Adding channels with PSBT format at 40 Gbit/s in an existing 10 Gbit/s optical network

Until recently, the wavelength-division-multiplexed (WDM) transmission system has reached record capacities and distances due to innovations such as FEC (Forward Error Correction), distributed Raman amplification, new transmission fiber and advanced optical format. Optical-communication systems exclusively employed conventional On-Off Keying signals in either Non-Return-To-Zero (NRZ) or Return-To-Zero (RZ) format. Recently a number of advanced modulation formats have attracted attention. Some of these formats carry information through On-Off-Keying but also modulate the optical phase in order to enhance the robustness of signal to chromatic dispersion, optical filtering and non-linearities. Through extensive sets of simulation results, we showed that it is possible to replace a channel with higher bit-rate on existing DPSK or OOK at 10Gbit/s transmission link. Duobinary formats are ideal candidates to do it and are known for their low spectral range and high tolerance to residual chromatic dispersion. These particularities make them very attractive for both high bit rates and high distance-transmissions. Today, Phase Shaped Binary Transmission (PSBT) is considered as being the promising format for the deployment of 40Gbit/s technology on existing links at 10Gbit/s WDM long haul transmissions.     

Simulation of Fiber to the Home at 10 Gbit/s using GE-PON architecture

In this paper, a fiber communication system is employed using Giga Ethernet Passive Optical Network (GE-PON) architecture. In this architecture an optical fiber is employed directly from a Central Office to the home. A 1:8 splitter is used as a PON element which establishes communication between a Central Office to different users. The architecture has been investigated for different lengths from a Central Office to the PON in terms of BER. For 10 Gbit/s system the plots between the BER and transmission distance are plotted and it are seen that as the distance increases beyond the 15 km the BER is increased very sharply. The results in the form of voice and data spectrum for different users of FTTH with GE-PON architecture are shown.     

Secure authentication scheme for 10 Gbit/s Ethernet passive optical networks

With the development of access network, 10G EPON has gained more and more attention. As its topology structure is point-to-multi-point and the downstream data is broadcasted, it will suffer from eavesdropping and masquerading attack. To eliminate these safety threats, this paper proposes an integrated security scheme including a bilateral authentication method and an encryption algorithm combined with one-way hash function. The authentication method can verify OLT and ONU during the registration process, preventing illegal users joining the network, and safely establish a secret key used for encrypting as well. The proposed scheme's security is based on the computational Diffie–Hellman assumption and the target collision resistant hash functions. The simulation results indicate that this mechanism is more suitable for practical use.     

Enhanced performance analysis of 10 Gbit/s optical OFDM-RoF transmission links

In this paper, we have presented analysis of 10 Gbit/s optical OFDM-RoF transmissions links with distance of 50 km and reported the improved performance by usage of a square root module (SQRT).     

First-principles study of adsorption and diffusion on Ge/Si(0 0 1)-(2 × 8) and Ge/Si(1 0 5)-(1 × 2) surfaces

Using first-principles total-energy calculations, we have investigated the adsorption and diffusion of Si and Ge adatoms on Ge/Si(0 0 1)-(2 × 8) and Ge/Si(1 0 5)-(1 × 2) surfaces. The dimer vacancy lines on Ge/Si(0 0 1)-(2 × 8) and the alternate S_A and rebonded S_B steps on Ge/Si(1 0 5)-(1 × 2) are found to strongly influence the adatom kinetics. On Ge/Si(0 0 1)-(2 × 8) surface, the fast diffusion path is found to be along the dimer vacancy line (DVL), reversing the diffusion anisotropy on Si(0 0 1). Also, there exists a repulsion between the adatom and the DVL, which is expected to increase the adatom density and hence island nucleation rate in between the DVLs. On Ge/Si(1 0 5)-(1 × 2) surface, the overall diffusion barrier of Si(Ge) along direction is relative fast with a barrier of ∼0.83(0.61) eV, despite of the large surface undulation. This indicates that the adatoms can rapidly diffuse up and down the (1 0 5)-faceted Ge hut island. The diffusion is also almost isotropic along [0 1 0] and directions.     

A germanium photodetector array for the near infrared monolithically integrated with silicon CMOS readout electronics

Near infrared (NIR) detectors, operating in the 1.3–1.6 μm region, are key elements in a number of applications ranging from optical communications to remote sensing. InGaAs and Ge are currently the materials of choice for the fabrication of NIR detectors due to their good absorption and transport properties. However, as the required performances increase (bit-rate in optical communications, number of pixels in imaging, etc.), it becomes more and more important to reduce the separation from detectors and driving/biasing and amplifying electronics, by integrating the two components on the same chip.We demonstrate an array of NIR detectors monolithically integrated with standard silicon CMOS readout electronics. The employed low temperature process allowed the integration of the detectors as the last step of chip fabrication. The integrated micro-system consists of a linear array of 120×120 μm² pixels, an analog CMOS multiplexer and a transimpedance amplifier. The chip exhibits a good photoresponse in the NIR, with responsivities as high as 43 V/W at 1.3 μm, dark currents of 1 mA/cm² and inter-pixel cross-talk better than −20 dB.     

Density functional study of ethylamine and allylamine on Si(1 0 0)-2 × 1 and Ge(1 0 0)-2 × 1 surfaces

We have investigated the interactions of ethylamine and allylamine with models of the Si(1 0 0)-2 × 1 and Ge(1 0 0)-2 × 1 semiconductor surfaces. Ab initio molecular orbital calculations, along with density functional theory (DFT), are used to examine the interaction of these amines with cluster models of the semiconductor surfaces. The transition states and final adsorption products for adsorption of the molecules are predicted. The DFT calculations show the amines form N-dative bond states with Si(1 0 0)-2 × 1 or Ge(1 0 0)-2 × 1 as the initial adsorption product. The initial dative-bond products can be further activated, resulting in N-H bond cleavage on both surfaces. The overall reaction of a given amine on Si(1 0 0) via N-H dissociation is more exothermic than on the Ge(1 0 0) surface.     

2.50 Gbit/s optical CDMA over FSO communication system

Optical CDMA over FSO communication system is very effective to provide high data rate transmission with very low bit error rate and low amount of multiple access interference. In this paper, we have presented optical CDMA over FSO communication system to the range of 8000 m. The simulative results reveal that the transmission distance is limited mainly by the multi-access interference (MAI) which arises when there are number of users in the system because of the fact that one user data becomes noisy for all other users in the channel.     

Analysis of 2.5 Gbit/s GPON downlink optical-receiver performance

In the gigabit-capable passive optical network (GPON) optical communication system, the selection of fiber and system performance-analysis is the key links for the realization of system function. Especially the characteristic budget and parameter setting of downlink receiver are topped the list. The analysis of receiver power penalty can reduce the influence on receiver sensitivity and bit error rate (BER) that caused by waveguide dispersion and pulse widening. This article will simulate the performance of GPON downlink receiver, then analyze typical characteristics such as Four Wave Mixing (FWM), Erbium-Doped Fiber Amplifier (EDFA), system eye pattern and Q factor and so on, so as to validate the feasibility of the optical downlink.     

Perpendicular magnetic recording technology at 230 Gbit/in

A perpendicular recording system that allows areal densities beyond 200 Gbit/in² has been designed and tested to investigate the major challenges in perpendicular magnetic recording. The integrated write/read head has a trailing shield to improve the write head field gradient and a conventional CIP–GMR reader. The medium is a low-noise CoPtCr-based oxide medium with a CoTaZr soft underlayer. On track byte error rates at ∼ 50 Mb/s are better than 10⁻⁴ at ∼1000 kbpi. Using a 15% off-track criterion at 10⁻² byte error rate, track densities between 200–240 ktpi are realized, yielding areal densities of 210–233 Gbit/in². High-resolution magnetic force microscopy (hrMFM) has been employed to investigate the write characteristics of these heads with improved cross-track resolution. Using a quantitative analysis method, many parameters, such as transition curvature and transition width, are estimated from the hrMFM image. Significant transition curvature is found, which increases the width of the read head response to a transition, T₅₀, by 2–3 nm.These results give insights into the recording physics of perpendicular recording and in particular point out improvements required for achieving even higher areal densities.     

Performance enhanced down-stream signalling for next generation long-reach 10 Gbit/s passive optical networks

In this paper, we have analyzed the signal processing methods both in digital and optical domain to enhance the transmission performance of downstream signalling in long reach passive optical networks (LR-PONs). The impact of non-linear (NL) equalization through signal processing, i.e. Volterra Equalization (VE), Digital Backpropagation (BP) and Optical Phase Conjugation with Non-linearity Module (OPC-NM) is investigated, in 10 Gbit/s (XG) DP-QPSK long-reach wavelength division multiplexed (WDM) PONs without midspan repeaters over 120 km standard single mode fibre (SMF) link for down-stream signals. Due to the compensation of optical Kerr effects, the sensitivity penalty is reduced to 2 dB by BP algorithm, 1.5 dB by VE algorithm and 2.69 dB by OPC-NM. Moreover, with the implementation of NL equalization technique we are able to get the transmission distance of 126.6 km SMF for the 1:1024 split-ratio at 5 GHz channel spacing in the non-linear region. Furthermore, the concept of super passive optical network (S-PON) is also evaluated, which involves a repeater stage consisting of optical amplifiers, to study the feasibility for receiver side signal processing and simplification.     

RZ-DPSK transmission at 80 Gbit/s channel rate using in-line semiconductor optical amplifiers

We numerically demonstrate the feasibility of return-to-zero differential phase-shift keying transmission at 80 Gbit/s channel rate using cascaded in-line semiconductor optical amplifiers.     

Structural fluctuation of dimers on Ge(0 0 1) surface near transition temperature

The structural fluctuation of the orientational arrangement of buckled dimers on a Ge(0 0 1) surface near the transition temperature of the order-disorder phase transition is investigated by time-resolving dynamical Monte Carlo simulations. STM images averaged in a finite period are derived from the simulation. The coexistence of the c(4 × 2) and the apparent (2 × 1) domains in the STM images observed by experiments is reproduced in the simulated STM images. We show that the coexistence on the Ge(0 0 1) surface can be attributed to the critical slowing down near the transition temperature.     

Structural, magnetic and electronic transport properties of MnxGe1−x/Ge(0 0 1) films grown by MBE at 350 °C

We report on the structural, magnetic and electronic transport properties of thin Mn_xGe_1−x films grown at 350 °C. Isolated Mn₅Ge₃ nanoclusters, about 100 nm in size, were formed at the top surface of the film, dominating the magnetic properties of the whole film. Electronic transport properties show Mn doping effect indicating the presence of substitutional Mn ions dispersed in the Ge host, contributing to the formation of a Mn_xGe_1−x diluted phase. Electrical behaviour indicates a saturation effect with the raise of the nominal Mn concentration in the film, above x ≅ 0.03.     

Simulation of STM images of p(3 × 2)/Na/Ge(0 0 1) surface

Adsorption of Na on the Ge(0 0 1) surface is known to be a cause of surface reconstruction. It is expected to find one Na atom per unit cell of the reconstructed surface, however, the precise atomic configuration of this system is still a matter of controversy. Consequently, the aim of our present theoretical study is to examine the atomic structure of stable p(3 × 2)/Na/Ge(0 0 1) surfaces with and without the possible change of the number of Ge atoms in the surface layer (so-called mass transport). Structural and electronic properties of the considered system are investigated using the local-orbital density functional method. Our considerations are completed by a simulation of STM images of the structures following from molecular dynamics calculations.     

Ground-state properties of arsenic deposited on the Ge(0 0 1)(2 × 1) surface

We present results of ab initio calculations of structural, electronic and vibrational properties of the Ge(0 0 1) surface covered with a monolayer of arsenic. The fully occupied π_u bonding and π_g antibonding electronic states due to the As-As dimer formation are quite close in energy and their ordering is same as that found on the Si(0 0 1) surface. Using our calculated atomic and electronic structures, surface lattice dynamics was studied by employing a linear response approach based on density functional perturbation theory. A comparison of the phonon spectrum of the Ge(0 0 1)/As(2 × 1) surface with that of the clean Ge(0 0 1)(2 × 1) surface indicates the presence of several new characteristic phonon modes due to adsorption of As atoms.     

Limitation in the intrinsic method of EDFA gain optimization for 32 × 40 Gbit/s WDM systems

The gain flattening of the erbium doped fiber amplifier (EDFA) is one of the most important aspects in the EDFA which the gain is wavelength dependent. For the first time the limitation of EDFA gain optimizing for a 32-channel wavelength division multiplexing (WDM) systems is investigated and reported in this paper. In a 32-channel WDM system the most favorable flatness gain achieved was 23.16 ± 1.51 dB with an average noise figure of 5.70 dB. This outcome proposes that the method does not achieve a uniform spectral gain in a 32-channel WDM system that incorporates a bandwidth of around 25 nm. Based on the simulation results the intrinsic optimization of EDFA causes the poor SNR and peak signal power with great variation over a transmission distance of 480 km single mode fiber.     

Performance of a 4×10 Gbit/s optical time domain multiplexed system using SMZ switching

Optical time division multiplexing (OTDM) is emerging and promising alternative for future high-speed photonic networks because of its ability to accommodate higher bit rate and flexible bandwidth. Among other factors the performance of an OTDM system largely depends upon the switching characteristics of a de-multiplexer (DEMUX). Symmetric Mach-Zehnder (SMZ) have been found to be most suitable than all the available de-multiplexing switches because of compact size, thermal stability, and low power operation. In this paper, we simulate four-channel OTDM systems (all channel multiplexer (MUX) and DEMUX) with a Mach-Zehnder modulator and SMZ DEMUX to investigate the impact of signal power, pulse width and control signal power on BER.     

The analysis of the error statistics in a 5 × 40 Gbit/s fibre link with hybrid amplification

We quantify the error statistics and patterning effects in a 5 × 40 Gbit/s WDM RZ-OOK SMF/DCF fibre link using hybrid Raman/EDFA amplification. By extensive use of a numerical model, we determine how the error statistics change with the transmission distance. This knowledge is used as a basis for a constrained coding technique in order to improve the transmission error rate. We propose an adaptive constrained code for mitigation of the patterning effects and demonstrate that this approach can substantially reduce the bit error rate (BER) even for very large values of the channel BER (BER > 10^− 1). The proposed technique can be used in combination with forward error correction schemes (FEC) to extend the range of channel BERs that an FEC scheme is effective over.     

Optical 3R regeneration of 40 Gbit/s degraded data signals

A 40 Gbit/s optical 3R regenerator is proposed and demonstrated. The 3R regenerator consists of a dual-ring injection mode-locked fiber ring laser as the clock recovery module and an electroabsorption modulator (EAM) as the decision gate. The clock recovery module extracts the optical short pulse clock with low timing jitter from degraded 40 Gbit/s optical data streams, while the decision gate restores their signal quality. A numerical model describing the cross-absorption modulation effect in a bulk EAM is developed to explore the operating conditions, such as bias voltage, pump signal power. The timing jitter tolerance for the EAM optical gate is also investigated. Significantly improvement of BER is obtained from 40 Gbit/s RZ signals which are degraded by polarization mode dispersion or chromatic dispersion.