High fluence deposition of polyethylene glycol films at 1064 nm by matrix assisted pulsed laser evaporation (MAPLE)

Matrix assisted pulsed laser evaporation (MAPLE) has been applied for deposition of thin polyethylene glycol (PEG) films with infrared laser light at 1064 nm. We have irradiated frozen targets (of 1 wt.% PEG dissolved in water) and measured the deposition rate in situ with a quartz crystal microbalance. The laser fluence needed to produce PEG films turned out to be unexpectedly high with a threshold of 9 J/cm², and the deposition rate was much lower than that with laser light at 355 nm. Results from matrix assisted laser desorption/ionization time-of-flight mass spectrometry (MALDI-TOF-MS) analysis demonstrate that the chemistry, molecular weight and polydispersity of the PEG films were identical to the starting material. Studies of the film surface with scanning electron microscopy (SEM) indicate that the Si-substrate is covered by a relatively homogenous PEG film with few bare spots.     

Generation of 532 nm laser radiation and phase matching properties of organic nonlinear optical material

Organic nonlinear optical single crystal of l-asparagine-l-tartaric acid (LAsT) was grown by slow evaporation technique at room temperature. The grown crystal was confirmed by single crystal X-ray diffraction and FT-IR studies. The direct band gap energy was found to be 5.4 eV. The SHG efficiency of the sample is 3 times higher than that of KDP crystal. The laser damage threshold of the grown crystal was 5.7 GW/cm². The grown crystal was thermally stable up to 141 °C. Low dielectric constant at higher frequency was found by dielectric measurements. The activation energy was calculated from Arrhenius relation and it was found to be 0.088 eV. Negative photoconducting nature was obtained by photoconductivity measurements.     

Comparison of 885 nm pumping and 808 nm pumping in Nd:CNGG laser operating at 1061 nm and 935 nm

A Nd:CNGG laser operated at 935 nm and 1061 nm pumped at 885 nm and 808 nm, respectively, is demonstrated. The 885 nm direct pumping scheme shows some advantages over the 808 nm traditional pumping scheme. It includes higher slope efficiency, lower threshold, and better beam quality at high output power. With the direct pumping, the slope efficiency increases by 43% and the threshold decreases by 10% compared with traditional pumping in the Nd:CNGG laser operated at 935 nm. When the Nd:CNGG laser operates at 1061 nm, the direct pumping increases the slope efficiency by 14% with a 20% reduction in the oscillation threshold.     

Electrical field enhancement and laser damage growth in high-reflective coatings at 1064 nm

The effect of electric field enhancement on damage growth of flat bottom pit and nodule-ejected pit was studied based on the finite difference time domain method and temperature field theory. The electric field enhancement around the edge of damage pits indeed exists and varies from 1.2 to 2.0 times. It is found that damage growth not only depends on the electric field enhancement but also the local absorptive coefficient by temperature field calculation. The results also meet the reported damage growth behavior very well. A conclusion can be drawn that field enhancement and potential defects or new generated defects during former pulses are jointly responsible for the damage growth. In addition, an inference can be drawn from theoretical analysis that the flat bottom pit has been initiated by absorbing defect located at the H-L interfaces, which the peaks of electrical field happen to.     

Breakdown limits of optical multimode fibers for the application of nanosecond laser pulses at 532 nm and 1064 nm wavelength

For many applications, optical multimode fibers are used for the transmission of powerful laser radiation. High light throughput and damage resistance are desirable. Laser-induced breakdown at the end faces of fibers can limit their performance. Therefore, the determination of laser-induced damage thresholds (LIDT) at the surface of fibers is essential.Nanosecond (1064 nm and 532 nm wavelength) single-shot LIDT were measured according to the relevant standard on SiO₂ glass preforms (Suprasil F300) as basic materials of the corresponding fibers. For 10 kinds of fused silica fibers (FiberTech) with core diameters between 180 μm and 600 μm, an illumination approach utilizing a stepwise increase of the laser fluence on a single spot was used. For both wavelengths, the LIDT values (0% damage probability) obtained by means of the two methods were compared. The influence of surface preparation (polishing) on damage resistance was investigated. For equal surface finishing, a correlation between drawing speed of the fibers and their surface LIDT values was found. In addition to the surface measurements, bulk LIDT were determined for the preform material.     

Modifications of AISI 1045 steel by picosecond Nd:YAG laser at 266 nm; comparison with 532 and 1064 nm pulses

Interaction of Nd:YAG laser, operating at 266 nm wavelength and a pulse duration of 40 ps, with AISI 1045 steel was studied. Surface damage threshold was estimated to be 0.14 J/cm². The steel surface modification was studied at the laser fluence of ∼1.0 J/cm². The energy absorbed from Nd:YAG laser beam is partially converted to thermal energy, which generates a series of effects, such as melting, vaporization of the molten material, shock waves, etc. The following AISI 1045 steel surface morphological changes and processes were observed: (i) intensive damage of the target in the central zone of irradiated area; (ii) appearance of periodic surface structures at nano-level, with periodicity in agreement with the used wavelength; (iii) reduction of oxygen concentration in irradiated area; and (iv) development of plasma in front of the target. Generally, interaction of laser beam with AISI 1045 steel (at 266 nm) results in a near-instantaneous creation of damage, meaning that large steel surfaces can be modified in short times.     

Physical mechanism of silicon ablation with long nanosecond laser pulses at 1064 nm through time-resolved observation

Nanosecond (ns) laser ablation can provide a competitive solution for silicon micromachining in many applications. However, most of the previous studies focus on ns lasers at visible or ultraviolet (UV) wavelengths. The research is very limited for ns lasers at infrared (e.g., 1064 nm) wavelengths (which often have the advantage of much lower cost per unit average output power), and the research is even less if the ns laser also has a long pulse duration on the order of ∼100 ns. In this paper, time-resolved observation using an ICCD (intensified charge-coupled device) camera has been performed to understand the physical mechanism of silicon ablation by 200-ns and 1064-nm laser pulses. This kind of work has been rarely reported in the literature. The research shows that for the studied conditions, material removal in laser silicon ablation is realized through surface vaporization followed by liquid ejection that occurs at a delay time of around 200-300 ns. The propagation speed is on the order of ∼1000 m/s for laser-induced plasma (ionized vapor) front, while it is on the order of ∼100 m/s or smaller for the front of ejected liquid. It has also been found that the liquid ejection is very unlikely due to phase explosion, and its exact underlying physical mechanism requires further investigations.     

Research on the optical field distribution and micro-fabrication model in convex-surface laser lithography

A system of convex-surface laser lithography with diode laser is established in this paper. Based on this system, a mathematical model of optical field distribution and lithography on the photoresist layer of convex-surface substrate with diode laser is presented. According to the lithography system and model, some numerical simulations are carried out. The simulation result shows that lithographic lines on convex-surface lithography are not symmetric about the optical axis of incident laser beam. Axis of lines at different vector radius on convex-surface substrate will offset from the wavefront normal of incident laser beam. The offset distance depends on the slopes of different equivalent slants. The simulative results of lithographic model agree well with the lithographic experimental data.     

Highly efficient Nd:GdVO4/BiBO laser at 456 nm under direct 880 nm diode laser pumping

The continuous-wave high-efficiency laser emission of Nd:GdVO₄ at the second-harmonic of 456 nm obtained by intracavity frequency doubling with an BiB₃O₆(BiBO) nonlinear crystal is investigated under pumping by diode laser at 880 nm into emitting level ⁴F_3/2. About 3.8 W at 456 nm with M² = 1.4 was obtained from a 5 mm-thick 0.4 at.% Nd:GdVO₄ laser medium and a 12 mm-long BiBO nonlinear crystal in a Z-type cavity for 13.9 W absorbed pump power. An optical-to-optical efficiency with respect to the absorbed pump power was 0.274. Comparative results obtained for the pump with diode laser at 808 nm, into the highly-absorbing ⁴F_5/2 level, are given in order to prove the advantages of the 880 nm wavelength pumping.     

Characterization of 60 GHz Multi Quantum well passively mode-locked laser under optical self-injection locking

The quality and pulse compression of the 60 GHz millimeter wave signals generated by 750 μm long InAlGaAs Multi Quantum Well (MQW) passively mode locked laser under free running and optical self-injection locked conditions are experimentally characterized in terms of longitudinal modes under certain bias currents that range from 24 mA to 90 mA. Initially, the MQW laser is characterized in free running condition with no external injection. The measurements reflect that the free spectral range of laser under test is around 61 GHz and exhibit more than 22 lasing modes. The laser is then integrated into low phase noise self-injection locking oscillator by feeding a part of output RF signal back into the laser cavity to enhance passive mode locking. By doing so the microwave line width of our laser is reduced from 900 kHz to 24 kHz with significant increase in output of resultant beat tones which exhibits strong passive mode locking. This is the first time that the free running microwave line width of MQW laser is reduced up to this level. It is evident from our experimental investigation that as we increase the power and phase correlation between different longitudinal modes inside laser cavity through optical self-injection, the strength of the passively mode locked mechanism is significantly increased and the phase noise of radio frequency signal is drastically reduced.     

Surface modifications of crystalline silicon created by high intensity 1064 nm picosecond Nd:YAG laser pulses

A study of silicon modification induced by a high intensity picosecond Nd:YAG laser, emitting at 1064 nm, is presented. It is shown that laser intensities in the range of 5 × 10¹⁰-0.7 × 10¹² W cm⁻² drastically modified the silicon surface. The main modifications and effects can be considered as the appearance of a crater, hydrodynamic/deposition features, plasma, etc. The highest intensity of ∼0.7 × 10¹² W cm⁻² leads to the burning through a 500 μm thick sample. At these intensities, the surface morphology exhibits the transpiring of the explosive boiling/phase explosion (EB) in the interaction area. The picosecond Nd:YAG laser-silicon interaction was typically accompanied by massive ejection of target material in the surrounding environment. The threshold for the explosive boiling/phase explosion (TEB) was estimated to be in the interval 1.0 × 10¹⁰ W cm⁻² < TEB ≤ 3.8 × 10¹⁰ W cm⁻².     

Synthesis of 10 nm Ag nanoparticle polymer composite pastes for low temperature production of high conductivity films

The conversion of silver nanoparticle (NP) paste films into highly conductive films at low sintering temperature is an important requirement for the developing areas of additive fabrication and printed electronics. Ag NPs with a diameter of ∼10 nm were prepared via an improved chemical process to produce viscous paste with a high wt%. The paste consisted of as-prepared Ag NP and an organic vehicle of ethylcellulose that was deposited on glass and Si substrates using a contact lithographic technique. The morphology and conductivity of the imprinted paste film were measured as a function of sintering temperature, sintering time and the percentage ratio of Ag NP and ethylcellulose. The morphology and conductivity were examined using scanning electron microscopy (SEM) and a two-point probe electrical conductivity measurement. The results show that the imprinted films were efficiently converted into conducting states when exposed to sintering temperature in the range of 200-240 °C, this temperature is lower than the previously reported values for Ag paste.     

Tm:Ho co-doped single mode optical fibre laser pumped by a 1600 nm Er fibre laser

An all-fibre Tm:Ho laser system is reported, using a 1600 nm Er fibre pump laser and 0.3 m length of the fibre through a two-stage optimization of both the pump source and laser configuration to achieve a low threshold operation. As a result a low threshold power of 33 mW and a slope efficiency of 0.6% have been achieved, in laser operation at a wavelength of 1870 nm and a cross-comparison with 785 nm laser diode pumping has been made.     

A design of simple, portable optical tomography apparatus using 904 nm NIR laser diode

We ourselves constructed a portable optical tomography apparatus using near infrared (NIR) laser diode of 904 nm peak spectrum as a light source operating at power 2 mW. For testing, the samples (phantoms) of a cylinder glass and a triangle foam were used. From the scanning process, we successfully carried out the 2D image reconstruction and later it was improved using a filtering process using the back projection method. The images obtained of the phantom and the background were clearly distinguished. The apparatus has advantages of low cost and simplicity of operation and hence has potential use in many lines, e.g. medicine, agriculture.     

Reflective carbon nanotube as the saturable absorber for mode-locked 1064 nm laser

With a reflective single-walled carbon nanotube as the saturable absorber, a laser diode-pumped passively mode-locked Nd:YVO₄ laser at 1064 nm was realized for the first time. The pulse duration of 12 ps was produced with a repetition rate of 83.7 MHz. The peak power and the single pulse energy of the mode-locking laser were 1.28 kW and 15.4 nJ, respectively.     

On the optical properties of amorphous Ge-Ga-Se-KBr films prepared by pulsed laser deposition

Amorphous thin films (1 − x)(4GeSe₂-Ga₂Se₃)-xKBr (x = 0, 0.1, 0.2, 0.3) were prepared by the pulsed laser deposition (PLD) technique. The optical parameters were calculated using the Swanepoel method from the optical transmission spectra. The optical band gap () of the studied films increased while the index of refraction decreased when increased the content of KBr. The Tauc slopes were discussed as an indicator of the degree of structural randomness of amorphous semiconductors. The index of refraction decreased and increased after annealing of as-deposited films below the glass transition temperature. The thermal-bleaching and thermal- contraction effects were observed, which are discussed in relation to the reduction in the density of homopolar bonds confirmed by the Raman spectra analysis and the decreased amount of fragments of the as-deposited films, respectively.     

36.5 W high beam quality 532 nm green laser based on dual-rod AO Q-switched resonator

A high power, high beam quality, compact green laser based on dual-rod AO Q-switched resonator was designed, fabricated and tested. The laser provided a maximum 532 nm average power of 36.5 W at a repetition rate of 65 kHz with the beam quality factor of M² = 1.55 and the optical frequency conversion efficiency from NIR to green laser was as high as 51%. The pulse repetition rate was tunable from 50 kHz to 200 kHz and the overall dimension of the laser was within 500 × 300 × 150 mm³.     

1097 nm Nd:YVO4 self-Raman laser

An acousto-optically Q-switched self-Raman laser emitting at 1097 nm is demonstrated with a c-cut Nd:YVO₄ crystal, using a fiber-coupled 880 nm diode laser as the pumping source. Raman laser performances in concave-plane and plane-plane oscillating cavities are studied and compared. With an absorbed diode power of 12.4 W and a pulse repetition rate of 50 kHz, the highest output power of 1.45 W is obtained from the plane-plane cavity, corresponding to an optical-to-optical conversion efficiency of 11.7%.     

Surface modifications of a titanium implant by a picosecond Nd:YAG laser operating at 1064 and 532 nm

Interaction of an Nd:YAG laser, operating at 1064 or 532 nm wavelength and pulse duration of 40 ps, with titanium implant was studied. Surface damage thresholds were estimated to 0.9 and 0.6 J/cm² at wavelengths 1064 and 532 nm, respectively. The titanium implant surface modification was studied by the laser beam of energy density of 4.0 and 23.8 J/cm² (at 1064 nm) and 13.6 J/cm² (at 532 nm). The energy absorbed from the Nd:YAG laser beam is partially converted to thermal energy, which generates a series of effects, such as melting, vaporization of the molten material, shock waves, etc. The following titanium/implant surface morphological changes were observed: (i) both laser wavelengths cause damage of the titanium in the central zone of the irradiated area, (ii) appearance of a hydrodynamic feature in the form of resolidified droplets of the material in the surrounding outer zone with the 1064 nm laser wavelength and (iii) appearance of wave-like microstructures with the 532 nm wavelength. Generally, both laser wavelengths and the corresponding laser energy densities can efficiently enhance the titanium/implant roughness. This implant roughness is expected to improve its bio-integration. The process of the laser interaction with titanium implant was accompanied by formation of plasma.     

Repetition rate multiplication in figure-eight fibre laser with 3 dB couplers

The operation of a passively modelocked figure-eight laser with all fibre repetition rate multiplier is reported. Thirty two times the fundamental repetition rate is achieved with six conventional 3 dB couplers at a repetition rate of 182 MHz. The repetition rate 2^N times multiplication only requires (N + 1) passive fibre couplers and N fibre delay-lines. This method makes it possible to achieve high multiplication and is inexpensive when compared with conventional methods employing sub-ring cavity or special fibre Bragg grating to control repetition rate.