Structure formation in atom lithography using geometric collimation

Atom lithography uses standing wave light fields as arrays of lenses to focus neutral atom beams into line patterns on a substrate. Laser cooled atom beams are commonly used, but an atom beam source with a small opening placed at a large distance from a substrate creates atom beams which are locally geometrically collimated on the substrate. These beams have local offset angles with respect to the substrate. We show that this affects the height, width, shape, and position of the created structures. We find that simulated effects are partially obscured in experiments by substrate-dependent diffusion of atoms, while scattering and interference just above the substrate limit the quality of the standing wave lens. We find that in atom lithography without laser cooling the atom beam source geometry is imaged onto the substrate by the standing wave lens. We therefore propose using structured atom beam sources to image more complex patterns on subwavelength scales in a massively parallel way.     

Stress and morphology evolution during island growth

We performed a series of hybrid molecular-dynamics simulations of island growth on a substrate and monitored island stress evolution for several different island/substrate interfacial energies. Smaller (larger) interfacial energy yields islands with a stronger (weaker) compressive stress-thickness product. We present analytical results that suggest that the stress-thickness product is a linear function of the substrate coverage, with slope equal to minus the substrate surface stress, if the island is in mechanical equilibrium, and verify these results with simulation data.     

Growth of InN thin films on ZnO substrate by plasma-assisted molecular beam epitaxy

We have studied the microstructure property of InN epitaxial films grown on ZnO substrate by plasma-assisted molecular beam epitaxy. We found that the In₂O₃ compound was produced on ZnO substrate and many pits were formed on the InN films when InN was directly grown on ZnO substrate with the N/In flux ratio less than 40. We demonstrated that the quality of InN film was significantly improved when the In₂O₃ layer was used as a buffer to prevent the reaction between In and the ZnO substrate.     

Rigorous Generalization of Young's Law for Heterogeneous and Rough Substrates

We consider a SOS type model of interfaces on a substrate which is both heterogeneous and rough. We first show that, for appropriate values of the parameters, the differential wall tension that governs wetting on such a substrate satisfies a generalized law which combines both Cassie and Wenzel laws. Then in the case of an homogeneous substrate, we show that this differential wall tension satisfies either the Wenzel's law or the Cassie's law, according to the values of the parameters.     

Modelling self-ordering behaviour on Ag covered Pt vicinal surfaces

We use computer simulation to explore the formation process of a monolayer of Ag on a stepped Pt(111) substrate and the formation of 3D Pt nanostructures on an Ag covered (111) and (100) Pt substrate. We show that broken lines of Pt nanostructures are preferred at the step edges on the (111) substrate while continuous lines of Pt nanowires are preferred at the step edge on the (100) substrate. This different behaviour is due to the exposed front facet of the nanostructures running along the step, specifically for the (100) stepped substrate a nanowire grown on the step edge has a stable (111) exposed front facet, whereas a nanowire grown on the (111) substrate would have an unstable (100) front facet (depending on the direction of the step). For the Pt nanowires grown on the (100) substrate we show how arriving Pt dimers (and monomers) preferentially move up off the Ag substrate onto the nanowire's (111) facet where they undergo fast diffusion. We also show that these Pt dimers (and monomers) move up and down the nanowire's facet until a vacancy or defect is encountered.     

Interface effects in ferroelectric PbTiO3 ultrathin films on a paraelectric substrate

Interface effects on the ferroelectric behavior of PbTiO3 ultrathin films deposited on a SrTiO3 substrate are investigated using an interatomic potential approach with parameters fitted to first-principles calculations. We find that the correlation of atomic displacements across the film-substrate interface is crucial for the stabilization of the ferroelectric state in films a few unit cells thick. We show that the minimum film thickness for the appearance of a spontaneous polarized domain state is not an intrinsic property of the ferroelectric film but depends on the polarizability of the paraelectric substrate. We also observe that the substrate displays an induced polarization with an unusual oscillatory behavior.     

Identifying bacterial fragments on morphologically similar substrate using UAFM

The ultrasonic atomic force microscopy (UAFM) can be used effectively to map the elasticity of a surface. Using this technique we have demonstrated that biological fragments on a substrate can be easily identified which is otherwise difficult using only an AFM image. We have shown that AFM image can falsely interpret the surface morphological features on the substrate. We have taken the bacteria Pseudomonas sp. as a case study to demonstrate that UAFM technique is a powerful tool to study biological samples and differentiate morphological features on the substrate.     

Long ranged correlations at a solid-fluid interface A signature of the approach to complete wetting

We have investigated the behaviour of the pairwise distribution function for Sullivan's model of a gas adsorbed on a solid substrate. We show that in the approach to complete wetting, when a thick film of liquid density is adsorbed on the substrate, long ranged transverse correlations (parallel to the surface) develop at the edge of the film where the density profile of the fluid resembles that of a liquid-gas interface. The long ranged correlations can be attributed to damped capillary-wave-like fluctuations; for a class I wetting situation the damping decreases and the range of the correlations increases and ultimately diverges as the bulk gas pressure approaches the saturated vapour pressure.

Our analysis provides a physical explanation of the long ranged transverse correlations calculated by Foiles and Ashcroft in their recent study of a model of argon at a carbon dioxide substrate. We also predict that long range transverse correlations will occur for the case of adsorption from a dense liquid provided the solid-fluid potential is such that a thick film of gas forms between the substrate and the bulk liquid.     

Interfacial premelting and the thermomolecular force: thermodynamic buoyancy

The presence of a substrate can alter the equilibrium state of another material near their common boundary. Examples include wetting and interfacial premelting. In the latter case, temperature gradients induce spatial variations in the thickness of the premelted film that reflect changes in the strength of the repulsion between the substrate and the solid. We show that the net thermomolecular force on a macroscopic substrate is equivalent to a thermodynamic buoyancy force-proportional to the mass of solid that can occupy the volume enclosed by the substrate and the temperature gradient.     

Dynamics of photo-induced terahertz optical activity in metal chiral gratings

We investigated the dynamics of photo-induced optical activity of metal chiral gratings on an Si substrate for terahertz (THz) waves. We employed a new technique that enables optical-pump and THz-probe measurements via broadband THz spectroscopy at the microsecond time scale using a low-repetition-rate pump and a high-repetition-rate probe. We revealed that the THz optical activity decays as a result of the carrier diffusion effect because this optical activity is because of the presence of three-dimensional chiral structures of photo-carriers in the Si substrate.     

Screw misfit dislocations in soft substrates of epitaxial heterostructures

We derive compact analytical formulae for the elastic field induced by an anti-plane mismatch deformation in a heterostructure with different elastic moduli of the constituents. Unlike previous studies, we consider the possibility that the misfit dislocations may appear in the substrate, not in the epilayer. We show that this situation can be realized in heterostructures where the substrate is softer than the epilayer. In order to avoid cumbersome calculations, we consider screw misfit dislocations. The misfit dislocations emerge with zero density away from the interface in the body of the substrate when the epilayer reaches its critical thickness. Thus the epilayer remains free from dislocations if it is grown on a softer substrate. This property, which was recently observed experimentally, may find numerous applications in electronics, where epilayers are widely used as active elements.     

Ultrasonic Vibration Suspends Large Pendant Drops

A stationary substrate can suspend only small pendant drops even with excellent wetting ability because of gravity. We report the suspension of large pendant water drops by a copper substrate that vibrates ultrasonically with a frequency of 22 kHz. The mass of the largest pendant drop suspended by the vibrating substrate reaches 1.1 g, which is 9 times that by the same stationary substrate. The pendant drop deforms drasticaJly and quickly at both the beginning and the end of the vibration procedure. As the vibration power increases, the contact area between the drop and substrate expands and the drop height shrinks accordingly. Theoretical analysis indicates that the Bernoulli pressure induced by ultrasonic vibration may contribute strongly to enhancing the suspensibility of pendant drops.     

The definition and calculation of interfacial energies for thin films

We provide a new definition of the interfacial energy which eliminates three physically extraneous contributions from the conventional definition: (1) the strain or stress energy due to lattice mismatch between film and substrate; (2) the surface energy of the film-vacuum interface; and, (3) the substrate surface energy contribution from substrate layers below the film layers. This new interface energy then quantifies the variation in interactions among film/substrate, film/film and substrate/substrate bonding. Using this new definition, we derive the equations for evaluation of the interfacial energy in terms of the interaction energy for any atom in each layer of the film/substrate, film/film and substrate/substrate systems. With this formulation, it is simple to determine the dependence of the interfacial energy on the film thickness using virtually any interaction potential. Using a corrected effective medium theory, we present results for a few pseudomorphic film systems containing Ni/Cu, Ni/Ag, Cu/Ag and Rh/Ag on (111) and (100) surfaces. These systems cover a wide range of lattice mismatch and alloy formation energies. The results demonstrate that the new definition of interfacial energy converges after only 3–4 film layers, regardless of the degree of lattice mismatch. We also show that the interfacial energies at (100) and (111) interfaces differ and that the interfacial energy for a given pair of materials depends on which of the materials is the film.     

Crack front dynamics across a single heterogeneity

We study the spatiotemporal dynamics of a crack front propagating at the interface between a rigid substrate and an elastomer. We first characterize the kinematics of the front when the substrate is homogeneous and find that the equation of motion is intrinsically nonlinear. We then pattern the substrate with a single defect. Steady profiles of the front are well described by a standard linear theory with nonlocal elasticity, except for large slopes of the front. In contrast, this theory seems to fail in dynamical situations, i.e., when the front relaxes to its steady shape, or when the front pinches off after detachment from a defect. More generally, these results may impact the current understanding of crack fronts in heterogeneous media.     

Heterogeneous crystal nucleation: the effect of lattice mismatch

A simple dynamical density functional theory is used to investigate freezing of an undercooled liquid in the presence of a crystalline substrate. We find that the adsorption of the crystalline phase on the substrate, the contact angle, and the height of the nucleation barrier are nonmonotonic functions of the lattice constant of the substrate. We show that the free-growth-limited model of particle-induced freezing by Greer et al. [Acta Mater. 48, 2823 (2000)] is valid for larger nanoparticles and a small anisotropy of the interface free energy. Faceting due to the small size of the foreign particle or a high anisotropy decouples free growth from the critical size of homogeneous nuclei.     

The influence of substrate etched on the quality of GaN epilayers

We report the growth of GaN epilayers on the sapphire substrate etched by MOCVD. Sapphire substrate is etched by H₃PO₄ and NaOH. The Raman scattering spectroscopy and photoetching analyses show that the substrate etched can effectively decrease the residual stress and the dislocations density in these epilayers. The X-ray diffraction analysis shows the process can reduce the value of the FWHM. Therefore, the quality of GaN epilayers should be improved by substrate etched.     

Diffusion driven concerted motion of surface atoms: Ge on Ge(001)

The diffusion of Ge dimers on the Ge(001) surface has been studied with scanning tunneling microscopy. We have identified three different diffusion pathways for the dimers: diffusion of on-top dimers over the substrate rows, diffusion across the substrate rows, and diffusion of dimers in the trough. We report on a heretofore unknown phenomenon, namely, diffusion driven concerted motion of substrate atoms. This concerted motion is a direct consequence of the rearrangement of substrate atoms in the proximity of the trough dimer adsorption site.     

Shallow implantation of "Size-Selected" Ag clusters into graphite

We have investigated the implantation of Ag(N) (N = 20-200) clusters into a graphite substrate over the range of energies (E) 0.75-6 keV using molecular dynamics simulations. We find that after implantation the silver clusters remain coherent, albeit amorphous, and rest at the bottom of an open tunnel in the graphite created by the impact. It is found that the implantation depth of the clusters varies linearly as E/N2/3. We conclude that the cluster is decelerated by a constant force proportional to its cross-sectional area. We also identify a threshold energy for surface penetration associated with elastic compression of the graphite substrate.