Characterization of TiO2/Au/TiO2 films deposited by magnetron sputtering on polycarbonate substrates

Transparent and conducting TiO₂/Au/TiO₂ (TAuT) films were deposited by reactive magnetron sputtering on polycarbonate substrates to investigate the effect of the Au interlayer on the optical, electrical, and structural properties of the films. In TAuT films, the Au interlayer thickness was kept at 5 nm. Although total thickness was maintained at 100 nm, the stack structure was varied as 50/5/45, 70/5/25, and 90/5/5 nm.In XRD pattern, the intermediate Au films were crystallized, while all TAuT films did not show any diffraction peaks for TiO₂ films with regardless of stack structure. The optical and electrical properties were dependent on the stack structure of the films. The lowest sheet resistance of 23 Ω/□ and highest optical transmittance of 76% at 550 nm were obtained from TiO₂ 90 nm/Au 5 nm/TiO₂ 5 nm films. The work function was dependent on the film stack. The highest work function (4.8 eV) was observed with the TiO₂ 90 nm/Au 5 nm/TiO₂ 5 nm film stack. The TAuT film stack of TiO₂ 90 nm/Au 5 nm/TiO₂ 5 nm films is an optimized stack that may be an alternative candidate for transparent electrodes in flat panel displays.     

Optical and gas sensing properties of thick TiO2 films grown by laser deposition

In this work the optical and the gas sensing properties of thick TiO₂ waveguide films, produced by pulsed laser deposition, were investigated by m-line spectroscopy. The films were deposited on (0 0 1) SiO₂ substrates at temperature of 100 °C. The thickness of the films was measured to be in the range from 650 to 1900 nm and the roughness increases from 5 to 14.6 nm. High quality mode spectra, consisted of thin and bright TE and TM modes, were observed in the films with thickness up to 1200 nm. All the films revealed anisotropic optical properties. Gas sensitivity of the films to CO₂ was examined at room temperature on the basis of the variations of the refractive index. CO₂ concentration of 3 × 10⁴ ppm was detected, which corresponds to a refractive index variation of about 1 × 10⁻⁴. The crystal structure and the optical transmittance of the films were also presented and discussed.     

Preparation of transparent conductive TiO2:Nb thin films by pulsed laser deposition

This study investigated the optical and electrical properties of Nb-doped TiO₂ thin films prepared by pulsed laser deposition (PLD). The PLD conditions were optimized to fabricate Nb-doped TiO₂ thin films with an improved electrical conductivity and crystalline structure. XRD analyses revealed that the deposition at room temperature in 0.92 Pa O₂ was suitable to produce anatase-type TiO₂. A Nb-doped TiO₂ thin film attained a resistivity as low as 6.7 × 10⁻⁴ Ω cm after annealing at 350 °C in vacuum (<10⁻⁵ Pa), thereby maintaining the transmittance as high as 60% in the UV-vis region.     

The enhanced conductivity and stability of AZO thin films with a TiO2 buffer layer

Aluminum doped zinc oxide (AZO) films were substitutes of the SnO₂:F films on soda lime glass substrate in the amorphous thin-film solar cells due to good properties and low cost. In order to improve properties of AZO films, the TiO₂ buffer layer had been introduced. AZO films with and without TiO₂ buffer layer were deposited on soda lime glass substrates by r.f. magnetron sputtering. Subsequently, one group samples were annealed in vacuum (0.1 Pa) at 500 °C for 120 s using the RTA system, and the influence of TiO₂ thickness on the properties of AZO films had been discussed. The XRD measurement results showed that all the films had a preferentially oriented (0 0 2) peak, and the intensity of (0 0 2) peak had been enhanced for the AZO films with TiO₂ buffer layer. The resistivity of TiO₂ (3.0 nm)/AZO double-layer film is 4.76×10⁻⁴ Ω cm with the maximum figure merit of 1.92×10⁻² Ω⁻¹, and the resistivity has a remarkable 28.7% decrease comparing with that of the single AZO film. The carrier scattering mechanism of TiO₂ (3.0 nm)/AZO double-layer film had been described by Hall measurement in different temperatures. The average transmittance of all the films exceeded 92% in the visible spectrum. Another group samples were heat treated in the quartz tube in air atmosphere, and the effect of TiO₂ thickness on thermal stability of AZO films had been discussed.     

Fabrication of textured SnO2:F thin films by spray pyrolysis

Transparent conductive SnO₂:F thin films with textured surfaces were fabricated on soda-lime-silica glass substrates by spray pyrolysis. Structure, morphology, optical and electrical properties of the films were investigated. Results show that the film structure, morphology, haze, transmittance and sheet resistance are dependent on the substrate temperature and film thickness. An optimal 810 nm-thick SnO₂:F film with textured surface deposited at 520 °C exhibits polycrystalline rutile tetragonal structure with a (2 0 0) orientation. The sheet resistance, average transmittance in visible region, and haze of this film were 8 Ω/□, 80.04% and 11.07%, respectively, which are suitable for the electrode used in the hydrogenated amorphous silicon solar cells.     

Sputter deposition of high transparent TiO2−xNx/TiO2/ZnO layers on glass for development of photocatalytic self-cleaning application

In this study, TiO_2−xN_x/TiO₂ double layers thin film was deposited on ZnO (80 nm thickness)/soda-lime glass substrate by a dc reactive magnetron sputtering. The TiO₂ film was deposited under different total gas pressures of 1 Pa, 2 Pa, and 4 Pa with constant oxygen flow rate of 0.8 sccm. Then, the deposition was continued with various nitrogen flow rates of 0.4, 0.8, and 1.2 sccm in constant total gas pressure of 4 Pa. Post annealing was performed on as-deposited films at various annealing temperatures of 400, 500, and 600 °C in air atmosphere to achieve films crystallinity. The structure and morphology of deposited films were evaluated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and atomic force microscopy (AFM). The chemical composition of top layer doped by nitrogen was evaluated by X-ray photoelectron spectroscopy (XPS). Photocatalytic activity of samples was measured by degradation of Methylene Blue (MB) dye. The optical transmittance of the multilayer film was also measured using ultraviolet-visible light (UV-vis) spectrophotometer. The results showed that by nitrogen doping of a fraction (∼1/5) of TiO₂ film thickness, the optical transmittance of TiO_2−xN_x/TiO₂ film was compared with TiO₂ thin film. Deposited films showed also good photocatalytic and hydrophilicity activity at visible light.     

Correlation between microstructure and optical properties of nano-crystalline TiO2 thin films prepared by sol-gel dip coating

Titanium dioxide thin films have been prepared from tetrabutyl-orthotitanate solution and methanol as a solvent by sol-gel dip coating technique. TiO₂ thin films prepared using a sol-gel process have been analyzed for different annealing temperatures. Structural properties in terms of crystal structure were investigated by Raman spectroscopy. The surface morphology and composition of the films were investigated by atomic force microscopy (AFM). The optical transmittance and reflectance spectra of TiO₂ thin films deposited on silicon substrate were also determined. Spectroscopic ellipsometry study was used to determine the annealing temperature effect on the optical properties and the optical gap of the TiO₂ thin films. The results show that the TiO₂ thin films crystallize in anatase phase between 400 and 800 °C, and into the anatase-rutile phase at 1000 °C, and further into the rutile phase at 1200 °C. We have found that the films consist of titanium dioxide nano-crystals. The AFM surface morphology results indicate that the particle size increases from 5 to 41 nm by increasing the annealing temperature. The TiO₂ thin films have high transparency in the visible range. For annealing temperatures between 1000 and 1400 °C, the transmittance of the films was reduced significantly in the wavelength range of 300-800 nm due to the change of crystallite phase and composition in the films. We have demonstrated as well the decrease of the optical band gap with the increase of the annealing temperature.     

Structural, electrical and optical properties of TiO2 doped WO3 thin films

TiO₂ doped WO₃ thin films were deposited onto glass substrates and fluorine doped tin oxide (FTO) coated conducting glass substrates, maintained at 500 °C by pyrolytic decomposition of adequate precursor solution. Equimolar ammonium tungstate ((NH₄)₂WO₄) and titanyl acetyl acetonate (TiAcAc) solutions were mixed together at pH 9 in volume proportions and used as a precursor solution for the deposition of TiO₂ doped WO₃ thin films. Doping concentrations were varied between 4 and 38%. The effect of TiO₂ doping concentration on structural, electrical and optical properties of TiO₂ doped WO₃ thin films were studied. Values of room temperature electrical resistivity, thermoelectric power and band gap energy (E_g) were estimated. The films with 38% TiO₂ doping in WO₃ exhibited lowest resistivity, n-type electrical conductivity and improved electrochromic performance among all the samples. The values of thermoelectric power (TEP) were in the range of 23-56 μV/K and the direct band gap energy varied between 2.72 and 2.86 eV.     

Structural study of sol-gel Au/TiO2 films from nanopowders

TiO₂ represents one of the most important sol-gel materials, due to its photocatalytic properties, in the case of both powders and coatings. Nanostructured titania has been reported to be used in many applications in different fields ranging from optics to gas sensor via solar energy. Recent researches point out the existence of new procedures used in order to enhance the efficiency of the photocatalytic process. The metal ion doping is such an example. Two types of 2 wt.% Au containing TiO₂ powders have been embedded in sol-gel vitreous TiO₂ matrices. Au-doped TiO₂ films have been prepared from these sols, by dipping procedure using quartz microscopic slides, as substrates. The relationship between the synthesis conditions and the properties of titania nanosized materials, such as thermal stability, phase composition, crystallinity, and the influence of dopant was investigated. The hydrophilic properties of the films were correlated with their structure, composition and surface morphology.     

Au/TiO2/Ru(0 0 0 1) model catalysts and their interaction with CO

Au/TiO₂/Ru(0 0 0 1) model catalysts and their interaction with CO were investigated by scanning tunneling microscopy and different surface spectroscopies. Thin titanium oxide films were prepared by Ti deposition on Ru(0 0 0 1) in an O₂ atmosphere and subsequent annealing in O₂. By optimizing the conditions for deposition and post-treatment, smooth films were obtained either as fully oxidized TiO₂ or as partly reduced TiO_x, depending on the preparation conditions. CO adsorbed molecularly on both oxidized and reduced TiO₂, with slightly stronger bonding on the reduced films. Model catalyst surfaces were prepared by depositing submonolayer quantities of Au on the films and characterized by X-ray photoelectron spectroscopy and scanning tunneling microscopy. From X-ray photoelectron spectroscopy, a weak interaction between the Au and the TiO₂ substrate was found. At 100 K CO adsorption occurred on both the TiO₂ film and on the Au nanoparticles. CO desorbed from the Au particles with activation energies between 53 and 65 kJ/mol, depending on the Au coverage. If the Au deposit was annealed to 770 K prior to CO exposure, the CO adsorption energy decreased significantly. STM measurements revealed that the Au particles grow upon annealing, but are not encapsulated by TiO_x suboxides. The higher CO adsorption energy observed for smaller Au coverages and before annealing is attributed to a significantly stronger interaction of CO with mono- and bilayer Au islands, while for higher particles, the adsorption energy becomes more bulk-like. The implications of these effects on the known particle size effects in CO oxidation over supported Au/TiO₂ catalysts are discussed.     

Microstructural, optical and photocatalytic properties of CdS doped TiO2 thin films

CdS doped TiO₂ thin films (with CdS content=0, 3, 6, 9 and 12 at%) were grown on glass substrates. The X-ray diffraction analysis revealed that the films are polycrystalline of monoclinic TiO₂ structure. The microstructure parameters of the films such as crystallite size (D_ν) and microstrain (e) are calculated. Both the crystallites size and the microstrain are decreased with increasing CdS content. The optical constants have been determined in terms of Murmann's exact equations. The refractive index and extinction coefficient are increased with increasing CdS content. The optical band gap is calculated in the strong absorption region. The possible optical transition in these films is found to be an allowed direct transition. The values of E_g^opt are found to decrease as the CdS content increased. The films with 3 at% CdS content have better decomposition efficiency than undoped TiO₂. The films with 6 at% and 9 at% CdS content have decomposition efficiency comparable to that of undoped TiO₂, although they have lower band gap. The CdS doped TiO₂ could have a better impact on the decomposing of organic wastes.     

Fabrication and characterization of Ag intermediate transparent and conducting TiON/Ag/TiON multilayer films

Silver (Ag) intermediate transparent and conducting TiON/Ag/TiON (TAgT) films were deposited by RF and DC magnetron sputtering on glass substrates. Changes in the optoelectrical properties of the films were investigated as a function of Ag thickness. The thickness of the Ag film varied from 5 to 20 nm.In XRD patterns, the TAgT films showed characteristic diffraction peaks for Ag (111), (200), (220), and (311) planes, while peaks for TiON were not observed. Thus, it was concluded that the Ag interlayer did not affect the crystalline structures of the upper TiON films. However, electrical resistivity was dependent on the thickness of the Ag interlayer. For TiON 50/Ag 20/TiON 30 nm films, electrical resistivity decreased to as low as 3.3 × 10^− 4 Ωcm. The optical transmittance was also influenced by the Ag interlayer. As the Ag thickness increased, the optical transmittance decreased to as low as 45% for TiON 50/Ag 20/TiON 30 nm films. From observed figure of merit and work function, it is concluded that a TAgT film with a 5 nm-thick Ag interlayer is a good candidate for use as a transparent electrode in OLEDs and flat panel displays.     

Uniform thin films of TiO2 nanoparticles deposited by matrix-assisted pulsed laser evaporation

We report morphological and optical properties of a colloidal TiO₂ nanoparticle film, deposited on a quartz substrate by using the Matrix-Assisted Pulsed Laser Evaporation (MAPLE) technique. Atomic Force Microscopy demonstrated that a good uniformity of the deposition can be obtained. The presence of agglomerates with dimensions of about 1 μm in size was noticed. Form UV-vis transmission spectra, recorded in the 200-800 nm range, the optical constants and the energy gap were determined besides the film thickness. The optical constants resulted in agreement with the values reported in literature for TiO₂ nanoparticle thin films.     

Structural, optical and electrochemical properties of TiO2 thin films grown by APCVD method

Atmospheric pressure chemical vapor deposition (APCVD) of TiO₂ thin films has been achieved onto glass and onto ITO-coated glass substrates, from the reaction of TiCl₄ with ethyl acetate (EtOAc). The effect of the synthesis temperature on the optical, structural and electrochemical properties was studied through spectral transmittance, X-ray diffraction (XRD) and electrochemical impedance spectroscopy (EIS) measurements. It was established that the TiO₂ films deposited onto glass substrate, at temperatures greater than 400 °C grown with rutile type tetragonal structure, whereas the TiO₂ films deposited onto ITO-coated glass substrate grown with anatase type structure. EIS was applied as suitable method to determine the charge transfer resistance in the electrolyte/TiO₂ interface, typically found in dye-sensitized solar cells.     

Influence of growth temperature of TiO2 buffer on structure and PL properties of ZnO films

A series of ZnO films with TiO₂ buffer on Si (1 0 0) substrates were prepared by DC reactive sputtering. Growth temperature of TiO₂ buffer changed from 100 °C to 400 °C, and the influence on the crystal structures and optical properties of ZnO films have been investigated. The XRD results show that the ZnO films with TiO₂ buffer have a hexagonal wurtzite structure with random orientation, and with the increase of growth temperature of TiO₂ buffer, the residual stresses were released gradually. Specially, the UV emission enhanced distinctly and FWHMs (full width half maximum) decreased linearly with the increasing TiO₂ growth temperature. The results all come from the improvement of crystal quality of ZnO films.     

Effects of depositing temperatures on structure and optical properties of TiO2 film deposited by ion beam assisted electron beam evaporation

TiO₂, which is high in refractive index and dielectric constant, plays an important role in the fields of optics and electronics. In this work, TiO₂ films were prepared on glass substrates by the technique of ion beam assisted electron beam evaporation. The films were deposited at 50, 150 and 300 °C, respectively. Then the as-deposited TiO₂ films were annealed at 450 °C for 1 h in vacuum atmosphere. Structures and optical properties of TiO₂ films were characterized by XRD, SEM, ellipsometry and spectrophotometer. As a result, the structure and the refractive index of films were improved by both the annealing and the increasing of the deposition temperature. The UV-vis transmittance spectra also confirmed that the deposition temperature has a significant effect on the transparency of the thin films. The highest transparency over the visible wavelength region of spectra was obtained at the deposition temperature of 300 °C. The allowed direct band gap at the deposition temperature ranging from 50 to 300 °C was estimated to be in the range from 3.81 to 3.92 eV.     

Visible photocurrent response of TiO2 anode

The photoelectrochemical response to the electromagnetic radiation over the visible range is particularly sought for from the point of view of the efficiency of hydrogen generation by water photolysis in a photoelectrochemical solar cell, PEC. The PEC used in this work comprises thin film TiO₂ - based photoanode, Pt foil covered with Pt black as a cathode and SCE as a reference electrode, immersed in an electrolyte solution. Titanium dioxide thin films are deposited by means of rf reactive sputtering and modified, when necessary, by Au or Ag ultra-thin overcoatings. Here we show that even unmodified TiO₂ photoanode, shows a photocurrent peak over the visible range of the light spectrum (λ = 500-650 nm). The effect of the surface modification by noble metals and properties of the aqueous electrolyte on the visible photocurrent are studied. The optical spectra indicate an increased absorption due to noble metal deposits at 410 nm for Ag and at 600 nm for Au. In contrast, the photocurrent peak over the visible range (500 nm < λ < 650 nm) changes its symmetry and decreases in intensity with the increasing thickness of noble metals layers. The visible photoresponse is explained in terms of OH formation at the interface between TiO₂ electrode and aqueous electrolyte.     

Study on the properties and charge generation in dye-sensitized n-TiO2|dye|p-CuI solid state photovoltaic solar cells

Transparent semiconducting copper iodide (CuI) films were prepared by XeCl Excimer laser and their characteristics are investigated. These films exhibited optical transmittance over 80% in the wavelength range from 400 to 900 nm and minimum resistivity of about 2 kΩ cm⁻¹. The optical absorption of the these films shows a remarkable blue shift compared to that of polycrystalline of CuI, which can be explained from the viewpoint formation of ultra fine of CuI grains. The titanium dioxide (TiO₂) films have been prepared by sol-gel method. The properties of pulsed laser deposited CuI and TiO₂ films in power output of n-TiO₂|dye|p-CuI cells is studied. An efficient charge generation is observed through the illumination of TiO₂ layer of the fabricated n-TiO₂|dye|p-CuI solid state photovoltaic solar cells. From the current-voltage characteristics, the fill factor and power conversion efficiency were about of 45 and 3%, respectively. The maximum photo-current of about 12.5 mA/cm² and photo-voltage of 475 mV under AM 1.5 conditions were obtained for the n-TiO₂|dye|p-CuI solid states photovoltaic solar cells with good reproducibility. Adsorbed dye molecules to the TiO₂ surface act as a relay, especially under illumination through TiO₂ layer in the wave range region of 300-400 nm.     

Methylene blue photoelectrodegradation under UV irradiation on Au/Pd-modified TiO2 films

In this work TiO₂ thin films were modified with gold/palladium (Au/Pd) bimetallic paticles by sputtering method. TiO₂ films were deposited on ITO (SnO₂:In) by Doctor Blade method and post-anneling. The properties of the films were studied through measurements of XRD (X-ray diffraction) and AFM (atomic force microscopy). The degradation of methylene blue was studied by UV-irradiated pure TiO₂ and Au/Pd-modified TiO₂ in aqueous solution. Langmuir-Hinshelwood model was used to obtain kinetic information. Photocatalytic study indicated that Au/Pd-modified TiO₂ photocatalytic activity was better than TiO₂ pure; the best half-life time for Au/Pd-modified TiO₂ in photodegradation was 2.8 times smaller than TiO₂ pure; finally the efficiency in methylene blue photodegradation was improved from 23% to 43% when Au/Pd-modified TiO₂ films were used.     

Electrochemical properties of electrosynthesized TiO2 thin films

Titanium dioxide (TiO₂) thin films prepared by cathodic electrodeposition on indium-tin-oxide coated glass substrates from simple aqueous peroxo-titanium complex solutions have been studied as a function of sintering temperature (25-500 °C). The films crystallized in to anatase phase at relatively low temperature (300 °C). Electrochemical properties of amorphous and anatase films were investigated by cyclic voltammogram (CV) in lithium ion containing organic electrolyte. All the films were found to show reversible electrochemical properties upon Li⁺ ion intercalation. The effects of sintering temperature on the crystallinity and consequently on the electrochemical properties of TiO₂ has been discussed.