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Here, we report the formation of twins and grain size dependence of twin density in nanocrystalline (NC) copper films fabricated by pulsed laser deposition. It is found that the percentage of grains containing twins decreases with decreasing grain size in the grain size range of 2–10?nm. Surprisingly, although the twins were formed during the deposition process without mechanical deformation, our analysis suggests that they are most likely deformation twins formed under high internal stress existing in the NC Cu films. This phenomenon may also happen in other NC metallic thin films where internal stresses are high. 相似文献
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The grain size distributions and related mechanisms in nanocomposite films with nanostructures comprising a nanocrystalline (nc) phase surrounded by an amorphous (a) matrix under different amorphous phase amounts (V a) have been analyzed by using a Monte Carlo grain growth model. The results show that with the V a value increasing to a critical value of ~28%, the grain size distribution approaches lognormality, and it becomes off-lognormal when the V a value is larger or smaller than ~28%. The simulated results are in a good agreement with the experiment. It is shown that the homogenous or inhomogeneous grain growth mode, determined by the energy exerted on the grain boundary, originates in lognormal or off-lognormal grain size distributions in nanocomposite films. Also, in a system with lognormal grain size distribution, the amorphous phase just covers all grain boundaries (GBs) and the length obtained by summing the boundary circumference of all nanograins is the longest. It is expected that this microstructure can result in exceptional properties of nanocomposite films. 相似文献
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InP film samples were prepared by spray pyrolysis technique using aqueous solutions of InCl3 and Na2HPO4, which were atomized with compressed air as carrier gas onto glass substrates at 500°C with different thicknesses of the films. It is found that the resistivity of the polycrystalline films strongly depends on the grain size. It is observed that the grain size of the films increase with the decrease of the energy band gap and strain of the film. The changes observed in the energy band gap and strain related to the film grain size of the films are discussed in detail. 相似文献
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C.V. Thompson 《Interface Science》1998,6(1-2):85-93
Grain growth in thin films is usually abnormal, leading not only to an increase in the average grain size, but also to an evolution in the shape of the grain size distribution and to an evolution in the distribution of grain orientations. The latter can be driven by surface, interface or strain energy minimization, depending on film and substrate properties and on deposition conditions, and can lead to different final textures depending on which energy dominates.In semiconductor films, as in other materials, grain growth stagnation coupled with texture-selective driving forces leads to secondary grain growth, the rate of which is higher in thinner films. Self ion-bombardment enhances the rate of pre-stagnation grain growth, and doping of Si with electron donor leads to enhanced pre-stagnation grain growth as well as surface-energy-driven secondary grain growth. The effects of ion-bombardment and dopants on grain growth in Si can be understood in terms of associated increases in point defect concentrations and the effects of point defects on grain boundary mobilities. 相似文献
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Microstructure and roughness improvement of polycrystalline Bi thin films upon pulsed-laser melting 总被引:1,自引:0,他引:1
Bismuth films with different thicknesses have been grown by do sputtering on substrates held at room temperature. The films are always formed by columnar crystals with a grain size comparable to the film thickness which lead to surface roughness. It increases with the thickness of the films and has a strong influence on the film optical properties. The films have been irradiated with nanosecond laser pulses, and real-time reflectivity measurements during the irradiation were used to follow the changes in the film optical properties. It will be shown that pulsed-laser irradiation of films thinner than 100 nm improves substantially their surface roughness and their crystalline quality by increasing the grain size at least one order of magnitude. 相似文献
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M. Thambidurai N. Muthukumarasamy N. Murugan Dhayalan Velauthapillai S. Agilan R. Balasundaraprabhu 《Applied Physics A: Materials Science & Processing》2011,104(4):1129-1136
Design of experiment (DOE) based on central composite design (CCD) has been employed for the development of a mathematical
model correlating the important process parameters like thiourea concentration (U), annealing temperature (A), rotational speed (S), and annealing time (T) of the spin coating process for the preparation of CdS thin films. The experiments were conducted as per the design matrix.
Nanocrystalline CdS thin films have been prepared using cadmium nitrate and thiourea as precursors by sol gel spin coating
method using the results of the mathematical model. The prepared CdS films have been characterized and the crystal structure
and grain size of the samples were analyzed using X-ray diffraction technique. The adequacy of the developed models was checked
by analysis of variance (ANOVA) technique. The accuracy of prediction has been carried out by conducting confirmation test.
Using this model, the main effect of process parameters on grain size of CdS films have been studied. These parameters were
optimized to obtain minimum grain size using the Microsoft excel solver. The results have been verified by depositing CdS
films using the optimized conditions. These films have been characterized using X-ray diffraction technique and the grain
size is found to be 8.8 nm. The high resolution transmission electron microscopy (HRTEM) analysis showed the grain size of
the prepared CdS film to be ∼7 nm. UV–vis spectroscopy analysis revealed that CdS films exhibited quantum confinement effect. 相似文献
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P. Mallick Chandana Rath J. K. Dash R. Biswal D. C. Agarwal D. Behera D. K. Avasthi D. Kanjilal P. V. Satyam N. C. Mishra 《Indian Journal of Physics》2010,84(10):1399-1404
NiO thin films grown on Si(100) substrates by electron beam evaporation, were sintered at 500 °C and 700 °C. The films were
irradiated with 120 MeV Au9+ ions. Irradiation had different effects depending upon the initial microstructure of the films. Irradiation of the films
at a fluence of 3 × 1011 ions cm−2 leads to grain growth for the films sintered at 500 °C and grain fragmentation for the films sintered at 700 °C. At still
higher fluences of irradiation, grain size in 500 °C sintered film decreased, but the same improved in 700 °C sintered film.
Associated with the grain size, texturing of the films was also shown to undergo significant modifications under irradiation. 相似文献
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本文采用在金刚石表面蒸镀铝电极的方法测量金刚石膜的电阻率。样品的Raman,SEM,XRD分析结果表明,金刚石膜的电阻率与晶粒尺寸、晶粒取向和缺陷及杂质有直接关系,大尺度晶粒的金刚石膜具有较高的电阻率,高比例的I(110)/I(111)晶粒取向的金刚石膜具有较高的电阻率;结构缺陷和杂质含量较小的金刚石膜具有较高的电阻率。 相似文献
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采用磁控溅射法制备了Zr-Mo膜,随后在低能静电加速器上分别采用剂量为2.80×1017~1.12 ×1018ions·cm-2的He+、H+离子辐照Zr-Mo膜,利用光学透镜、扫描电镜、原子力显微镜和X射线衍射研究He+、H+离子协同注入效应对Zr-Mo膜微观结构的影响。实验结果表明:原始Zr-Mo膜表层晶粒清晰可见,尺寸约为200nm;辐照效应可导致Zr-Mo膜表层产生微观损伤区域,在注He+基础上注H+导致Zr-Mo膜出现更为严重的损伤现象;离子注入的表面溅射效应可使膜面晶粒边界逐渐刻蚀退让,导致膜面更加光滑、细致;He+、H+ 离子协同注入可使Zr-Mo膜晶格发生畸变,注入期间未使Zr-Mo膜发生吸H相变生成氢化物。 相似文献
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采用射频反应磁控溅射法在玻璃衬底上成功制备出具有c轴高择优取向的ZnO薄膜,利用X射线衍射及紫外-可见吸收和透射光谱研究了氧分压变化对ZnO薄膜的微观结构及光吸收特性的影响。结果表明,当工作气压恒定时,用射频反应磁控溅射制备的ZnO薄膜的生长行为主要取决于成膜空间中氧的密度,合适的氧分压能够提高ZnO薄膜的结晶质量;薄膜在可见光区的平均透过率达到90%以上,且随着氧分压的增大,薄膜的光学带隙发生了一定程度的变化。采用量子限域模型对薄膜的光学带隙作了相应的理论计算,计算结果与对样品吸收谱所作的拟合结果符合较好,二者的变化趋势完全一致,表明ZnO纳米晶粒较小时,薄膜光学带隙的变化与量子限域效应有很大关系。 相似文献
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Fe含量和粒径对Fe/Cu颗粒膜结构和磁性的影响 总被引:4,自引:1,他引:3
采用共蒸发法制备不同组分的Fe/Cu颗粒膜,将样品分两组进行退火和不退火处理. 根据测量及分析,确定了不同成分的Fe/Cu颗粒膜的相组成和晶体结构;找出了 Fe/Cu颗粒膜矫顽力与粒径的关系,利用此关系由自发形核理论可知,提高功率,快速蒸镀薄膜,可得到细密颗粒的Fe/Cu颗粒膜,从而降低矫顽力,减少磁滞损耗. 相似文献
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采用射频磁控溅射镀膜系统,在玻璃衬底上制备了非晶硅(α-Si)/铝(Al)复合薄膜,结合氮气(N2)气氛中低温快速光热退火制备了纳米晶硅(nc-Si)薄膜;利用光学显微镜、共焦光学显微仪、X射线衍射(XRD)仪、拉曼散射光谱(Raman)仪和紫外-可见光-近红外分光光度计(UV-VIS-NIR)对纳米晶硅薄膜的表面形貌、物相及光学性能进行了表征,研究了退火工艺对薄膜性能的影响。结果表明: 300 ℃,25 min光热退火可使α-Si/Al膜晶化为纳米晶硅薄膜,晶化率为15.56%,晶粒尺寸为1.75 nm;退火温度从300 ℃逐渐升高到400 ℃,纳米晶硅薄膜晶粒尺寸、晶化率、带隙逐渐增加,表面均匀性、晶格畸变量逐渐减小;退火温度从400 ℃逐渐升高到500 ℃,纳米晶硅薄膜的晶粒尺寸、晶化率继续增加,带隙则逐渐降低;采用纳米晶硅薄膜的吸光模型验证了所制备的纳米晶硅薄膜的光学特性,其光学带隙的变化趋势与吸光模型得出的结果一致。 相似文献
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P. Dawson J. W. Haas III K. B. Alexander J. Thompson T. L. Ferrell 《Surface science》1991,250(1-3):L383-L388
The intensity of surface enhanced Raman scattering from benzoic acid derivatives on mildly roughened, thermally evaporated Ag films shows a remarkably strong dependence on metal grain size. Large grained (slowly deposited) films give a superior response, by up to a factor of 10, to small grained (quickly deposited) films, with films of intermediate grain size yielding intermediate results. The optical field amplification underlying the enhancement mechanism is due to the excitation of surface plasmon polaritons (SPPs). Since surface roughness characteristics, as determined by STM, remain relatively constant as a function of deposition rate, it is argued that the contrast in Raman scattering is due to differences in elastic grain boundary scattering of SPPs (leading to different degrees of internal SPP damping), rather than differences in the interaction of SPPs with surface inhomogeneities. 相似文献
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Transparent conducting zinc oxide thin films were prepared by spray pyrolytic decomposition of zinc acetate onto glass substrates with different thickness. The crystallographic structure of the films was studied by X-ray diffraction (XRD). XRD measurement showed that the films were crystallized in the wurtzite phase type. The grain size, lattice constants and strain in films were calculated. The grain size increases with thickness. The studies on the optical properties show that the direct band gap value increases from 3.15 to 3.24 eV when the thickness varies from 600 to 2350 nm. The temperature dependence of the electrical conductivity during the heat treatment was studied. It was observed that heat treatment improve the electrical conductivity of the ZnO thin films. The conductivity was found to increase with film thickness. 相似文献
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Jiejie Li Binbin Lu Hongjian Zhou Chenyao Tian Yuehui Xian Guoming Hu Re Xia 《Physics letters. A》2019,383(16):1922-1928
A series of molecular dynamics simulations has been carried out to study the mechanical properties of nanocrystalline platinum. The effects of average grain size and temperature on mechanical behaviors are discussed. The simulated uniaxial tensile results indicate the presence of a critical average grain size about 14.1 nm, for which there is an inversion of the conventional Hall-Petch relation at temperature of 300 K. The transition can be explained by a change of dominant deformation mechanism from dislocation motion for average grain size above 14.1 nm to grain boundary sliding for smaller grain size. The Young's modulus shows a linear relationship with the reciprocal of grain size, and the modulus of the grain boundary is about 42% of that of the grain core at 300 K. The parameters of mechanical properties, including Young's modulus, ultimate strength, yield stress and flow stress, decrease with the increase of temperature. It is noteworthy that the critical average grain size for the inversion of the Hall-Petch relation is sensitive to temperature and the Young's modulus has an approximate linear relation with the temperature. The results will accelerate its functional applications of nanocrystalline materials. 相似文献