Fabrication of multilayered Ge nanocrystals embedded in SiOxGeNy films

Multilayered Ge nanocrystals embedded in SiO_xGeN_y films have been fabricated on Si substrate by a (Ge + SiO₂)/SiO_xGeN_y superlattice approach, using a rf magnetron sputtering technique with a Ge + SiO₂ composite target and subsequent thermal annealing in N₂ ambient at 750 °C for 30 min. X-ray diffraction (XRD) measurement indicated the formation of Ge nanocrystals with an average size estimated to be 5.4 nm. Raman scattering spectra showed a peak of the Ge-Ge vibrational mode downward shifted to 299.4 cm⁻¹, which was caused by quantum confinement of phonons in the Ge nanocrystals. Transmission electron microscopy (TEM) revealed that Ge nanocrystals were confined in (Ge + SiO₂) layers. This superlattice approach significantly improved both the size uniformity of Ge nanocrystals and their uniformity of spacing on the ‘Z’ growth direction.     

Structural and electrical transport properties of ZnxFe3−xO4 thin film deposited on Si (1 1 1) by pulsed-laser deposition

Polycrystalline thin films of Fe_3−xZn_xO₄ (x = 0.0, 0.01 and 0.02) were prepared by pulsed-laser deposition technique on Si (1 1 1) substrate. X-ray diffraction studies of parent as well as Zn doped magnetite show the spinel cubic structure of film with (1 1 1) orientation. The order–disorder transition temperature for Fe₃O₄ thin film with thickness of 150 nm are at 123 K (Si). Zn doping leads to enhancement of resistivity by Zn²⁺ substitution originates from a decrease of the carrier concentration, which do not show the Verwey transition. The Raman spectra for parent Fe₃O₄ on Si (1 1 1) substrate shows all Raman active modes for thin films at energies of T_2g¹, T_2g³, T_2g², and A_1g at 193, 304, 531 and 668 cm⁻¹. It is noticed that the frequency positions of the strongest A_1g mode are at 668.3 cm⁻¹, for all parent Fe₃O₄ thin film shifted at lower wave number as 663.7 for Fe_2.98Zn_0.02O₄ thin film on Si (1 1 1) substrate. The integral intensity at 668 cm⁻¹ increased significantly with decreasing doping concentration and highest for the parent sample, which is due to residual stress stored in the surface.     

Ferromagnetism in amorphous Ge1−xMnx grown by low temperature vapor deposition

Magnetic properties of amorphous Ge_1−xMn_x thin films were investigated. The thin films were grown at 373 K on (100) Si wafers by using a thermal evaporator. Growth rate was ∼35 nm/min and average film thickness was around 500 nm. The electrical resistivities of Ge_1−xMn_x thin films are 5.0×10⁻⁴∼100 Ω cm at room temperature and decrease with increasing Mn concentration. Low temperature magnetization characteristics and magnetic hysteresis loops measured at various temperatures show that the amorphous Ge_1−xMn_x thin films are ferromagnetic but the ferromagnetic magnetizations are changing gradually into paramagnetic as increasing temperature. Curie temperature and saturation magnetization vary with Mn concentration. Curie temperature of the deposited films is 80-160 K, and saturation magnetization is 35-100 emu/cc at 5 K. Hall effect measurement at room temperature shows the amorphous Ge_1−xMn_x thin films have p-type carrier and hole densities are in the range from 7×10¹⁷ to 2×10²² cm⁻³.     

Synthesis, characterization and electromagnetic properties of Fe1−xCox alloy flower-like microparticles

Fe_1−xCo_x alloy microparticles with size 3-5 μm and novel flower-like shapes were prepared by a simple low temperature reduction method. The electromagnetic properties for the paraffin matrix composites containing Fe_1−xCo_x alloy microparticles were measured using a vector network analyzer in the 2-18 GHz frequency range. As a consequence of large surface- and shape-anisotropy energy for the flower-like shaped 3D microstructures, the strong natural resonance around 8-12 GHz and remarkable dielectric relaxation were observed in the complex permittivity and permeability spectrum, which are dominant in the enhanced electromagnetic wave absorption (EMA) performance. It was found that both the electromagnetic parameters of complex permittivity and permeability and the intensity and location of absorption band were remarkably dependent on the Co/Fe molar ratio. The enhanced EMA performance was obtained in these Fe_1−xCo_x-paraffin (x=0.4, 0.5, and 0.6) composites system. For the Fe_0.5Co_0.5 alloy, the reflection loss (RL) exceeding −20 dB was obtained in the broad frequency range of 5.4-18 GHz with a thin sample thickness of between 1.0 and 2.9 mm. In particular, an optimal RL of −59 dB was obtained at 3.61 GHz with a thin thickness of 3.6 mm for the Fe_0.4Co_0.6 sample. The Fe_1−xCo_x alloy microparticles may be attractive candidates for applications of microwave absorption materials with a wide frequency range and strong absorption in the high frequency region.     

Preparation and photoluminescence characteristics of Eu-doped MgAl1.8Y0.2O4 nanocrystals

A simple combustion route was employed for the preparation of Eu³⁺-doped MgAl_1.8Y_0.2−xO₄ nanocrystals using metal nitrates as precursors and urea as a fuel in a preheated furnace at 500 °C. The powders thus obtained were then fired at 1000 °C for 3 h to get better luminescent properties. The incorporation of Eu³⁺ activator in these nanocrystals was checked by luminescence characteristics. These nanocrystals displayed bright red color on excitation under 254 nm UV source. The main emission peak was assigned to the transition [⁵D₀→⁷F₂] at 615 nm. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) studies were carried out to understand surface morphological features and the particle size. Crystal structures of the nanocrystals were investigated by the X-ray diffraction (XRD) technique. The crystallite size of the as-prepared nanocrystals was around 29 nm, which was evaluated from the broad XRD peaks. The crystallite size increased to ∼45 nm on further heat treatment at 1000 °C.     

Positive exchange bias in a Ni80Fe20/NixFe1−xO thin-film bilayer

We have measured positive exchange bias in a Ni₈₀Fe₂₀/Ni_xFe_1−xO thin-film nanocrystallite system. A series of solid solution Ni_xFe_1−xO 40 nm thick films capped with 25 nm thick Ni₈₀Fe₂₀ were deposited using a range of %O₂/Ar bombardment energies (i.e. End-Hall voltages). Proper tuning of the deposition conditions results in a Ni₈₀Fe₂₀/Ni_xFe_1−xO (30%O₂/Ar) based bilayer that exhibits a positive exchange bias loop shift of H_ex∼60 Oe at 150 K.     

Preparation of five-layered Si/SixGe1−x nano-films by RF helicon magnetron sputtering

Five-layered Si/Si_xGe_1−x films on Si(1 0 0) substrate with single-layer thickness of 30 nm, 10 nm and 5 nm, respectively were prepared by RF helicon magnetron sputtering with dual targets of Si and Ge to investigate the feasibility of an industrial fabrication method on multi-stacked superlattice structure for thin-film thermoelectric applications. The fine periodic structure is confirmed in the samples except for the case of 5 nm in single-layer thickness. Fine crystalline Si_xGe_1−x layer is obtained from 700 °C in substrate temperature, while higher than 700 °C is required for Si good layer. The composition ratio (x) in Si_xGe_1−x is varied depending on the applied power to Si and Ge targets. Typical power ratio to obtain x = 0.83 was 7:3, Hall coefficient, p-type carrier concentration, sheet carrier concentration and mobility measured for the sample composed of five layers of Si (10 nm)/Si_0.82Ge_0.18 (10 nm) are 2.55 × 10⁶ /°C, 2.56 × 10¹² cm⁻³, 1.28 × 10⁷ cm⁻², and 15.8 cm⁻²/(V s), respectively.     

Production of bulk dilute ferromagnetic semiconductor by mechanical milling

We tried to prepare the bulk dilute ferromagnetic semiconductor (DMS) by mechanical milling (MM). Experimental results were as following: (1) The observation of X-ray diffraction and transmitting electron microscopy showed that the particle diameter of host ZnO powder were reduced to about 10 nm by MM. (2) The MM for the mixtures of V₂O₅/ZnO or γ-Fe₂O₃/ZnO realizes the V- or Fe-doped ZnO nano-powders. (3) The values of magnetization under the field of 5 kOe were nearly saturated to 0.8×10⁻³ to 3×10⁻³ μ_B/V-ion for V_xZn_1−xO (x=0.05, 0.1 and 0.2), and 0.2–0.3 μ_B/Fe-ion for Fe_xZn_1−xO (x=0.05 and 0.1) at room temperature. The above results show that the ferromagnetic DMS powder of V_xZn_1−xO and Fe_xZn_1−xO were successfully prepared by MM method.     

Influence of the concentration in Fe-doped BaTiO3 on magnetoelectric couping of layered composites BaTi1−xFexO3–Tb1−yDyyFe2−z

Perovskites BaTi_1−xFe_xO₃ has been synthesized with the concentration x ranging from 0.01 to 0.02. Their transformation point of ferroelectric to paraelectric and the corresponding latent heat of the phase transformation were observed to decrease with increasing the doping level of Fe³⁺. Bonded layered composites BaTi_1−xFe_xO₃–Tb_1−yDy_yFe_2−z have been fabricated and their magnetoelectric effect has been investigated. The sample containing a layer of perovskite BaTi_0.985Fe_0.015O₃ was found to show the maximum transverse ME voltage coefficient, which is about 1422 mV Oe⁻¹ cm⁻¹ under a magnetic field of 1580 Oe, in these bilayers. Analysis shows that the Fe-doped BaTiO₃ with doping level at about 1.5% should have largest piezoelectric coefficient in these ceramics BaTi_1−xFe_xO₃.     

Structural characterization and ytterbium spectroscopy in Sc2O3 nanocrystals

Ytterbium-doped scandium oxide nanocrystals measuring less than 25 nm with compositions of Sc_2−xYb_xO₃ (x=0.001-1) were prepared using the modified Pechini method. The Yb:Sc₂O₃ nanocrystals were obtained by calcination at low temperature such as 1073 K for 2 h. X-ray powder diffraction (XRD) and transmission electronic microscopy (TEM) were used to perform the structural characterization of nanocrystals; these studies indicated that the nanocrystals have high crystalline quality with cubic structure and Ia3¯ space group. The morphology and particle size were studied using electron microscopy. A detailed study of the effect of the nanodimension and the ytterbium concentration on the spectroscopic characteristics of Yb³⁺ as an active ion was carried out in terms of optical absorption, optical emission and fluorescence decay time at room and low temperature.     

A new blue-emitting phosphor, SrZnO2:Pb, synthesized by the adipic acid templated sol-gel route

A new blue-emitting phosphor, Sr_1−xPb_xZnO₂, was prepared by a novel adipic acid templated sol-gel route. Photoluminescence and crystalline properties were investigated as functions of calcination temperatures and the Pb²⁺ doping levels. It was found that under UV excitation with a wavelength of 283 or 317 nm, the phosphors gave emission from 374 to 615 nm with a peak centered at 451 nm. This broad-band was composed of UV and the visible range was attributed to an impurity-trapped exciton-type emission. The maximum emission intensity of the Sr_1−xPb_xZnO₂ phosphors occurred at a Pb concentration of x=0.01. The decay time was observed to be ∼33 ms for the compound doped with 1 mol% Pb prepared at 1000 °C. Diffuse reflectance spectra revealed the characteristic absorption peaks and the bandgap energy of SrZnO₂ was found to be 3.4 eV. SEM analysis indicated that phosphor particles have an irregularly rounded morphology and the average particle size was found to be approximately 1 μm.     

Dielectric behavior of spin-deposited nanocrystalline nickel-zinc ferrite thin films processed by citrate-route

Nanocrystalline nickel-zinc ferrite thin films with the general formula Ni_1−xZn_xFe₂O₄, where x=0.0, 0.2, 0.4 and 0.6 were fabricated via a chemical route known as the citrate precursor route. These films were spin-deposited on indium-tin oxide coated glass, fused quartz and amorphous Si-wafer substrates, and annealed at various temperatures up to 650 °C. The films annealed below 400 °C were found to be X-ray amorphous, while the films annealed at and above 400 °C were polycrystalline exhibiting a single-phase spinel structure. The average grain size of the films evaluated by transmission electron microscopy, is found to be in the range 4-8.5 nm. The room temperature DC resistivity of the films is in the range 10³-10⁷ Ω m. Dielectric constant and dielectric loss were measured in the frequency range 100 Hz-1 MHz. Dielectric constant of the films is found to lie between 25 and 44, while the loss factor is if the order of 10⁻². The higher values of the dielectric constant for films having higher zinc concentration are attributable to the enhanced hopping between Fe²⁺ and Fe³⁺ ions in these samples. The M-H hysteresis measurement of the nickel ferrite thin films annealed at 650 °C showed narrow hysteresis loop—a characteristic of soft ferromagnetic material.     

Magnetic and Microwave Absorbing Properties of Electrospun Ba(1−x)LaxFe12O19 Nanofibers

Ba_(1−x)La_xFe₁₂O₁₉ (0.00≤x≤0.10) nanofibers were fabricated via the electrospinning technique followed by heat treatment at different temperatures for 2 h. Various characterization methods including scanning electron microscopy (SEM), X-ray diffraction (XRD), vibrating sample magnetometer (VSM), and microwave vector network analyzer were employed to investigate the morphologies, crystalline phases, magnetic properties, and complex electromagnetic parameters of nanofibers. The SEM images indicate that samples with various values of x are of a continuous fiber-like morphology with an average diameter of 110±20 nm. The XRD patterns show that the main phase is M-type barium hexaferrite without other impurity phases when calcined at 1100 °C. The VSM results show that coercive force (H_c) decreases first and then increases, while saturation magnetization (M_s) reveals an increase at first and then decreases with La³⁺ ions content increase. Both the magnetic and dielectric losses are significantly enhanced by partial substitution of La³⁺ for Ba²⁺ in the M-type barium hexaferrites. The microwave absorption performance of Ba_0.95La_0.05Fe₁₂O₁₉ nanofibers gets significant improvement: The bandwidth below −10 dB expands from 0 GHz to 12.6 GHz, and the peak value of reflection loss decreases from −9.65 dB to −23.02 dB with the layer thickness of 2.0 mm.     

Effect of Fe substitution on magnetocaloric effect in La0.7Sr0.3Mn1−xFexO3 (0.05≤x≤0.20)

We have studied the effect of Fe substitution on magnetic and magnetocaloric properties in La_0.7Sr_0.3Mn_1−xFe_xO₃ (x=0.05, 0.07, 0.10, 0.15, and 0.20) over a wide temperature range (T=10-400 K). It is shown that substitution by Fe gradually decreases the ferromagnetic Curie temperature (T_C) and saturation magnetization up to x=0.15 but a dramatic change occurs for x=0.2. The x=0.2 sample can be considered as a phase separated compound in which both short-range ordered ferromagnetic and antiferromagnetic phases coexist. The magnetic entropy change (−ΔS_m) was estimated from isothermal magnetization curves and it decreases with increase of Fe content from 4.4 J kg⁻¹ K⁻¹ at 343 K (x=0.05) to 1.3 J kg⁻¹ K⁻¹ at 105 K (x=0.2), under ΔH=5 T. The La_0.7Sr_0.3Mn_0.93Fe_0.07O₃ sample shows negligible hysteresis loss, operating temperature range over 60 K around room temperature with refrigerant capacity of 225 J kg⁻¹, and magnetic entropy of 4 J kg⁻¹ K⁻¹ which will be an interesting compound for application in room temperature refrigeration.     

Structure and magnetic properties of (Nd,Dy)16(Fe,Co)76−xTixB8 powders prepared by mechanical alloying

Nanocrystalline (Nd,Dy)₁₆(Fe,Co)_76−xTi_xB₈ magnets were prepared by mechanical alloying and respective heat treatment at 973–1073 K/30–60 min. An addition of 0.5 at % of Ti results in an increase of coercivity from 796 to 1115 kA m⁻¹. Partial substitution of Nd by Dy results in an additional increase of coercivity up to 1234 kA m⁻¹. Mössbauer investigations shows that for x?1 the (Nd,Dy)₁₆(Fe,Co)_76−xTi_xB₈ powders are single phase. For higher Ti contents (x>1) the mechanically alloyed powders heat treated at 973 K are no more single phase, and the coercivity decreases due to the presence of an amorphous phase. A heat treatment at a higher temperature (1073 K) for longer time (1 h) results in the full recrystallisation of powders. The mean hyperfine field of the Nd₂Fe₁₄B phase decreases for titanium contents of 0?x?1, and remains constant for x>1. This indicates that the Ti content in the Nd₂Fe₁₄B phase reaches its maximum value.     

Structure and RT ferromagnetism of Fe-doped AlN films

Al_1−xFe_xN_1−δ thin films with 0 ≤ x ≤ 13.6% were deposited by dc magnetron co-sputtering at room temperature (RT). It is found that Fe atom will substitutes the Al atom in the lattice when x ≤ 1.2%, while it will embed into the interstice of the lattice at larger Fe content. RT ferromagnetism was observed in all doped samples. A maximum saturated magnetization 2.81 emu/cm³ of the film is found to be induced by AlFeN ternary alloy when x = 1.2%.     

Band gap energy and bowing parameter of In-rich InAlN films grown by magnetron sputtering

The crystal structure, band gap energy and bowing parameter of In-rich In_xAl_1−xN (0.7 < x < 1.0) films grown by magnetron sputtering were investigated. Band gap energies of In_xAl_1−xN films were obtained from absorption spectra. Band gap tailing due to compositional fluctuation in the films was observed. The band gap of the as-grown InN measured by optical absorption method is 1.34 eV, which is larger than the reported 0.7 eV for pure InN prepared by molecular beam epitaxy (MBE) method. This could be explained by the Burstein-Moss effect under carrier concentration of 10²⁰ cm⁻³ of our sputtered films. The bowing parameter of 3.68 eV is obtained for our In_xAl_1−xN film which is consistent with the previous experimental reports and theoretical calculations.     

Structural and surface properties of Si1−xGex thin films obtained by reduced pressure CVD

This paper investigates the structure and surface characteristics, and electrical properties of the polycrystalline silicon-germanium (poly-Si_1−xGe_x) alloy thin films, deposited by vertical reduced pressure CVD (RPCVD) in the temperature range between 500 and 750 °C and a total pressure of 5 or 10 Torr. The samples exhibited a very uniform good quality films formation, with smooth surface with rms roughness as low as 7 nm for all temperature range, Ge mole fraction up to 32% (at 600 °C), textures of 〈2 2 0〉 preferred orientation at lower temperatures and strong 〈1 1 1〉 at 750 °C, for both 5 and 10 Torr deposition pressures. The ³¹P⁺ and ¹¹B⁺ doped poly-Si_1−xGe_x films exhibited always lower electrical resistivity values in comparison to similar poly-Si films, regardless of the employed anneal temperature or implantat dose. The results indicated also that poly-Si_1−xGe_x films require much lower temperature and ion implant dose than poly-Si to achieve the same film resistivity. These characteristics indicate a high quality of obtained poly-Si_1−xGe_x films, suitable as a gate electrode material for submicron CMOS devices.     

Enhancing upconversion emissions of NaTm0.02YbxY0.98−xF4 nanocrystals through increasing Yb doping

By increasing the content of Yb³⁺ ions from 20% to 98% in NaTm_0.02Yb_xY_0.98−xF₄ (x=0.2−0.98) nanocrystals with size about 10 nm, the intensities of near infrared (800 nm) and blue (470 nm) upconversion (UC) luminescence can be enhanced by orders of 45 and 49 times, respectively, under 970 nm diode laser excitation. Pump power dependence illustrated that the 800 and 470 nm radiations are still two- and three-photon processes, respectively. TEM imaging showed that the enhancement is not from the change of the crystal size. Steady-state equation and the measured lifetimes indicated that the enhanced 800 nm radiations can induce the enhancement of the 470 nm emissions, which is in good agreement with the experimental data.     

High temperature ferromagnetism of the vacuum-annealed (In1−xFex)2O3 powders

(In_1−xFe_x)₂O₃ (x = 0.02, 0.05, 0.2) powders were prepared by a solid state reaction method and a vacuum annealing process. A systematic study was done on the structural and magnetic properties of (In_1−xFe_x)₂O₃ powders as a function of Fe concentration and annealing temperature. The X-ray diffraction and high-resolution transmission electron microscopy results confirmed that there were not any Fe or Fe oxide secondary phases in vacuum-annealed (In_1−xFe_x)₂O₃ samples and the Fe element was incorporated into the indium oxide lattice by substituting the position of indium atoms. The X-ray photoelectron spectroscopy revealed that both Fe²⁺ and Fe³⁺ ions existed in the samples. Magnetic measurements indicated that all samples were ferromagnetic with the magnetic moment of 0.49-1.73 μ_B/Fe and the Curie temperature around 783 K. The appearance of ferromagnetism was attributed to the ferromagnetic coupling of Fe²⁺ and Fe³⁺ ions via an electron trapped in a bridging oxygen vacancy.