Design of optical components for a light emitting diode zoom illumination system

In this article, we report an optical design for a light emitting diode that can achieve high illumination quality using two hyperbolic reflectors. The relative movements of the reflectors and the light source produce a zoom function that can change the illumination beam from convergence to divergence. This study uses optical software ZEMAX for system simulation, and optimization was performed to select reflector parameters with the objectives of both improving floodlight uniformity and spotlight efficiency. Finally, experiments were conducted to verify the validity of the design, and the results corresponded well to the zoom illumination simulations.     

室内可见光通信发光二极管阵列发射性能的研究

提出了一种基于Lambert辐射模型的发光二极管光源阵列发射天线光照度计算模型,对室内可见光通信发射天线进行了优化设计.分析了光源的空间分布形式、光源间距、光源中心光束与系统光轴夹角以及空间分布层间距等因素对光照度均匀性的影响.通过仿真模拟和分析,得到了圆形阵列天线在照度均匀性和通信传输信号稳定性方面都优于相同光源数目的矩形阵列天线,并且提高了10%左右;同时得出了在满足室内照明情形下,发光二极管阵列发射天线照度均匀度随光源间距及光源中心光束与系统光轴夹角的增加均呈现出先增加后减小的变化趋势,因此,光源间距和光源中心光束与系统光轴夹角均存在最优值;照度均匀度随空间分布层间距的减小而增加,并给出了5 m×5 m×3 m普通房间内发射天线阵列设计参数的最优值,使发射性能得到了优化,同时节省光源数13%,降低了成本.这些研究为发射天线系统的设计提供了理论依据,具有实用价值.     

High efficient plastic substrate polymer white light emitting diode

White polymer light emitting diode (PLED) has attracted the interest of researchers by the advantage of having low cost, flexible light sources. One of the major advantages of PLED is that it can be able to fabricate in flexible plastic substrate instead of glass substrate. Generally PLED??s requires a substrate of high refractive index to enhance the amount of trapped light in the device, but the refractive index of flexible plastic substrate is low (n?<?1.6). In this paper, we present a white PLED on a flexible plastic substrate with a new enhancement method. In which the semi-transparent gold layer is sandwiched between the layers of tantalum oxide and molybdenum oxide which does not require a high refractive index substrate. Using this design, the extraction efficiency of the device is increased from 1.5 to 2.1 cw compared to that of the device using glass substrate.     

基于氧化锌纳米线的紫外发光二极管

构建了基于n-ZnO纳米线/p-Si异质结的紫外发光二极管.ZnO纳米线准阵列采用水热法生长于重掺p型Si片上.此法简易，反应温度低，易于大规模生产；其产物ZnO纳米线结晶良好，以c轴为优势取向，光激发下的紫外荧光发射很强.二极管的电学接触采用聚合物填充的In阴极或以氧化铟锡(ITO)玻璃紧压形成阴极.它们的I-V特性体现出良好的二极管性质.在正向偏置电压驱动下，构建的发光二极管可稳定发射波长在387nm的较强的近紫外光和较弱的绿光. 关键词： ZnO纳米线 异质结 电致发光 水热法     

Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices

To form low-resistance Ohmic contact to p-type GaN, InGaN/GaN multiple quantum well light emitting diode wafers are treated with boiled aqua regia prior to Ni/Au (5~nm/5~nm) film deposition. The surface morphology of wafers and the current--voltage characteristics of fabricated light emitting diode devices are investigated. It is shown that surface treatment with boiled aqua regia could effectively remove oxide from the surface of the p-GaN layer, and reveal defect-pits whose density is almost the same as the screw dislocation density estimated by x-ray rocking curve measurement. It suggests that the metal atoms of the Ni/Au transparent electrode of light emitting diode devices may diffuse into the p-GaN layer along threading dislocation lines and form additional leakage current channels. Therefore, the surface treatment time with boiled aqua regia should not be too long so as to avoid the increase of threading dislocation-induced leakage current and the degradation of electrical properties of light emitting diodes.     

Organic light emitting transistors

Organic light emitting transistors which are vertically combined with the organic static induction transistor and organic light emitting diode are fabricated and the device characteristics depending on the structure of gate electrode are investigated. By optimizing the layer thickness and the size of slit-type Al gate electrode, high luminance modulation by low gate voltage as high as 1 V are obtained. The organic light emitting transistor described here is a suitable element for flexible sheet displays.     

Multi-objective design and extended optimization for developing a miniature light emitting diode pocket-sized projection display

This research proposes a new extended optimization method for a miniature light emitting diode (LED) pocket-sized projection display, introducing integration of the Taguchi method and principal component analysis in order to optimize the multiple quality characteristics of an LED pocket-sized projection display. With the aid of interactive optimization, control factors with three different levels are carefully selected in the complicated preliminary experiments. A set of optimal design parameters is well selected for best results on the combined effects of the total luminous flux, illumination uniformity, and the packing size of the system. The selected control factors are inclusive of major lens and system specifications, such as lens overall length, X-CUB semi-aperture, length of light integrator, width of integrator, total internal reflection (TIR) prism entering semi-diameter for the TIR prism, air-gap of the TIR prism, and digital micromirror device (DMD) position; an L18 orthogonal array is applied and implemented in the experiments. According to experimental results, the optimal design parameters for the projection display can be determined as A1 (lens specifications: type I), B3 (lens length: overall length), C1 (X-CUB semi-aperture: 8 mm), D3 (integrator length: 36.6 mm), E2 (integrator width: 3.5 mm), F2 (TIR prism entering semi-diameter: 11 mm), G1 (TIR prism air-gap: 1.0024 mm), and H1 (DMD location: −0:5 mm). In addition, analysis of variance (ANOVA) is also employed to identify the factor A (lens specifications), factor D (integrator length), factor F (TIR prism entering semi-diameter), and factor G (TIR prism air-gap) as key parameters, which account for 71.82% of the total variance. The other factors when compared are found to have relatively weaker impacts on the process design. Furthermore, a confirmation experiment of the optimal design parameters shows that the aforesaid multiple performance characteristics are optimized to achieve the best levels. It is concluded that Taguchi method and principal component analysis (PCA) combine to optimize and then minimize the LED pocket-sized projection display system, which not only yields a sufficient understanding of the effects of control factors, but also produces an optimized design to ensure that the LED pocket-sized projection display system exhibits the best multiple performance characteristics.     

Research on photoelectronics properties of array emitting diode and its light energy distribution in detection screen

According to the principle of multi-screen intersection target measure flying projectile parameters, the photoelectronics properties of array emitting diode that form detection screen in multi-screen intersection target and its light energy distributing were studied. The form of detection screen using array emitting diode and the measure principle of four screens intersection were analyzed. The properties of emitting diode were analyzed based on its compound emitting mechanism and P–N ties internal current carrier. The light energy superposition principle was applied to set up light energy distributing model and give out its arithmetic. Through calculation and analysis, the light energy distributing is asymmetric when being close to diode position and the output variation range of light energy is large relatively. When test position is far from diode, the light energy distributing is uniformity, but the energy is relatively feebleness in edge of screen. Detection screen light energy distribution is trapezoidal in whole screen. The variety of emitting diode luminous flux is very distinct when projectile close to pointing light source, the output signal in received detective circuit is very high which is propitious to improve acquirement rate.     

Light extraction from a light emitting diode with photonic structure in the surface layer investigated by NSOM

We present a light emitting diode with a two-dimensional photonic crystal structure prepared by interference lithography at the light emitting diode surface. The emission maximum is at 850 nm. The two-dimensional photonic crystal structure enhanced the light extraction efficiency by a factor of 1.39. The photonic crystal light emitting diode surface morphology was analyzed by atomic force microscopy. The enhanced extraction efficiency of the photonic crystal diode was documented from L(I) dependencies and was confirmed by near-field studies.     

Microcavity light emitting diodes as efficient planar light emitters for telecommunication applications

Light emitting diodes (LEDs) can be coupled to optical fibers and used in telecommunication applications. Compared to laser diodes, the coupling is usually small, due to the isotropic emission of the source, combined with the large refractive index difference between the semiconductor and the outside medium. However, it is possible to greatly enhance the optical extraction of a planar LED by placing the source inside a microcavity which optical thickness is close to the wavelength of the emitted light. Some elementary design rules of a microcavity light emitting diode (MCLED) are explained here, and are illustrated on a real GaAs/Al_xGa_1−xAs device emitting at 880 nm. The surface external quantum efficiency of this MCLED reaches 14% into air and 20.6% with an encapsulation into an epoxy lens. These values are about 10 times larger than for a usual LED and are in good agreement with theoretical values, calculated with a plane waves model. To cite this article: D. Ochoa et al., C. R. Physique 3 (2002) 3–14     

Light emitting diode as sensor for miniature multispectral radiometer

A methodology is proposed for studying the suitability of the light emitting diode (LED) as the optical sensor of a miniature multispectral radiometer. The optoelectronic properties of three commercially available LEDs of three different wavebands were standardized by measuring the open-circuit voltage and short-circuit currents at different light intensities and different wavelengths of incident radiation. A photoconductive measurement was found to be more useful for obtaining the appropriate optical response and was suggested as the suitable mode of sensing. The sensor performances were demonstrated for both solar photometry and surface reflectance measurements.     

基于量子点和MEH-PPV的白光发光二极管的研究

利用无机纳米材料与有机聚合物材料相结合的方法制备白光发光二极管器件, 研究了蓝光量子点QDs(B)掺杂聚[2-甲氧基-5-(2-乙基己氧基-1, 4-苯撑乙烯撑](MEH-PPV) 复合体系的发光特性及量子点QDs(B) 掺杂浓度(质量分数)不同对器件发光特性的影响. 制备了ITO/PEDOT:PSS/MEH-PPV:QDs(B)/LiF/Al 结构的电致发光器件, 测试了器件的电致发光光谱和电学、光学特性. 当QDs掺杂浓度为40%, 驱动电压为8 V时器件能得到较为理想的白光发射. 同时, 对比研究了非掺杂体系的发光特性, 制备了结构为ITO/PEDOT:PSS/MEH-PPV/QDs(B)/LiF/Al的器件, 掺杂体系相较于非掺杂体系, 器件的最大亮度增大, 启亮电压降低, 并分析了掺杂体系器件性能改善的原因.     

Synthesis and characterization of organic/inorganic heterostructure films for hybrid light emitting diode

Thin-film light emitting devices based on organic materials have been gathering attentions for applying a flat-panel display and a solid-state lighting. Alternatively, inorganic technologies such as Si-based thin-film technology have been growing almost independently. It is then expected that combining the Si-based thin-film technology with the organic light emitting diode (OLED) technology will develop innovative devices. Here, we report syntheses of the hybrid light emitting diode (LED) with a heterostructure consisting of p-type SiC_x and tris-(8-hydroxyquinoline) aluminum films and characterization for the hybrid LEDs. We present the energy diagram of the heterostructure, and describe that the use of high dark conductivities of the p-type SiC_x as well as inserting wide-gap intrinsic a-SiC_x at the p-type SiC_x/Alq interface are effective for improving device performance.     

新型全方位反射铝镓铟磷薄膜发光二极管

提出了一种新型全方位反射铝镓铟磷(AlGaInP)薄膜发光二极管(LED)的结构和制作工艺，在这个结构里应用了低折射率的介质和高反射率的金属联合作为反光镜.用金锡合金(80Au20Sn，重量比)作为焊料把带有反光镜的AlGaInP LED外延片倒装键合到GaAs基板上(RS-LED)，去掉外延片GaAs衬底，把被GaAS衬底吸收的光反射出去.通过与常规AlGaInP 吸收衬底LEDs(AS-LED)和带有DBR的AlGaInP 吸收衬底LEDs(AS-LED(DBR))电、光特性的比较，证明新型全方位反射AlGaInP薄膜LED结构能极大提高亮度和效率.正向电流20mA时，RS-LED的光输出功率和流明效率分别是AS-LED的3.2倍和2.2倍，是AS-LED(DBR)的2倍和1.5倍.RS-LED(20mA下峰值波长627nm)的轴向光强达到194.3mcd，是AS-LED(20mA下峰值波长624nm)轴向光强的2.8倍，是AS-LED(DBR)(20mA下峰值波长623nm)轴向光强的1.6倍. 关键词： 铝镓铟磷 薄膜发光管 全方位反射镜 发光强度     

用于高能激光系统的共孔径光学装置设计

高能激光系统的主要工作方式是利用其精跟踪模块将发射激光传输聚焦至闭环跟踪条件下的目标上,使之受到毁伤或失效。为实现该工作方式,本文研究设计了一套共孔径光学收发装置。该装置的发射系统主要由离轴两反式主望远镜模块、伽利略透射式调焦望远镜模块和光束馈送模块共同组成二级扩束系统,接收系统主要由离轴两反式主望远镜模块、精跟踪成像模块和光束馈送模块共同组成长焦距光学系统,其中光束馈送模块由二向色镜、快速反射镜等光学元件组成。以非相干空间合束的基模高斯光作为激光光源,利用光学设计软件对该装置进行了优化设计。对于发射系统,获得了激光经过调焦望远镜模块不同的调焦量调制后,传输至0.5~5 km处的光斑分布情况,且激光波前像差RMS值均优于λ/20;对于接收系统,由各模块一同构成的成像光学系统的性能经优化后接近衍射极限,其中系统传递函数在70 lp/mm时大于0.6,最后通过样机实验也验证了设计的正确性。本文的设计和实验结果证实了该共孔径光学收发装置结构合理,性能可靠,满足高能激光系统的工程应用需求。     

GaN基高压直流发光二极管制备及其性能分析

GaN基高压直流发光二极管工艺制备, 采用蓝宝石图形衬底(PSS) 外延片制备正梯形芯粒结构的GaN基高压直流LED.相对其他结构器件, 该结构器件发光效率最高, 封装白光后, 在色温4500 K, 驱动电流20 mA时, 光效116.06 lm/W, 对应电压50 V. 测试其I-V曲线表明, 开启电压为36 V, 对应驱动电流为1.5 mA; 在电流15 mA至50 mA时, 光功率随驱动电流增加近似于线性增加, 在此区域光效随电流增加而降低的幅度比较缓慢, 表明GaN基高压直流LED适宜于采用大电流密度驱动, 而不会出现驱动电流密度增加导致量子效率明显下降(efficiency droop), 为从芯片层面研究解决量子效率下降难题提供了一种新思路.     

Optical-fibre remote sensing system of low-level propane gas using a 1·68 μm InGaAs light emitting diode

A fully optical remote detection system for propane gas was realized in real time by a near-infrared absorption method employing a 2-km long low-loss silica optical-fibre link in conjunction with an InGaAs light emitting diode at 1.68 μm. The detection sensitivity for propane gas in air, which was achieved to lower than 2 torr, i.e. nearly 12% of the lower explosion limit for propane, demonstrates the practical feasibility and reliability of this kind of fibre-optic remote gas sensor system with electrical and thermal safety.     

二级级联式室内可见光通信光学接收天线设计

针对室内可见光通信系统的传统光学接收天线无法同时满足高增益和大视场的问题, 设计了一种二级级联式光学天线. 通过分析信噪比、通信速率与接收天线视场角的关系, 发现视场角为40°–60°的光学天线最适用于室内可见光通信系统. 通过光学仿真软件TracePro的模拟及计算, 给出了所设计的二级级联式光学天线的增益随信号光入射角的变化关系. 结果表明, 相较于传统接收天线, 二级级联式光学天线具有更好的光学性能, 视场角为菲涅耳透镜单独接收时的4 倍. 利用Matlab对二级级联式光学天线竖直向上时的接收功率分布进行仿真, 结果显示探测器接收到的信号功率提升效果明显, 平均值较直接探测时增大了7 dBm, 进一步证实该二级级联式光学天线适用于室内可见光通信系统.     

ZnO nanorods–polymer hybrid white light emitting diode grown on a disposable paper substrate

We demonstrate intrinsic white light emission from hybrid light emitting diodes fabricated using an inorganic–organic hybrid junction grown at 50 °C on a paper substrate. Cyclotene was first spin coated on the entire substrate to act as a surface barrier layer for water and other nutrient solutions. The active area of the fabricated light emitting diode (LED) consists of zinc oxide nanorods (ZnO NRs) and a poly(9,9‐dioctylfluorene) (PFO) conducting polymer layer. The fabricated LED shows clear rectifying behavior and a broad band electroluminescence (EL) peak covering the whole visible spectrum range from 420 nm to 780 nm. The color rendering index (CRI) was calculated to be 94 and the correlated color temperature (CCT) of the LED was 3660 K. The low process temperature and procedure in this work enables the use of paper substrate for the fabrication of low cost ZnO–polymer white LEDs for applications requiring flexible/disposable electronic devices. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

一种二元光学元件阵列微芯模的工艺设计研究

提出一种二元光学元件微型芯模的工艺设计方法,该方法利用了数字调制器件（DMD芯片）的空间光调制特性。首先通过编程设计出二元光学器件的相关软件,以实现菲涅耳透镜、达曼光栅、龙基光栅等各种矢量图形,经过14倍精缩光学系统,将由DMD芯片生成的二元光学器件图像成像在涂有光刻胶的基板上。经显影、定影和坚膜后,再利用电化学蚀刻,得到一种二元光学阵列的微芯模。这种二元光学的芯模制作方法可以方便、高效、低成本地用于制作微光学器件。