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1.
Determination of the depth distribution of complex nanostructures by X-ray photoelectron spectroscopy (XPS) inelastic background analysis may be complicated if the sample materials have widely different inelastic scattering cross-sections. It was recently demonstrated that this may be solved by using a mixture of cross-sections. This permits retrieval of depth distributions of complex stacks and deeply buried layers with a typical 5% accuracy. This requires however that the cross-sections of the individual sample materials are known which is often not the case and this can complicate practical use for routine analysis. In this paper, we explore to what extent a suitable two- or three-parameter cross-section can be defined independent of prior knowledge of the cross-sections involved but simply defined by fitting the cross-section parameters to the spectrum being analyzed. This paper presents a theoretical study following our recent paper that explored how to make the best choice of inelastic mean free path and inelastic scattering cross-section for the inelastic background analysis with the Quases-Tougaard software. It was previously shown that a rough analysis of the inelastic background could give a good idea of the depth distribution. Here, we demonstrate with model spectra from buried layers created with Quases-Tougaard Generate software that a rather accurate analysis can be performed for very different cases with an average ~5% error. This analysis is easy to apply as it only needs the two- or three-parameter cross-sections generated with the Quases-Tougaard software. This study is aimed to improve routine analysis of the inelastic background of XPS and hard X-ray photoelectron spectroscopy (HAXPES) spectra. 相似文献
2.
Measurements are reported for attenuation lengths in overlayers of guanine, poly(styrene), poly(methyl methacrylate) and poly(2‐vinylpyridine) in the energy range 700–1400 eV to evaluate the accuracy of theoretical computations and generic equations. The layers are deposited on gold, either by evaporation and condensation or by spin casting. Measurements are made by X‐ray photoelectron spectroscopy (XPS) for the substrate Au 4f, 4d and 4p peaks as well as the overlayer N 1s peak in guanine and poly(2‐vinylpyridine). These measurements all correlate with the theory of Tanuma, Powell and Penn, to an RMS deviation of 11%. Correlations with the predictions using the generic equation known as TPP‐2M exhibit a poorer RMS deviation of 20%. Use of an ‘average’ organic material for the inelastic mean free paths for the four materials also leads to a 20% RMS deviation. Additional data are also presented for Irganox 1010 that is used, increasingly, as a reference sample for secondary ion mass spectrometry. Comparisons for 5 materials with the Gries G1 formula gives an RMS deviation of 13%, but a small change to interpolate between Gries' classes of organic materials with H/C being around either 1 or 2, leads to a reduced RMS deviation of 10%. This final version, G1‐SS, requiring only the material density and chemical formula, is very simple to use for all organic materials where these data are known or can be estimated. © Crown copyright 2010. Reproduced with the permission of Her Majesty's Stationery Office. Published by John Wiley & Sons, Ltd. 相似文献
3.
The shape of the background in x‐ray photoemission spectra is strongly affected by scattered electrons from inelastic energy loss processes. A polynomial of low order has very often been applied to model the secondary‐electron background, giving satisfying results in some cases. An improved analysis employing the Tougaard background model has been successfully used to characterize the inelastic loss processes. However, the correct usage of the Tougaard background needs a well defined inelastic electron scattering cross‐section function λ( E) · K( E, T) (λ = inelastic mean free path, E = kinetic energy, T = energy loss). This paper presents a four‐parameter loss function λ( E) · K( E, T) = B · T/( C + C′ · T2) 2 + D · T2 with the fitting parameters B, C, C′ and D implemented in the background function allowing the improved estimation of the λ( E) · K( E, T) function for homogenous materials. The fit of the background parameters is carried out parallel to the peak fit. The results will be compared with the parameters recommended by Tougaard. The calculation of inelastic electron scattering cross‐sections of clean surfaces from different materials using UNIFIT 2011 will be demonstrated. Copyright © 2011 John Wiley & Sons, Ltd. 相似文献
4.
We calculated a local inverse inelastic mean free path (local-IIMFP) for electrons crossing a medium–medium interface, considering various incident electron energies, crossing angles and combinations of materials. We used an extension of a classical dielectric model developed by Li and co-workers for an electron crossing a surface (interface vacuum-medium). Moreover, the integration over the distance of the local-IIMFP allows to obtain the interface excitation parameter (or IEP) characterizing the change in excitation probability for an electron crossing an interface once caused by the presence of the interface in comparison with an electron for which only volume excitations are considered. We perform these calculations for angles between 0° and 80°, for electron energies between 500 and 2500 eV and for various pairs of materials, as Al/In for its academic interest or Au/Si and SiO 2/Si for their technological importance. Small but not negligible variations of the local-IIMFP and the IEP were observed for metal–metal or metal–semiconductor interfaces, while quite significant variations are obtained when one of the materials is a insulator. 相似文献
5.
Previously, we developed a semi‐empirical method for determining the inelastic mean free paths of positrons in a wide variety of materials. This work is heavily based on the earlier work of Tanuma, Powell and Penn on the inelastic mean free paths of electrons in the 50–2000 eV energy range. One of the remaining questions still to be answered was the validity of ignoring terms of the order of the inverse energy squared in the denominator of our final expression. In this paper, we investigate this question in some detail by comparing our approximations with calculated values of the positron inelastic mean free paths based on experimental optical data. We conclude that the exclusion of the higher order terms is consistent with the other approximations in this methodology. Copyright © 2005 John Wiley & Sons, Ltd. 相似文献
6.
We report calculations of electron inelastic mean free paths (IMFPs) for 50–2000 eV electrons in 14 elemental solids (Li, Be, diamond, graphite, Na, K, Sc, Ge, In, Sn, Cs, Gd, Tb, and Dy) and for one solid (Al) using better optical data than in our previous work. The new IMFPs have also been used to test our TPP‐2M equation for estimating IMFPs in these materials. We found surprisingly large root‐mean‐square (RMS) deviations (39.3–71.8%) between IMFPs calculated from TPP‐2M and those calculated here from optical data for diamond, graphite and cesium; previously we had found an average RMS deviation of 10.2% for a group of 27 elemental solids. An analysis showed that the large deviations occurred for relatively small computed values of the parameter β in the TPP‐2M equation (β ~ 0.01 for diamond and graphite) and also for relatively large values of β (β ~ 0.25 for Cs). Although such extreme values of β are unlikely to be encountered for many other materials, the present results indicate an additional limitation in the reliability of the TPP‐2M equation. We also show that the parameter Nv in the TPP‐2M equation should be computed for the rare‐earth elements from the number of valence electrons and the six 5p electrons. Copyright © 2004 John Wiley & Sons, Ltd. 相似文献
8.
The inelastic mean free path and the stopping power of swift electrons in relevant biomaterials, such as liquid water, DNA, protein, lipid, carotene, sugar, and ice are calculated in the framework of the dielectric formalism. The Mermin Energy Loss Function – Generalized Oscillator Strength model is used to determine the energy loss function of these materials for arbitrary energy and momentum transfer using electron energy‐loss spectroscopy data as input. To ensure the consistency of the model, efforts are made so that both the Kramers–Kronig and f‐sum rules are fulfilled to better than 2%. Our findings indicate sizeable differences in the inelastic mean free path and stopping power among these biomaterials for low‐energy electrons. For example, at 100‐eV electron energy, the inelastic mean free path in protein is 25% smaller than for water and around 10% smaller than for the other biomaterials. The stopping power values of protein, DNA, and sugar are rather similar but 20% larger than for water. Taking into account these results, we conclude that electron interactions with living tissues at the nanometric scale cannot be reliably described using only liquid water as the surrogate of the biological target. Copyright © 2016 John Wiley & Sons, Ltd. 相似文献
9.
This paper reports on our study of the formation of an interface of layered structures in the Fe-Si system by reflected electron energy loss spectroscopy (REELS). Quantitative element analysis was performed using the product of the mean length of the inelastic free path by the inelastic scattering cross-section of electrons. It is shown that the Fe-Si interface is quite uniform. 相似文献
10.
The most established approach for ‘practical’ calculations of the inelastic mean free path (IMFP) of low‐energy electrons (~10 eV to ~10 keV) is based on optical‐data models of the dielectric function. Despite nearly four decades of efforts, the IMFP of low‐energy electrons is often not known with the desired accuracy. A universal conclusion is that the predictions of the most popular models are in rather fair agreement above a few hundred electron volts but exhibit considerable differences at lower energies. However, this is the energy range where their two main approximations, namely, the random‐phase approximation (RPA) and the Born approximation, may be invalid. After a short overview of the most popular optical‐data models, we present an approach to include exchange and correlation (XC) effects in IMFP calculations, thus going beyond the RPA and Born approximation. The key element is the so‐called many‐body local‐field correction (LFC). XC effects among the screening electrons are included using a time‐dependent local‐density approximation for the LFC. Additional XC effects related to the incident and struck electrons are included through the vertex correction calculated using a screened‐Hubbard formula for the LFC. The results presented for liquid water reveal that XC may increase the IMFP by 15–45% from its Born–RPA value, yielding much better agreement with available experimental data. The present work provides a manageable, yet rigorous, approach to improve upon the standard models for IMFP calculations, through the inclusion of XC effects at both the level of screening and the level of interaction. Copyright © 2015 John Wiley & Sons, Ltd. 相似文献
12.
Measurements of probability of elastic electron backscattering from surfaces can provide information on physical properties of the surface region with thickness comparable to the inelastic mean free path (IMFP) of electrons. The analytical technique, based on such measurements, is known as elastic peak electron spectroscopy (EPES). The most frequent application of EPES is the determination of the IMFP in solids. However, this technique can also be used to measure overlayer thickness, or to determine surface composition. Quantitative applications of EPES, addressed here, require a reliable theoretical model describing the elastic backscattering probability from surfaces with a given structure and composition. Unfortunately, there is no simple analytical model which describes the elastic backscattering probability with an acceptable accuracy. Values of the elastic backscattering probability are usually estimated from Monte Carlo (MC) simulations of elastic backscattering events, since the theoretical model implemented in the MC scheme seems closest to reality, as compared with models leading to different analytical expressions. It is shown that the reliability of the theory is associated with accuracy of the parameters needed in the calculations. The most important parameters are the differential elastic scattering cross-sections which are presently known, especially in some angular regions, with limited accuracy. The IMFP values, determined in different laboratories via EPES, exhibit a considerable scatter, which may be due to the fact that different experimental geometries are used in measurements. Other sources of errors are briefly discussed. 相似文献
14.
Inelastic mean free paths (IMFPs) of electrons with energies between 100eV and 5,000eV have been frequently obtained from measurements of elastic-backscattering probabilities for different specimen materials. A calculation of these probabilities is also required to determine IMFPs. We report calculations of elastic-backscattering probabilities for gold at energies of 100eV and 500eV with differential elastic-scattering cross sections obtained from the Thomas-Fermi-Dirac potential and the more reliable Dirac-Hartree-Fock potential. For two representative experimental configurations, the average deviation between IMFPs obtained with cross sections from the two potentials was 11.4%. 相似文献
15.
磺化酞菁铜多层膜体系是利用Langmuir-Blodgett技术制备的有序有机分子膜,它对于XPS测试有很好的稳定性,本文在固定电子出射角的条件下利用XPS方法研究了不同厚度的膜样品中Cu_((2(?))_(3/2))、Ni_(1(?))、S_(2p)峰强度的变化规律,讨论了膜内分子有序排列引起的散射效应对电子平均自由程的影响。 相似文献
16.
The characterization of buried interfaces is difficult and often has to be performed by a post‐processing method where the interface is exposed. Hard energy X‐ray photoelectron spectroscopy offers the ability to tune the X‐ray energy and thereby change the information depth. In this work, an inorganic/organic interface was evaluated, namely the poly(3‐hexylthiophene) (P3HT) interface with indium tin oxide (ITO), with relevance to organic photovoltaic devices. P3HT/ITO buried interfaces were examined using three X‐ray energies where the ITO surface was prepared under different pretreatment conditions. The P3HT film protected the ITO surface from adventitious adsorbents and allowed for sensitivity to the buried ITO surface. Robust peak fitting parameters were obtained to model the O 1 s and In 3d lineshapes. The deconvolution of these lineshapes allowed for the clear identification of a surface layer on the ITO which is oxidized to a greater extent than the underlying bulk ITO. The surface oxide layer, composed of indium oxide and indium hydroxide, is deficient of oxygen vacancies and would therefore be expected to act as an insulating barrier on the ITO surface. Peak fitting conditions allowed for an estimation of the relative thicknesses of this insulating layer. Copyright © 2012 John Wiley & Sons, Ltd. 相似文献
18.
We report changes in electron effective attenuation lengths (EALs) resulting from use of transport mean free paths (TMFPs) obtained from the Dirac–Hartree–Fock (DHF) potential instead of the Thomas–Fermi–Dirac (TFD) potential in an algorithm used in the National Institute of Standards and Technology (NIST) Electron Effective‐Attenuation‐Length Database (SRD 82). TMFPs from the former potential are believed to be more reliable than those obtained from the latter potential. We investigated changes in the EALs for selected photoelectron and Auger‐electron lines in four elemental solids (Si, Cu, Ag, and W), for Si 2p photoelectrons of varying energy in SiO 2, and for photoelectrons excited by Al Kα X rays in four candidate gate‐dielectric materials (HfO 2, ZrO 2, HfSiO 4, and ZrSiO 4). For each material, we computed the change in the average EAL for a range of overlayer‐film thicknesses from zero to a maximum value corresponding to attenuation of the substrate signal to 10% of its original value. This EAL change was a maximum for electrons emitted normally from the surface and decreased monotonically with increasing emission angle. The maximum EAL change varied between ?4.4% and 2.6% for the three groups of materials. We found that the maximum EAL change correlated mainly with the TMFP change. We found that TMFP changes in other solids could generally lead to maximum EAL changes between ?2.6% and 1.9% for electron energies between 500 and 2000 eV. For lower energies, the maximum EAL changes could be larger for some solids. Our revised EALs for Si 2p photoelectrons in SiO 2 excited by Mg and Al Kα X rays agree within 0.5% with values reported by Seah and Spencer from a detailed analysis of SiO 2 film‐thickness measurements by XPS and other techniques. Copyright © 2006 John Wiley & Sons, Ltd. 相似文献
19.
Most real core-shell nanoparticle (CSNP) samples deviate from an ideal core-shell structure potentially having significant impact on the particle properties. An ideal structure displays a spherical core fully encapsulated by a shell of homogeneous thickness, and all particles in the sample exhibit the same shell thickness. Therefore, analytical techniques are required that can identify and characterize such deviations. This study demonstrates that by analysis of the inelastic background in X-ray photoelectron spectroscopy (XPS) survey spectra, the following types of deviations can be identified and quantified: the nonuniformity of the shell thickness within a nanoparticle sample and the incomplete encapsulation of the cores by the shell material. Furthermore, CSNP shell thicknesses and relative coverages can be obtained. These results allow for a quick and straightforward comparison between several batches of a specific CSNP, different coating approaches, and so forth. The presented XPS methodology requires a submonolayer distribution of CSNPs on a substrate. Poly(tetrafluoroethylene)-poly(methyl methacrylate) and poly(tetrafluoroethylene)-polystyrene polymer CSNPs serve as model systems to demonstrate the applicability of the approach. 相似文献
20.
An analysis is presented for a simple, universal equation for the computation of attenuation lengths ( L) for any material, necessary for quantifying layer thicknesses in Auger electron spectroscopy (AES) and X‐ray photoelectron spectroscopy (XPS). Attenuation lengths for selected materials may be computed from the inelastic mean free path ( λOpt) computed, in turn, from optical data. The computation of L involves the transport mean free path and gives good L values where values of λOpt are available. However, λOpt values are not available for all materials. Instead, λ may be calculated from the TPP‐2M relation, but this requires the accurate estimation of a number of materials parameters that vary over a wide range. Although these procedures are all soundly based, they are impractical in many analytical situations. L is therefore simply reexpressed, here, in terms of the average Z of the layer which may be deduced from the AES or XPS analysis, the average atomic size a (varies in a small range) and the kinetic energy E of the emitted electron. For strongly bonded materials, such as oxides and alkali halides, a small extra term is included for the heat of formation. A new equation, S3, is established with a root mean square (RMS) deviation of 8% compared with the values of attenuation length calculated from λOpt available for elements, inorganic compounds, and organic compounds. This excellent result is suitable for practical analysis. In many films, an average value of a of 0.25 nm is appropriate, and then L may be expressed only in terms of the average Z and E. Then, L expressed in monolayers, equation S4, exhibits an RMS deviation of 9% for many elements. These results are valid for the energy range 100 to 30 000 eV and for angles of emission up to 65°. Copyright © 2012 Crown copyright. 相似文献
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