Voltage-controlled linewidth of excitonic transitions in a single self-assembled quantum dot

We report electron and hole tunnelling phenomena in a single self-assembled quantum dot as a function of the applied electric field. We use absorption spectroscopy which allows us to measure excitonic transitions under conditions where optical recombination cannot be observed due to the high, ionizing, electric field.     

Investigation on characteristics of W-type fiber with an inner cladding made of negative refractive index materials

A doubly clad optical fiber with an inner cladding made of negative refractive index material was proposed and the modes distribution, dispersion and time delay were investigated by fully vectorial numerical method. The results indicate that HE₁₂ mode can be operated as a single mode, the cut-off frequency of modes shifts to low normalized frequency with increasing thickness of inner cladding made of negative index materials, large negative dispersion and time delay can be obtained and tailored by the inner cladding. These results provide theoretical basis for designing novel fibers or optical devices.     

Polaron effects on the refractive index changes in cylindrical quantum dots with parabolic potential

The effect of electron-LO-phonon interaction on refractive index changes (RICs) for cylindrical quantum dots (CQDs) with an applied electric field is theoretically investigated. Analytic forms of the linear and third-order nonlinear the RICs are obtained for a cylindrical QD by using compact-density-matrix approach and iterative method, and the numerical results are presented for a GaAs cylinder quantum dot. The results show that the RICs coefficient is greatly enhanced and the peak shift to the aspect of high energy when considering the influence of electron-LO-phonon interaction.     

耦合锗量子点中空穴态对称特性研究

分别采用单带重空穴近似和六带Kronig-Penney模型, 对垂直耦合锗量子点在不同耦合距离下的空穴态特性进行了计算, 并探讨了自旋-轨道的相互作用对空穴态对称性的影响. 计算结果表明: 多带耦合的框架下, 随着量子点垂直间距的增大, 空穴基态从成键态转变为反键态, 而且价带基态能级和第一激发态能级发生反交叉现象, 这与单带模型下得到的相应结果存在较大差异. 通过分析六带模型计算得到的成、反键态波函数, 轻、重空穴态和自旋-轨道分裂态对特征空穴态波函数的贡献比例随着量子点垂直间距的增大发生了转变, 并最终导致量子点空穴基态波函数由成键态转变为反键态. 关键词： 耦合量子点 空穴态 成健态-反健态 自旋-轨道     

Negative Coulomb drag in coupled wire and quantum dot system

We measure the Coulomb drag between parallel split-gate quantum wires with a quantum dot embedded in one of the two wires (drive wire). We observe negative Coulomb drag when a Coulomb oscillation peak appears in the drive wire and the conductance of the other wire (drag wire) is slightly below the first plateau. This indicates that correlation holes are dragged in the drag wire by single electron tunneling through the quantum dot in the drive wire. The drag is only promoted in the drag wire near the barrier regions of the dot, and low compressibility of the drag wire is necessary for the negative drag to occur.     

Intersubband optical refractive index changes in an asymmetric quantum dot underlying an external static magnetic field

We theoretically investigate the refractive index (RI) changes in an asymmetric quantum dot (QD) underlying an external static magnetic field. We obtain the confined wave functions and energies of an electron in QD by the effective-mass approximation. Using the compact-density-matrix approach and iterative method, we obtain the analytical expressions of linear, nonlinear and total RI changes. The results of numerical calculations for the typical GaAs/AlGaAs QD show that the RI changes are sensitive to the parameters of the asymmetric potential and incident optical intensity. Moreover, the resonance peaks of the RI changes shift with the value of magnetic field B or the radius of the QD changing.     

Creating W-type entangled states in quantum dot systems

We show that three initially nonresonant quantum dots (QDs) could be used to generate W-type entangled states with the application of a single detuned light via the ac Stark effect. This gives a way to prepare the highly entangled excitonic states in the picosecond time scale by controlling the interactions between QDs.     

Strain-induced quantum dot superlattice

Coupled double quantum dots and quantum dot superlattices are formed by utilizing the strain of an InP island on top of a near-surface multi-quantum-well structure. The number and composition of the quantum wells together with the thickness of the barrier separating the quantum wells are varied to investigate the coupling of the wave functions of the carriers confined in separate vertically stacked dots. Photoluminescence studies show that the reduction of the barrier thickness and the increase of the number of wells enhance the coupling, which is observed as red shift and narrowing of the quantum dot peak. The calculated shifts of the peak positions agree closely with the experimental values.     

Insulating state in open quantum dots and quantum dot arrays

We describe the observation of novel localization in mesoscopic quantum dots and quantum dot arrays, which are realized in high mobility GaAs/AlGaAs heterojunctions using the split‐gate technique. With a sufficient gate voltage applied to form the devices, their resistance diverges as the temperature is lowered below a degree Kelvin, behavior which we attribute to localization. Evidence for the localization is found over the entire range of gate voltage for which the dots are defined, persisting to conductances higher than 50e²/h.     

Laser radiation effects on optical absorptions and refractive index in a quantum dot

An investigation of the laser radiation effects of a hydrogenic impurity in a quantum dot has been performed by using the matrix diagonalization method. We find that the laser field amplitude has an important influence on the linear, third-order nonlinear, and total absorption coefficients as well as the refractive index changes.     

负折射材料的非寻常折射

负折射材料是近年来研究人员关注的新型材料,与常规材料相比,它有许多非寻常的表现,特别是光的折射,用惠更斯原理解释了负折射材料的折射规律,并分析了负折射材料制作的一些常用光学元件与传统材料制作的相应光学元件的不同作用。     

Modified five-layer asymmetric coupled quantum well (M-FACQW) for giant negative refractive index change

We have analyzed the electrorefractive properties of a GaAs/AlGaAs modified five-layer asymmetric coupled quantum well (M-FACQW). The theoretical analyses show that the M-FACQW is expected to exhibit a giant negative electrorefractive index change Δn in the transparent-wavelength region away from the absorption edge. The influence of fluctuations in layer thickness on the electrorefractive properties of the M-FACQW was also investigated. Although the fluctuation in layer thickness deteriorates the characteristics of Δn in the M-FACQW, the M-FACQW still maintains a very giant Δn compared with that of a conventional rectangular quantum well without thickness fluctuation. In addition, we have fabricated the M-FACQW with monolayer accuracy by solid-source molecular beam epitaxy, and measured its photoabsorption current. The experimental results are in good agreement with the calculated properties. This indicates that the M-FACQW has great potential for use in ultra-wideband and low-voltage optical modulators and switches.     

Magnetoplasmon excitations in quantum dot arrays

Motivated by the far-infrared transmission experiments of Demel et al., we have investigated the magnetoplasmon excitations in an array of quantum dots within the Thomas–Fermi–Dirac–von Weizsäcker (TFDW) approximation. Detailed calculations of the magnetic dispersion and power absorption from a uniform radiation field unambiguously demonstrates that the noncircular symmetry of the individual dots is responsible for the anticrossing behaviour observed in the experiments. The interdot Coulomb interaction is unimportant at the interdot separation of the samples studied.     

Quantum entanglement transition in vertically coupled two single-electron quantum dots with charged impurity

Effects of a charged impurity on the ground state of two vertically coupled identical single-electron quantum dots with and without applied magnetic field are investigated. In the absence of the magnetic field, the investigations of the charged impurity effect on the quantum entanglement (QE) in some low-lying states are carried out. It is found that, both the positive charged impurity (PCI) and the negative charged impurity (NCI)reduce the QE in the low-lying states under consideration except that the QE in the ground state is enhanced by the NCI. Additionally, in the domain of B from 0 Tesla to 15 Tesla, the ground state energy E, the ground state angular momentum L and the ground state QE entropy S are worked out. As far as the ground state are concerned, the PCI (NCI) blocks (induces) the angular momentum phase transition and the QE phase transition besides the known fact (i. e., the PCI/NCI decreases/increases the energy) in the magnetic field.     

Dispersive characteristics of surface plasmon polaritons on negative refractive index gratings

The dispersive characteristics of surface plasmon polaritons (SPPs) supported by a periodically corrugated boundary between vacuum and a negative refractive index, isotropic material were studied theoretically by numerical solution of a dispersion equation. SPP dispersion curves were correlated with the optical response of the corrugated boundary in frequency regions where SPPs can be excited by a normally incident plane wave. Abrupt reflectivity variations, characterized by the presence of a near unity maximum and an almost zero minimum, were found in regions where the boundary without corrugation exhibits low reflectivity and rather featureless reflectivity curves.     

Cavity linewidth narrowing by voltage-controlled induced transparency in asymmetry quantum dot molecules

We theoretically investigate cavity-linewidth narrowing by means of voltage-controlled induced transparency in asymmetric double quantum dot system. The impact of voltage on frequency pulling and cavity linewidth narrowing is discussed. The linewidth and position of the cavity transmission can be engineered by the bias voltage. The scheme may be useful in designing novel optoelectronic devices.     

Single-photon detection mechanism in a quantum dot transistor

We study the transport mechanisms in a quantum dot MODFET by tuning the localization induced by charge stored on the quantum dots with light. The temperature dependence of the resistivity of a macroscopic sample reveals a hopping transport when the dots contain an excess of electrons. The resistance of a mesoscopic sample however, which is capable of detecting single photons, exhibits a much weaker dependence upon temperature. This points towards source-drain tunnelling as a transport mechanism and is confirmed by a statistical analysis of the single-photon-induced conductance steps. The complexity of the conducting paths increases as the average hopping length reduces.     

Retardation effects in quantum dot systems coupled via one-dimensional waveguides

We investigate the retardation effect on the radiative decay and entanglement of two quantum dots. The retardation effect is found to be very weak if the dots are coupled to free-space vacuum reservoir. To enhance the effect, we propose to embed the dots inside a one-dimensional waveguide. It is found that populations and entanglement can saturate to non-vanishing values with appropriate conditions. Furthermore, entanglement sudden-rise and sudden-fall are also observed due to this non-Markovian retardation.     

Mid-infrared optical resonances in quantum dot photodetectors coupled with metallic gratings with different aperture diameters

The paper is devoted to optical testing of mid-infrared Ge/Si photodetectors obtained by stacking of self-assembled Ge quantum dots in multilayer structures, which are near-field coupled to the adjacent nanoplasmonic arrays of subwavelength holes in metallic films. It is shown that photocurrent and near-field spectra consist of several sets of peaks, which are attributted to surface plasmon waves, localized surface plasmon modes or diffractive Rayleigh anomaly depending on the hole diameter and the angle of incidence θ. We find that for small holes the greatest contribution to the photocurrent enhancement is due to the excitation of the surface plasmon-polariton waves for all θ. As the hole diameter is increased and becomes comparable with the array periodicity, the normal-incident photoresponse improvement is provided by the Rayleigh anomaly. With the increase of incident angle, the photocurrent enhancement is supposed to arise from coupling of the localized shape resonance and propagating plasmon modes.