Electric field perturbation due to impurities in GaAs through single electron transistor

The present work shows the presence of inevitable impurities in the semi-insulating GaAs domains when one is developing a single electron transistor (SET) and alters the quantization mechanism of single electron tunneling through the island. It is also indicated that these impurities decrease the amount of energy required to change the number of electrons on the island, which leads to a drastic reduction of SET quality. A theoretical model has been presented for elucidating the I–V characteristics of GaAs nano-crystals. It is found that this proposed model fits well the experimental data.     

Spin polarization of two-dimensional electron system in different Laughlin states and around filling factor

The spin configuration of the ground state of a two-dimensional electron system is investigated for different FQHE states from an analysis of circular polarization of time-resolved luminescence. The method clearly distinguishes between fully spin polarized, partially spin polarized and spin unpolarized FQHE ground states. We demonstrate that FQHE states which are spin unpolarized or partially polarized at low magnetic fields become fully spin polarized at high fields. Temperature dependence of the spin polarization reveals a nonmonotonic behavior at . At and the electron system is found to be fully spin polarized. This result does not indicate the existence of any skyrmionic excitations in high magnetic field limit. However, at the observed spin depolarization of electron system at and becomes broader for lower magnetic fields, so that full spin polarization remains only in a small vicinity of . Such a behavior could be considered as a precursor of skirmionic depolarization, which would dominate for smaller ratios between Zeeman and Coulomb energies.We demonstrate that the spin polarization of 2D-electron system at and can be strongly affected by hyperfine interaction between electrons and optically spin-oriented nuclears. This result is due to the fact that hyperfine interaction can both enhance and suppress effective Zeeman splitting in fixed external magnetic field.     

Quantum antidot as an electrometer:Observation of fractional charge

In experiments on resonant tunneling through a quantum antidot in the quantum Hall (QH) regime, we observe periodic conductance peaks both versus magnetic field and a global gate voltage, i.e., electric field. Each conductance peak can be attributed to tunneling through a quantized antidot-bound state. The fact that the variation of the uniform electric field produces conductance peaks implies that the deficiency of the electrical charge on the antidot is quantized in units of charge of quasiparticles of surrounding QH condensate. The period in magnetic field gives the effective area of the antidot state through which tunneling occurs, the period in electric field (obtained from the global gate voltage) then constitutes a direct measurement of the charge of the tunneling particles. We obtain electron charge C in the integer QH regime, and quasiparticle charge C for the QH state.     

Electromechanical single electron transistor in strong dissipative structure

In the experiment of electromechanical single electron transistor, two tunneling junctions are not the same completely because of manufacturing processes or quantum effects. We simplify these complexities as an asymmetric-junction device with two unequal initial capacitances. A model system of a single electron transistor with strong dissipation is investigated, where the metal cluster of mechanical motion is coupled to drain and source electrodes. This semiclassical system considers the difference between drain capacitor and source capacitor, simulated by using Monte Carlo methods. The voltage regions are distributed into the efficient-shuttle region and the non-shuttle region by the shuttle mechanism of the island. A symmetric-junction device only works in the efficient-shuttle region. However, both kinds of mechanisms occur in an asymmetric-junction device, where we observe restrained currents and negative differential conductance phenomena.     

Single electron transistor with programmable tunnelling structure

A single electron transistor based on the ordered nanodot arrays was reported. The gold nanoparticles self-assembled in the ordered mesoporous silica thin films were used as the Coulomb islands. The Coulomb blockade and Coulomb oscillation are demonstrated at room temperature, and the SIMON simulations are consistent with the experimental results.     

Quantum Hall effect: The resistivity of a 2D electron gas—a thermodynamic approach

Based on a thermodynamic approach, we have calculated the resistivity of a 2D electron gas, assumed dissipationless in a strong quantum limit. Standard measurements, with extra current leads, define the resistivity caused by a combination of Peltier and Seebeck effects. The current causes heating (cooling) at the first (second) sample contacts, due to the Peltier effect. The contact temperatures are different. The measured voltage is equal to the Peltier effect-induced thermoemf which is linear in current. As a result, the resistivity is non-zero as I→0. The resistivity is a universal function of magnetic field and temperature, expressed in fundamental units h/e². The universal features of magnetotransport data observed in the experiment confirm our predictions.     

单电子晶体管电流解析模型及数值分析

本文首先建立单电子晶体管的电流解析模型, 然后将蒙特卡罗法与主方程法结合进行数值分析, 研究了栅极偏压、漏极偏压、温度与隧道结电阻等参数对器件特性的影响. 结果表明: 对于对称结, 库仑台阶随栅极偏压增大而漂移; 漏极电压增大, 库仑振荡振幅增强, 库仑阻塞则衰减; 温度升高将导致库仑台阶和库仑振荡现象消失. 对于非对称结, 源漏隧道结电阻比率增大, 库仑阻塞现象越明显. 关键词： 单电子晶体管 解析模型 蒙特卡罗法 主方程法     

SETMOS在蔡氏电路中的特性研究

利用拟合法简化了单电子晶体管与金属氧化物半导体混合结构器件SETMOS的负微分电阻特性方程,提出了由SETMOS设计多涡卷混沌电路的方法.理论上定性和定量地分析了负微分电阻特性对于多涡卷蔡氏电路平衡点的影响.经研究发现,多涡卷蔡氏电路混沌在非线性函数的各负斜率区中形成径向收缩、轴向拉伸的单向运动,而在各正斜率区中形成径向拉伸、轴向收缩的涡卷运动.这为进一步实现多涡卷电路及研究其复杂动力学行为提供了理论基础.     

Curved two-dimensional electron gases

A method is introduced which makes it possible to fabricate non-planar two-dimensional electron gases. Making use of the “epitaxial lift-off” process, patterned, gated and contacted heterostructures are transferred from their crystalline substrate onto small glass tubes with diameters of a few millimeters. The transport properties of two-dimensional electron gases inside these curved semiconductor films are characterized by low-temperature magnetoresistance measurements. In the longitudinal resistance we find weak Shubnikov–de Haas oscillations, which are periodic in B⁻¹. The transverse resistance exhibits well-developed quantum Hall plateaus at low magnetic fields. At high fields, we observe a pronounced breakdown of the Hall effect. The experimental results are compared with simple theoretical models.     

Observations of nascent superfluidity in a bilayer two-dimensional electron system at

Single-layer longitudinal and Hall resistances have been measured in a bilayer two-dimensional electron system at ν_T=1 with equal but oppositely directed currents flowing in the two layers. At small effective layer separation and low temperature, the bilayer system enters an interlayer coherent state expected to exhibit superfluid properties. We detect this nascent superfluidity through the vanishing of both resistances as the temperature is reduced. This corresponds to the counterflow conductivity rising rapidly as the temperature falls, reaching by . This supports the prediction that the ground state of this system is an excitonic superfluid.     

Negative Coulomb drag in coupled wire and quantum dot system

We measure the Coulomb drag between parallel split-gate quantum wires with a quantum dot embedded in one of the two wires (drive wire). We observe negative Coulomb drag when a Coulomb oscillation peak appears in the drive wire and the conductance of the other wire (drag wire) is slightly below the first plateau. This indicates that correlation holes are dragged in the drag wire by single electron tunneling through the quantum dot in the drive wire. The drag is only promoted in the drag wire near the barrier regions of the dot, and low compressibility of the drag wire is necessary for the negative drag to occur.     

SETMOS实现多涡卷蔡氏电路的研究

基于细胞神经网络结构,利用具有负微分电阻特性的单电子晶体管与金属氧化物半导体混合结构器件SETMOS实现了多涡卷蔡氏电路.对该电路系统的基本动力学特性(如相图、分岔图、Lyapunov指数、Poincaré映射和功率谱)进行了理论分析和数值仿真,并利用电路仿真实验验证了该三阶四涡卷蔡氏电路设计的正确性和可行性.研究结果表明,SETMOS的负微分电阻特性决定着多涡卷蔡氏电路的复杂动力学行为,而且所设计的电路结构简单易行.     

An investigation of the gate dependence in an electronic Aharonov–Bohm interferometer

In this study we have obtained the dependence of the electronic distribution on the gate shape and the applied gate voltage in a quantum Hall effect based Aharonov–Bohm interferometer using a method presented in our previous studies. We have discussed the relation between the distribution of incompressible strips and observation of Aharonov–Bohm oscillations. We have obtained the distributions of the incompressible strips for various gate voltages and have shown that a gate potential sweep and a magnetic field sweep would be equivalent. Our calculations also predict that for wider gate separations it is possible observe a silent region while sweeping the magnetic field or the gate voltage.     

The 2D Kramers–Dirac oscillator

The Dirac oscillator was initially introduced as a Dirac operator which is linear in momentum and coordinate variables. In contrast to the usual 2D Dirac oscillator, the 2D Kramers–Dirac oscillator admits the time-reversal symmetry, which is a reason for the present nomenclature. It is shown that there exists a family of eigenstates associated with an eigenvalue linear in the control parameter, and the eigenvalue in question goes down from positive values to negative values as the parameter varies in the positive direction. The other eigenvalues are broken up into two bands, positive and negative. The 2D Dirac and the 2D Kramers–Dirac oscillators are compared in their physical grounds and in their spectral structure from the viewpoint of the time-reversal symmetry.     

Boundary conformal field theory and tunneling of edge quasiparticles in non-Abelian topological states

We explain how (perturbed) boundary conformal field theory allows us to understand the tunneling of edge quasiparticles in non-Abelian topological states. The coupling between a bulk non-Abelian quasiparticle and the edge is due to resonant tunneling to a zero mode on the quasiparticle, which causes the zero mode to hybridize with the edge. This can be reformulated as the flow from one conformally invariant boundary condition to another in an associated critical statistical mechanical model. Tunneling from one edge to another at a point contact can split the system in two, either partially or completely. This can be reformulated in the critical statistical mechanical model as the flow from one type of defect line to another. We illustrate these two phenomena in detail in the context of the ν=5/2 quantum Hall state and the critical Ising model. We briefly discuss the case of Fibonacci anyons and conclude by explaining the general formulation and its physical interpretation.     

Renormalized dynamics in charge qubit measurements by a single electron transistor

We investigate charge qubit measurements using a single electron transistor, with focus on the backaction-induced renormalization of qubit parameters. It is revealed the renormalized dynamics leads to a number of intriguing features in the detector's noise spectra, and therefore needs to be accounted for to properly understand the measurement result. Noticeably, the level renormalization gives rise to a strongly enhanced signal-to-noise ratio, which can even exceed the universal upper bound imposed quantum mechanically on linear-response detectors.     

Landau levels in a novel two-dimensional electron system interacting with charged quantum dots

Landau levels have been theoretically investigated in a two-dimensional electron gas near a quantum dot (QD) layer. By a diagrammatical method, we have formulated the self-energy for the Landau level and deduced its relation to the AC conductivity σ_loc(ω) in the QD layer. As an example, we have examined the density of states in the case where σ_loc(ω) is described by Aω^S(S=0.8). It is found that the Landau levels are broadened due to the interaction with the localized electrons in the QDs.     

Transport studies of localized and extended states of a two-dimensional electron gas in low magnetic fields

We have observed the quantum Hall effect in a high mobility two-dimensional electron gas to filling factors up to 80 at 0.3 K. This demonstrates the presence of both localized and extended states at low field, and explains the failure of the standard semi-classical analysis of Shubnikov–de Haas (SdH) oscillations in this regime. We go on to derive a general expression for the conductivity due to rectangular bands of extended states, and show that the observed temperature dependence of the SdH oscillations is consistent with this picture. An analysis of the oscillations using this expression reveals the predicted levitation of the extended states as the magnetic field is reduced.     

Disappearance of quantum chaos in coupled chaotic quantum dots

Statistical properties of the single electron levels confined in the semiconductor (InAs/GaAs, Si/SiO₂) double quantum dots (DQDs) are considered. We demonstrate that in the electronically coupled chaotic quantum dots the chaos with its level repulsion disappears and the nearest neighbor level statistics becomes Poissonian. This result is discussed in the light of the recently predicted “huge conductance peak” by R.S. Whitney et al. [Phys. Rev. Lett. 102 (2009) 186802] in the mirror symmetric DQDs.