Transport of Electron Pairs in a Superconducting Junction Device: Underdamped Case

Transport of electron pairs in a superconducting junction device in the underdamped case is investigated. It is shown that the capacitance of the junctions can slow the movement of the electron pairs and reduce the net voltage. It is also shown that, for the underdamped case and the overdamped case, the movement of the electron pairs in this superconducting junctions device has some similar features. By controlling the correlation between the additive and multiplicative noise, the flux can be reversed. In addition, if the additive noise strength (or the temperature T) is large enough, a reversal can also be induced.     

Giant-Resonance for a Four-Dimensionally Coupled System with Dichotomous Noise

In this paper, we investigate a four-dimensionally coupled system driven by dichotomous noise. A new kind of stochastic resonance is found, for which the response of the system to the input signal can be hugely intensified.     

Net Voltage and Phenomenon of Resonance Induced by Chaotic Signal for a Superconducting Junctions Device

The effects of a quenched chaotic signal on the over-damped motion of the electron pairs of a superconducting junctions device are studied. It is shown that the chaotic signal can induce the net voltage and the phenomenon of resonance.     

Effect of Asymmetry of Dichotomous Noise on Transport of Particles

In this paper, an additive dichotomous noise model and a multiplicative dichotomous noise model are investigated for the effect of the asymmetry of the additive and multiplicative dichotomous noises on the transport of the particles, in the presence of spatial symmetry and asymmetry, respectively. It is shown that, in the presence of spatial asymmetry, the asymmetry of the dichotomous noise can weaken or enhance the transport of the particles; while in the absence of spatial asymmetry, the nonzero current induced by the noise＇s asymmetry is ＂symmetric＂ around the zero current. In addition, a current reversal can be produced by controlling the noise＇s asymmetry parameter; and we find that, for some values of the noise＇s asymmetry parameter, the multiplicative dichotomous noise can more easily induce the transport of the particles than the additive dichotomous noise.     

Effects of the Noise on Voltage-Current Characteristics of Josephson Effect

In the case of T >> hω/k, by expanding the quasiparticle current power spectrum up to the third order term of hω/2kT, two noises are obtained: one is a white noise, the other is an O-U noise. We find that the two noises are the negative correlated noises, and correlation parameter λ is equal to -√6/3. Effects of the correlated noises on voltage-current characteristics curve are studied. The numerical computations show that the correlation parameter λ has very large effects on the voltage-current characteristics, but the correlation time τ of the O-U noise has a little effect.     

双带紧束缚模型中噪声对超晶格中电子输运性质的影响

运用直交流电场驱动下的双带紧束缚模型,研究了噪声对超晶格中电子输运性质的影响.数值结果表明,外部噪声能够破坏瞬时电流的周期性并且能够削减长时平均电流的峰值.随着噪声强度的增加,平均电流峰的高度降低,宽度增加;当增大噪声的衰减常数时,平均电流峰会有类似上述变化.     

SiC电子输运特性的Monte Carlo数值模拟

利用系综MonteCarlo法研究了2H ,4H和6HSiC的电子输运特性.在模拟中考虑了对其输运过程有着重要影响的声学声子形变势散射、极化光学声子散射、谷间声子散射、电离杂质散射以及中性杂质散射.通过计算,获得了低场下这几种不同SiC多型电子迁移率同温度的关系,并以4H SiC为例,重点分析了中性杂质散射的影响.最后对高场下电子漂移速度的稳态和瞬态变化规律进行了研究.将模拟结果同已有的实验数据进行了比较,发现当阶跃电场强度为10×106V·cm-1时,4H Sic电子横向瞬态速度峰值接近33×107cm·s^-1,6H Sic接近30×107cm·s^-1.     

Effect of Asymmetric Potential and Gaussian Colored Noise on Stochastic Resonance

The phenomenon of stochastic resonance (SR) in a bistable nonlinear system is studied when the system is driven by the asymmetric potential and additive Gaussian colored noise. Using the unified colored noise approximation method, the additive Gaussian colored noise can be simplified to additive Gaussian white noise. The signal-to-noise ratio (SNR) is calculated according to the generalized two-state theory (shown in [H.S. Wio and S. Bouzat, Brazilian J.Phys. 29 (1999) 136]). We find that the SNR increases with the proximity of a to zero. In addition, the correlation time τ between the additive Gaussian colored noise is also an ingredient to improve SR. The shorter the correlation time τ between the Gaussian additive colored noise is, the higher of the peak value of SNR.     

Effect of Asymmetric Potential and Gaussian Colored Noise on Stochastic Resonance

The phenomenon of stochastic resonance （SR） in a bistable nonlinear system is studied when the system is driven by the asymmetric potential and additive Gaussian colored noise. Using the unified colored noise approximation method, the additive Gaussian colored noise can be simplified to additive Gaussian white noise. The signal-to-noise ratio （SNR） is calculated according to the generalized two-state theory （shown in [H.S. Wio and S. Bouzat, Brazilian J.Phys. 29 （1999） 136]）. We find that the SNR increases with the proximity of a to zero. In addition, the correlation time T between the additive Gaussian colored noise is also an ingredient to improve SR. The shorter the correlation time T between the Gaussian additive colored noise is, the higher of the peak value of SNR.     

小目标红外图像背景噪声的抑制及方法讨论

提取复杂背景条件下目标红外信号的方法有很多,而采用背景噪声抑制的方法是检测目标红外信号的一种有效方法。介绍了抑制小目标红外图像背景噪声的三种方法：空域高通滤波法、频域高通滤波法和自适应门限背景抑制法,并对各种方法的抑制结果进行了验证与分析。     

非相干耦合热电光伏光折变空间孤子对(英文)

基于无偏压光伏光折变晶体,理论研究了热电效应和光伏效应共同作用下的稳态空间孤子对.从非相干耦合波方程出发,推导了热电光伏孤子对的数值解;采用有限差分方法,数值模拟了各类孤子对的强度包络.结果表明:在自散焦光伏光折变晶体中,当正的热电场远大于光伏场时,亮-亮孤子对可以存在;当暗-暗或者灰-灰孤子对存在时,负的热电场可以增强自散焦效应,进而减小孤子的半峰全宽.各类孤子对的半峰全宽可以通过改变热电场的大小而加以操控.此外,非相干耦合热电光伏孤子对可以在一定条件下分别退化成热电孤子对或者光伏孤子对.借助晶体的热电效应,可以使光折变晶体LiNbO3从自散焦转变成自聚焦,从而灵活控制晶体中孤子对的特性.     

CMOS图像传感器时间域噪声分析及其应用研究

针对目前CMOS探测器的噪声研究绝大部分采取频率域的分析方法,所得的结果对于实际的探测器应用指导性不强。从时间域出发,构建了全新的探测器噪声模型,分析了在探测器的不同工作时期内噪声量大小同时间的关系。给出了探测器工作时序的优化准则,积分时间越长,系统的信噪比增加,输出信号电压值增大,等效输入端信噪比不变,系统的动态范围减小;复位时间越短,输出噪声量越小,但是图像的滞后效应也就越严重,在对弱小目标进行成像时应该尽可能地减少复位时间,增大积分时间,对于亮目标成像,应该增大复位时间,减少积分时间。     

Effect of Inelastic Scattering on the Electron Transport in a One-Dimensional Electron Interferorneter

Using the Büttiker formalism, we calculated the conductance of a one-dimensional interferometer,which consists of two quantum point contacts (QPC's) and a cavity sandwiched between them, in the presence of a phase randomizing scatterer located at the lower boundary of the cavity. The results show that a little inelastic scattering will completely destroy the formation of discrete zero-dimensional states, but the Aharonov-Bohrn-type oscillations can still take place, which are influenced by the inelastic scatterer.     

Simulation of Electronic Total-Reflection Effect in a Graphene Junction

We investigate theoretically the electron-reflection phenomenon in a graphene n＋n junction based on electron optics, where the local potential in the left n ＋ region is higher than that in the right n region. It is demonstrated numerically that electrons emitting from a point source in the n ＋ region will experience total internal reflection through the interface of the junction. The reflection becomes stronger and the transmission becomes weaker with decrease of the local potential in the right graphene ribbon. It is also found that when a nonideal interface is considered in the junction, the electron-reflection effect is enhanced due to interracial backseattering.     

Effect of Spontaneous and Carrier Noise on Mode-Locked Hybrid Soliton Pulse Source

Noise characteristics of mode-locked hybrid soliton pulse source (HSPS) where fiber Bragg grating is used as external cavity is presented. Model is based on time-domain solution of coupled-mode equations including spontaneous noise. Relative intensity noise (RIN) is calculated by using numerical solution of these equations. It is shown that inclusion of carrier density noise in the rate equations is necessary for the accurate analysis of noise in mode-locked lasers. It is also found that transform-limited pulses are not generated over a wide tuning range around the fundamental mode-locking frequency with spontaneous and carrier density noise sources if noise level is high. Therefore mode-locking range where transform limited pulses are obtained reduces.     

噪声对漂移室性能影响的模拟研究

利用蒙特卡罗方法模拟了漂移室的随机噪声和对其性能的影响,分别考虑了击中丝和非击中丝的时间道和电荷道的噪声,给出了径迹效率和动量分辨随噪声水平和噪声分布的变化情况.     

激光等离子体相互作用中超热电子输运过程的蒙特卡罗模拟

利用蒙特卡罗（Ｍｏｎｔｅ－Ｃａｒｌｏ）方法模拟了激光等离子体相互作用中所产生的超热电子在固体物质中的输运过程，模拟运算采用连续慢化（ＣＳＤＡ）和玻恩（Ｂｏｒｎ）近似的单一散射模型。文中给出了具有单能，束状分布的超热电子在双层固体靶中产生的Ｋα射线强度随表面靶层厚度的变化曲线。     

微通道板结构参数对噪声因子的影响

采用对比测量方法研究了微通道板结构参数,即开口比、板厚、电极深度、离子阻挡膜、输入增强膜对其噪声因子的影响。结果表明,开口比增大,噪声因子减小;板厚增加,噪声因子增加;输入电极深度增加,噪声因子增加;离子阻挡膜会增加噪声因子;输入增强膜会降低噪声因子。其中,离子阻挡膜对噪声因子的影响最大,板厚对噪声因子的影响最小。微通道板的结构参数不仅对噪声因子产生影响,而且对其他参数,如增益、均匀性等性能均会产生影响。要降低微通道板噪声因子,比较可行的方法是将微通道板的开口比提高到68%,在此基础上,再在微通道板的输入端制作一层高二次电子发射系数的MgO2输入增强膜,使微通道板的噪声因子接近1,从而达到理想微通道板的水平。