The influence of optical bleaching on lifetimes and luminescence intensity in the slow component of optically stimulated luminescence of natural quartz from Nigeria

The intensity of optically stimulated luminescence may be decreased to a slow or medium component of its decay curve by optical bleaching, that is, by prolonged exposure of the luminescent sample to stimulating light. In this paper, we report on the influence of irradiation and measurement temperature on luminescence lifetimes as well as on the effect of measurement temperature on luminescence intensity in annealed natural quartz from Nigeria. Measurements were carried out in the slow component region using time-resolved optical stimulation at 470 nm on samples annealed at 500 and 600 °C. Luminescence lifetimes were determined from the resultant time-resolved luminescence spectra by analysing the portion of each spectrum after the stimulating light pulse of duration 11 μs. In preparatory tests, the influence of the duration of optical bleaching on lifetimes was investigated. It was found that lifetimes in samples annealed at 500 °C are independent of the duration of optical bleaching, whereas lifetimes in quartz annealed at 600 °C are affected, decreasing towards a constant value with duration of bleaching. Concerning measurements in the slow-component region, lifetimes were found to decrease with irradiation dose for samples annealed at either 500 or 600 °C. The temperature dependence of lifetimes in both sets of quartz is similar with lifetimes constant at about 36 μs between 20 and 120 °C, but decreasing consistently from then on to about 5 μs at 200 °C, the maximum measurement temperature used in experiments. The luminescence intensity was observed to typically go through a peak as the stimulation temperature was increased from 20 to 200 °C, following a brief initial decrease, a change better exemplified in the quartz annealed at 600 °C. The initial decrease in luminescence intensity is attributed to the dominance of optical stimulation over thermal stimulation. On the other hand, the subsequent change of luminescence intensity with temperature is discussed as evidence of thermal assistance to optical stimulation, initially with activation energy of 0.27±0.07 eV and of thermal quenching subsequently with activation energy equal to 0.93±0.23 eV for samples annealed at either 500 or 600 °C. The temperature dependence of lifetimes is explained as showing increased thermal effect on lifetimes with activation energy values within 0.83±0.01 eV. On the other hand, the influence of irradiation on lifetimes is accounted for in terms of an energy band model for quartz consisting of three luminescence centres and one non-radiative recombination centre.     

Electron paramagnetic resonance and the thermoluminescence emission mechanism of the 280 °C peak in natural andalusite crystal

Samples of natural andalusite (Al₂SiO₅) crystal have been investigated in terms of thermoluminescence (TL) and electron paramagnetic resonance (EPR) measurements. The TL glow curves of samples previously annealed at 600 °C for 30 min and subsequently gamma-irradiated gave rise to four glow peaks at 150, 210, 280 and 350 °C. The EPR spectra of natural samples heat-treated at 600 °C for 30 min show signals at g=5.94 and 2.014 that do not change after gamma irradiation and thermal treatments. However, it was observed that the appearance of a paramagnetic center at g=1.882 for the samples annealed at 600 °C for 30 min followed gamma irradiation. This line was attributed to Ti³⁺ centers. The EPR signals observed at g=5.94 and 2.014 are due to Fe³⁺. Correlations between EPR and TL results of these crystals show that the EPR line at g=1.882 and the TL peak at 280 °C can be attributed to the same defect center.     

Comparative study on the effect of annealing treatments on RTL mechanism in natural quartz from different origins

The behaviour of trap centres and luminescence centres has been investigated for fired and unfired natural quartz from bricks and sediments irradiated at 100 Gy and annealed at different temperatures in the range 350-700 °C. The annealing treatment affects thermoluminescence (TL) glow curve as various changes were observed. The higher sensitization occurred for an annealing in the region 550-600 °C. At this annealing temperature, it has been observed the emergence of two peaks arising at 96 and 180 °C. At lower annealing temperatures, these peaks are overlapped by the peaks localized at 90 and 195 °C, respectively. Concerning the fired quartz, the higher sensitization occurred for an annealing in the region 500-550 °C for peak temperature around 200 °C and an unusual desensitization for the peak temperature around 100 °C. The behaviour of the two types of quartz is analyzed regarding to their kinetic parameters and luminescence emission and compared to literature data.     

Mechanisms of TL for production of the 230 °C peak in natural sodalite

The thermoluminescence (TL) peak in natural sodalite near 230 °C, which appears only after submitted to thermal treatments and to gamma irradiation, has been studied in parallel with electron paramagnetic resonance (EPR) spectrum appearing under the same procedure. This study revealed a full correlation between the 230 °C TL peak and the eleven hyperfine lines from EPR spectrum. In both case, the centers disappear at the same temperature and are restored after gamma irradiation. A complete model for the 230 °C TL peak is presented and discussed. In addition to the correlation and TL model, specific characteristics of the TL peaks are described.     

Influence of the SiO thickness on the photoluminescence properties of Er-doped SiO/SiO2 multilayers

Er-doped SiO single layer and Er-doped SiO/SiO₂ multilayers with different SiO thicknesses were prepared by evaporation. In the as-deposited samples, the erbium ions exhibit a very weak photoluminescence emission at 1.54 μm. This luminescence is strongly enhanced after annealing treatments between 500 and 1050 °C, with an optimal annealing temperature which is dependent from the SiO thickness. For the SiO single layer, this optimal temperature is around 700 °C while it is shifted at highest temperature for the multilayers. The origin of the higher luminescence intensity in the SiO layer is also discussed.     

Effect of isochronal annealing on photoluminescence properties of Mn-implanted GaN

Mn ions were implanted into metal organic chemical vapour deposition (MOCVD)-grown GaN with dose ranging from 10¹⁴ to 5×10¹⁶ cm⁻². Isochronal annealing at 800 and 850 °C has been carried out after implantation of the samples. Photoluminescence measurements were carried out on the implanted samples before and after annealing. A peak found at 3.34 eV in the spectra of implanted samples after annealing at 850 °C is attributed to the stacking faults. Blue and green luminescence bands have been observed suppressed and an oxygen-related peak appeared at 3.44 eV in the PL spectra. The suppression of blue and green luminescence bands has been assigned to dissociation of V_GaO_N complex. Near-band-edge (NBE) peak exhibited a blue shift after 800 °C anneal and then red shift to restore its original energy position when annealed at 850 °C.     

TL, OSL and ESR studies on beryllium oxide

Electron spin resonance (ESR) studies were carried out to identify the defect centres responsible for the thermoluminescence (TL) and optically stimulated luminescence (OSL) processes in BeO phosphor. Two defect centres were identified in irradiated BeO phosphor by ESR measurements, which were carried out at room temperature and these were assigned to an O⁻ ion and Al²⁺ centre. The O⁻ ion (hole centre) correlates with the main 190 °C TL peak. The Al²⁺ centre (electron centre), which acts as a recombination centre, also correlates to the 190 °C TL peak. A third centre, observed during thermal annealing studies, is assigned to an O⁻ ion and is related to the high temperature TL at 317 °C. This centre also appears to be responsible for the observed OSL process in BeO phosphor.     

The analysis of thermoluminescent glow peaks of copper doped ZnS thin films after β-irradiation

In the given study, the thermoluminescence (TL) properties of copper (Cu)-doped ZnS thin films were investigated after β-irradiation at room temperature (RT). It was observed that the glow curve of this material has two broad TL peaks, in which one of them was centered at about 110 °C and the other at about 170 °C for a heating rate of 1 °C s⁻¹ in the temperature range from RT to 350 °C. The additive dose (AD), T_m(E_a)−T_stop, repeated initial rise (RIR), variable heating rate (VHR) and computerized glow curve deconvolution (CGCD) methods were used to analyze its glow curves. These methods indicated that the glow curve of this material is the superposition of a number of first- and general-order glow peaks, or at least due to the distribution of traps. The dose responses and fading process of both peaks were also examined, and it was observed that the dose responses of both peaks have similar pattern. First they follow a good linearity with different slopes and then saturate at approximately same dose level (2 kGy). The low-temperature broad peak nearly disappeared after 1 week storage in the dark at RT. On the other hand, the intensity of the high-temperature broad peak was approximately reduced to 50% of its original value. The TL emission spectrum of this material has two main emission bands, namely, the blue and green bands. The first glow peak emits predominantly in blue region, whereas the second glow peak in the green region.     

Multi-peak behavior of photoluminescence of silica particles heat-treated in hydrogen at elevated temperature

Pure nano-partical silica was prepared by sol-gel method, and then was treated in a H₂ ambient at different temperatures. The surface structure and valence bonding of samples were analyzed with IR spectrum and X-ray induced photoelectron spectroscopy, respectively. Its photoluminescence property was studied with fluorescence spectroscopy. The results showed that only one luminescence band at 344 nm exists for silica heat-treated at 450 °C. Silica samples heat-treated at higher temperatures showed completely different luminescence comparing with the samples heat-treated at lower temperatures. Multi-peaks were found in the SiO₂ samples heat-treated at temperatures higher than 700 °C, in which the luminescence peaks at about 379 and 392 nm are similar with the β bands in silica glass originated from the same defect center of two-fold coordinated silicon atoms, and the luminescence bands at about 493 and 528 nm are few reported. The intensity of the luminescence bands increase with the increase of heat treatment temperature from 700 to 900 °C.     

Thermoluminescence kinetic study of binary lead-silicate glasses

This paper describes a detailed experimental study of the thermoluminescence (TL) properties of four binary lead-silicate glasses, with PbO concentrations ranging from 32% to 62% in mole percent. The TL glow peaks between room temperature and 300 °C were analyzed using a systematic thermal cleaning technique. The T_max-T_stop and E-T_stop methods of analysis were used to identify the number of peaks under the glow curves, and to obtain the activation energy E for each TL trap. A computerized glow curve fitting analysis is used to fit the experimental data to four first-order peaks with maxima at temperatures of 54, 80, 110 and 210 °C, as measured with a heating rate of 2 °C/s. The kinetic parameters of the glow-peak at 210 °C were confirmed by using phosphorescence decay methods of analysis. The TL traps associated with the low-temperature TL peak at 54 °C are found to depend strongly on the PbO concentration of the samples, while the higher-temperature TL peaks show a behavior independent of the PbO concentration. The activation energy E and frequency factor s of the low-temperature TL trap associated with the peak at 54 °C are consistent with a trap involving a delocalized transition through the conduction band. However, the activation energies and frequency factors for the higher-temperature TL traps are consistent with traps involving localized transitions via an excited state below the conduction band. The data suggest that these higher-temperature TL traps are associated with the common silicate matrix in these binary silicate glasses.     

Thermoluminescence and absorption spectra of CdSe quantum dot-doped glass irradiated by X-rays

Thermally stimulated luminescence (TSL) of aluminoborosilicate glass doped with CdSe nanoparticles (28 and 47 Å) has been studied after exposure to ionizing radiation; the intense TSL peaks were observed at temperatures 150 and 85 °C, respectively. The optical absorption spectra, as well as TSL of the irradiated samples containing CuBr nanoparticles (44 Å) were also measured. In the case of CuBr, TSL was observed neither before nor after irradiation. The dependence of TSL intensity on irradiation time indicates that glass activated by CdSe nanoparticles shows promise as a dosimetric material.     

Reversible luminescence thermochromism and phase transition in crystals of thiophenylacetylacetonatoboron difluoride

The low-temperature phase transition (−22.4 °C) is accompanied by marked change of the optical properties, as was first revealed for 3-phenylthiopentan-2,4-dionatoboron difluoride (1) in the series of β-diketonatoboron difluorides. This transition was investigated by luminescence and reflection spectroscopy, differential scanning calorimetry (DSL), X-ray analysis and atomic force microscopy methods. It was observed by the DSL method that at the room temperature the complex existed in its high-temperature modification and transformed into the stable one with ΔH=0.981 kcal/mol below −22.4 °C. The reverse transition takes place at 43.4 °C with ΔH=0.59 kcal/mol. Cooling of 1 results in a noticeable change of its morphology: the crystal cracked along the layer borders and nanometer particles were formed. Having been cooled the light-yellow crystals turned into white powder and luminescence colour changed from aquamarine to white. Heating of the cooled 1 to the 47.9 °C (the second phase transition) results in partial coincidence of the reflection and luminescence spectra, as well as those of initial single crystals that indicates the existence of size-dependent optic properties.     

Relationship between crystal morphology and photoluminescence in polynanocrystalline lead sulfide thin films

Thin films of lead sulfide (PbS) nanoparticles were grown on corning glass and Si(1 0 0) substrates by polyethylene glycol-assisted chemical bath deposition (CBD) method. This paper compares the morphology and the luminescence properties (PL) of the deposited thin films in the presence (or absence) of PEG300 and investigates the effect of deposition temperatures. Surface morphology and photoluminescence properties of samples were analyzed. The PL data show a blue-shift from the normal emission at ∼2900 nm in PbS bulk to ∼360 nm in nanoparticles of PbS thin films. Furthermore, the PL emission of the films obtained without the addition of PEG300 (type 1) was slightly shifted from that of the films obtained in presence of PEG300 (type 2) from ∼360 to ∼470 nm. The blue-shifting of the emission wavelengths from 2900 to ∼360 or 470 nm is attributed to quantum confinement of charge carriers in the restricted volume of nanoparticles, while the shift between the two types of PbS nanoparticles thin films is speculated to be due to an increase in the defect concentration. The blue-shift increased with increase of the deposition temperature, which suggests that there has been a relative depletion in particle sizes during the CBD of the films at higher temperatures. The PbS nanocrystalline thin films obtained in the presence of PEG300 at 60 °C exhibit a high blue luminescence.     

Removal of chloridazon by natural and ammonium kerolite samples

The adsorption of chloridazon (5-amino-4-chloro-2-phenylpyridazin-3(2H)-one) on natural and ammonium kerolite samples from aqueous solution at 10, 25 and 40 °C has been studied by using batch experiments. The experimental data points were fitted to the Langmuir equation in order to calculate the adsorption capacities (X_m) of the samples; two straight lines were obtained, which indicates that the adsorption process takes place in two different stages. Values for X_m1 (first stage) ranged from 1.1 × 10⁻² mol kg⁻¹ for natural kerolite at 40 °C up to 5.1 × 10⁻² mol kg⁻¹ for ammonium kerolite at 10 °C and the values for X_m2 (second stage) ranged from 9.1 × 10⁻² mol kg⁻¹ for natural kerolite at 40 °C up to 14 × 10⁻² mol kg⁻¹ for natural kerolite at 10 °C. The adsorption experiments showed on the one hand, that the ammonium kerolite is more effective than natural kerolite to adsorb chloridazon in the range of temperature studied and on the other hand, that the lower temperature, the more effective the adsorption of chloridazon on the adsorbents studied.     

Synthesis and characterization of Eu doped SrY2O4 phosphor

The present paper reports that TL glow curve and kinetic parameter of Eu³⁺ doped SrY₂O₄ phosphor irradiated by beta source. Sample was prepared by solid state preparation method. Sample was characterized by XRD analysis and particle size was calculated by Debye–Scherrer formula. The sample was irradiated with Sr-90 beta source giving a dose of 10 Gy and the heating rate used for TL measurements are 6.7 °C/s. The samples display good TL peaks at 106 °C, 225 °C and 382 °C. The corresponding kinetic parameters are calculated. The photoluminescence excitation spectrum at 247 and 364 nm monitored with 400 nm excitation and the corresponding emission peaks at 590, 612 and 624 nm are reported.     

Synthesis process and the luminescence properties of rare earth doped NaLa(WO4)2 nanoparticles

Rare earth doped NaLa(WO₄)₂ nanoparticles have been prepared by a simply hydrothermal synthesis procedure. The X-ray diffraction (XRD) pattern shows that the Eu³⁺-doped NaLa(WO₄)₂ nanoparticles with an average size of 10-30 nm can be obtained via hydrothermal treatment for different time at 180 °C. The luminescence intensity of Eu³⁺-doped NaLa(WO₄)₂ nanoparticles depended on the size of the nanoparticles. The bright upconversion luminescence of the 2 mol% Er³⁺ and 20 mol% Yb³⁺ codoped NaLa(WO₄)₂ nanoparticles under 980 nm excitation could also be observed. The Yb³⁺-Er³⁺ codoped NaLa(WO₄)₂ nanoparticles prepared by the hydrothermal treatment at 180 °C and then heated at 600 °C shows a 20 times stronger upconversion luminescence than those prepared by hydrothermal treatment at 180 °C or by hydrothermal treatment at 180 °C and then heated at 400 °C.     

Investigation of defect centres responsible for TL/OSL in MgAl2O4:Tb

Magnesium aluminate doped with Tb³⁺ (MgAl₂O₄:Tb³⁺) was prepared by combustion synthesis. Three thermoluminsence (TL) peaks at 120, 220 and 340 °C were observed. PL and TL emission spectrum shows that Tb³⁺ acts as the luminescent centre. Optically stimulated luminescence (OSL) was observed when stimulated by 470 nm blue light.Electron spin resonance (ESR) studies were carried out to identify the defect centres responsible for the TL and OSL processes in MgAl₂O₄:Tb³⁺. Two defect centres were identified in irradiated MgAl₂O₄:Tb³⁺ phosphor by ESR measurements which was carried out at room temperature and these were assigned to V and F⁺ centres. V centre (hole centre) is correlated to 120 and 220 °C TL peaks and F⁺ centre (electron centre), which acts as a recombination centre is correlated to 120, 220 and 340 °C.     

Studies of the phosphorescence of polycrystalline hafnia

Persistent phosphorescence induced by ultraviolet light in polycrystalline HfO₂ and enhancement of the phosphorescence by sintering are investigated. The phosphorescence afterglow emission is in the 1.8-3.2 eV spectral range, with a peak at 2.53 eV. The afterglow intensity is significantly increased by sintering in either inert atmosphere or air. The afterglow light sum measured at room temperature for samples sintered at 1500 °C is more than an order of magnitude higher than that before sintering. In the temperature range −50 to 200 °C, three thermoluminescence (TL) peaks are observed near −10, 30, and 100 °C. The relative contribution of the low-temperature TL peak to the total TL intensity decreases after sintering, and this effect is more pronounced upon sintering in inert atmosphere. Conversely, the contribution of the TL peak near 100 °C increases after sintering. The enhancement of the afterglow by sintering is associated with the observed increase in the intensity of TL peaks at and above room temperature and attributed to an increase in the number of deep charge traps. The room-temperature afterglow time decay has a form consistent with the second-order mechanism, ∝(t₀+t)⁻ⁿ, and the best-fit values of both fitting parameters t₀ and n tend to increase with the sintering temperature.     

Relative response of TL and component-resolved OSL to alpha and beta radiations in annealed sedimentary quartz

Knowledge of the relative luminescence response to alpha and beta radiation is very important in TL and OSL dating. In the present study the relative alpha to beta response is studied in a sedimentary quartz sample, previously fired at 900 °C for 1 h, in the dose region between 1 and 128 Gy, for both thermoluminescence (TL) and linearly modulated optically stimulated luminescence (LM – OSL). The LM – OSL measurements were performed at room temperature and at 125 °C. All OSL signals were deconvolved into their individual components. Comparison of OSL curves after alpha and beta irradiation strongly supports that quartz OSL components follow first order kinetics in both cases. In the case of TL, the relative alpha to beta response is found to be very different for each TL glow-peak, but it does not depend strongly on irradiation dose. In the case of LM – OSL measurements, it is found that the relative behaviour of the alpha to beta response is different for three distinct regions, namely the fast OSL component, the region of medium OSL component originating from the TL glow-peak at 110 °C when stimulation takes place at room temperature and finally the region of slow OSL component. Following stimulation at ambient temperature, the relative alpha to beta response of all components was not observed to depend significantly on dose, with the value of ratio being 0.03 and a tendency to decrease with increasing dose. However, in the case of measurements performed at 125 °C, the relative response of the fast components is much enhanced, and for the remaining components it increases with increasing dose. Special care must be taken to examine the relative alpha to beta response of the fast component at 125 °C which contrasts the relative response of the TL peak at ca. 325 °C. The implications for the dating of annealed quartz are also briefly discussed.     

Room temperature photoluminescence mechanism of SiOx film after annealing at different temperatures

SiO_x films were deposited on Si(1 0 0) substrates by evaporation of SiO powder. The samples were annealed from room-temperature (RT) to 1100 °C. After the samples were cooled down to RT, photoluminescence (PL) spectra from these samples were measured. It was found that when the annealing temperature Ta is not higher than 1000 °C, there is a PL centered at 620 nm, and with Ta increasing the intensity increases at first and then decreases when Ta is higher than 500 °C. When Ta is no less than 1000 °C another PL peak located at 720 nm appears. Combined with Raman and XRD spectra, we confirm that the latter PL is from Si nanocrystals that start to form when Ta is higher than 1000 °C. PL spectra for Ta<900 °C were discussed in detail and was attributed to defects in the matrix rather than from Si clusters.