Properties of highly oriented spray-deposited fluorine-doped tin oxide thin films on glass substrates of different thickness

Transparent conducting thin films of fluorine-doped tin oxide (FTO) have been deposited onto the preheated glass substrates of different thickness by spray pyrolysis process using SnCl₄·5H₂O and NH₄F precursors. Substrate thickness is varied from 1 to 6 mm. The films are grown using mixed solvent with propane-2-ol as organic solvent and distilled water at optimized substrate temperature of 475 °C. Films of thickness up to 1525 nm are grown by a fine spray of the source solution using compressed air as a carrier gas. The films have been characterized by the techniques such as X-ray diffraction, optical absorption, van der Pauw technique, and Hall effect. The as-deposited films are preferentially oriented along the (2 0 0) plane and are of polycrystalline SnO₂ with a tetragonal crystal structure having the texture coefficient of 6.19 for the films deposited on 4 mm thick substrate. The lattice parameter values remain unchanged with the substrate thickness. The grain size varies between 38 and 48 nm. The films exhibit moderate optical transmission up to 70% at 550 nm. The figure of merit (φ) varies from 1.36×10⁻⁴ to 1.93×10⁻³ Ω⁻¹. The films are heavily doped, therefore degenerate and exhibit n-type electrical conductivity. The lowest sheet resistance (R_s) of 7.5 Ω is obtained for a typical sample deposited on 4 mm thick substrate. The resistivity (ρ) and carrier concentration (n_D) vary over 8.38×10⁻⁴ to 2.95×10⁻³ Ω cm and 4.03×10²⁰ to 2.69×10²¹ cm⁻³, respectively.     

Design strategy for broadband or dual-band ultrathin imaging system

Using reflective multiple-fold approach can reduce bulk and weight compared with large high-quality optical systems and improved resolution and light collection compared with miniature conventional systems. Air-spaced concentric multi-reflection (ACMR) systems, where two reflective surfaces surround a hollow cavity, are useful for extended focal distance, achromatic aberration, useful for inexpensive, lightweight IR imagers and may lead to convenient designs for broadband or dual-band imagers. Design a camera, which spectral response 2?12 μm, with a total thickness of 30 mm, 130 mm effective focal length, ±4.2° FOV, 0.022 mrad resolution and 68 mm effective aperture, 96 mm outer aperture. Application can fit into the hull or wing of a micro-UAV aircraft, which weight and thickness are tightly constrained, for long range surveillance.     

Laser-induced swelling of transparent glasses

We describe the process of forming bumps on the surface of transparent glasses such as display glasses with moderate thermal expansion ∼3.2 × 10⁻⁶ K⁻¹ and high coefficient of thermal expansion (CTE) glasses, e.g. soda-lime glasses with CTE ∼9 × 10⁻⁶ K⁻¹ using high-power ultra-violet (UV) lasers at a wavelength where glass is transparent. We characterize the effect with optical dynamic measurements. The process relies on increased glass absorption from color-center generation and leads to glass swelling with bumps formation. The bump height may constitute more than 10% of the thickness of the glass sample. The required exposure time is relatively short ∼1 s, and depends on the glass properties, laser power, its repetition rate, and focusing conditions. A brief review of the potential applications for these bumps is provided.     

High resolution diffusion weighted magnetic resonance imaging of the pancreas using reduced field of view single-shot echo-planar imaging at 3 T

Diffusion weighted magnetic resonance imaging (DWI) has been mostly acquired using single-shot echo-planar imaging (ss EPI) to minimize motion induced artifacts. The spatial resolution, however, is inherently limited in ss EPI especially for abdominal imaging, even with the advances in parallel imaging. A novel method of reduced Field of View ss EPI (rFOV ss EPI) has achieved high resolution DWI in human carotid artery, spinal cord with reduced blurring and higher spatial resolution than conventional ss EPI, but it has not been used to pancreas imaging. In the work, comparisons between the full FOV ss-DW EPI and rFOV ss-DW EPI in image qualities and ADC values of pancreatic tumors and normal pancreatic tissues were performed to demonstrate the feasibility of pancreatic high resolution rFOV DWI. There were no significant differences in the mean ADC values between full FOV DWI and rFOV DWI for the 17 subjects using b = 600 s/mm² (P = 0.962). However, subjective scores of image quality was significantly higher at rFOV ss DWI (P = 0.008 and 0.000 for b-value = 0 s/mm² and 600 s/mm² respectively). The spatial resolution of DWI for pancreas was increased by a factor of over 2.0 (from almost 3.0 mm/pixel to 1.25 mm/pixel) using rFOV ss EPI technique. Reduced FOV ss EPI can provide good DW images and is promising to benefit applications for pancreatic diseases.     

Bonding and impedance matching of acoustic transducers using silver epoxy

Silver epoxy was selected to bond transducer plates on glass substrates. The properties and thickness of the bonding medium affect the electrical input impedance of the transducer. Thus, the thickness of the silver epoxy bonding layer was used as a design parameter to optimize the structure for the transducer input impedance to match the 50 Ω output impedance of most radio frequency (RF) generators. Simulation and experimental results show that nearly perfect matching is achieved without using any matching circuit. At the matching condition, the transducer operates at a frequency band a little bit below the half-wavelength resonant frequency of the piezoelectric plate. In experiments, lead titanate (PT) piezoelectric plates were employed. Both full-size, 11.5 mm × 2 mm × 0.4 mm, and half-size, 5.75 mm × 2 mm × 0.4 mm, can be well matched using optimal silver epoxy thickness. The transducer assemblies demonstrate high efficiency. The conversion loss from electrical power to acoustic power in soda-lime glass is 4.3 dB. This loss is low considering the fact that the transducers operate at off-resonance by 12%. With proper choice of silver epoxy thickness, the transducer can be matched at the fundamental, the 3rd and 5th harmonic frequencies. This leads to the possible realization of triple-band transducers. Reliability was assessed with thermal cycling test according to Telcordia GR-468-Core recommendation. Of the 30 transducer assemblies tested, none broke until 2900 cycles and 27 have sustained beyond 4050 cycles.     

Preparation and characterization of nanocrystalline ITO thin films on glass and clay substrates by ion-beam sputter deposition method

Nanocrystalline indium tin oxide (ITO) thin films were prepared on clay-1 (Clay-TPP-LP-SA), clay-2 (Clay-TPP-SA) and glass substrates using ion-beam sputter deposition method. X-ray diffraction (XRD) patterns showed that the as-deposited ITO films on both clay-1 and clay-2 substrates were a mixture of amorphous and polycrystalline. But the as-deposited ITO films on glass substrates were polycrystalline. The surface morphologies of as-deposited ITO/glass has smooth surface; in contrast, ITO/clay-1 has rough surface. The surface roughnesses of ITO thin films on glass and clay-1 substrate were calculated as 4.3 and 83 nm, respectively. From the AFM and SEM analyses, the particle sizes of nanocrystalline ITO for a film thickness of 712 nm were calculated as 19.5 and 20 nm, respectively. Optical study showed that the optical transmittance of ITO/clay-2 was higher than that of ITO/clay-1. The sheet resistances of as-deposited ITO/clay-1 and ITO/clay-2 were calculated as 76.0 and 63.0 Ω/□, respectively. The figure of merit value for as-deposited ITO/clay-2 (12.70 × 10⁻³/Ω) was also higher than that of ITO/clay-1 (9.6 × 10⁻³/Ω), respectively. The flexibilities of ITO/clay-1 and ITO/clay-2 were evaluated as 13 and 12 mm, respectively. However, the ITO-coated clay-2 substrate showed much better optical and electrical properties as well as flexibility as compared to clay-1.     

Femtosecond and nanosecond laser damage thresholds of doped and undoped triazenepolymer thin films

The influence of pulse duration on the laser-induced damage in undoped or infrared-absorbing-dye doped thin triazenepolymer films on glass substrates has been investigated for single, near-infrared (800 nm) Ti:sapphire laser pulses with durations ranging from 130 fs up to 540 fs and complementarily for infrared (1064 nm) Nd:YAG ns-laser single-pulse irradiation. The triazenepolymer material has been developed for high resolution ablation with irradiation at 308 nm. Post-irradiation optical microscopy observations have been used to determine quantitatively the threshold fluence for permanent laser damage. In contrast to our previous studies on a triazenepolymer with different composition [J. Bonse, S.M. Wiggins, J. Solis, T. Lippert, Appl. Surf. Sci. 247 (2005) 440], a significant dependence of the damage threshold on the pulse duration is found in the sub-picosecond regime with values ranging from ∼500 mJ/cm² (130 fs) up to ∼1500 mJ/cm² (540 fs). Other parameters such as the film thickness (50 nm and 1.1 μm samples) or the doping level show no significant influence on the material behavior upon irradiation. The results for fs- and ns-laser pulse irradiation are compared and analyzed in terms of existent ablation models.     

Transparent conducting molybdenum-doped zinc oxide films deposited by RF magnetron sputtering

A new transparent conducting oxide (TCO) film with low resistivity and high transmittance in the visible range, molybdenum-doped zinc oxide (MZO), was successfully prepared by RF magnetron sputtering method on glass substrates at room temperature. The structural, electrical, and optical properties as a function of film thickness were investigated. All the samples have a preferred orientation with the (0 0 2) planes parallel to the substrates. The resistivity initially decreases and then shows an increase with the increase of the film thickness. When the thickness is 400 nm, the film has its best crystallinity and lowest resistivity 9.2 × 10⁻⁴ Ω cm with a Hall mobility of 30 cm² V⁻¹ s⁻¹ and a carrier concentration of 2.3 × 10²⁰ cm⁻³. The average transmittance in the visible range exceeds 84% for all thickness films.     

Adhesion and stress of magnesium oxide thin films: Effect of thickness, oxidation temperature and duration

Nanoscale magnesium oxide thin films have been deposited on glass substrate by thermal oxidation (in air) of vacuum evaporated magnesium films. X-ray diffraction (XRD) showed orientation along (2 0 0) and (2 2 0) directions. The mechanical properties of the MgO thin films were found to be the function of thickness (300, 450 and 600 nm), oxidation temperature (573, 623 and 673 K) and oxidation duration (90 and 180 min). As oxidation temperature and oxidation duration increases, adhesion and intrinsic stress were found to increase. Intrinsic stress decreased whereas adhesion increased due to increase in thin film thickness. The value of intrinsic stress was in range 28.902-73.212 (×10⁷ N/m²) and that of adhesion was 12.1-27.4 (×10⁴ N/m²) for the thin film of thickness 300 nm.     

Effect of seed layer on the growth of well-aligned ZnO nanowires

We demonstrate that vertical well-aligned crystalline ZnO nanowire arrays were grown on ZnO/glass substrates by a low-temperature solution method. Different thicknesses of ZnO seed layers on glass substrates were prepared by radio-frequency sputtering. In this work it was found that the morphology of ZnO nanowires strongly depends on the thickness of ZnO seed layers. The average diameter of nanowires is increased from 50 to 130 nm and the nanowire density is decreased from 110 to 60 μm⁻² while the seed layer thickness is varied from 20 to 1000 nm. The improved control of the morphology of ZnO nanowire arrays may lead to an enhanced carrier collection of hybrid polymer photovoltaic devices based on ZnO.     

Friction and wear performance of some thermoplastic polymers and polymer composites against unsaturated polyester

Wear experiments have been carried out with a range of unfilled and filled engineering thermoplastic polymers sliding against a 15% glass fibre reinforced unsaturated polyester polymer under 20, 40 and 60 N loads and 0.5 m/s sliding speed. Pin materials used in this experimental investigation are polyamide 66 (PA 66), poly-ether-ether-ketone (PEEK) and aliphatic polyketone (APK), glass fibre reinforced polyamide 46 (PA 46 + 30% GFR), glass fibre reinforced polytetrafluoroethylene (PTFE + 17% GFR), glass fibre reinforced poly-ether-ether-ketone (PEEK + 20% GFR), glass fibre reinforced poly-phylene-sulfide (PPS + 30% GFR), polytetrafluoroethylene filled polyamide 66 (PA 66 + 10% PTFE) and bronze filled pofytetrafluoroethylene (PTFE + 25% bronze) engineering polymers. The disc material is a 15% glass fibre reinforced unsaturated polyester thermoset polymer produced by Bulk Moulding Compound (BMC). Sliding wear tests were carried out on a pin-on-disc apparatus under 0.5 m/s sliding speed and load values of 20, 40 and 60 N. The results showed that the highest specific wear rate is for PPS + 30% GFR with a value of 1 × 10⁻¹¹ m²/N and the lowest wear rate is for PTFE + 17% GFR with a value of 9.41 × 10⁻¹⁵ m²/N. For the materials and test conditions of this investigation, apart from polyamide 66 and PA 46 + 30% GFR polymers, the coefficient of friction and specific wear rates are not significantly affected by the change in load value. For polyamide 66 and PA 46 + 30% GFR polymers the coefficient of friction and specific wear rates vary linearly with the variation in load values.     

Fabrication and electromagnetic performance of micro-tubular nanocomposites composed of monodisperse iron nanoparticles and carbon

Low density and thin thickness are essential for electromagnetic (EM) wave absorbers. In this study, we fabricated a novel micro-tubular iron nanocomposite (MTIC) that composed of carbon microtubes and monodisperse iron nanoparticles (NPs). The bulk density of MTIC is only 0.35±0.04 g cm⁻³ due to its micro-tubular structure. The presence of iron NPs increased the magnetic loss significantly and therefore enhanced the reflection loss (RL) of MTIC/paraffin composite. The optimum thickness for the composite is 1.5-1.8 mm, with maximum bandwidth of 7.6 GHz for RL<−5 dB and 3.6 GHz for RL<−10 dB. The corresponding frequency at this thickness is 10-18 GHz. Because of low density and broad bandwidth at thin thickness, MTIC is a promising light-weight absorber for EM wave absorption or microwave shielding. This study will also provide new ideas for fabricating microwave absorbers with low density and thin thickness.     

High work function of Al-doped zinc-oxide thin films as transparent conductive anodes in organic light-emitting devices

Deposition of Al-doped ZnO (AZO) films with various film thicknesses on glass substrates was performed to investigate the feasibility of using AZO films as anode electrodes in organic light-emitting devices (OLEDs). The electrical resistivity of the AZO films with a 180-nm thickness was 4.085 × 10⁻² Ω cm, and the average optical transmittance in the visible range was 80.2%. The surface work function for the AZO films, determined from the secondary electron emission coefficients obtained with a focused ion beam, was as high as 4.62 eV. These results indicate that AZO films grown on glass substrates hold promise for potential applications as anode electrodes in high-efficiency OLEDs.     

Effect of mesh patterning with UV pulsed-laser on optical and electrical properties of ZnO/Ag-Ti thin films

In this study, the ZnO/Ag-Ti structure for transparence conducting oxide (TCO) is investigated by optimizing the thickness of the Ag-Ti alloy and ZnO layers. The Ag-Ti thin film is deposited by DC magnetron sputtering and its thicknesses is well controlled. The ZnO thin film is prepared by sol-gel method using zinc acetate as cation source, 2-methoxiethanol as solvent and monoethanolamine as solution stabilizer. The ZnO film deposition is performed by spin-coating technique and dried at 150 °C on Corning 1737 glass. Due to the conductivity of ZnO/Ag-Ti is dominated by Ag-Ti, the sheet resistance of ZnO/Ag-Ti decrease dramatically as the thickness of Ag-Ti layer increases. However, the transmittances of ZnO/Ag-Ti become unacceptable for TCO application after the thickness of Ag-Ti layer beyond 6 nm. The as-deposited ZnO/Ag-Ti structure has the optical transmittance of 83% @ 500 nm and the low resistivity of 1.2 × 10⁻⁵ Ω-cm. Furthermore, for improving the optical and electrical properties of ZnO/Ag-Ti, the thermal treatment using laser is adopted. Experimental results indicate that the transmittance of ZnO/Ag-Ti is improved from 83% to 89% @ 500 nm with resistivity of 1.02 × 10⁻⁵ Ω-cm after laser drilling. The optical spectrum, the resistance, and the morphology of the ZnO/Ag-Ti will be reported in the study.     

Two-dimensional dopant profiling of silicon with submicron resolution using near field optics on silicon/electrolyte contacts

We demonstrate the possibility to use near field optics to perform two-dimensional dopant profiling on silicon surface, with deep submicron spatial resolution. The sample surface is contacted by an aqueous electrolyte giving a reverse biased junction that is illuminated by a subwavelength optical source, in near filed conditions. A staircase calibration structure was used with several boron-doped layers with either 4 μm or 0.4 μm thickness and doping between 10¹⁷ and 10²⁰ at/cm³. Measurements were performed on the sample cross section. It is shown that photocurrent surface mapping shows up the doped areas with a lateral resolution better than 100 nm.     

Growth characteristics and properties of ZnO:Ga thin films prepared by pulsed DC magnetron sputtering

Transparent conductive ZnO:Ga thin films were deposited on Corning 1737 glass substrate by pulsed direct current (DC) magnetron sputtering. The effects of process parameters, namely pulse frequency and film thickness on the structural and optoelectronic properties of ZnO:Ga thin films are evaluated. It shows that highly c-axis (0 0 2) oriented polycrystalline films with good visible transparency and electrical conductivity were prepared at a pulsed frequency of 10 kHz. Increasing the film thickness also enlarged the grain size and carrier mobility which will subsequently lead to the decrease in resistivity. In summary, ZnO:Ga thin film with the lowest electrical resistivity of 2.01 × 10⁻⁴ Ω cm was obtained at a pulse frequency of 10 kHz with 500 nm in thickness. The surface RMS (root mean square) roughness of the film is 2.9 nm with visible transmittance around 86% and optical band gap of 3.83 eV.     

Femtosecond laser-induced damage of gold films

Single- and multi-shot ablation thresholds of gold films in the thickness range of 31-1400 nm were determined employing a Ti:sapphire laser delivering pulses of 28 fs duration, 793 nm center wavelength at 1 kHz repetition rate. The gold layers were deposited on BK7 glass by an electron beam evaporation process and characterized by atomic force microscopy and ellipsometry. A linear dependence of the ablation threshold fluence F_th on the layer thickness d was found for d ≤ 180 nm. If a film thickness of about 180 nm was reached, the damage threshold remained constant at its bulk value. For different numbers of pulses per spot (N-on-1), bulk damage thresholds of ∼0.7 J cm⁻² (1-on-1), 0.5 J cm⁻² (10-on-1), 0.4 J cm⁻² (100-on-1), 0.25 J cm⁻² (1000-on-1), and 0.2 J cm⁻² (10000-on-1) were obtained experimentally indicating an incubation behavior. A characteristic layer thickness of L_c ≈ 180 nm can be defined which is a measure for the heat penetration depth within the electron gas before electron-phonon relaxation occurs. L_c is by more than an order of magnitude larger than the optical absorption length of α⁻¹ ≈ 12 nm at 793 nm wavelength.     

CuInS2 thin films obtained through the annealing of chemically deposited In2S3-CuS thin films

In this work, we report the formation of CuInS₂ thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In₂S₃) at 300 and 350 °C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the multilayers with indium sulfide. The XRD analysis showed that the crystallographic structure of the CuInS₂ (JCPDS 27-0159) is present on the deposited films. From the optical analysis it was estimated the band gap value for the CIS film (1.49 eV). The electrical conductivity varies from 3 × 10⁻⁸ to 3 Ω⁻¹ cm⁻¹ depending on the thickness of the CuS film. CIS films showed p-type conductivity.     

Preparation and characterization of carbonyl iron/glass composite absorber as matched load for isolator

Composite absorbers made from 66 wt% carbonyl iron and 34 wt% low melting point glass powder were prepared by a pressureless sintering technique in a nitrogen atmosphere. Apparent porosity and bending strength of the as-prepared composites were investigated. The microstructure, heat resisting properties and electromagnetic properties were characterized by scanning electron microscopy, thermal gravimetric analysis–differential scanning calorimetry and vector network analyzer. The results show that the carbonyl iron/glass composite absorbers were difficult to densify. As the sintering temperature and soaking time increased, the apparent porosity first decreased and then increased, whereas the bending strength showed the opposite change. The composite absorber sintered at 520 °C for 40 min achieved the minimum apparent porosity of 13.08% and the highest bending strength of 52 MPa. Compared to the carbonyl iron/silicone rubber absorber, the carbonyl iron/glass composite absorber exhibited better heat resisting properties, and the initial oxidation temperature was increased about 200 °C. The composite absorber with a thickness of 1.25 mm showed a good microwave absorbing property in 8–12 GHz.     

Dependence of film thickness on the structural and optical properties of ZnO thin films

ZnO thin films are prepared on glass substrates by pulsed filtered cathodic vacuum arc deposition (PFCVAD) at room temperature. Optical parameters such as optical transmittance, reflectance, band tail, dielectric coefficient, refractive index, energy band gap have been studied, discussed and correlated to the changes with film thickness. Kramers-Kronig and dispersion relations were employed to determine the complex refractive index and dielectric constants using reflection data in the ultraviolet-visible-near infrared regions. Films with optical transmittance above 90% in the visible range were prepared at pressure of 6.5 × 10⁻⁴ Torr. XRD analysis revealed that all films had a strong ZnO (0 0 2) peak, indicating c-axis orientation. The crystal grain size increased from 14.97 nm to 22.53 nm as the film thickness increased from 139 nm to 427 nm, however no significant change was observed in interplanar distance and crystal lattice constant. Optical energy gap decreased from 3.21 eV to 3.19 eV with increasing the thickness. The transmission in UV region decreased with the increase of film thickness. The refractive index, Urbach tail and real part of complex dielectric constant decreased as the film thickness increased. Oscillator energy of as-deposited films increased from 3.49 eV to 4.78 eV as the thickness increased.