Luminescence properties of SrSi2AlO2N3 doped with divalent rare-earth ions

The optical properties of SrSi₂AlO₂N₃ doped with Eu²⁺ and Yb²⁺ are investigated towards their applicability in LEDs. The Eu²⁺-doped material shows emission in the green, peaking around 500 nm. The emission is ascribed to the 4f⁶5d¹–4f⁷ transition on Eu²⁺. In view of the too low quantum efficiency and the considerable thermal quenching of the emission at the operation temperature of high power LED (>1W/mm²) this phosphor is only suitable for application in low power LEDs. The Yb²⁺ emission shows an anomalously red-shifted emission compared to Eu²⁺, which is characterized by a larger FWHM, a larger Stokes shift and lower thermal quenching temperature. The emission is ascribed to self-trapped exciton emission. The Yb²⁺ activated phosphor is found to be unsuitable for the use in any phosphor-converted LEDs.     

Color improvement of white-light through Mn-enhancing yellow-green emission of SrSi2O2N2:Eu phosphor for white light emitting diodes

Photoluminescence (PL) enhancement of SrSi₂O₂N₂:Eu and the resultant color improvement of white-light were investigated via co-doping Mn with Eu. We observed that a unique absorption of host lattice of SrSi₂O₂N₂ and its visible band emission peaked at around ∼550 nm for SrSi₂O₂N₂:Mn²⁺ in the wavelength range of 450-600 nm. This highly eye-sensitive ∼550 nm-peaked band emission of SrSi₂O₂N₂ doped with Mn²⁺ happens to overlap the 535 nm-peaked band emission of SrSi₂O₂N₂ doped with Eu²⁺, resulting in an intensified photoluminescence in a maximum by 355%. By combining this as-prepared Mn intensified SrSi₂O₂N₂:Eu phosphor with blue InGaN chip, the quality of white-light was improved to 93.3% for color rendering index and 3584 K for correlated color temperature.     

Unusual luminescence of octahedrally coordinated divalent europium ion in Cs2MP2O7 (M=Ca, Sr)

The excitation and emission spectra of octahedrally coordinated europium ion (Eu²⁺) ions in Cs₂M²⁺P₂O₇ (M²⁺=Ca, Sr) are reported and discussed. The remarkable features of the Eu²⁺ luminescence in these phosphate materials include (a) very large Stokes shift of emission (∼1 eV), (b) high luminescence quenching temperature, and (c) unusually low energy of the emitted photons for Eu²⁺ luminescence in phosphate-based materials. The broad emission bands of Eu²⁺ in Cs₂CaP₂O₇ and Cs₂SrP₂O₇ peak at 607 and 563 nm, respectively. The Stokes shift, crystal field splitting, centroid shift and the red shift of the Eu²⁺ 4f⁶5d¹ electronic configuration have been estimated from the relevant optical data. The radiative lifetime of the Eu²⁺ emission in Cs₂M²⁺P₂O₇ is ∼1.2 μs. The nature of the Eu²⁺ emission in Cs₂M²⁺P₂O₇ is discussed and arguments are presented to associate the luminescence with an extreme case of normal 4f⁶5d¹→4f⁷[⁸S_7/2] emission.     

Preparation and luminescent properties of BaCa2Si3O9:Eu

A blue emitting phosphor of the triclinic BaCa₂Si₃O₉:Eu²⁺ was prepared by the combustion-assisted synthesis method and an efficient blue emission ranging from the ultraviolet to visible was observed. The luminescence and crystallinity were investigated using luminescence spectrometry and X-ray diffractometry (XRD), respectively. The emission spectrum shows a single intensive band centered at 445 nm, which corresponds to the 4f⁶5d¹→4f⁷ transition of Eu²⁺. The excitation spectrum is a broad extending from 260 to 450 nm, which matches the emission of ultraviolet light-emitting diodes (UV-LEDs). The critical quenching concentration of Eu²⁺ in BaCa₂Si₃O₉:Eu²⁺ phosphor is about 0.05 mol. The corresponding concentration quenching mechanism is verified to be a dipole-dipole interaction. The CIE of the optimized sample Ba_0.95Ca₂Si₃O₉:Eu_0.05²⁺ was (x, y)=(0.164, 0.111). The result indicates that BaCa₂Si₃O₉:Eu²⁺ can be potentially useful as a UV radiation-converting phosphor for white light-emitting diodes (LEDs).     

Luminescence studies on ZnO-P2O5 glasses doped with Gd2O3:Eu nanoparticles and Eu2O3

Zinc phosphate glasses doped with Gd₂O₃:Eu nanoparticles and Eu₂O₃ were prepared by conventional melt-quench method and characterized for their luminescence properties. Binary ZnO-P₂O₅ glass is characterized by an intrinsic defect centre emission around 324 nm. Strong energy transfer from these defect centres to Eu³⁺ ions has been observed when Eu₂O₃ is incorporated in ZnO-P₂O₅ glasses. Lack of energy transfer from these defect centres to Eu³⁺ in Gd₂O₃:Eu nanoparticles doped ZnO-P₂O₅ glass has been attributed to effective shielding of Eu³⁺ ions from the luminescence centre by Gd-O-P type of linkages, leading to an increased distance between the luminescent centre and Eu³⁺ ions. Both doped and undoped glasses have the same glass transition temperature, suggesting that the phosphate network is not significantly affected by the Gd₂O₃:Eu nanoparticles or Eu₂O₃ incorporation.     

Investigation on Eu doped Sr2MgSi2O7 red-emitting phosphors for white-light-emitting diodes

In this work, we report the high temperature solid-state synthesis of red phosphors Sr₂MgSi₂O₇: Eu³⁺ with various Eu³⁺ concentrations. Their luminescent properties at room temperature are investigated. The X-ray diffraction patterns indicate that the red phosphors powder conforms to the tetragonal Sr₂MgSi₂O₇. Impurity structure appears when more than 20% Eu³⁺ is doped. The samples show a strong emission line at 615 nm and the intensity increases with the increase of Eu³⁺ concentration until concentration quenching occurs. Charge compensation assists in the reduction of the impurity structure and vacancies; hence the luminescent intensity is enhanced. The decay measurement indicates that the lifetime of Eu³⁺ emission is about 2-3 ms. Some of the Eu³⁺ can be reduced to Eu²⁺; this is also discussed.     

The photoluminescent properties of Eu in MgO-Ga2O3-SiO2 nanocrystalline glass-ceramic

The MgO-Ga₂O₃-SiO₂ glass-ceramic (GC) containing MgGa₂O₄ nanocrystals and glasses doped with Eu³⁺ ions were prepared by the sol-gel method. The down-conversion and up-conversion luminescence (UCL) properties were studied. The results indicated that the relative intensity of f-f transitions of Eu³⁺ decreased in contrast with that of charge transfer (CT) absorption with the increase in heating temperature. Using a Xe lamp and 800 nm femtosecond (fs) laser excitation, strong red luminescence of Eu³⁺ in MgO-Ga₂O₃-SiO₂ glasses and GC was observed.     

Synthesis and luminescence properties of nanocrystalline Gd2O3:Eu by combustion process

The nanocrystalline Gd₂O₃:Eu³⁺ powders with cubic phase were prepared by a combustion method in the presence of urea and glycol. The effects of the annealing temperature on the crystallization and luminescence properties were studied. The results of XRD show pure phase can be obtained, the average crystallite size could be calculated as 7, 8, 15, and 23 nm for the precursor and samples annealed at 600, 700 and 800 °C, respectively, which coincided with the results from TEM images. The emission intensity, host absorption and charge transfer band intensity increased with increasing the temperature. The slightly broad emission peak at 610 nm for smaller particles can be observed. The ratio of host absorption to O²⁻-Eu³⁺ charge transfer band of smaller nanoparticles is much stronger compared with that for larger nanoparticles, furthermore, the luminescence lifetimes of nanoparticles increased with increasing particles size. The effects of doping concentration of Eu³⁺ on luminescence lifetimes and intensities were also discussed. The samples exhibited a higher quenching concentration of Eu³⁺, and luminescence lifetimes of nanoparticles are related to annealing temperature of samples and the doping concentration of Eu³⁺ ions.     

Photoluminescence properties of Sr1-xSi2O2N2: Eux as green to yellow-emitting phosphor for blue pumped white LEDs

This study evaluated potential applications of green to yellow-emitting phosphors (Sr_1−xSi₂O₂N₂: Eu²⁺_x) in blue pumped white light emitting diodes. Sr_1-xSi₂O₂N₂: Eu²⁺_x was synthesized at different Eu²⁺ doping concentrations at 1450 °C for 5 h under a reducing nitrogen atmosphere containing 5% H₂ using a conventional solid reaction method. The X-ray diffraction patterns of the prepared phosphor (Sr_1-xSi₂O₂N₂: Eu²⁺_x) were indexed to the SrSi₂O₂N₂ phase and an unknown intermediate phase. The photoluminescence properties of these phosphors (Sr_1−xSi₂O₂N₂: Eu²⁺_x) showed that the samples were excited from the UV to visible region due to the strong crystal field splitting of the Eu²⁺ ion. The emission spectra under excitation of 450 nm showed a bright color at 545-561 nm. The emission intensity increased gradually with increasing Eu²⁺ doping concentration ratio from 0.05 to 0.15. However, the emission intensity decreased suddenly when the Eu²⁺ concentration ratio was >0.2. As the doping concentration of Eu²⁺ was increased, there was a red shift in the continuous emission peak. These results suggest that Sr_1-xSi₂O₂N₂: Eu₂⁺_x phosphor can be used in blue-pumped white light emitting diodes.     

Blue light emission from Eu ions in sol-gel-derived Al2O3-SiO2 glasses

Blue light-emitting glasses were successfully prepared by doping Eu²⁺ ions in the system Al₂O₃-SiO₂. The Al₂O₃-SiO₂ glasses doped with Eu³⁺ ions were synthesized using a sol-gel method, followed by heating in hydrogen gas atmosphere to reduce into the Eu²⁺ ions. The obtained glasses exhibited emission spectra with peak at ∼450 nm due to 4f⁶5d→4f⁷ (⁸S_7/2) transition, the intensities of which strongly changed depending on their glass composition and heating conditions. The emission quantum efficiency of 48% was achieved by heating the glass with the ratio of Al³⁺ to Eu³⁺ at about 6 at 1000 °C in hydrogen gas atmosphere. It was found that the Al₂O₃-SiO₂ glasses were appropriate not only for homogeneously doping the Eu³⁺ ions in glass structure but also reducing to Eu²⁺ ions, resulting in enhanced blue light-emission properties.     

Optical properties of (ZnO)0.5(P2O5)0.5 glasses doped with Gd2O3:Eu nanoparticles and Eu2O3

Binary (ZnO)_0.5(P₂O₅)_0.5 glasses doped with Eu₂O₃ and nanoparticles of Gd₂O₃:Eu were prepared by conventional melt-quench method and their luminescence properties were compared. Undoped (ZnO)_0.5(P₂O₅)_0.5 glass is characterized by a luminescent defect centre (similar to L-centre present in Na₂O-SiO₂ glasses) with emission around 324 nm and having an excited state lifetime of 18 ns. Such defect centres can transfer the energy to Eu³⁺ ions leading to improved Eu³⁺ luminescence from such glasses. Based on the decay curves corresponding to the ⁵D₀ level of Eu³⁺ ions in both Gd₂O₃:Eu nanoparticles incorporated as well as Eu₂O₃ incorporated glasses, a significant clustering of Eu³⁺ ions taking place with the latter sample is confirmed. From the lifetime studies of the excited state of L-centre emission from (ZnO)_0.5(P₂O₅)_0.5 glass doped with Gd₂O₃:Eu nanoparticles, it is established that there exists weak energy transfer from L-centres to Eu³⁺ ions. Poor energy transfer from the defect centres to Eu³⁺ ions in Gd₂O₃:Eu nanoparticles doped (ZnO)_0.5(P₂O₅)_0.5 glass has been attributed to effective shielding of Eu³⁺ ions from the luminescence centre by Gd-O-P type of linkages, leading to an increased distance between luminescent centre and Eu³⁺ ions.     

Luminescence properties of Eu in gadolinium molybdate β′-Gd2Mo3O12 phosphors

In this paper, we report the synthesis and photoluminescence (PL) properties of β′-Gd₂Mo₃O₁₂ doped with Eu³⁺ ions. The relationship between Eu³⁺ luminescence versus concentration and temperature is discussed. In order to investigate the mechanism of concentration quenching, luminescence decay curves are measured and the Inokuti–Hirayama model is used to analyze them. The activation energy for the thermal quenching is estimated by the Arrhenius fitting. The emission spectrum of β′-Gd₂Mo₃O₁₂ exhibits the strongest emission peak at 614.5 nm due to electric–dipole transition. The excitation spectrum shows several sets of lines in the range of 350–425 nm which are associated with the typical intra-configurational 4f⁶ transitions of Eu³⁺. The spectral positions of these lines match well with the emission spectra of near-UV LEDs, which makes the phosphor find a potential application for white light-emitting-diodes.     

Crystal structure and photoluminescence properties of Eu-activated Ba2LiB5O10 phosphors

A novel orange-yellow-emitting Ba₂LiB₅O₁₀:Eu²⁺ phosphor has been synthesized by traditional high temperature solid state reaction. A monoclinic crystal structure of Barium lithiumborates Ba₂LiB₅O₁₀ was verified by the investigation of X-ray diffraction (XRD). The compound crystallizes in the space group of P121/m1(11) (Z = 2) with the unit cell parameters a = 4.414(1) Å, b = 14.576(2) Å, c = 6.697(2) Å and β = 104.26(2)°. Barium and lithium atoms are located in distorted octahedral and tetrahedral oxygen coordinations, respectively. Upon around 365 nm excitation, the Eu²⁺-activated Ba₂LiB₅O₁₀ phosphors exhibit a single broad emission band with the maximum at about 587 nm, due to the 4f⁶5d → 4f⁷(8S_7/2) transition of Eu²⁺. This work investigates the relationship between luminescence properties and structural characterization of the Ba₂LiB₅O₁₀: Eu²⁺. This newly developed phosphor shows high potential as a phosphor conversion for white LED applications.     

Luminescent properties of a new green emitting Eu doped CaZrSi2O7 phosphor for WLED applications

CaZrSi₂O₇ (CZS), a modification of the thortveitite family, was prepared as a polycrystalline powder material by the conventional solid-state reaction method. Structural, thermal and photoluminescence (PL) properties of the prepared material were investigated in order to evaluate its potentiality. XRD patterns confirm the monoclinic phase of CaZrSi₂O₇: Eu²⁺ phosphors.. Emissions arising from transitions between the 5d and 4f orbital gaps of Eu²⁺ are manifested in the broadband excitation and emission spectra with major peaks at 363 and 512 nm, respectively. The excitation wavelength matches well with that of the emission of the ultraviolet-light emitting diode (UV-LED). Concentration quenching occurs when the Eu²⁺ concentration is beyond 0.05 and the dipole-dipole interaction was the reason for the corresponding quenching mechanism. The temperature dependence of emission intensity of CZS: Eu²⁺ phosphor was investigated and it showed better thermal stability than the standard YAG: Ce³⁺ phosphor.     

Synthesis and crystal structures and luminescent properties of divalent europium-doped Ba2ZnSi2O7 and BaZn2Si2O7

The monoclinic Ba₂ZnSi₂O₇:Eu²⁺ blue-green-emitting phosphor and the orthorhombic BaZn₂Si₂O₇:Eu²⁺ green-emitting phosphor were prepared by combustion-assisted synthesis method as the fluorescent materials for ultraviolet-light-emitting diodes (UV-LEDs) performed as a light source. The crystallinity and luminescence were investigated using X-ray diffraction (XRD) and photoluminescence (PL) spectroscopy. Pure monoclinic Ba₂ZnSi₂O₇ and orthorhombic BaZn₂Si₂O₇ crystallize completely at 1100 °C. The doped Eu²⁺ ions did not cause any significant change in the host structure. The emission spectra presented an emission position red shift of up to 16 nm from Ba₂ZnSi₂O₇:Eu²⁺ to BaZn₂Si₂O₇:Eu²⁺. The excitation spectra of Ba₂ZnSi₂O₇:Eu²⁺ and BaZn₂Si₂O₇:Eu²⁺ were broad-banding, extending from 260 to 465 nm, which match the emission of UV-LEDs.     

Yb and Yb-Eu luminescent properties of the Li2Lu5O4(BO3)3 phase

The luminescence of Yb³⁺ in the oxyborate Li₂Lu₅O₄(BO₃)₃ is reported. At low temperature, in addition to the usual ytterbium infrared emission, this phosphor presents an emission in the ultraviolet () which corresponds to the transition from the charge transfer state (O-Yb) to the 4f levels of Yb³⁺. The temperature quenching Tq50% is equal to 120 K. The infrared emission studied at room temperature is located between 950 and 1100 nm.Europium emission quenching in the Li₂Yb₅O₄(BO₃)₃ phase is related to Eu→Yb transfer by cross-relaxation. The reverse Yb→Eu transfer by cooperative sensitization is highlighted in the codoped Li₂Lu₅O₄(BO₃)₃ compound.     

Green Eu-doped Ba3Si6O12N2 phosphor for white light-emitting diodes: Synthesis, characterization and theoretical simulation

The Eu²⁺-doped Ba₃Si₆O₁₂N₂ green phosphor (Eu_xBa_3−xSi₆O₁₂N₂) was synthesized by a conventional solid state reaction method. It could be efficiently excited by UV-blue light (250-470 nm) and shows a single intense broadband emission (480-580 nm). The phosphor has a concentration quenching effect at x=0.20 and a systematic red-shift in emission wavelength with increasing Eu²⁺ concentration. High quantum efficiency and suitable excitation range make it match well with the emission of near-UV LEDs or blue LEDs. First-principles calculations indicate that Ba₃Si₆O₁₂N₂:Eu²⁺ phosphor exhibits a direct band gap, and low band energy dispersion, leading to a high luminescence intensity. The origin of the experimental absorption peaks is clearly identified based on the analysis of the density of states (DOS) and absorption spectra. The photoluminescence properties are related to the transition between 4f levels of Eu and 5d levels of both Eu and Ba atoms. The 5d energy level of Ba plays an important role in the photoluminescence of Ba₃Si₆O₁₂N₂:Eu²⁺ phosphor. The high quantum efficiency and long-wavelength excitation are mainly attributed to the existence of Ba atoms. Our results give a new explanation of photoluminescence properties and could direct future designation of novel phosphors for white light LED.     

Photoluminescence analysis of α-Al2O3 powders doped with Eu and Eu ions

Alumina (Al₂O₃) powders doped with europium trivalent (Eu³⁺) were prepared by a low-temperature (∼280 °C) combustion synthesis technique. When the powder was heat treated at 1200 °C for 2 h in the presence of flowing ammonia (NH₃), α-Al₂O₃ crystalline ceramic powders was obtained. The analysis of the luminescence showed that Eu³⁺ was reduced to europium divalent (Eu²⁺) after the heat-treatment process. Under ultraviolet (UV) lamp excitation (λ=254 nm) these powders containing sub-microcrystalline structures present bright red (Al₂O₃:Eu³⁺) and green (Al₂O₃:Eu²⁺) luminescence indicating that this material is a potential candidate for applications in phosphor technology.     

Luminescence properties of Tm co-doped Sr2Si5N8:Eu red phosphor

The Sr₂Si₅N₈:Eu²⁺ phosphors, both undoped and doped with Tm³⁺, were synthesized by high temperature solid-state method. The XRD pattern shows that only Sr₂Si₅N₈ phase is formed whatever Tm³⁺ was doped or not. The peak positions of both phosphors are centered at 612 nm which is assigned to the 4f⁶5d→4f⁷ transition of Eu²⁺. It implies that the crystal field, which affects the 5d electron states of Eu²⁺, is not changed dramatically after the phosphor is doped with Tm³⁺. The afterglow time is about 10 min after Tm³⁺ ion is introduced into the phosphor. The concentration of Tm³⁺ has little influence on the afterglow time of the phosphor. The depths of trap energy level of the two phosphors were calculated based on the TL spectra. The depths of Sr₂Si₅N₈:Eu²⁺ and Sr₂Si₅N₈:Eu²⁺, Tm³⁺ are 1.75 and 1.01 eV, respectively.     

Green emission from Tb-doped SrSi2O2N2 phosphors under ultraviolet light irradiation

Tb-doped SrSi₂O₂N₂ phosphors with promising luminescent properties were synthesized by the conventional solid-state reaction method, characterized by powder X-ray diffraction and studied by photoluminescence excitation and emission spectra. The synthesized materials exhibited a weak blue emission and a strong green emission in the region of 400-470 nm and 480-650 nm, which are attributed to ⁵D₃→⁷F_j (j=5, 4, 3) and ⁵D₄→⁷F_j (j=6, 5, 4, 3) transitions of Tb³⁺, respectively. The green emission from ⁵D₄→⁷F₅ at 543 nm showed the highest intensity under the optimized concentration of 0.1 mol, after which the quenching concentration became relevant. The quenching behavior of the emission of Tb³⁺ was explained by the cross-relaxation of its excited state.