. Energy dispersive X-ray (EDX) and X-ray photoelectron spectroscopy (XPS) characterization was used to confirm lateral and vertical composition and the purity of the deposited films. Magnetic measurements, obtained in zero-field-cooling (ZFC) and field-cooling (FC) modes, provided evidence of the presence of a ferromagnetic (FM) transition temperature, which was correlated to the transport properties of the film. The functional properties of the deposited films, combined with the structural and chemical characterization collected data, indicate that the MOCVD approach represents a suitable route for the growth of pure, good quality PCMO for the fabrication of novel spintronic devices.     

Organometallic chemical vapor deposition using allyl precursors

Homoleptic allyl derivatives of many Main-Group and transition metals, M(C₃H₅)_n, are readily available through one-pot syntheses using metal halides and allyl Grignard reagents or by alkylation of alkali-metal salts. The relatively low molecular weight of a C₃H₅ ligand contributes to high vapor pressures whilst the stability of the allyl radical is predicted to reduce decomposition temperatures. These compounds represent a class of volatile precursors for organometallic chemical vapor deposition (OMCVD) of thin films. Film growth studies using iridium, molybdenum, palladium, platinum, rhodium, selenium, tellurium and tungsten compounds are reviewed and the relationships between pyrolysis pathways and film purity are discussed.     

Ligand influence on connectivity and processing: magnetic crystals based on metalloceniums and films of TCNE-based magnets (TCNE=tetracyanoethylene)

Molecular materials built from coordination complexes exhibit properties that can be explained through intermolecular electronic interactions driven by the ligand moieties. The nature of the ligand in the precursor molecules governs the connectivity of the magnetic phases and the possibility of producing them by using a gas-phase process. Metallocenium, metal bisdithiolate materials, and solvated and solvent-free [M(tcne)2] (tcne=tetracyanoethylene) magnets illustrate such features.     

Study of Thin Polymeric Film Deposited by the PECVD Process for use at 193 nm

A plasma enhanced chemical vapor deposition (PECVD) reactor was used to deposit thin polymeric films with high absorption at 193 nm. The reactor is suitable to deposit uniform and pinhole free thin polymeric films with conformality over 95%. Conformal films with thickness as low as 200 Å have been deposited on silicon, glass, and quartz substrates, as well as silicon oxide, silicon nitrate, and aluminum films. Deposited films had variations in thickness of 3 to 5% over an area of 8 inches in diameter. Thin films deposited on silicon substrates under varying levels of RF power were scanned using the AFM technique. The measurements show increasing surface roughness of the scanned samples as the RF power increases.     

Surface Chemistry of tert‐Butylphosphine (TBP) on Si(001) in the Nucleation Phase of Thin‐Film Growth

We combine density functional theory calculations and scanning tunneling microscopy investigations to identify the relevant chemical species and reactions in the nucleation phase of chemical vapor deposition. tert‐Butylphosphine (TBP) was deposited on a silicon substrate under conditions typical for surface functionalization and growth of semiconductor materials. On the activated hydrogen‐covered surface H/Si(001) it forms a strong covalent P?Si bond without loss of the tert‐butyl group. Calculations show that site preference for multiple adsorption of TBP is influenced by steric repulsion of the adsorbate's bulky substituent. STM imaging furthermore revealed an anisotropic distribution of TBP with a preference for adsorption perpendicular to the surface dimer rows. The adsorption patterns found can be understood by a mechanism invoking stabilization of surface hydrogen vacancies through electron donation by an adsorbate. The now improved understanding of nucleation in thin‐film growth may help to optimize molecular precursors and experimental conditions and will ultimately lead to higher quality materials.     

Effect of initial precursor concentration on TiO2 thin film nanostructures prepared by PCVD system

TiO₂ thin film was prepared on Si substrate by plasma chemical vapor deposition (PCVD) system and the morphologies of TiO₂ thin film were controlled by adjusting the initial precursor concentration. As the initial titanium tetra-isopropoxide (TTIP) concentration increases in PCVD reactor, the shapes of TiO₂ particles generated in PCVD reactor change from the spherical small-sized particles around 20 nm and spherical large-sized particles around 60 nm to aggregate particles around 100 nm. The TiO₂ particles with different shapes deposit on the substrate and become the main building blocks of resulting TiO₂ thin film. We observed the TiO₂ thin film with smooth morphology at low initial TTIP concentration, granular morphology at medium initial TTIP concentration, and columnar morphology at high initial TTIP concentration. It is proposed that we can prepare the TiO₂ thin film with controlled morphologies in one-step process just by adjusting the initial precursor concentration in PCVD.     

硼烯化学合成进展与展望

硼烯是由硼原子构成的单原子层厚的二维材料,具有丰富的化学和物理性质。本文集中介绍近年来硼烯在合成方面的理论与实验研究进展,重点分析基底、生长温度、生长前驱物等因素对硼成核选择性的影响,探讨能够促进硼烯成核的潜在方法。进一步将分析硼烯生长机制及理论研究方法,以此展望通过在基底上化学气相沉积合成硼烯的可能途径。本文旨在促进大面积、高质量硼烯样品的制备以推动硼烯的实际应用。     

Vapor‐Based Synthesis of Poly[(4‐formyl‐p‐xylylene)‐co‐(p‐xylylene)] and Its Use for Biomimetic Surface Modifications

Summary: The vapor‐based synthesis and characterization of a reactive polymer, poly[(4‐formyl‐p‐xylylene)‐co‐(p‐xylylene)] ( 1 ), have been reported. The reactive polymer coating enables the immobilization of oligosaccharides via the chemoselective aldehyde‐hydrazide coupling reaction.

     

Process study of thermal plasma chemical vapor deposition of diamond,part II: Pressure dependence and effect of substrate pretreatment

The effect of pressure during thermal plasma chemical vapor deposition of diamond films has been investigated for a pressure range from 100 to 760 Torr. The maximum growth rate in our experiments occurs at 270 Torr for substrate temperatures around 1000°C. The existence of an optimum pressure for diamond deposition may he related to the balance between generation and recombination of atomic hydrogen and carbon-containing active species in front of the substrate. To estimate the concentrations of atomic hydrogen and methyl radicals under thermal plasma conditions, calculations based on thermodynamic equilibrium have been performed. This approximate evaluation provides useful guidelines because rapid diffusion results in a near frozen chemistry within the boundary layer. The effect of substrate pretreatment on diamond deposition depends on the type of substrate used. Two growth modes have been observed-layer growth and island growth of diamond crystals on various substrates. Screw dislocations have been observed in diamond deposition in thermal plasmas, and defects such as secondary nucleations are more concentrated along (III) directions than along (100) directions.     

Organochromium precursors for low-temperature OMCVD of chromium-based coatings

Many organochromium compounds have been used as volatile chromium sources to prepare chromium-based coatings by chemical vapor deposition. Chromium carbides, nitrides, oxides and alloys have been deposited on different substrates at low temperature (<500 °C). Organochromium precursors are reviewed and some of their draw-backs are discussed. They are classified according to the nature of the chromium-ligand bonds (carbonyls, amides, arenes or alkyls). Furthermore, experimental results obtained in the same apparatus for a series of representative precursors are reported to discuss, with literature data, how the ligand affects the composition and the structure of the films.