Onion like growth and inverted many-particle energies in quantum dots

Use of surfactants like antimony in MOCVD growth enables novel growth regimes for quantum dots (QDs). The quantum dot ensemble luminescence no longer appears as a single inhomogeneously broadened peak but shows a multi-modal structure. Quantum dot subensembles are forming which differ in height by exactly one monolayer. For the first time the systematic dependence of excitonic properties on quantum dot size and shape can be investigated in detail. Both biexcitonic binding energy and excitonic fine-structure splitting vary from large positive through zero to negative values. Correlation and piezoelectric effects explain the observations.     

Tuning Photoluminescence Energy and Fine Structure Splitting in Single Quantum Dots by Uniaxial Stress

We report a photoluminescence （PL） energy red-shift of single quantum dots （QDs） by applying an in-plane compressive uniaxial stress along the [110] direction at a liquid nitrogen temperature. Uniaxial stress has an effect not only on the confinement potential in the growth direction which results in the PL shift, but also on the cylindrical symmetry of QDs which can be reflected by the change of the full width at half maximum of PL peak. This implies that uniaxial stress has an important role in tuning PL energy and fine structure splitting of QDs.     

Identification of surface states in PbS quantum dots by temperature dependent photoluminescence

We report the type and nature of the surface states in PbS quantum dots grown in poly vinyl alcohol by the colloidal technique. Mercaptoethanol (C₂H₅OSH) capping and the molar ratio of Pb:S were used as parameters to understand the origin of the surface state related photoluminescence. From absorption and photoluminescence measurements, it was observed that increasing Lead concentration resulted in bigger nanoparticles with broad size distribution. However, the increase in sulfur concentration helped in the formation of smaller nanoparticles with narrow size distribution. Passivation studies also revealed that the origin of the bands below 1.1 eV was sulfur related. Thus these experiments indicated that sulfur played an important role, not only in size selectivity, but also in controlling defects in PbS quantum structures. Temperature dependent PL studies on different samples with various Pb:S molar ratios and with mercaptoethanol treated gave an insight into the nature of the surface states. Based on these results, we explain the origin of the surface states and proposed a model for different PL bands. The observed temperature-dependent trends of PL intensity (decreasing in Pb:S::1:1, increasing in S terminated and anomalous behavior in samples with excess of Pb) is attributed to the dominant mid-gap states and the results are consistent with carrier redistribution and recombination statistics involved in the quantum structures.     

Influence of annealing temperature on the photoluminescence properties of ZnO quantum dots

The properties of ZnO quantum dots (QDs) synthesized by the sol-gel process are reported. The primary focus is on investigating the origin of the visible emission from ZnO QDs by the annealing process. The X-ray diffraction results show that ZnO QDs have hexagonal wurtzite structure and the QD diameter estimated from Debye-Scherrer formula is 8.9 nm, which has a good agreement with the results from transmission electron microscopy images and the theoretical calculation based on the Potential Morphing Method. The room-temperature photoluminescence spectra reveal that the ultraviolet excitation band has a red shift. Meanwhile, the main band of the visible emission shifts to the green luminescence band from the yellow luminescence one with the increase of the annealing temperature. A lot of oxygen atoms enter into Zn vacancies and form oxygen antisites with increasing temperature. That is probably the reason for the change of the visible emission band.     

Temperature dependence of indirect-exciton luminescence in in-plane magnetic field

We report on a magneto-luminescence on a double quantum well subject to an in-plane magnetic field. The attention is paid to the properties of interwell excitons, which are indirect in the real space and which become indirect in the reciprocal space as well when a finite in-plane magnetic field is applied. Such indirect exciton states become optically inactive unless some relaxation mechanisms of their momentum appear. The experiment is carried out on a sample where, as reported previously, the radiative recombination of indirect excitons is possible due to their localization or via collisions with structural defects. The experimental data presented here, measured at various temperatures, favour the latter mechanism which is less sensitive to the system temperature in comparison with the former one.     

Multiphoton ultraviolet and visible upconversion luminescence of TmYb co-doped oxyfluoride glass

The ultraviolet upconversion luminescence of Tm³⁺ ions sensitized by Yb³⁺ ions in oxyfluoride glass when excited by a 975 nm diode laser was studied in this paper. One typical ultraviolet upconversion luminescence lines positioned at 362.3 nm was found. It can be attributed to the five-photon upconversion luminescence transition of ¹D₂ → ³H₆. Several visible upconversion luminescence lines at 451.1 nm, (477.9 nm, 462.5 nm), 648.7 nm, (680.5 nm, 699.5 nm) and (777.5 nm, 800.7 nm) were found also, which results from the fluorescence transitions of five-photon ¹D₂ → ³F₄, three-photon ¹G₄ → ³H₆, three-photon ¹G₄ → ³F₄, two-photon ³F₃ → ³H₆ and two-photon ³H₄ → ³H₆ of Tm³⁺ ion, respectively. The theoretical analysis suggests that the upconversion mechanism of the 362.3 nm ¹D₂ → ³H₆ upconversion luminescence is the cross energy transfer of {³H₄(Tm³⁺) → ³F₄(Tm³⁺), ¹G₄(Tm³⁺) → ¹D₂(Tm³⁺)} and {¹G₄(Tm³⁺) → ³F₄(Tm³⁺), ³H₄(Tm³⁺) → ¹D₂(Tm³⁺)} between Tm³⁺ ions. In addition, the upconversion luminescence of ¹G₄ and ³H₄ state results from the sequential energy transfer {²F_5/2(Yb³⁺) → ²F_7/2(Yb³⁺), ³H₄(Tm³⁺) → ¹G₄(Tm³⁺)} and {²F_5/2(Yb³⁺) → ²F_7/2(Yb³⁺), ³F₄(Tm³⁺) → ³F₂(Tm³⁺)} from Yb³⁺ ions to Tm³⁺ions, respectively.     

Diploe-allowed optical absorption of an exciton in a spherical parabolic quantum dot

A investigation of the linear and nonlinear optical properties of an exciton in a spherical parabolic quantum dot has been performed by using the matrix diagonalization method. The optical absorption coefficients between the ground state (L=0,π=+1) and the first excited state (L=1,π=-1) have been examined based on the computed energies and wave functions. The results are presented as a function of the incident photon energy for the different values of the incident optical intensity and the confinement strength. We found the optical absorption coefficient is strongly affected by the incident optical intensity and the confinement strength.     

Microstructure and multiphoton luminescence of Au nanocrystals prepared by using glancing deposition method

Au crystal columns embedded in SiO₂ with an average length of 480 nm and diameter of 30 nm were prepared by radio frequency co-sputtering technique with glancing angle. The photoluminescence (PL) of the Au-SiO₂ crystal column film exhibited polarization characteristic. With an increase of the laser power, the slope ∂ log(PL intensity)/∂ log(laser power) changed from 2 to 3, which indicated that the PL of Au-SiO₂ crystal columns were induced by two- and three-photon absorption, respectively.     

Polarization catastrophe in nanostructures doped in photonic band gap materials

In the presence of the dipole-dipole interaction, we have studied a possible dielectric catastrophe in photonic band gap materials doped with an ensemble of four-level nanoparticles. It is found that the dielectric constant of the system has a singularity when the resonance energy lies within the bands. This phenomenon is known as the dielectric catastrophe. It is also found that this phenomenon depends on the strength of the dipole-dipole interaction.     

Electric field effect in the spin dynamics of self-assembled InAs/GaAs quantum dots

We identify fundamental mechanisms of electron and hole dynamics in self-organized InAs/GaAs quantum dots (QDs) subject to vertical electric fields by photocurrent investigations. We propose a spin–flip mechanism involving a spin exchange between neighboring QDs. The spin–flip process is revealed in the photocurrent dynamics when the exciton population increases unexpectedly with reverse bias.     

Preparation and luminescent properties of europium-doped yttria fibers by electrospinning

Sub-micrometer-sized fibers of europium-doped yttria (Y₂O₃:Eu³⁺) were prepared by electrospinning followed by high-temperature calcinations for the first time. The fibers were with diameters of 200-400 nm and lengths of several 10 μm and cubic in phase. The spectral properties of the Y₂O₃:Eu³⁺ fibers were studied, in contrast with those of bulk powders. The results indicated that in the present Y₂O₃:Eu³⁺ fibers the excited charge transfer band had slightly blue shift in comparison with that in the bulk due to weaker covalence of Eu-O bonds. In addition, both of the lifetimes of the ⁵D₁ and ⁵D₀ states in the fibers became shorter than that in the bulk due to improved nonradiative transition rates.     

Emission analysis of Dy and Pr:Bi2O3-ZnF2-B2O3-Li2O-Na2O glasses

In this paper, we present the spectral results of Dy³⁺ and Pr³⁺ (1.0 mol%) ions doped Bi₂O₃-ZnF₂-B₂O₃-Li₂O-Na₂O glasses. Measurements of X-ray diffraction (XRD), differential scanning calorimetry (DSC) profiles of these rare-earth ions doped glasses have been carried out. From the DSC thermograms, glass transition (T_g), crystallization (T_c) and melting (T_m) temperatures have been evaluated. The direct and indirect optical band gaps have been calculated based on the glasses UV absorption spectra. The emission spectrum of Dy³⁺:glass has shown two emission transitions ⁴F_7/2→⁶H_15/2 (482 nm) and ⁴F_7/2→⁶H_13/2 (576 nm) with an excitation at 390 nm wavelength and Pr³⁺:glass has shown a strong emission transition ¹D₂→³H₄ (610 nm) with an excitation at 445 nm. Upon exposure to UV radiation, Dy³⁺ and Pr³⁺ glasses have shown bright yellow and reddish colors, respectively, from their surfaces.     

Zeeman mapping of exciton localization in self-assembled CdSe quantum dots using diluted magnetic semiconductors

Localization of exciton wavefunctions in self-assembled quantum dots (QDs) has been investigated using CdSe QDs embedded in ZnMnSe. This system was chosen so as to make use of the giant Zeeman splitting in the diluted magnetic semiconductor (DMS) ZnMnSe, which enables one to map how the exciton wavefunction is distributed between the QDs and the surrounding matrix. Two series of CdSe QDs in ZnMnSe were prepared for this investigation by molecular beam epitaxy (MBE), either by varying the CdSe coverage while keeping a constant Mn concentration in ZnMnSe; or by varying the Mn concentration in the matrix while maintaining a constant CdSe coverage. Photoluminescence (PL) experiments show a systematic evolution of the CdSe QDs with increasing CdSe coverage; and also reveal the role of Mn in nucleating (“seeding”) the self-assembly of the QDs. By simultaneously measuring the Zeeman shifts of the PL peaks from both the CdSe QDs and their ZnMnSe matrix, we are able to extract information on exciton localization in the QDs and its dependence on the degree of development of the self-assembled CdSe QDs with increasing CdSe coverage.     

Strong cooperative upconversion luminescence of ytterbium doped oxyfluoride nanophase vitroceramics

The strong 479.1 nm blue cooperative upconversion luminescence of ytterbium Yb³⁺ ion doped oxyfluoride nanophase vitroceramics (Yb:FOV) is studied in this article. It is found that the 479.1 nm blue cooperative upconversion luminescence strength of Yb(5):FOV is 230 times greater than that of fluoride glass Yb(3):ZBLAN. The large enhancement on cooperative upconversion blue luminescence of this article results from the comprehensive improvement on the aspects of better coupled chance of the Yb³⁺-Yb³⁺ cluster, less cross-relaxation, better concentration contribution of Yb³⁺ activator, non-saturation, and better upconversion luminescence efficiency.     

Si-based two-dimensional photonic crystals coupled to one-dimensional Bragg mirrors

Planar two-dimensional photonic crystals can be combined with a one-dimensional Bragg mirror to control the quality factor and out-of-plane coupling of optical Bloch modes. We have investigated the optical properties of such structures fabricated on silicon. The photonic crystals are fabricated in the upper Si layer deposited on top of quarter-wave thick SiO₂-polycrystalline Si layers. The optical properties are probed by the room-temperature photoluminescence of Ge/Si self-assembled islands as an internal source. We show that an enhancement of the quality factor can be obtained by controlling the thickness of the silicon upper layer in which the two-dimensional photonic crystal is etched and by controlling the air filling factor of the photonic crystal. Quality factors of 2200 around 1100 nm are obtained by this method for defect-free photonic crystals with a square lattice pattern. The experimental results are supported by three-dimensional finite-difference time-domain (FDTD) calculations of the radiated modes for the investigated structures.     

Spin-dependent electron transport in a type II GaInAsSb/p-InAs heterojunction doped with Mn in quantized magnetic fields

We report a study of spin-related magnetotransport properties of a type II broken-gap heterostructure formed by InAs substrate bulky doped with Mn and δ-Mn-doped GaInAsSb epilayer. Planar and vertical quantum magnetotransport in a 2D-electron-hole system at the single type II broken-gap InAs/GaInAsSb heterointerface was investigated in high magnetic fields under the quantum Hall regime up to 15 T at low temperature (T=1.5 K). The I-V characteristics near the dielectric phase boundary show the step-like behavior that corresponds to the quantum conductance in a disordered 2D structure through the extended edge states of the nearest Landau level closest to the Fermi level. The value of these steps is determined by the orientation of the 2D-electron spin at the Landau level and the magnetic moment of Mn in the δ-layer.     

Nano-star formation in Al-doped ZnO thin film deposited by dip-dry method and its characterization using atomic force microscopy, electron probe microscopy, photoluminescence and laser Raman spectroscopy

Zinc oxide doped with Al (AZO) thin films were prepared on borosilicate glass substrates by dip and dry technique using sodium zincate bath. Effects of doping on the structural and optical properties of ZnO film were investigated by XRD, EPMA, AFM, optical transmittance, PL and Raman spectroscopy. The band gap for ZnO:Al (5.0 at. wt.%) film was found to be 3.29 eV compared with 3.25 eV band gap for pure ZnO film. Doping with Al introduces aggregation of crystallites to form micro-size clusters affecting the smoothness of the film surface. Al³⁺ ion was found to promote chemisorption of oxygen into the film, which in turn affects the roughness of the sample. Six photoluminescence bands were observed at 390, 419, 449, 480, 525 and 574 nm in the emission spectra. Excitation spectra of ZnO film showed bands at 200, 217, 232 and 328 nm, whereas bands at 200, 235, 257 and 267 nm were observed for ZnO:Al film. On the basis of transitions from conduction band or deep donors (CB, Zn_i or V_OZn_i) to valence band and/or deep acceptor states (VB, V_Zn or O_i or O_Zn), a tentative model has been proposed to explain the PL spectra. Doping with Al³⁺ ions reduced the polar character of the film. This has been confirmed from laser Raman studies.     

Luminescent mechanism of Y2SiO5:Ce phosphor powder

A luminescent mechanism was constructed for the broad band emission spectra of the X₁ phase of the Y₂SiO₅:Ce phosphor powder. Four Gaussian peaks fit to the cathodoluminescent (CL) and photoluminescent (PL) spectra were attributed to the two different sites (A1 and A2) of the Ce³⁺ ion in the host matrix and the difference in orientation of the neighbour ions in the complex crystal structure. Each Ce³⁺ site gives rise to transitions from the 5d to the two (therefore two peaks) 4f energy levels (²F_5/2 and ²F_7/2 due to crystal field splitting). Energy transfer from other defect levels in the matrix was also observed.     

Infrared-to-red upconversion luminescence in samarium-doped antimony glasses

A new antimony-based glass system (K₂O-B₂O₃-Sb₂O₃) having low phonon energy (about 600 cm⁻¹) doped with Sm³⁺ ions has been developed. Infrared reflection spectroscopic (IRRS) studies have been employed to establish its low phonon energy. Ultraviolet-Visible-near infrared (UV-Vis-NIR) absorption and photoluminescence upconversion properties with the spectrochemistry of the 15K₂O-15B₂O₃-70Sb₂O₃ (mol%) glasses have been studied doping with different concentrations (0.1-1.0 wt%) of Sm₂O₃. UV-Vis-NIR absorption band positions have been justified with quantitative calculation of nephelauxetic parameter and covalent bonding characteristics of the host. NIR to visible upconversion has been investigated by exciting at 949 nm at room temperature. Three upconverted bands originating from the ⁴G_5/2→⁶H_5/2, ⁴G_5/2→⁶H_7/2 and ⁴G_5/2→⁶H_9/2 transitions are found to be centered at 566 (green, weak), 602 (orange, weak) and 636 (red, remarkably strong) nm, respectively. These bands have been explained from the evaluation of the absorption, normal (downconversion) fluorescence and excitation spectra. The upconversion processes have been explained by the excited state absorption (ESA), energy transfer (ET) and cross-relaxation (CR) mechanisms involving population of the metastable (storage) energy level (⁴G_5/2) by multiphonon deexcitation effect. It is evident from the IRRS study that the upconversion phenomena are expedited by the low multiphonon relaxation rate in antimony glasses owing to their low phonon energy (602 cm⁻¹, the main and highest intensity Sb-O-Sb stretching band) which is very close to that of fluoride glasses (500-600 cm⁻¹).     

Optical property investigation of SiGe nanocrystals formed by electrochemical anodization

We report on the optical property investigation of SiGe nanocrystals (NCs) prepared by electrochemical anodization (ECA) of SiGe layer grown by ultrahigh vacuum chemical vapor deposition (UHVCVD). At room temperature, SiGe NCs with higher Ge content demonstrate a redshift of the photoluminescence (PL) peak compared to Si NCs. It was found that the surface chemical composition, density, and the size of the SiGe NCs were very sensitive to the annealing conditions. Various spectroscopy measurements such as PL, FTIR, and XPS have been carried out to reveal the mechanism of the PL peak transition. The results indicated that the PL peak position was determined by two major factors, namely, interface state density and the size of SiGe NCs. It was shown that the higher the interface state density, the more significant the redshift of the peak position. While the smaller the size of the SiGe NCs, the more significant the quantum size effects become, resulting in the blueshift of the PL peak position.