Investigation of spectroscopic properties and thermal stability of Er/Yb-co-doped Bi2O3-B2O3-Ga2O3 glasses

A series of Er³⁺/Yb³⁺-co-doped 60Bi₂O₃-(40−x) B₂O₃ -xGa₂O₃ (BBGA x=0, 4, 8, 12, 16 mol%) glasses have been prepared. The absorption spectra, emission spectra, fluorescence lifetime of Er³⁺:⁴I_13/2 level and thermal stability were measured and investigated. Three Judd-Ofelt intensity parameters Ω_t (t=2,4,6) (Ω₂=(4.67-5.93)×10⁻²⁰ cm², Ω₄=(1.50-1.81)×10⁻²⁰ cm², Ω₆=(0.92-1.17)×10⁻²⁰ cm²) of Er³⁺ ions were calculated by Judd-Ofelt theory. It is found that the Ω₆ first increases with the increase of Ga₂O₃ content from 0 to 8 mol% and then decreases, which is mainly affected by the number of non-bridging oxygen ions of the glass network. The high peak of stimulated emission cross-section () of Er³⁺: ⁴I_13/2→⁴I_15/2 transition were obtained according to McCumber theory and broad full width at half maximum (FWHM=69-76 nm) of the ⁴I_13/2→⁴I_15/2 transition of Er³⁺ ions were measured. The results indicate that these new BBGA glasses can be used as a candidate host material for potential broadband optical amplifiers.     

Concentration quenching in erbium-doped tellurite glasses

Er₂O₃-doped TeO₂-ZnO-La₂O₃ modified tellurite glasses were prepared by the conventional melt-quenching method, and the Er³⁺: ⁴I_13/2→⁴I_15/2 fluorescence properties have been studied for different Er³⁺ concentrations. Infrared spectra were measured in order to estimate the exact content of OH⁻ groups in samples. Based on the electric dipole-dipole interaction theory, the interaction parameter, C_Er,Er, for the migration rate of Er³⁺: ⁴I_13/2→⁴I_13/2 in modified tellurite glass was calculated. Finally, the concentration quenching mechanism using a model based on energy transfer and quenching by hydroxyl (OH⁻) groups was presented.     

Investigation of energy band gap and optical properties of cubic CdS epilayers

High quality cubic CdS epilayers were grown on GaAs (1 0 0) substrates by the hot-wall epitaxy method. The crystal structure of the grown epilayers was confirmed to be the cubic structure by X-ray diffraction patterns. The optical properties of the epilayers were investigated in a wide photon energy range between 2.0 and 8.5 eV using spectroscopic ellipsometry (SE) and were studied in the transmittance spectra at a wavelength range of 400-700 nm at room temperature. The data obtained by SE were analyzed to find the critical points of the pseudodielectric function spectra, 〈?(E)〉 = 〈?₁(E)〉 + i〈?₂(E)〉, such as E₀, E₁, E₂, E^′₀, and E^′₁ structures. In addition, the optical properties related to the pseudodielectric function of CdS, such as the absorption coefficient α(E), were investigated. All the critical point structures were observed, for the first time, at 300 K by ellipsometric measurements for the cubic CdS epilayers. Also, the energy band gap was determined by the transmittance spectra of the free-standing film, and the results were compared with the E₀ structure obtained by SE measurement.     

Effects of substrate temperature and Zn addition on the properties of Al-doped ZnO films prepared by magnetron sputtering

Al-doped ZnO (AZO) films prepared at different substrate temperature and AZO films with intentional Zn addition (ZAZO) during deposition at elevated substrate temperature were fabricated by radio frequency magnetron sputtering on glass substrate, and the resulting structural, electrical, optical properties together with the etching characteristics and annealing behavior were comparatively examined. AZO films deposited at 150 °C showed the optimum electrical properties and the largest grain size. XPS analysis revealed that AZO films deposited at elevated temperature of 450 °C contained large amount of Al content due to Zn deficiency, and that intentional Zn addition during deposition could compensate the deficiency of Zn to some extent. It was shown that the electrical, optical and structural properties of ZAZO films were almost comparable to those of AZO film deposited at 150 °C, and that ZAZO films had much smaller etching rate together with better stability in severe annealing conditions than AZO films due possibly to formation of dense structure.     

Composition dependent frequency upconversion luminescence in Er-doped oxychloride germanate glasses

Er³⁺-doped oxychloride germanate glasses have been synthesized by conventional melting and quenching method. Structural and thermal stability properties were obtained based on the Raman spectra and differential thermal analysis, indicating that PbCl₂ plays an important role in the formation of glass network and has an important influence on the maximum phonon energy and thermal stability of host glasses. Intense green and red emissions centered at 525, 546, and 657 nm, corresponding to the transitions ²H_11/2→⁴I_15/2, ⁴S_3/2→⁴I_15/2, and ⁴F_9/2→⁴I_15/2, respectively, were observed at room temperature. With increasing PbCl₂ content, the intensity of green (525 and 546 nm) emissions increases significantly, while the red (657 nm) emission increases slowly. The results indicate that PbCl₂ has more influence on the green emissions than the red emission in oxychloride germanate glasses. The possible upconversion luminescence mechanisms has also been estimated and discussed.     

Opto-electrical properties of amorphous carbon thin film deposited from natural precursor camphor

A simple thermal chemical vapor deposition technique is employed for the pyrolysis of a natural precursor “camphor” and deposition of carbon films on alumina substrate at higher temperatures (600-900 °C). X-ray diffraction measurement reveals the amorphous structure of these films. The carbon films properties are found to significantly vary with the deposition temperatures. At higher deposition temperature, films have shown predominately sp²-bonded carbon and therefore, higher conductivity and lower optical band gap (Tauc gap). These amorphous carbon (a-C) films are also characterized with Raman and X-ray photoelectron spectroscopy. In addition, electrical and optical properties are measured. The thermoelectric measurement shows these as-grown a-C films are p-type in nature.     

Influence of size effect and sputtering conditions on the crystallinity and optical properties of ZnO thin films

The effects of the thickness variation, substrate type and annealing on the crystallinity parameters, luminescent and optical properties of the zinc oxide (ZnO) thin films were reported. The thin films were deposited on the glass and the amorphous quartz substrates by the standard RF-magnetron sputtering method using ZnO targets in the argon atmosphere. It has been found that the films deposited on the glass substrate manifest a clear size effect. Both the structural and the optical parameters show clearly minima on their thickness dependences. It has been shown that annealing of the comparatively thick ZnO films leads to increase of the crystallite sizes that are followed by a considerable rise of the cathodoluminescence intensity. The corresponding model of the crystallite growth is proposed.     

Influence of B2O3 to the inhomogeneous broadening and spectroscopic properties of Er/Yb codoped fluorophosphate glasses

In a three-components fluorophosphate glass system, the introduction of H₃BO₃ brings some valuable influence to the spectroscopic and thermal properties of the glasses. With H₃BO₃ increases from 2 to 20 mol%, Ω₆, S_ed4I13/2, FWHM, T_g and fluorescence lifetime change from 3.21×10⁻²⁰ cm², 1.77×10⁻²⁰ cm², 45 nm, 480 °C and 8.8 ms to 4.66×10⁻²⁰ cm², 2.11×10⁻²⁰ cm², 50 nm, 541 °C and 7.4 ms, respectively. σ_abs, σ_emi, FWHM×τ_f×σ_emi has a maximum when H₃BO₃ is 11 mol%. T_g and T_x−T_g increases with H₃BO₃ introduction. Results showed that in fluorophosphate glasses, proper amount of B₂O₃ can be used as a modifier to suppress upconversion and improve spectroscopic properties, broadband property and crystallization stability of the glasses while keeps the fluorescence lifetime relatively high.     

Characteristics of ZnO:Al thin films co-doped with hydrogen and fluorine

Fluorine and hydrogen co-doped ZnO:Al (AZO) films were prepared by radio frequency (rf) magnetron sputtering of ZnO targets containing 1 wt.% Al₂O₃ on Corning glass at substrate temperature of 150 °C with Ar/CF₄/H₂ gas mixtures, and the structural, electrical and optical properties of the as-deposited and the vacuum-annealed films were investigated. In as-deposited state, films with fairly low resistivity of 3.9-4 × 10⁻⁴ Ω cm and very low absorption coefficient below 900 cm⁻¹ when averaged in 400-800 nm could be fabricated. After vacuum-heating at 300 °C, the minimum resistivity of 2.9 × 10⁻⁴ Ω cm combined with low absorption loss in visible region, which enabled the figure of merit to uplift as high as 4 Ω⁻¹, could be obtained for vacuum-annealed film. It was shown that, unlike hydrogenated ZnO films which resulted in degradation upon heating in vacuum at moderately high temperature, films with fluorine addition could yield improved electrical properties mostly due to enhanced Hall mobility while preserving carrier concentration level. Furthermore, stability in oxidizing environment could be improved by fluorine addition, which was ascribed to the filling effect of dangling bonds at the grain boundaries. These results showed that co-doping of hydrogen and fluorine into AZO films with low Al concentration could be remarkably compatible with thin film solar cell applications.     

Transparent and conducting Zn-Sn-O thin films prepared by combinatorial approach

Zn-Sn-O (ZTO) films with continuous compositional gradient of Sn 16-89 at.% were prepared by co-sputtering of two targets of ZnO and SnO₂ in a combinatorial method. The resistivities of the ZTO films were severely dependent on oxygen content in sputtering gas and Zn/Sn ratio. Except for the films with Sn 16 at.%, all the as-prepared films were amorphous and maintaining the stable amorphous states up to the annealing temperature of 450 °C. Annealing at 650 °C resulted in crystallization for all the composition, in which ZnO, Zn₂SnO₄, ZnSnO₃, and SnO₂ peaks were appeared successively with increasing Sn content. Above Sn 54 at.%, the ZTO films were deduced to have a local structure mixed with ZnSnO₃ and SnO₂ phases which were more conductive and stable in thermal oxidation than ZnO and Zn₂SnO₄ phases. The lowest resistivity of 1.9 × 10⁻³ Ω cm was obtained for the films with Sn 89 at.% when annealed at 450 °C in a vacuum. The carrier concentrations of the amorphous ZTO films that contained Sn contents higher than 36 at.% and annealed at 450 °C in a vacuum were proportional to the Sn contents, while the Hall mobilities were insensitive to Sn contents and leveling in the range of 23-26 cm²/V s.     

Polarized spectroscopic properties of Nd-doped KGd(WO4)2 single crystal

The polarized absorption spectra, infrared fluorescence spectra, upconversion visible fluorescence spectra, and fluorescence decay curve of orientated Nd³⁺:KGd(WO₄)₂ crystal were measured at room-temperature. Some important spectroscopic parameters were investigated in detail in the framework of the Judd-Ofelt theory and the Fuchtbauer-Ladenburg formula. The effect of the crystal structure on the spectroscopic properties of the Nd³⁺ ions was analyzed. The relation among the spectroscopic parameters and the laser performances of the Nd³⁺:KGd(WO₄)₂ crystal was discussed.     

Effect of composition and deposition temperature on the characteristics of Ga doped ZnO thin films

ZnO films doped with Ga (GZO) of varying composition were prepared on Corning glass substrate by radio frequency magnetron sputtering at various deposition temperatures of room temperature, 150, 250 and 400 °C, and their temperature dependent photoelectric and structural properties were correlated with Ga composition. With increasing deposition temperature, the Ga content, at which the lowest electrical resistivity and the best crystallinity were observed, decreased. Films with optimal electrical resistivity of 2-3 × 10⁻⁴ Ω cm and with good crystallinity were obtained in the substrate temperature range from 150 to 250 °C, and the corresponding C_Ga/(C_Ga + C_Zn) atomic ratio was about 0.049. GZO films grown at room temperature had coarse columnar structure and low optical transmittance, while films deposited at 400 °C yielded the highest figure of merit (FOM) due to very low optical absorption despite rather moderate electrical resistivity slightly higher than 4 × 10⁻⁴ Ω cm. The optimum Ga content at which the maximum figure of merit was obtained decreased with increasing deposition temperature.     

Synthesis and luminescent properties of europium-activated Ca2SnO4 phosphors by sol-gel method

In this paper, the Ca₂SnO₄:Eu³⁺ phosphor was prepared by low-temperature sol-gel method. The influence of calcined temperature and time on structure of Ca₂SnO₄:Eu³⁺ was investigated by using X-ray powder diffraction (XRD). The experimental results show that the dried gel was crystallized to the pure orthorhombic phase after calcination at 900 °C in air for 6 h. These phosphors have displayed bright red color under a UV source. The richness of the red color has been verified by determining their color coordination from the CIE standard charts, and this red emission has been assigned to ⁵D₀→⁷F₂ electric dipole transition at 616 and 620 nm. The excellent luminescence properties make it possible as a good candidate for plasma display panel (PDP) application.     

VUV spectroscopic properties of Ce and Pr-doped AREP2O7-type alkali rare earth diphosphates (A=Na, K, Rb, Cs; RE=Y, Lu)

Spectroscopic properties of Ce³⁺ and Pr³⁺-doped AREP₂O₇-type alkali rare earth diphosphates (A=Na, K, Rb, Cs; RE=Y, Lu) have been investigated using VUV spectroscopy technique. Ce³⁺-doped samples show typical Ce³⁺ emission in the range of 325-450 nm. The strong host absorption band starting at around 160 nm indicates that the optical band gap of AREP₂O₇ hosts is at least 7.7 eV, and the host→Ce³⁺ energy transfer process is rather efficient. However, AREP₂O₇:Pr³⁺ samples show less efficient host→Pr³⁺ energy transfer. The direct Pr³⁺ 4f²→4f¹5d¹ excitation, which are 12160±640 cm⁻¹ higher respect to that of Ce³⁺, leads to strong 4f¹5d¹→4f² emission bands in the range of 230-325 nm but no obvious 4f²→4f² emission lines.     

Novel preparation methods of electrical contacts in Ge-Sb-Te thin films

New preparation methods of electrical contacts have been developed to minimize their effect on Ge-Sb-Te thin films. Impedance spectroscopy technique has been used to extract the contributions of both electrical contacts and the material under investigation. Three different configurations of electrical contacts were investigated. The results show that the effect of the contacts disappears when silver paste is placed on the gold electrode only without touching and interacting with the Ge-Sb-Te film.     

Structural and optical properties of lithium borobismuthate glasses

Glasses with compositions 25Li₂O-(75−x)Bi₂O₃-x B₂O₃, with 0?x?30 mol%, have been prepared using the melt quenching technique. The density and the molar volume have been determined. IR spectroscopy is used as a structural probe of the nearest neighbor environment in the glass network. The optical transmittance and reflectance spectrum of the glasses have been recorded in the wavelength range 400-1100 nm. The values of the optical band gap E_g^opt for indirect transition and refractive index have been determined for 0?x?30 mol%. The average electronic polarizability of the oxide ion α_o²⁻ and the optical basicity have been estimated from the calculated values of the refractive indices. Variations in the different physical parameters such as the density, molar volume, optical band gap, refractive index, average electronic polarizability of the oxide ion and optical basicity with B₂O₃ content have been analyzed and discussed in terms of the changes in the glass structure.     

Polaronic exciton in quantum wells wires and nanotubes

We investigate the effect of the longitudinal-optical phonon field on the binding energies of excitons in quantum wells, well-wires and nanotubes based on ionic semiconductors. We take into account the exciton-phonon interaction by using the Aldrich-Bajaj effective potential for Wannier excitons in a polarizable medium. We extend the fractional-dimensional method developed previously for neutral and negatively charged donors to calculate the exciton binding energies in these heterostructures. In this method, the exciton wave function is taken as a product of the ground state functions of the electron polaron and hole polaron with a correlation function that depends only on the electron-hole separation. Starting from the variational principle we derive a one-dimensional differential equation, which is solved numerically by using the trigonometric sweep method. We find that the potential that takes into account polaronic effects always give rise to larger exciton binding energies than those obtained using a Coulomb potential screened by a static dielectric constant. This enhancement of the binding energy is more considerable in quantum wires and nanotubes than in quantum wells. Our results for quantum wells are in a good agreement with previous variational calculations. Also, we present novel curves of the exciton binding energies as a function of the wire and nanotubes radii for different models of the confinement potential.     

Upconversion luminescence of Tm/Yb-codoped oxyhalide tellurite glasses

Thermal stability, Raman spectra and blue upconversion luminescence properties of Tm³⁺/Yb³⁺-codoped halide modified tellurite glasses have been studied. The results showed that the mixed halide modified tellurite glass (TFCB) has the best thermal stability, the lowest phonon energies and the strongest upconversion emissions. The effect of halide on upconversion intensity is observed and discussed and possible upconversion mechanisms are evaluated. The intense blue upconversion luminescence of Tm³⁺ in TFCB glass may be a potentially useful material for developing upconversion optical devices.     

Long-lasting afterglow in Tb-doped SiO2-Ga2O3-CaO-Na2O glasses and its sensitization by Yb

Long-lasting afterglow due to Tb³⁺ ions has been observed in a Tb³⁺-doped SiO₂-Ga₂O₃-CaO-Na₂O glass, where a 4s empty orbital of Ga³⁺ probably works as an electron-trapping center. The sensitization effect of Yb³⁺ on the afterglow has been noticed.