低温条件下单晶氮化铝纳米线生长机理的研究

在25mL的不锈钢反应釜中，利用无水三氯化铝与叠氮化钠在无溶剂的条件下直接反应，成功地合成出了单晶氮化铝纳米线，反应温度为450℃，有效反应时间为24h.高分辨率透射电子显微镜测试结果显示，纳米线多为长直线状外貌特征，直径在40—60nm范围内，最大长度可达几个微米.高分辨率电子衍射和X射线衍射结果都表明，多数纳米线为六方结构，也有少量呈现面心立方结构.同时，提出了长直线状六方和面心立方单晶氮化铝纳米线的生长机理的假设，并对六方单晶氮化铝纳米线生长方向的人工控制也进行了讨论. 关键词： 六方单晶氮化铝 纳米线 X射线衍射 透射电子显微镜     

六方单晶氮化铝薄膜的合成与紫光发光机理

利用无水三氯化铝与叠氮化钠在无溶剂的条件下直接反应,成功地合成出六方单晶氮化铝(h-AlN)薄膜.反应温度为450℃,有效反应时间为20 h.高分辨率透射电镜发现为薄膜形态;电子衍射和X射线衍射结果都表明,氮化铝薄膜为六方结构.光致发光实验显示,在可见光范围内有一较强的辐射峰,中心位于413 nm处,半高宽约为5 nm.同时,本文对六方单晶氮化铝薄膜的生长机理和光致发光机理也进行了讨论.     

等离子体增强脉冲激光沉积o-BN薄膜

利用等离子体增强脉冲激光沉积系统在Si（100）基底上沉积出了高质量的o-BN薄膜,利用红外光谱（FTIR）、X射线衍射谱（XRD）和原子力显微镜照片对o-BN薄膜进行了表征.通过红外光谱（FTIR）得到o-BN薄膜的红外峰特征峰值为1189cm^-1,1585cm^-1和1450cm^-1;由XRD谱得到o-BN薄膜的（111）,（020）,（021）,（310）和（243）各晶面的衍射峰, 特别是（310）和（243）晶面的衍射峰非常强;通过原子力显微镜照片清楚看到BN薄膜具有尖状突起的表面形貌. 关键词： 等离子体增强脉冲激光沉积 氮化硼薄膜 X射线衍射谱     

空心微球/网络复合型碳泡沫材料制备与机理分析

在Klett等人于2000年制备的韧带网络型碳泡沫和Bruneten等人在2002年制备了一种空心微球碳泡沫材料结构的基础上,分别经过微观结构优化、碳化、石墨化处理,制备出了一种空心微球/网络复合型碳泡沫材料.扫描电镜和体视显微镜测试结果显示网络韧带和球形空腔呈现明显的空间周期性.X射线衍射(X-ray diffraction,XRD)图谱中,26°处的衍射峰表明该试样具有较高的石墨化特征.同时,对该材料的形成机理进行了分析. 关键词： 碳泡沫 微观结构优化 扫描电镜 X射线衍射     

Ti离子注入和退火对ZnS薄膜结构和光学性质的影响

利用真空蒸发法在石英玻璃衬底上制备了ZnS薄膜,将能量80 keV,剂量1×10¹⁷ cm^-2的Ti离子注入到薄膜中,并将注入后的ZnS薄膜进行退火处理,退火温度500—700 ℃.利用X射线衍射（XRD）研究了薄膜结构的变化,利用光致发光（PL）和光吸收研究了薄膜光学性质的变化.XRD结果显示,衍射峰在500 ℃退火1 h后有一定程度的恢复;光吸收结果显示,离子注入后光吸收增强,随着退火温度的上升,光吸收逐渐降低,吸收边随着退火温度的提高发生蓝移;PL显示,薄 关键词： ZnS薄膜 离子注入 X射线衍射 光致发光     

钛-硅系快速热退火固相反应机制的研究

钛膜在10^-7Torr真空中用电子束蒸发沉积在硅单晶片上,以快速热退火方式进行团相反应。转靶X射线衍射分析发现,540—600℃退火后,有两个亚稳相Ti₅Si₄的衍射峰。延长退火时间,第一成核相Ti₅Si₄可持续存在到钛被消耗完,随即转变成稳定相TiSi₂。退火温度高于640℃,形成稳定相TiSi₂。薄层电阻和喇曼散射的测量研究结果表明,与X射线衍射有很好的对应。207和244cm^-1波数处的两个喇曼峰为TiSi₂的特征喇曼峰,而270,297和341cm^-1的三个喇曼峰似乎是由Ti₅Si₄引起。 关键词：     

CF3CDCl2分子红外多光子光热吸收谱

本文报道用铂丝光热吸收池作为探测器得到了CF₃CDCI₂的红外多光子吸收谱。并发现在线性吸收谱中944cm^-1处的吸收峰在多光子吸收谱中分裂为947cm^-1和927cm^-1两个吸收峰。这一现象与科里奥利力和非谐性引起的简正振动的耦合作用有关。这样,在用CF₃CDCI₂/CF₃CHCI₂体系分离氘同位素时,可以根据这一新结果选择更合适的激发波长。实验还发现在线性吸收谱中986cm^-1处的吸收峰在多光子吸收谱中出现约6cm^-2的红移。这种红移现象起源于分子振动能级的非谐性。 关键词：     

铌酸钾钠基无铅压电陶瓷的X射线衍射与相变分析

分析了斜方相、四方相铌酸钾钠基无铅压电陶瓷材料的结构和X射线衍射图谱的特点. 对于铌酸钾钠基压电材料斜方相结构, 从构成晶胞的一个单斜原胞进行分析, 计算出X射线衍射谱上每个衍射角附近的衍射峰数目和相对强度. 提出了2θ在20°—60°范围内根据(1 0 2)衍射峰(52°附近)和(1 2 1)衍射峰(57°附近)劈裂的数目区分斜方和四方相的新方法. 对于多晶陶瓷粉末, 可以更简便的由22°(或45°)附近前后峰的相对高低来判断斜方、四方相. 关键词： 铌酸钾钠 无铅压电陶瓷 X射线衍射 相变     

高压剪切作用下三水铝石的结构稳定性

利用旋转式金刚石对顶砧压机(RDAC)结合显微激光拉曼光谱和微区X射线衍射,研究了三水铝石(γ-Al(OH)₃)在高压剪切作用下的结构稳定性。常温加压至1.5 GPa,旋转180°后,γ-Al(OH)₃的结构开始转变。初始样品在高波数段的4个羟基伸缩振动峰(3363、3434、3524和3618 cm^-1)相继消失,出现3303和3560 cm^-12个新峰。低波数段拉曼谱强度明显减弱,无非晶态宽峰;Al-O-Al变形振动双峰(568、539 cm^-1)和Al-O伸缩振动肩峰(321和307cm^-1)分别融合为一个振动峰;4个羟基变形振动峰(1052、1018、981和922 cm^-1)仍然可见。继续加压至3.5 GPa,旋转360°后卸至常压,高波数段新出现的两个羟基伸缩振动峰、原Al-O-Al变形振动峰和Al-O伸缩振动峰仍然可见。对比准静水压条件下γ-Al(OH)₃高压相的拉曼谱和相转变压力(约2.7 GPa),认为常温高压剪切作用下γ-Al(OH)₃脱羟基生成了H₂O和H₃O^-₂。卸压样品微区的X射线衍射谱进一步揭示,在高压剪切作用下,γ-Al(OH)₃的(OH)-Al-(OH)配位八面体骨架被破坏,沿c轴方向原子叠加的层间距缩小,对称性增强。这种不同于准静水压实验的结构改变来自腔体内压力的不均匀分布(0.5~4.5 GPa)。高压剪切作用下,三水铝石的结构稳定性研究对查明板块冷俯冲带中含水矿物的稳定性,推演俯冲板片的物理化学性质以及板块俯冲的速率具有重要意义。     

NaYF4∶Er3+的水热合成及其紫外上转换发光性能

采用水热法制备了Er³⁺掺杂的NaYF₄上转换发光材料,X射线衍射结果表明,当反应温度为180 ℃和200 ℃时,晶体属于六方晶型和四角晶型混合相态;当反应温度为220 ℃时,该晶体属于纯六方晶型结构。SEM和TEM观察发现,晶粒为六角形,样品颗粒分散性好,平均粒径约为100 nm。荧光光谱测试结果表明,当激发波长为500 nm时,样品发射出紫外光。从Er³⁺能级图谱可以得出,Er³⁺基态电子⁴I_15/2首先跃迁到²H_11/2与⁴S_3/2能级上,随即经过能量转移上转换过程(ETU)分别发射出310 nm和340 nm的紫外光。结合Er³⁺发光机理可以推出上转换峰310 nm和340 nm均属于双光子过程。 研究结果表明,以NaYF₄为基质掺杂Er³⁺产生的紫外上转换光在生物成像、光催化发应及生物标记等方面有着广阔的应用前景。     

Multiphonon absorption in InP

IR absorption measurements have been made using a high resolution Fourier-transform spectrometer on crystals of InP in the region of (400–4000)cm^-1 at temperature between 11–300k. Very weak, new absorption bands, their absorption coefficients are of ∼10^-1cm^-1, were observed at 996cm^-1, 965cm^-1, 932cm^-1, 838cm^-1, 776cm^-1, 742cm^-1, 718cm^-1, 590cm^-1, 558cm^-1 and 538cm^-1. The frequencies and temperature dependence of these weak bands indicate that they arise from three-phonon processes and appropriate assignments are given. We observed using IR absorption technique for the first time the boron contamination in LEC(B₂O₃)-CZ InP crystal. The content of boron contamination has been proved to be of ∼10¹⁶cm^-3.     

InP的多声子红外吸收

利用高分辨的傅里叶光谱仪,在400—4000cm^-1和11—300K范围内,观察到一些其吸收系数为10^-1cm^-1的新弱吸收峰,频率位置为996,965,932,838,806,776,742,718,590,558,538cm^-1。从这些弱吸收峰的频率位置和温度依赖关系,可以认为它们是由于三声子的晶格吸收过程所引起的。对此,我们做了适当的指认。此外,我们首次利用红外吸收法证实,LEC(B₂O₃)-CZInP单晶存在B玷污,其玷污量大约是10¹⁶cm^-3。 关键词：     

Ionic transport in the lithium nitride bromides,Li6NBr3 and Li1 3N4Br

The ionic and electronic conductivities of the lithium nitride bromides Li₆NBr₃ and Li_{1 3}N₄Br have been studied in the temperature range from 50 to 220°C and 120 to 450°C, respectively. Both compounds are practically pure lithium ion conductors with negligible electronic contribution. Li₆NBr₃ has an ionic conductivity Ω of 2 × 10^-6Ω^-1cm^-1 at 100°C and an activation enthalpy for σT of 0.46 eV. Li_{1 3}N₄Br shows a phase transition at about 230°C. The activation enthalpy for σT is 0.73 eV below and 0.47 eV above this temperature. The conductivities at 150 and 300°C were found to be 3.5 × 10^-6 Ω^-1cm^-1 and 1.4 × 10^-3Ω^-1cm^-1, respectively. The crystal structure is hexagonal at room temperature with $\text{a = 7.415 (1)}\text{A}\text{?}$ and $\text{c = 3.865 (1)}\text{A}\text{?}$.     

纯铌酸锂晶体红外光谱的低温研究

测量了同成分纯铌酸锂的低温红外光谱,发现低温下铌酸锂晶体将会出现位于3200 cm^-1左右的新红外吸收峰.研究发现该峰与晶体中的氢离子无关,并且其峰强和峰形都随温度的升高发生复杂的变化.基于上述实验结果,认为该峰应该起源于电子在相邻的小极化子（Nb⁴⁺_Li）和自由极化子（Nb⁴⁺_Nb）之间的跃迁.另外,通过拟合发现新红外吸收峰可分解成三个高斯峰,这三峰应归因于能量有细微差别的三种跃迁. 关键词： 铌酸锂 红外吸收光谱 杂质缺陷     

Raman scattering studies of the magnetic ordering in hexagonal HoMnO3 thin films

We present the results of the temperature dependence of the Raman spectra of hexagonal HoMnO₃ thin films in the 13–300 K temperature range. The films were grown on Pt(111)//Al₂O₃ (0001) substrates using the laser ablation method. In the HoMnO₃ thin films, we initially observedseveral broad Raman peaks at ∼510, 760, 955, 1120, and 1410 cm⁻¹. These broad Raman peaks display an anomalous behavior near the magnetic transition temperature, and the intensity difference of the Raman spectra at different temperatures shows several pairs of negative and positive peaks as the temperature is lowered below the Néel temperature. Our analyses indicate that all the broad peaks are correlated with magnetic ordering, and we have assigned the origin of all the broad peaks. Purely on the basis of the Raman analysis, we have deduced the Néel temperature and the spin exchange integrals of HoMnO₃ thin films. We also investigated the effects of the growth condition on the strongest broad peak at ∼760 cm⁻¹, which is related with pure magnetic ordering. This result indicates that the oxygen defect in the HoMnO₃ sample has negligible effect on magnetic ordering. Copyright © 2009 John Wiley & Sons, Ltd.     

Sodium beta-alumina thin films as gate dielectrics for A1GaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

<正>Sodium beta-alumina（SBA） is deposited on AlGaN/GaN by using a co-deposition process with sodium and Al₂O₃ as the precursors.The X-ray diffraction（XRD） spectrum reveals that the deposited thin film is amorphous.The binding energy and composition of the deposited thin film,obtained from the X-ray photoelectron spectroscopy（XPS） measurement,are consistent with those of SBA.The dielectric constant of the SBA thin film is about 50.Each of the capacitance-voltage characteristics obtained at five different frequencies shows a high-quality interface between SBA and AlGaN.The interface trap density of metal-insulator-semiconductor high-electron-mobility transistor（MISHEMT） is measured to be（3.5～9.5）×10¹⁰ cm^-2·eV^-1 by the conductance method.The fixed charge density of SBA dielectric is on the order of 2.7×10¹² cm^-2.Compared with the AlGaN/GaN metal-semiconductor heterostructure high-electronmobility transistor（MESHEMT）,the AlGaN/GaN MISHEMT usually has a threshold voltage that shifts negatively. However,the threshold voltage of the AlGaN/GaN MISHEMT using SBA as the gate dielectric shifts positively from—5.5 V to—3.5 V.From XPS results,the surface valence-band maximum（VBM-E_F） of AlGaN is found to decrease from 2.56 eV to 2.25 eV after the SBA thin film deposition.The possible reasons why the threshold voltage of AlGaN/GaN MISHEMT with the SBA gate dielectric shifts positively are the influence of SBA on surface valence-band maximum （VBM-E_F）,the reduction of interface traps and the effects of sodium ions,and/or the fixed charges in SBA on the two-dimensional electron gas（2DEG）.     

Hydrogen-bonded OH and OD overtone bands and potential energy curve of methanol

The absorption spectra of CH₃OH, CH₃OD, CD₃OH, and CD₃OD as pure liquids and as carbon tetrachloride solutions were measured in the 3,850 – 16,600cm^?1 region. In addition to the various combination bands, the higher overtone bands of the hydrogen-bonded OH stretching vibration of self-associated methanols were observed at ～6470, 9300–9700, and 12,200 – 12,700 cm^?1 with broad half-widths of ～700, ～1200, and ～1800 cm^?1, respectively, and those of the OD stretching vibration, at ～4900, 7200–7400, and 9200–9600 cm^?1 with half-widths of ～370, ～700, and ～1200 cm^?1, respectively. With the aid of the observed frequencies, we determined the single minimum potential energy curve for the hydrogen-bonded OH and OD stretching vibrations of self-associated methanols. Furthermore, the absorption band due to double excitation of two neighboring OH groups linked together by a hydrogen bond was quantitatively analyzed by using the isotopic isolation technique. The double excitation band of CH₃OH as pure liquid was found to appear at 6730 cm^?1 with an absorbance of 0.08 at 1 mm light path length.