B2O3对6ST-4LA微波介质陶瓷结构与性能的影响

为降低0.6SrTiO3-0.4LaAlO3(简称6ST-4LA)微波介质陶瓷的烧结温度,采用固相反应法,研究了B2O3对其结构与性能的影响.结果表明:添加B2O3可有效地降低6ST-4LA陶瓷的烧结温度,由1550℃降至1450℃;主晶相仍为赝立方钙钛矿结构固溶体,但有第二相的出现,其含量随着B2O3添加量的增加先降低后升高.当B2O3添加量为0.50wt;在1450℃下烧结时,6ST-4LA陶瓷获得最佳微波介电性能:εr=44.46,Q·f=51127 GHz,τf=-2.3×106/℃.     

V2O5掺杂对0.6SrTiO3-0.4LaAlO3微波介质陶瓷结构与性能的影响

采用固相反应法,研究了V2O5添加量与0.6SrTiO3-0.4LaAlO3(简称6ST-4LA)陶瓷烧结性能及介电性能之间的变化关系.结果表明:少量V2O5的引入未改变陶瓷的晶相组成,主晶相仍为SrTiO3基固溶体,适量添加V2O5不仅能显著降低6ST-4LA陶瓷的烧结温度,而且能增大其介电常数和品质因数(Q·f),调节谐振频率温度系数τf;随着V2O5添加量的继续增加,有第二相SrVO3出现并逐渐增多.当V2O5添加量为0.10wt;,1450 ℃烧结时,6ST-4LA陶瓷获得最佳微波介电性能:εr=46.46,Q·f=59219 GHz,τf=3×10-6 /℃.     

ZnO-B2O3玻璃对0.95(Mg0.9Zn0.1)TiO3-0.05CaTiO3陶瓷烧结特性和微波介电性能的影响

采用传统的固相烧结工艺制备0.95(Mg0.9Zn0.1) TiO3-0.05CaTiO3陶瓷.研究了ZnO-B2O3玻璃掺杂对0.95(Mg0.9Zn0.1)TiO3-0.05CaTiO3陶瓷烧结特性、晶相成分、微观结构和微波介电性能的影响.适量的ZnO-B2O3玻璃掺杂能有效地降低烧结温度,促进致密化,从而提高微波介电性能.随着烧结温度的升高,密度、介电常数εr和Q×f值均达到最大值之后再逐渐减小.当ZnO-B2O3玻璃添加量为5wt;时,0.95(Mg0.9Zn0.1) TiO3-0.05CaTiO3陶瓷在1075℃烧结3h,获得最佳微波介电性能:εr=19.5,Q×f=62100 GHz,τf=-13 ppm/℃.     

B2O3掺杂对0.69CaTiO3-0.31LaAlO3微波介质陶瓷的性能影响

采用固相反应法,研究了B2O3对0.69CaTiO3-0.31LaAlO3微波介质陶瓷烧结性能与介电性能的影响.通过X射线衍射分析表明,B2O3的引入未改变陶瓷的晶相组成.添加适量B2O3的可有效的降低0.69CaTiO3-0.31LaAlO3介电陶瓷的烧结温度,增强致密性并提高介电性能.在1500℃烧结温度,B2O3掺杂量为0.3wt;时,0.69CaTiO3-0.31LaAlO3陶瓷获得最佳介电性能:εr≈45.4,Qf≈52800 GHz,τf≈8.78 ppm/℃.     

WO3掺杂对BST微波介质陶瓷性能的影响

采用固相反应法,研究了WO3掺杂对Ba4Sm9.33Ti18O54(简称BST)微波介质陶瓷相组成、显微结构、烧结性能与介电性能的影响.结果表明:适量添加WO3能通过不等价离子取代Ti位,产生晶格缺陷,促进离子扩散,不仅能有效降低BST陶瓷的烧结温度至1280 ℃,而且能减少氧空位的产生,降低介电损耗.同时适量WO3时有新相BaWO4生成,它的出现也有利于改善其介电性能.添加0.25wt; WO3的BST陶瓷在1280 ℃烧结3 h时取得最佳介电性能:εr=80.4,Q·f=11740.85 GHz,Υf=-23.3×10-6/℃.     

Li2CO3掺杂对0.94Mg2SiO4-0.06Ca0.9Sr0.1TiO3陶瓷微波介电性能的影响

采用传统固相反应法,研究了Li2CO3掺杂对0.94Mg2SiO4-0.06Ca0.9Sr01TiO3微波介质陶瓷的烧结性能和介电性能的影响.结果表明,烧结助剂Li2 CO3的引入未改变陶瓷的相组成.添加适量的Li2CO3可以促进烧结,烧结温度由1440℃降低到1355℃,而且介电性能也得到了优化,Q ×f值有明显的提高;过量Li2CO3的引入,降低了材料的致密性,增加了陶瓷的介电损耗.在1355℃烧结,保温3h,添加0.50wt; Li2 CO3的0.94Mg2SiO4-0.06Ca09Sr0.1TiO3陶瓷获得最佳的介电性能:εr=7.96,Q×f=96409 GHz(f=14.571 GHz),τf=+4.62 ppm/℃.     

B2O3-CuO-Li2CO3对CSLST陶瓷微波介电性能影响的研究

研究了添加5;B2O3-CuO基础上再添加不同含量的Li2CO3 复合烧结助剂对(Ca0.9375Sr0.0625)0.3(Li0.5Sm0.5)0.7TiO3 (CSLST)陶瓷的烧结行为及微波介电性能的影响.研究结果表明:添加复合烧结助剂的陶瓷烧结后其晶相仍呈斜方钙钛矿结构.在不劣化微波介电性能的条件下,陶瓷的烧结温度可降至950 ℃,随Li2CO3含量的增加,添加复合烧结助剂的CSLST陶瓷的体积密度和介电常数εr 逐渐降低.当Li2CO3添加量为0.5 ;时,在950 ℃保温5 h,所制得的陶瓷具有优良的微波介电性能:εr=84.7,Qf=1929 GHz,τf=28.76×10-6 /℃.     

Al2O3掺杂对微波介质陶瓷Ca0.16Sr0.04Li0.4Nd0.4TiO3烧结特性和微波介电性能的影响

采用固相反应法在1300℃烧结4h得到了致密的具有钙钛矿结构的Ca0.16Sr0.04Li0.4Nd0.4TiO3微波介质陶瓷.通过X射线衍射仪、扫瞄电子显微镜和矢量网络分析仪系统的研究了不同含量Al2O3掺杂对Ca0.16Sr0.04Li0.4Nd0.4TiO3(CSLNT)陶瓷的烧结行为、晶体结构、显微形貌以及微波介电性能的影响.结果表明,对于CSLNT+ xwt;Al2O3陶瓷,随着Al2O3掺杂量的增加,介电常数(εr)有轻微的降低,而温度系数(τf)有所增加;由于第二相的出现导致了品质因子(Q·f)先增后减.当Al2O3掺杂量为2wt;时,其介电性能最佳的致密化烧结温度为1200℃,此时具有最佳的微波介电性能:εr=112.6,Q·f=1698 GHz和τf=31.9 ppm/℃.     

MnCO3掺杂对Ba4Sm9.33Ti18O54微波介质陶瓷性能的影响

采用固相反应法,研究了MnCO3掺杂对Ba4 Sm9.33Ti18O54(简称BST)微波介质陶瓷结构与性能的影响.结果表明:适量掺杂MnCO3,不仅可有效的降低BST陶瓷的烧结温度至1240℃,而且能通过Mn3++ Ti3+→Mn2+ Ti4+反应,抑制Ti4被还原及第二相Sm2Ti2O7出现,改善其介电性能.当MnCO3添加量为0.10wt;,在1240℃温度烧结3h时,BST陶瓷获得最佳的介电性能:εr=83.64,Q·f=10007 GHz,1=0.3×10-6/℃.     

ZnO-B2O3-SiO2玻璃对硅酸锌陶瓷结构与微波介电性能的影响

研究了不同添加量的ZnO-B2 O3 -SiO2 (ZBS)玻璃作为烧结助剂对硅酸锌陶瓷的结构及微波介电性能的影响.研究结果表明:添加ZnO-B2 O3-SiO2玻璃的陶瓷烧结后其主晶相仍呈硅锌矿结构,并且硅酸锌陶瓷的烧结温度从1300℃降低到900℃.随着玻璃添加量的增加,陶瓷的介电常数(εr)和品质因数(Qf)呈逐渐降低的趋势,当玻璃添加量为20 wt;时,900℃保温2h所制备的陶瓷具有较优良的微波介电性能:εr=6.85,Qf =31690 GHz,τf=- 28×10-6/℃,在低温共烧陶瓷领域有着潜在的应用价值.     

Modelling of mechanism of agglomeration of KCl crystallization

The article presents an analysis into agglomeration during KCl vacuum crystallization. The theoretical and experimental investigations into the mechanism of agglomeration during mass crystallization result in an extension of the growth phenomena within the known model equations. The basis for this is essentially constituted by the collision model concepts of the theory of floculation in disperse systems. The parameters derived from the microprocess analysis (energy dissipation, content of solids, growth rate of individual grains) lead to model equations which are confirmed by laboratory and test trials.     

Relationship of Morphological Types of Dynamic Forms of Crystals

Crystallography Reports - The relationship of morphological spectra (sets of data on the morphological types of real polyhedral crystals and their probabilities under current physicochemical...     

Velocities of Disappearance and Lifetime of Faces of Growing Crystals

The formulae for absolute R_disap and relative R velocities of disappearance and lifetime τ of faces of growing crystals have been derived for stationary growth. It was shown that the quantities are determined by the relative growth velocity R_A/R_critA of the vanishing face A with respect to the critical growth velocity R_critA and by the geometry of a crystal expressed by the trigonometric functions of interfacial angles β and γ formed between face A and the adjacent faces. R increases and τ decreases with the increase in R_A/R_critA to certain limiting values. The calculations have been verified and illustrated by the experimental results for triclinic potassium bichromate (KBC) crystals. Results enable ones to predict values of velocities of disappearance and lifetimes of undesirable, supplementary faces of any real crystal.     

Development of Pauling's concepts of geometric characteristics of atoms

The evolution of the geometric characteristics introduced by Pauling and their dependence on the specific features of the structure and chemical bonds have been considered. The values of the covalent and van der Waals radii are given as well as their relationships and mutual transitions.     

A review of measurement of thermophysical properties of silicon melt

Measurements of thermophysical properties of Si melt and supplementary study of X-ray scattering/diffraction by the authors' group were reviewed. The values obtained differed variously from those of literature. Density was 2–3% larger, surface tension 20–30% smaller, viscosity up to 40% larger, electrical conductivity 8% smaller, spectral emissivity more or less in good agreement with literature values, and thermal diffusivity a few percent larger. An anomalous density jump was found near the melting point. Surface tension and viscosity also showed anomaly. A strange time-dependent change of density was observed over 3 h after melting. X-ray analyses suggested a slight change in local atom ordering, but showed no sign of cluster formation. An addition of 0.1 at% gallium caused the density jump to disappear, while that of boron caused no change. An EXAFS study of the former melt indicated a strong interaction between Ga and Si atoms as if molecules of GaSi₃ existed. The implications of the measured properties are a possibility of soft-turbulence in an Si melt in a relatively large crucible, a more complicated manner of intake of oxygen depleted molten Si from the free surface region to underneath the growing crystal, and a relaxation of the melt after melting arising from trapped gas species.     

Dependence of the parameters of equations of viscous flow on chemical composition of silicate melts

The temperature dependence of viscosity of silicate melts is discussed in the framework of the Avramov–Milchev (AM) equation. The composition is described by means of two parameters: the molar fraction, x, and the “lubricant fraction”, l. The molar fraction is the sum of the molar parts x_i of all oxides dissolved in SiO₂, the molar fraction of the latter being 1 ? x. It is shown that, with sufficient precision, two of the parameters of the AM equation can be presented as unique functions of the molar fraction. On the other hand, x is not sufficient to determine properly the reference temperature T_r , at which viscosity is η_r = 10¹³ [dPa.s]. Therefore, additional parameter, “lubricant fraction” l, is introduced. For each of the components, l_i is a product of molar part x_i and a specific dimensionless coefficient 0 ≤ k_i ≤ 1 accounting for the specific contribution of this component to the increased mobility of the system. It is demonstrated that, for l > 0, the reference temperature is related to the “lubricant fraction” l through the reference temperature T_r,SiO2 of pure SiO₂.     

Comparative analysis of two methods of calculation of the orientation of domain walls in ferroelastics

Two types of domain-wall equations are analyzed: the equations derived by the Sapriel method and the equations obtained by interface matching of the thermal-expansion tensor. It is shown that, for W-type domain walls, these methods yield the same equations. For W′-type domain walls, the equations obtained by different methods coincide for proper ferroelastics and differ for improper ferroelastics.     

Generation of crystal structures of heteromolecular compounds by the method of discrete modeling of packings

Within the method of discrete modeling of packings, an algorithm of generation of possible crystal structures of heteromolecular compounds containing two or three molecules in the primitive unit cell, one of which has an arbitrary shape and the other (two others) has a shape close to spherical, is proposed. On the basis of this algorithm, a software package for personal computers is developed. This package has been approved for a number of compounds, investigated previously by X-ray diffraction analysis. The results of generation of structures of five compounds—four organic salts (with one or two spherical anions) and one solvate—are represented.