Nitrogen and Silicon Co-Doping of Ge2Sb2Te5 Thin Films for Improving Phase Change Memory Performance

Electrical properties and phase structures of （Si＋N）-codoped Oe2Sb2Te5 （GST） for phase change memory are investigated to improve the memory performance. Compared to the films with N or Si dopants only in previous reports, the （Si＋N）-doped GST has a remarkable improvement of crystalline resistivity of about 104mΩcm. The Fourier-transform infrared spectroscopy spectrum reveals the Si-N bonds formation in the film. X-ray diffraction patterns show that the grain size is reduced due to the crystallization inhibition of the amorphous GST by SiNx, which results in higher crystalline resistivity. This is very useful to reduce writing current for phase change memory applications.     

Phase coexistence in annealed CaMn7O12

The structural phase transition in annealed CaMn₇O₁₂ has been investigated by using high resolution synchrotron radiation powder diffraction. There is a phase coexistence phenomenon: two different crystallographic phases coexist in the material between 410 and 458 K. The first one is trigonal and it has a charge ordering (CO) of the Mn³⁺ and Mn⁴⁺ ions, while the second one is cubic and charge delocalized (CD). The volume fraction of the CD phase increases with temperature from 22% at 418 K up to 100% at 468 K. Both phases have domains of at least 150 nm at each temperature. The annealing of CaMn₇O₁₂ relaxed a part of the strains in the lattice, but did not influence the phase coexistence phenomenon.     

LiAl5O8高压相变研究

 运用金刚石压砧同步辐射X射线衍射,对尖晶石结构的LiAl₅O₈进行了高压原位研究。实验发现：在高压下,一组LiAl₅O₈的新相衍射峰出现,随着压力的增加,其新相衍射峰逐渐增强,当压力增加到45.0 GPa时,LiAl₅O₈的低压相衍射峰全部消失,而形成了一组高压新相衍射峰。采用指标化程序对衍射数据进行处理和分析,确定这一高压新相为正交晶系结构,其晶胞参数为a=0.995 9 nm,b=0.644 7 nm,c=0.333 4 nm ,空间群为Pmm2。     

Phase relations in the ZnO-V2O5-K2O system

The subsolidus phase relations of a ZnO-V 2 O 5-K 2 O system are investigated by X-ray powder diffraction.There is 1 ternary compound,11 binary compounds and 14 three-phase regions in this system.The phase diagrams of V 2 O 5 K 2 O with the K 2 O content ranging from 0 to 71 mol% and pseudo-binary system of ZnO-K 2 ZnV 2 O 7 are also studied by X-ray powder diffraction and differential thermal analysis methods.     

Phase coexistence in NaZn13-type LaFe11.4Al1.6C0.02 compound

In NaZn₁₃-type LaFe_11.4Al_1.6C_0.02 compound, a signature of weak ferromagnetism is observed at ∼100 K under a low field by ac magnetic-susceptibility and electrical-resistivity measurements, implying the coexistence of ferromagnetic (FM) and antiferromagnetic (AFM) phases. The hysteresis in isofield magnetization curves and large magnetic relaxation demonstrate the metastability of the magnetic state in the AFM-FM transition region. The variations of magnetization with temperature, time and field show distinct step-like behaviors, which is probably attributed to the discontinuous growth of ferromagnetic cluster in antiferromagnetic matrix.     

Phase transitions in NbSe3

We describe the physical properties of the transition metal trichalcogenide NbSe₃ including electrical resistivity, magnetic susceptibility, and heat capacity. NbSe₃ undergoes phase transitions at 145 and 59 K. The effect of pressure on these transitions is also reported. We try to explain the physical properties of NbSe₃ in terms of the formation of charge density waves.     

ZnSb掺杂的Ge2Sb2Te5薄膜的相变性能研究

本文采用双靶(ZnSb靶和Ge₂Sb₂Te₅靶)共溅射制备了系列ZnSb掺杂的Ge₂Sb₂Te₅(GST)薄膜. 利用X射线衍射、透射电子显微镜、原位等温/变温电阻测量、X射线光电子能谱等测试研究了薄膜样品的非晶形态、电学及原子成键特性. 利用等温原位电阻测试表明ZnSb掺杂的Ge₂Sb₂Te₅薄膜具有更高的结晶温度. 采用Arrhenius 公式计算发现ZnSb掺杂的Ge₂Sb₂Te₅薄膜的十年数据保持温度均高于传统的Ge₂Sb₂Te₅薄膜的88.9℃. 薄膜在200, 250, 300和350℃ 下退火后的X射线衍射图谱表明ZnSb的掺杂抑制了Ge₂Sb₂Te₅薄膜从fcc态到hex态的转变. 通过对薄膜的光电子能谱和透射电镜分析可知Zn, Sb, Te原子之间键进行重组, 形成Zn–Sb 和Zn–Te 键, 且构成非晶物质存在于晶体周围. 采用相变静态检测仪测试样品的相变行为发现ZnSb掺杂的Ge₂Sb₂Te₅薄膜具有更快的结晶速度. 特别是(ZnSb)_24.3(Ge₂Sb₂Te₅)_75.7薄膜, 其结晶温度达到250℃, 十年数据保持温度达到130.1℃, 并且在70 mW激光脉冲功率下晶化时间仅～64 ns, 远快于传统Ge₂Sb₂Te₅薄膜的晶化时间～280 ns. 以上结果表明(ZnSb)_24.3(Ge₂Sb₂Te₅)_75.7薄膜是一种热稳定性好且结晶速度快的相变存储材料.     

Phase transition in (NH4)3FeF6

By use of Mössbauer spectroscopy we have found that the transition from tetragonal to cubic structure in (NH₄)₃FeF₆ takes place at 263 K. The phase transition exhibits a hysteresis of 0.5 K. The experimental data indicate that the tetragonal deformation found at low temperatures diminishes gradually as the transition temperature is approached. The spectra are influenced by electronic relaxation.     

Phase transitions in RbCoCl3 · 2H2O

Differential susceptibility measurements were performed on a single crystal of RbCoCl₃ · 2H₂O. An anti-ferromagnetic ordering was found at 2.975 K.     

Phase transitions in ferroelectric ceramics of the type Sr0.5Ba0.5Nb2O6

The ferro-paraelectric transition in Sr_0.5Ba_0.5Nb₂O₆ ceramics has been studied by measuring the dielectric pennitivity as a function of temperature at different frequencies. Experimental results in the transition region over ?'_max fit the relation $\text{1}\text{?'}\text{?}\text{1}\text{?'}{}_{\max }\text{= A(T ?}\text{T}{}_0\text{)}{}^{\mathrm{\gamma }}$ with γ > 1, as is typical for dif transitions. In an interval of temperatures of 17°C over T₀ (=Tfor?'_max), γ = 2. Using the relaxors' model of Kirillov-Isupov an equation is inferred in order to compute the activation energy of the relaxors as a function of parameters directly obtained from the experimental results.     

Phase diagrams of CuCl2·2NC5H5 and CsCuCl3

The phase diagrams of two quasi one-dimensional,$\text{S =}\text{1}\text{2}$ quantum systems CuCl₂·2NC₅H₅ and CsCuCl₃, have been determined experimentally for fields between 0 and 90 kOe. The results show an increase of the Néel temperature as a function of the field, in accordance with earlier observations on manganese systems.     

Transition of Bery Phase and Pancharatnam Phase and Phase Change

Berry Phase and time-dependent Pancharatnam phase are investigated for nuclear spin polarization in a liquid by a rotation magnetic field, where two-state mixture effect is exactly included in the geometric phases. We find that when the system of nuclear spin polarization is in the unpolarized state, the transitive phenomena of both Berry phase and Pancharatnam phase are taken place. For the polarized system, in contrast, such a transition is not taken place. It is obvious that the transitions of geometric phase correspond to the phase change of physical system.     

Phase stability and electronic structure of Si2Sb2Te5 phase-change material

On the basis of an ab initio computational study, the present work provide a full understanding on the atomic arrangements, phase stability as well as electronic structure of Si₂Sb₂Te₅, a newly synthesized phase-change material. The results show that Si₂Sb₂Te₅ tends to decompose into Si₁Sb₂Te₄ or Si₁Sb₄Te₇ or Sb₂Te₃, therefore, a nano-composite containing Si₁Sb₂Te₄, Si₁Sb₄Te₇ and Sb₂Te₃ may be self-generated from Si₂Sb₂Te₅. Hence Si₂Sb₂Te₅ based nano-composite is the real structure when Si₂Sb₂Te₅ is used in electronic memory applications. The present results agree well with the recent experimental work.     

相分离La0.33Pr0.34Ca0.33MnO3薄膜体系中的交换偏置效应

在相分离La_0.33Pr_0.34Ca_0.33MnO₃薄膜体系中发现了大的交换偏置效应．在4 K时,交换偏置场的大小达到了约1 kOe．交换偏置效应可能源自薄膜内禀的电子相分离特性或薄膜的表面效应．交换偏置效应表现出强的温度、冷却磁场以及厚度依赖的关系．     

Phase transition in Pd40Ni10Cu30P20 bulk metallic glass under HP & HT

The phase transitions in Pd₄₀Ni₁₀Cu₃₀P₂₀ bulk metallic glass (BMG) have been studied under high pressure and high temperature (HP & HT) by X-ray diffaction measurements with synchrotron radiation source. We found that the BMG underwent a phase transitions of amorphous-crystalline-amorphous at 10 GPa upon heating. The parallel experiments were carried out at 7 GPa, while we did not observe the amorphous-crystalline-amorphous transitions by increasing temperature. Quenching the melted BMG at 7 GPa, it was found that the phase crystallized from the melt differed from the primary phase crystallized from the starting amorphous solid upon heating suggesting there existed a distinct mechanism in two cases.     

Phase transition in Cd2Ta2O7 and the Cd2Nb2−xTaxO7 series

A phase transition has been discovered in Cd₂Ta₂O₇ near 200 K which is about the same temperature at which Cd₂Nb₂O₇ is known to become ferroelectric. However, Cd₂Ta₂O₇ does not become ferroelectric below this transition. The nature of this transition was also studied in the Cd₂Nb_2?xTa_xO₇ series using low temperature X-ray, SHG, and DSC techniques.     

Phase separation with charge self-organization in the Tb0.95Bi0.05MnO3, Gd0.75Ce0.25Mn2O5, and Eu0.8Ce0.2Mn2O5 manganite multiferroics

New doped manganite multiferroics Tb_0.95Bi_0.05MnO₃, Gd_0.75Ce_0.25Mn₂O₅, and Eu_0.8Ce_0.2Mn₂O₅, which are semiconductors, have been grown and studied. The starting dielectric multiferroics TbMnO₃ and RMn₂O₅ (R = Gd and Eu) have close magnetic and ferroelectric ordering temperatures of 30–40 K. The crystals studied are multiferroics in which states with giant permittivity and ferromagnetism coexist at room temperature. An analysis of the dielectric properties suggests that, at temperatures T ≥ 180 K, these crystals undergo a phase separation involving dynamic periodic alternation of quasi-2D layers of mixed-valence manganese ions, a process accounting for the onset of charge-induced ferroelectricity. At low temperatures (T < 100 K), a small phase volume in the crystals is occupied by as-grown quasi-2D layers containing dopants and carriers. Most of the crystal volume is occupied by the carrier-free dielectric phase. Thermally activated hopping conduction involving carrier self-organization in the crystal matrix with ferroelectric frustrations drives a phase transition to the state of charge-induced ferroelectricity at T ∼ 180 K. Original Russian Text ? V.A. Sanina, E.I. Golovenchits, V.G. Zalesskiĭ, 2008, published in Fizika Tverdogo Tela, 2008, Vol. 50, No. 5, pp. 874–882.     

Phase evolution and microwave dielectric properties of Bi3SbO7 ceramic

The Bi₃SbO₇ ceramic was prepared by the solid state reaction method and its phase evolution at different temperatures was studied. Low temperature phase α-Bi₃SbO₇ was formed at about 890 °C and it started to transform to high temperature phase β-Bi₃SbO₇ at about 960 °C. Microwave dielectric constants of α-Bi₃SbO₇ ceramic and β-Bi₃SbO₇ ceramic were 43.2 and 37.6, Qf value were 2080 and 5080 GHz, respectively. TCF of α-Bi₃SbO₇ ceramic was near zero and TCF of β-Bi₃SbO₇ ceramic was about −120 ppm/°C. The Bi₃SbO₇ ceramic is a promising candidate for low temperature co-fired ceramic (LTCC) technology due to its large dielectric constant, low dielectric loss at microwave region, low sintering temperature and simple composition.