Slave-Fermion Mean-Field Theory of Heisenberg Model

A nearly half-filled two-dimensional Heisenberg model is investigated. A slave-fermion method with fermions as the charge carriers and bosons as the spin carriers is proposed. The ground state shows antiferromagnetic long range order at T = 0. The spin-spin correlation and static susceptibility are also obtained.     

?500 mm阵列透镜波前采样器的研制

设计加工了一个由484块单透镜组成的大口径阵列透镜,并设计了一套光束波前采样及测量实验系统。在实验过程中,合理匹配了阵列透镜波前采样器、CCD、成像屏和图像采集处理各系统参数,并讨论了该系统的动态范围和采样精度。利用平行光标定了该系统,且测量了大口径波前的像差,测量值与理论值相吻合。实验证明了阵列透镜波前采样器用于波前采样的技术可行性。     

Tunable Single-Passband Microwave Photonic Filter Based on Sagnac Loop and Fabry-Perot Laser Diode

A tunable single-passband microwave photonic filter is proposed and demonstrated, based on a laser diode(LD)array with multiple optical carriers and a Fabry-Perot(F-P) laser diode. Multiple optical carriers in conjunction with the F-P LD will realize a filter with multiple passbands. By adjusting the wavelengths of the multiple optical carriers, multiple passbands are merged into a single passband with a broadened bandwidth. By varying the number of the optical carrier, the bandwidth can be adjusted. The central frequency can be tuned by adjusting the wavelength of the multiple optical carriers simultaneously. A single-passband filter implemented by two optical carriers is experimentally demonstrated.     

Ultrafast all-optical modulation on a silicon chip

We experimentally demonstrate ultrafast all-optical modulation using a micrometer-sized silicon photonic integrated device. The device transmission is strongly modulated by photoexcited carriers generated by low-energy pump pulses. A p-i-n junction is integrated on the structure to permit control of the generated carrier lifetimes. When the junction is reverse biased, carriers are extracted from the device in a time as short as 50 ps, permitting greater than 5 Gbit/s modulation of optical signals on a silicon chip.     

关于p-n合金结中少数载流者的注射理论

本文用一维模型计算了p-n合金结中少数载流者的一般注射理论。这里假设复合率是与注入载流者的密度成正比。首先,我们讨论了大注射和小注射的两种极端情况,这样得到的结果被用作零级近似解来计算p-n结中注入少数载流者的分布情况。用逐步近似的方法我们得到了注射效率和注射强度(即注入少数载流者的密度与原有多数载流者的密度之比)间的解析关系。在同样的基础上也得到了通过结的总电流密度和注射强度间的类似关系。这理论的结果表明;对一个平常的合金结晶体三极管来说,当发射极电流增加时,发射极的注射效率逐渐下降。在很大的注射强度下,注射效率趋近于极限值1/(1+b),其中b是电子迁移率与空穴迁移率之比。对一个具有很低注射效率的p-n合金结来说,在注射电流小的时候,注射效率是正比于通过结的总电流;当往射电流很大时,注射效率趋近于极限值1/(1+b)。理论结果还表明,在小注射情下,通过p-n合金结的总电流是正比于注射强度;而在大注射情况下,它是正比于注射强度的平方。     

盖革模式下反偏压对雪崩光电二极管贯穿特性的影响

利用无源抑制技术,研究了盖革模式下雪崩光电二极管（APD）的电流一电压特性。发现光电流和暗电流的一个显著区别是暗电流不反映贯穿特性,这是光生栽流子和热载流子有不同统计分布的实验证据,也说明在盖革模式下,暗计数增加比光子探测效率增加更快的原因是由于载流子收集效率不同引起的。根据其贯穿特性适当选择盖革模式下APD的反偏压可提高单光子探测器的信噪比。     

Mechanisms of Auger recombination in semiconducting quantum dots

Microscopic calculation of the probability of Auger recombination of charge carriers localized in a semiconducting quantum dot (QD) is carried out. It is shown that two mechanism of Auger recombination (nonthreshold and quasi-threshold) operate in the QD. The nonthreshold Auger recombination mechanism is associated with scattering of a quasimomentum from a heterobarrier, while the quasi-threshold mechanism is connected with spatial confinement of the wave functions of charge carriers to the QD region; scattering of carriers occurs at the short-range Coulomb potential. Both mechanisms lead to a substantial enhancement of Auger recombination at the QD as compared to a homogeneous semiconductor. A detailed analysis of the dependence of Auger recombination coefficient on the temperature and QD parameters is carried out. It is shown that the nonthreshold Auger recombination process dominates at low temperatures, while the quasi-threshold mechanism prevails at high temperatures. The dependence of the Auger recombination coefficient on the QD radius experiences noticeable changes as compared to quantum wells and quantum filaments.     

The semi-classical hopping model of the electrical conductivity of semiconductors

A model of localized carriers moving in a hopping manner from one crystallographic point to a neighbouring one is the starting point for the model presented here for the electrical conductivity in semiconductors. An effort is made to link this hopping type of motion of carriers with their mean uniform motion in the crystal. With an assumed shape for the potential barrier for a single hop of a carrier, the model permits the calculation of the effective mass, the mobility of a carrier with energy E, the mean mobility of all carriers in the band, and the electrical conductivity as a function of temperature, T. The model is presented and exemplified by a one-dimensional system.     

High Pressure as a Tool for Characterizing Charge Carriers in a Conducting Polymer

A characteristic feature of conducting polymers is the existence of localized charge carriers. The localization process is closely related to the charge carrier-phonon interaction, which is a function of local molecular properties of the polymer chain on which the carriers are localized. Depending on this interaction in conducting polymers with a non-degenerate ground state singly charged polarons or doubly charged bipolarons may exist. It will be shown that high pressure is a useful tool for studying charge carrier properties by influencing the local molecular conformation. A transition between both types of charge carriers is observed in polypyrrole.     

Photonic microwave bandpass filter with improved dynamic range

A technique to improve the dynamic range of a photonic microwave bandpass filter is proposed and experimentally demonstrated. The filter is implemented based on phase modulation to intensity modulation conversion using fiber Bragg gratings (FBGs) serving as frequency discriminators, with the optical carriers located at the left or right slopes of the FBGs, to generate positive or negative tap coefficients. The dynamic range of the photonic microwave bandpass filter is increased by reducing the optical-carrier-induced shot noise and relative intensity noise at the photodetector, which is realized by placing the optical carriers at the lower slopes of the FBG reflection spectra. A photonic microwave bandpass filter with an improvement in dynamic range of about 10 dB is demonstrated.     

Magnetic properties of nanosized diluted magnetic semiconductors with band splitting

A continual model of nonuniform magnetism in thin films and wires made of a diluted magnetic semiconductor is considered with regard to the finite spin polarization and band splitting of carriers responsible for the indirect Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction between magnetic impurities. Spatial distributions (across the film thickness or along the wire radius) of magnetization and the concentrations of carriers with different spin orientations for different temperatures, as well as the temperature dependence of the average magnetization, are obtained as a solution to a nonlinear integral equation.     

用红外光激励电流法研究非晶半导体带隙态分布

本文提出了用红外光激励电流法研究非晶半导体带隙态的新方法。当一本征脉冲光照射样品时,大量非平衡载流子陷落到带隙态上;经过延迟时间t_d,用红外光激励残存的非平衡载流子,能引起红外光电导的过冲,过冲量与延迟时间t_d成幂次关系。基于多次陷落模型分析红外光电导过冲与温度及时间t_d的关系,可以得到带隙态分布的细节。 关键词：     

Principles of Adaptive Optics, 3rd edn., by Robert K. Tyson

A review is made of the quantum effects which are observed in the transport coefficients of semiconductors. Quantization of the free carriers in semiconductors is produced whenever an external potential acts on an otherwise uniform and perfect crystal. Typical examples are a magnetic field, an electric field or the physical boundaries of the sample. A magnetic field quantizes the electron and hole states into a ladder of equally spaced Landau levels. This gives rise to the Shubnikov–de Haas, magnetophonon and magneto-impurity effects, where the positions of the Landau levels resonate with the Fermi, phonon, or impurity energies present in the sample. A series of oscillations in the magneto-resistance of many different types of materials results. Electric fields applied to the surface of metal oxide semiconductor (MOS) devices result in a set of quantum levels for motion perpendicular to the surface. At low temperatures the charge carriers are bound to the surface and behave as if they were two-dimensional. This is shown to give rise to very dramatic oscillatory metal–insulator behaviour in high magnetic fields. Quantization is also shown to occur in very thin layers of semiconductors which act like a simple square well potential, the energy levels of which can be studied as a function of layer thickness. The carriers are confined within the layers, and also show two-dimensional behaviour.     

High mobility in a two dimensional electron system with a thinned barrier

A variety of novel experiments involving mesa structures of a two dimensional electron system (2DES) require the fabrication of a metal electrode on top of the mesa. We describe a fabrication process in which the top barrier layer is thinned to achieve low interface resistance, and the effect of the diminished barrier layer on the transport characteristics of carriers in the 2DES is studied. The sample is an InAs inserted heterostructure with strong intrinsic spin–orbit interaction α. Shubnikov–de Haas, resistivity and Hall experiments are used to characterize the carrier density, mobility and spin–orbit interaction of the carriers and to compare characteristics with a sample in which the structure is not altered. Our results show that the integrity of the heterostructure and the characteristics of the carriers can be maintained when the thickness of the top barrier is as little as 5 ± 2 nm.     

Generalization of the Hutson and White theory to the case of piezosemiconductors with mixed conductivity

The Hutson-White theory is extended to the case when there are mobile charge carriers of both signs in a piezeosemiconductor. Expressions are obtained for the damping and velocity of the longitudinal sound wave being propagated along the z axis in the piezosemiconductor as a function of the magnitude of the longitudinal electrical field, as well as for the constant current density originating here. It is shown that the acoustic wave changes the conductivity of a piezosemiconductor with mixed conductivity. A method is proposed for determining the mobility simultaneously of both the positive and negative carriers in an intrinsic piezosemiconductor.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 55–58, November, 1984.     

Energy spectrum and effective mass of carriers in the InSe/GaSe superlattice

Within an effective mass approximation the energy spectrum and mass of carriers in the InSe/GaSe superlattice have been calculated. The superlattice belongs to type II: electrons are primarily confined to the InSe layers whereas the holes are mosfly confined to the GaSe layers. The characteristic feature of electronic structure of the superlattice is the existence of minibands of light carriers at the θ point of the Brillouin zone and minibands of heavy carriers at theM point. The dependence of the miniband structure on thickness of layers has been computed. It is shown that the minibands of light and heavy carriers compete with one another in energy. A general conclusion is made concerning the influence of the competition between the minibands on optic and kinetic properties of the superlattice.     

Impulse response of a heterojunction MSM photodiode

A two-dimensional model is used to simulate drift of photogenerated carriers in the active region of high-speed photodiodes (metal-semiconductor-metal (MSM) rectifying contacts) that are made as a conventional planar structure and a structure with a heterojunction. These two types of photodiode structures are compared in terms of the impulse response and quantum efficiency. Variation of the planar MSM diode response with decreasing size of the interdigitated contact system is analyzed. The possibility of improving the speed of response of the MSM diode is discussed. It is shown that the structure with an InP/GaInAs heterojunction considerably modifies the transport of photogenerated carriers and remarkably improves the response speed.     

一种新型SOI Mach-Zehnder干涉型电光调制器的设计

在超紧缩双曲锥形3dB多模干涉耦合器的基础上,设计了一种新的Silicon-on-insulator (SOI) Mach-Zehnder干涉型电光调制器.与传统的Y分支器相比,双曲锥形3dB耦合器的制作容差大,而长度缩短了近30%,使得整个器件的尺寸大幅减小.调制区采用横向注入的PIN结构,模拟结果表明:当外加偏压为0.86V时,器件的调制深度最大,此时注入电流为13.2mA,对应的器件功耗为11.4mW.     

Energy spectrum and effective mass of carriers in the InSe/GaSe superlattice

Within an effective mass approximation the energy spectrum and mass of carriers in the InSe/GaSe superlattice have been calculated. The superlattice belongs to type II: electrons are primarily confined to the InSe layers whereas the holes are mosfly confined to the GaSe layers. The characteristic feature of electronic structure of the superlattice is the existence of minibands of light carriers at the θ point of the Brillouin zone and minibands of heavy carriers at theM point. The dependence of the miniband structure on thickness of layers has been computed. It is shown that the minibands of light and heavy carriers compete with one another in energy. A general conclusion is made concerning the influence of the competition between the minibands on optic and kinetic properties of the superlattice.     

Mechanism of dc conduction in polyaniline doped with sulfuric acid

A temperature variation of dc conductivity in the range 77–300 K has been carried out in order to explore the mechanism of charge transport in polyaniline (PAN) doped with sulfuric acid. The variable range hopping (VRH) exponent changes as the transition of the PAN lattice takes place in a narrow pH range thereby indicating that the charge transport is crucially composition dependent. A decrease in activation energy has been observed as the doping level is increased. Spin concentration of charge carriers determined by electron spin resonance spectroscopy has also been found to depend on the doping level of the specimen. Polarons and bipolarons formed during the doping process are the charge carriers in this system. The temperature dependence of dc conductivity and activation energy data are indicative of existence of both VRH and mixed conduction for various doping levels in these samples.