Radiation response behaviour of Al codoped germano-silicate SM fiber at high radiation dose

Radiation response behaviour of Ge + Al doped SM fiber fabricated by the solution doping process has been studied at room temperature with respect to 1310 nm transmission wavelength under three different dose rates of 200, 400 and 600 Rad/min to compare with that of standard Er doped as well as Ge doped SM fibers. Their radiation sensitivity has been observed with variation of dose rates, transmission wavelength along with their recovery nature. Radiation response behaviour of Al doped SM fiber is found to be slightly non-linear in nature with very low dose rate dependency. No saturation level was found upto 13 Krad cumulative dose. Thermobleaching as well as photobleaching phenomena have also been studied. Gamma irradiated Al doped preform shows an absorption peak at around 300 nm due to generation of Al (E′) defect center and gets annihilated after thermobleaching process. Gamma irradiated Al doped SM fiber shows prominent photobleaching effect on their optical attenuation with respect to the 850 nm transmission wavelength. From ESR study resonance signals for Al³⁺ related radiation-induced defect centers are not clearly observed in this study. A very weak hyperfine pattern has been observed for gamma irradiated Al doped preform sample. The high radiation sensitivity along with linear response behaviour, low recovery and almost dose rate independence behaviour of the material system of Ge + Al codoped SM core optical fiber under gamma radiation shows their potential for application as fiber optic radiation sensor in comparison to the universal standard erbium doped SM fiber.     

Mechanically formed loss-tunable long-period fiber gratings realized on the periodic arrayed metal wires

A new method to tune the peak loss of mechanically formed long-period fiber gratings (MLPFGs) is proposed. Periodic arrayed metal wires are used to obtain the gratings along a single mode fiber (SMF). Self-maintaining gratings are achieved by the bonding force of an UV-adhesive between two glass plates. The initial index modulation formed at room temperature creates a maximum attenuation of −9 dB and −12 dB for coated and uncoated SMF, respectively. By changing the temperature, the peak loss is tuned due to the large thermal expansion of the UV-adhesive. Thermally tunable characteristics caused by the coating layer of the SMF are also described and compared with the results of the device with an uncoated SMF.     

Novel B/Ge codoped photosensitive fiber and dispersion compensation in an 8×10 Gbit/s DWDM system

We used the Modified Chemical Vapor Deposition (MCVD) method to fabricate a B/Ge codoped fiber with a depressed cladding in which boron and germanium were also doped, the depressed cladding was photosensitive, which can greatly suppress the cladding mode coupling. The transmission spectrum of written grating in this fiber made by the phase mask method verified its larger photosensitivity and great suppression of the cladding mode coupling. We then analyzed the Bragg wavelength tuning theory in the phase mask method in detail which gave us a more exact equation. The ultra-violet (UV) exposure system was modified, and eight cascaded Fiber Bragg Gratings (FBG) centered at different wavelengths were written in this photosensitive fiber successfully using a 248 nm KrF excimer laser and one piece of 1067 nm phase mask. Each channel spacing was 100 GH according to the Densed Wavelength Division Multiplexing (DWDM) standards of the International Telecommunication Union (ITU-T). At the same time, we also wrote in chirp in each grating by tilting the phase mask to realize dispersion compensation. The dispersion in 44 km SMF was successfully compensated by the cascaded chirped gratings in the eight channel WDM system with each channel being 10 Gbit/s.     

Optimization of reversible LPFG for sensing application

We report here for the first time to our knowledge the characterization of mechanically induced long period fiber gratings in novel MSM fiber structure. Reversible grating of same period and length was induced in single mode fiber, multimode fiber and novel multimode-singlemode-multimode (MSM) fiber structure. The spectral response of reversible LPFG in SMF is verified experimentally as well as from simulation results and then compared with the experimental spectral response of reversible LPFG in multimode fiber and MSM fiber structure. Reversible LPFG in novel MSM fiber structure is the most optimized and suitable grating for sensing application. For this grating we have obtained single resonant wavelength over a wide wavelength range and maximum transmission loss peak of around 20 dB.     

Fabrication of 550 nm gratings in fused silica by laser induced backside wet etching technique

A series of 550 nm spacing gratings were fabricated in fused silica by laser induced backside wet etching (LIBWE) method using the fourth harmonic of a Q-switched Nd:YAG laser (wavelength: λ = 266 nm; pulse duration: FWHM = 10 ns). During these experiments we used a traditional two-beam interference method: the spatially filtered laser beam was split into two parts, which were interfered at a certain incident angle (2θ = 28°) on the backside surface of the fused silica plate contacting with the liquid absorber (saturated solution of naphthalene-methyl-methacrylate c = 1.85 mol/dm³). We studied the dependence of the quality and the modulation depth of the prepared gratings on the applied laser fluence and the number of laser pulses. The surface of the etched gratings was characterized by atomic force microscope (AFM). The maximum modulation depth was found to be 180-200 nm. Our results proved that the LIBWE procedure is suitable for production of submicrometer sized structures in transparent materials.     

Numerical analysis of GeO2-concentration effects in arc-induced long-period fiber gratings under external refractive-index changes

We present a numerical analysis of the response of arc-induced long-period fiber gratings (LPFGs) under ambient refractive-index changes using standard fibers with SiO₂ as cladding material and different GeO₂ concentration in the SiO₂-GeO₂ doped core. We obtain that the LPFG-sensitivity is increased using lower GeO₂ concentrations and it follows a parabolic behavior. Also, we identify two linear regimes using an external index of 1.37: for GeO₂ concentrations between 2 and 3.5 mol %, the LPFG-sensitivity changes with a rate of 3.614 nm per mole fraction of GeO₂, while for higher concentrations the sensitivity changes with a rate of 1.39 nm/mol %. Additionally, for fibers with 2 mol% of GeO₂, the sensitivity calculated is comparable to this obtained in previous works using corrugated and tapered LPFGs in SMF28 fibers. These results are of interest for the design of improved LPFG-sensors.     

An optical fiber glass containing PbSe quantum dots

An optical fiber material, sodium-aluminum-borosilicate glass doped with PbSe quantum dots (QDs) is synthesized by a high-temperature melting method. Crystallization, size distribution and absorption-photoluminescence (PL) of this material are observed by XRD, TEM, and spectrometer respectively. The obtained results indicate that the glass contains QDs in diameter of 6-13 nm depending on the heat-treatment temperature and with a higher doped concentration than those available. It shows an enhanced PL, widened FWHM (275-808 nm), obvious Stokes shift (20-110 nm), with the PL peak wavelength located within 1676-2757 nm depending on the size of QD. The glass is fabricated into an optical fiber in diameter of 10-70 μm and length of 1 m, with pliability and ductility similar to usual SiO₂ fibers. It can be easily fused and spliced with SiO₂ fibers due to a small difference of melting point between them. Characterized by high doped concentration and broad FWHM, this study suggests that the glass can be applied to designing novel broadband fiber amplifiers working in C-L waveband.     

Design of single polarization single mode dispersion compensating photonic crystal fiber

In this paper, we present a photonic crystal fiber based on hexagonal structure for improved negative dispersion as well as high birefringence in the telecom wavelength bands. It is demonstrated that it is possible to obtain negative dispersion coefficient of −712 ps/(nm km) and relative dispersion slope (RDS) perfectly match to that of single mode fiber (SMF) of about 0.0036 nm⁻¹ at the operating wavelength 1550 nm. The proposed fiber exhibits high birefringence of the order 2.11 × 10⁻² with nonlinear coefficient about 57.57 W⁻¹ km⁻¹ at 1550 nm. Moreover, it is confirmed that the designed fiber successfully operates as a single mode in the entire band of interest.     

Ge quantum dot molecules and crystals: Preparation and properties

Templated self-organization has been used to prepare two-dimensional arrays as well as three-dimensional quantum dot crystals (QDC) containing Ge dots in a Si host crystal. Si(1 0 0) substrates have been patterned with two-dimensional hole gratings using extreme ultra-violet interference lithography (EUV-IL) and reactive ion etching. The EUV-IL was realized by multiple beam diffraction using Cr gratings on SiN_x membranes fabricated by e-beam lithography. Si/Ge overgrowth was performed by molecular beam epitaxy. The impact of the microscopic shape and size of the prepattern using the mask design and the EUV-IL exposure dose as parameters on the Ge dot nucleation has been studied with atomic force microscopy, transmission electron microscopy and photoluminescence measurements. Adjusting the growth parameters in multiple layer deposition the initial two-dimensional configuration was transferred into three-dimensional QDC.     

A high temperature sensor based on a peanut-shape structure Michelson interferometer

A fiber temperature sensor with high sensitivity based on a Michelson interferometer is realized by fusion-splicing a peanut-shape structure in single-mode fiber (SMF). The theory and experimental results show that the peanut-shape structure can couple the light energy of the core mode into the cladding and re-couple the light in the cladding into the core. A high-quality interference spectrum with a fringe visibility of about 18 dB is observed. Experimental demonstration shows that the device can be heated up to 900 °C with a sensitivity of about ∼0.096 nm/°C. The device has the advantages of low-cost, high sensitivity and easy fabrication, which makes it attractive for sensing applications.     

A multi-channel full-duplex 60-GHz-band radio-over-fiber system

We propose and simulate a novel full-duplex radio-over-fiber system using a single light source at central station (CS). The scheme is employed to generate 60-GHz optical millimeter wave at CS for down-link transmission while the same optical carrier is reused at base station for up-link connection. There is no additional laser source for the upstream data generation in the base station. The bidirectional full-duplex 2.5 Gb/s data are successfully transmitted over 40 km standard single-mode fiber (SMF). The power penalty for the down-link data after transmission over 40 km SMF is less than 0.6 dB, while for the up-link data, the power penalty after transmission over 40 km SMF is neglected. This system shows good performance over long-distance delivery and has important applicable value in high radio frequency (RF) sector and multi-channel full-duplex system.     

Polarization maintaining holey fibers for residual dispersion compensation over S + C + L wavelength bands

We report on a highly birefringent holey fiber for broadband dispersion compensation covering the S, C, and L telecommunication bands i.e. wavelength ranging from 1460 to 1625 nm. The finite element method with circular perfectly matched layer boundary condition is used to investigate the guiding properties. Numerical analysis demonstrates that it is possible to obtain negative dispersion coefficient of about −470 to −850 ps/nm/km over S to L-bands and a relative dispersion slope perfectly matched with single mode fiber (SMF) of about 0.0036 nm⁻¹ at 1550 nm. At the same time birefringence of the order 2.53 × 10⁻² is realized at 1550 nm wavelength. Owing to superior optical properties of the proposed holey fiber, this can be a promising candidate for broadband dispersion compensation and sensing applications.     

Surface plasmon enhanced ultra-low threshold second harmonic generation in periodically poled whispering gallery resonator

The surface plasmon enhanced ultra-low threshold second harmonic generation is observed, designed and simulated in whispering gallery resonator made of MgO doped periodically poled LiNbO₃. Here the electric field associated with incident optical radiation of picowatt level is amplified to milliwatt level through surface plasmon resonance in Kretschmann geometry which is formed by a BK₇ prism plane, 29 nm thin gold layer and 20 nm thin GaAs layer. This enhanced electric field then coupled to a whispering gallery resonator, which facilitated the generation of second harmonic for an incident laser radiation of picowatt level. In this proposed configuration with an incident optical power of 94.6 pW, generated second harmonic through whispering gallery resonator is found to be 14.6 mW.     

Dual mode emission and harmonic generation in ZnO-CaO-Al2O3: Er nano-composite

Er³⁺ doped ZnO-CaO-Al₂O₃ nano-composite phosphor has been synthesized through combustion method and its emission and harmonic generation properties have been studied. The X-ray diffraction and thermal analysis techniques have been used to prove the dual phase (ZnO and CaO-Al₂O₃) nature of the phosphor. The phosphor has shown up-conversion emission on near-infra-red (976 nm) excitation and down-conversion emission on 355 nm excitation in presence of Er³⁺ and thus behaves as a dual mode phosphor. On excitation with 976 nm diode laser, material shows color tunability (calcination of composite material at different temperatures). Formation of ZnO nanocrystals on heat treatment of as-synthesized sample has shown its characteristic emission at 388 nm and also the energy transfer from ZnO to Er³⁺ ions. The low temperature emission measurements have been carried out and the results have been discussed. Phosphor has shown strong second harmonic generation (SHG) at 532 nm on 1064 nm and at 266 nm on 532 nm excitation.     

Generation of green light in a thermally poled silica fiber by quasi-phase-matched second harmonic generation

Thermal poling is an attractive method to induce a nonlinear coefficient in silica materials. We have investigated potential silica materials with respect to their suitability for thermal poling and analyzed the achievable depletion thickness in the poling process. Based on this investigation, a fiber was designed and prepared for second harmonic generation. The generation of light in the visible range at a wavelength of 532 nm was successfully demonstrated with a poled fiber and with quasi-phase matching using a pump wavelength of 1064 nm.     

Study of near-infrared nonvolatile two-center holographic recording in LiNbO3:Fe:Rh crystal

The near-infrared nonvolatile holographic recording has been realized in a doubly doped LiNbO₃:Fe:Rh crystal by the traditional two-center holographic recording scheme, for the first time. The recording performance of this crystal has been investigated by recording with 633 nm red light, 752 nm red light and 799 nm near-infrared light and sensitizing with 405 nm purple light. The experimental results show that, co-doped with Fe and Rh, the near-infrared absorption and the photovoltaic coefficient of shallow trap Fe are enhanced in this LiNbO₃:Fe:Rh crystal, compared with other doubly doped LiNbO₃ crystals such as LiNbO₃:Fe:Mn. It is also found that the sensitizing light intensity affects the near-infrared recording sensitivity in a different way than two-center holographic recording with shorter wavelength, and the origin of experimental results is analyzed.     

Design of high-efficiency diffraction gratings based on total internal reflection for pulse compressor

We present designs of high-efficiency compression grating based on total internal reflection (TIR) for picosecond pulse laser at 1053 nm. The setup is devised by directly etching gratings into the bottom side of a prism so that light can successfully enter (or exit) the compression grating. Dependence of the −1 order diffraction efficiencies on the constructive parameters is analyzed for TE- and TM-polarized incident light at Littrow angle by using Fourier modal method in order to obtain optimal grating structure. The electric field enhancement within the high-efficiency TIR gratings is regarded as another criterion to optimize the structure of the TIR gratings. With the criterion of high diffraction efficiency, low electric field enhancement and sufficient manufacturing latitude, TIR compression gratings with optimized constructive parameters are obtained for TE- and TM-polarized incident light, respectively. The grating for TE-polarized light exhibits diffraction efficiencies higher than 0.95 within 23 nm bandwidth and relatively low square of electric field enhancement ratio of 5.7. Regardless of the internal electric field enhancement, the grating for TM-polarized light provides diffraction efficiencies higher than 0.95 within 42 nm bandwidth. With compact structure, such TIR compression gratings made solely of fused silica should be of great interest for application to chirped pulse amplification (CPA) systems.     

Luminescence properties of Ge implanted SiO2:Ge and GeO2:Ge films

We have investigated cathodeluminescence (CL) of Ge implanted SiO₂:Ge and GeO₂:Ge films. The GeO₂ films were grown by oxidation of Ge substrate at 550 °C for 3 h in O₂ gas flow. The GeO₂ films on Ge substrate and SiO₂ films on Si substrate were implanted with Ge-negative ions. The implanted Ge atom concentrations in the films were ranging from 0.1 to 6.0 at%. To produce Ge nanoparticles the SiO₂:Ge films were thermally annealed at various temperatures of 600-900 °C for 1 h in N₂ gas flow. An XPS analysis has shown that the implanted Ge atoms were partly oxidized. CL was observed at wavelengths around 400 nm from the GeO₂ films before and after Ge⁻-implantation as well as from SiO₂:Ge films. After Ge⁻-implantation of about 0.5 at% the CL intensity has increased by about four times. However, the CL intensity from the GeO₂:Ge films was several orders of magnitude smaller than the intensity from the 800 °C-annealed SiO₂:Ge films with 0.5 at% of Ge atomic concentration. These results suggested that the luminescence was generated due to oxidation of Ge nanoparticles in the SiO₂:Ge films.