退火与极化温度对尼龙11薄膜驻极体内陷阱能级分布的影响

用热释电技术研究了尼龙11薄膜驻极体制备过程中热处理与极化温度对驻极体陷阱能级分布的影响.结果显示，淬火驻极体的热释电流谱上存在四个空间电荷退陷阱电流峰，而在退火处理后则显示两个退陷阱电流峰.采用多点法对热释电流谱进行理论拟合可以将各个退陷阱电流峰分离并得到它们的陷阱深度参数.这些参数进一步表明，淬火尼龙11薄膜驻极体内存在四个空间电荷的陷阱能级，极化温度升高对它们的分布情况影响不大；退火处理后，陷阱能级减少为两个，且随着极化温度的升高，较浅的陷阱能级有明显向较深陷阱能级接近的趋势. 关键词： 尼龙11 薄膜驻极体 热释电 热处理     

Effect of Polarization Temperature on the Chain Segment Motion and Space Charge Detrapping in Polyamide 610 Film Electrets

The effect of polarization temperature on the chain segment motion and charge trapping and detrapping in polyamide 610 films has been investigated by means of thermally stimulated depolarization current (TSDC) and wide-angle X-ray diffraction (WAXD). A small part of the amorphous phase of quenched polyamide 610 changes into the crystalline state with increasing polarization temperature. There are three current peaks (named α, ρ₁, and ρ₂ peak, respectively) in the TSDC spectra. The α peak corresponds to the glass transition, the ρ ₁ peak is attributed to space charge trapped in the amorphous phase, and interphase between crystalline and amorphous phases, and the ρ ₂ peak originates from space charge trapped in the crystalline phase. By analyzing the characteristic parameters of these peaks, it was found that the increase of polarization temperature induced a decrease of the chain segment mobility and promoted the creation of structural traps in polyamide 610. The decrease of the chain segment mobility in the amorphous phase made the intensity of the α peak weak and the activation energy increased. The higher the polarization temperature, the higher the degree of crystallinity and the more charge carriers trapped in the crystalline phase. So, the increase of polarization temperature made the intensity of the ρ ₂ peak strong and increased the stability of trapped charge in the crystalline phase. The increase of polarization temperature also made the intensity of the ρ ₁ peak strong and decreased the stability of trapped charge in the amorphous phase and interphase.     

Annealing Effect on Chain Segment Motion and Charge Trapping and Detrapping in Nylon 1010

The chain segment motion and charge trapping and detrapping in nylon 1010 films were investigated by means of thermally stimulated depolarization current (TSDC). There were three current peaks (named α, ρ1, and ρ2 peaks, respectively) in the experimental TSDC spectra above room temperature. The α peak is attributed to a background dipole relaxation by the motion of chain segments and space charge contribution, the ρ1 peak is originated from a space charge trapped in the bulk amorphous regions and the interphase between crystalline and amorphous regions, the ρ2 peak is originated from space charge trapped in crystalline regions. By analyzing the characteristic parameters of these peaks, it was found that with in increase of the degree of crystallinity the activation energy of the a peak increased from 1.12 to 1.22 eV and the trap depth of the ρ2 peak increased from 2.70 to 2.82 eV, while the trap depth of the ρ1 peak decreased from 1.50 to 1.29 eV. Annealing induced a decrease of the chain segment mobility and promoted the creation of traps in nylon 1010. Annealing also decreased the stability of the trapped charges in the bulk amorphous and the interphase regions and increased the stability of the trapped charges in the crystalline regions.     

电晕充电多孔PTFE/PP复合驻极体过滤材料的电荷存储特性

报道采用电晕充电方法，对用高温熔融粘合工艺制备得到的双向拉伸多孔PTFE与PP复合过滤材料进行驻极体改性，并采用热刺激放电和表面电位测量等方法研究了材料的电荷存储稳定性,根据驻极体相关理论，对实验结果进行了解释. 结果表明，电晕充电的多孔PTFE/熔喷或纺粘PP覆膜材料中，既存在空间电荷又存在极化电荷，复合膜的界面是电荷陷阱的主要来源. 从不同面对复合膜材料进行充电时，材料具有完全不同的电荷存储特性. 由于材料体内空间电荷和极化电荷的极性相反、相互补偿，表面电位测定并不能真正反映材料内部电荷的存储状态. 关键词： 驻极体 电晕充电 聚合物复合膜 热刺激放电     

厚度对非极性聚合物薄膜驻极体电荷储存及电荷动态特性的影响

以Du Pont公司的商用Teflon FEP A型薄膜为例，通过热脉冲技术、等温表面电位衰减测量和开路热刺激放电电流谱分析等实验结果，讨论了经常温和高温电晕充电后样品厚度对薄膜驻极体的沉积电荷密度、薄膜驻极体的内电场、体电导率以及电荷储存稳定性的影响.通过热脉冲技术组合电导率温度曲线的测量，研究了在不同温度条件下样品厚度对沉积电荷层的平均电荷重心移动的影响.结果表明：在充电参数一定的条件下，随着膜厚的降低，储存电荷密度上升，但电荷稳定性有所下降.因此，合理地调控薄膜厚度，可以有效地优化驻极体的电荷储存能 关键词： 厚度 驻极体 电荷储存能力 电荷稳定性     

The density and pressure of helium in bubbles in metals

Abstract

The energy shift of the He 1¹S₀?2¹P₁ transition, ΔE(n), can be used to determine the density, n, of He in bubbles in metals. A self-consistent band structure calculation for solid fcc He yields a linear relationship ΔE=C.n with C _th=22 × 10^?3 eV nm³. Systematic electron energy loss spectroscopy and transmission electron microscopy studies of He bubbles in Al for various He doses and temperatures result in C_exp=(24±8).10^?3 eV nm³ in agreement with theory. The analysis is consistent with the assumption that dislocation loop punching is the dominant bubble growth mechanism during high-dose room temperature implantation. The application to He bubbles in Ni indicates a maximum He density of n=0.2 × 10³ nm^?3 for which He should be solid at room temperature.     

Effect of ammonia treatment on laser-induced damage of nano-porous silica film

The sol-gel monolayer silica films on K9 glass substrates were prepared with the dip method, and then treated in saturated ammonia gas. The laser-induced damage threshold (LIDT) of silica films with and without ammonia treatment was measured. Properties of the films were analyzed by using Stanford photo-thermal solutions (SPTS), ellipsometry, atomic force microscopy (AFM), and optical microscopy to study the effect of ammonia treatment on laser-induced damage of sol-gel monolayer silica film under laser irradiation. The experimental results showed that compared with the as-grown silica film, the silica film with ammonia treatment had larger absorption and smaller porous ratio, and it had smaller LIDT. Considering the improved abrasion resistance of films with ammonia treatment, a trade-off is always needed between abrasion resistance and LIDT in practice.     

Investigation of Pendant Group and Chain Segment Motions in P(MMA/BA) Copolymers by Thermally Stimulated Depolarization Current

Poly(methyl methacrylate/butyl acrylate) [P(MMA/BA)] copolymers (M_η ～2×10⁵) with different mass percentages of MMA were synthesized by the method of solution polymerization. Thermally stimulated depolarization current (TSDC) technique was used to investigate the effect of copolymerization on pendant group and chain segment motions. Three TSDC peaks were observed over the temperature range from 310 to 400 K. The highest temperature, ρ peak originates from the detrapping of trapped charge carriers. The lower temperature, α peak corresponds to the glass transition. The activation energy of the α relaxation decreases from 1.2 eV for PMMA to 0.98 eV for MMA(75)/BA(25). In the fitting process, another peak, β′, is separated on the low temperature side. The apparent energy barrier of the β′ for PMMA is 0.80 eV. The β′ relaxation is thought to correspond to the motion of pendant groups including intra‐ and inter‐molecular interactions. All three peaks move to lower temperatures with an increase in BA component, and the activation energy for the α and β′ relaxations also decreases with the increase of BA component in copolymers, indicating that the flexible side groups of BA have an effect of plasticization on the glass transition and motion of pendent groups. The temperatures of the α and β′ peaks of P(MMA/BA) copolymers follow the Fox equation. Fitting results gives the α peak at 238 K and β′ peak at 225 K for polybutyl acrylate (PBA).     

影响激光加热运动圆柱体的加热线型的分析

 采用几何分析的方法研究激光加热运动圆柱体的过程，在说明加热线型的概念和意义后，讨论了在地平面上各点处所具有的加热线型的时间宽度，从而指出，为了激光有效加热运动圆柱体，激光器应当怎样在地平面上放置的原则。即根据激光器有效工作时间与圆柱体抛射时间的比例关系选择一定的相对时间宽度等值线，以此等值线为界在地平面上划出一有效区域，并从中选取距离轨道最近的点作为激光器的放置点。当考虑大气对激光的衰减作用时，激光以小于一定入射角阈值进行动态加热的总能量将出现极大值，在此处放置激光器最有利于动态加热。     

充电栅压对聚四氟乙烯多孔膜驻极体储电能力的影响

利用室温下栅控恒压电晕充电、热脉冲技术、开路热刺激放电电流谱以及对在充电过程中通过样品电流的监测等方法，系统地研究了充电栅压对具有开放性孔洞结构的聚四氟乙烯（PTFE）多孔膜储电能力的影响，并讨论了导致这类影响的电荷动力学特性和材料的微结构根源 .结果显示，过高的充电栅压会导致沉积电荷密度下降和电荷衰减加剧，不利于这类新结构 功能材料压电活性的提高及其热稳定性的改善.合理的优化充电条件能使负极性充电PTFE多 孔膜驻极体在有机聚合物材料中显示优异的储电能力及电荷稳定性，并改善其作为双极性空 间电荷型压电传 关键词： 聚四氟乙烯 驻极体 储电能力 多孔膜     

VDF/TrFE共混物晶区相容性的热释电流研究

采用热释电流 (TSDC)技术 ,结合差热分析和X射线衍射方法 ,对由共聚物VDF(5 6) /TrFE(4 4)和VDF(77) /TrFE(2 3 )共混形成的不同摩尔比的VDF/TrFE共混物进行了研究 .发现共混物显示二个居里转变温度 ,其结晶区域由二个共聚物组分的晶区构成 ,体现出共混物中二共聚物组分的晶区是不相容的 .不同极化温度的热处理共混物的TSDC结果还证明 ,空间电荷对剩余极化有一定的稳定作用 .     

Formation of graphene on amorphous SiC film by surface-confined heating with electron beam irradiation

It is demonstrated experimentally that graphene can form on the surface of an amorphous SiC film by irradiating electron beam (e-beam) at low acceleration voltage. As the electron irradiation fluency increases, the crystallinity and uniformity of graphene improve, which is confirmed by the changes of the measured Raman spectra and secondary electron microscopy images. Due to the shallow penetration depth of e-beam with low acceleration voltage, only the region near the surface of SiC film will be heated by the thermalization of irradiated electrons with multiple scattering processes. The thermalized electrons are expected to weaken the bond strength between Si and C atoms so that the thermal agitation required for triggering the sublimation of Si atoms decreases. With these assistances of irradiated electrons, it is considered that graphene can grow on the surface of SiC film at temperature reduced substantially in comparison with the conventional vacuum annealing process.     

Charge storage and relaxation process of polymer film by thermally stimulated discharge current technique

Charge storage and relaxation process of the polymide film electret were investigated using the thermally stimulated discharge current technique. Homo- and heterocharges were mainly observed up to and above the polarization temperature.     

Determination of trapping parameters in n-Ga4Se3S by thermally stimulated current measurements

Thermally stimulated current (TSC) measurements were carried out on as-grown n-Ga₄Se₃S layered crystals in the temperature range 10–300 K. The experimental data were analysed by using different heating rates, initial rise, curve fitting and isothermal decay methods. The results of the analysis showed good agreement with each other. The measurements revealed the presence of one trapping level with activation energy of 23 meV. The corresponding capture cross-section and concentration of traps were found to be 2.2 × 10^?23 cm² and 2.9 × 10¹¹ cm^?3, respectively. TSC experiments showed the presence of an exponential distribution of electron-trapping states in Ga₄Se₃S crystal. The variation of one order of magnitude in the trap density for every 34 meV was obtained.     

Statistical analyses of repolarisation current of a PZT film deposited on ITO electrode with different thermal treatments

In the vast application fields of lead zirconate titanate (PZT) thin films, of particular interest are the interaction effects occurring at the ferroelectric–substrate interface [E. Bruno, M.P. De Santo, M. Castriota, S. Marino, G. Strangi, E. Cazzanelli and N. Scaramuzza, J. Appl. Phys. 103 (2008) p.064103; S. Dunn and R.W. Whatmore, J. Eur. Ceram. Soc. 22 (2002) p.825]. Relevant for this purpose are polarity-sensitive liquid crystals (LC) cells and micro- and nanoelectronic applications [S. Marino, M. Castriota, G. Strangi, E. Cazzanelli and N. Scaramuzza, J. Appl. Phys. 102, selected for Virtual Journal of Nanoscale Science & Technology, 30 July 2007 (2007) p.013002]. The polarisation current was investigated of a PZT film (PbZr_0.47Ti_0.53O₃) obtained by sol–gel synthesis and deposited by spin coating on an indium tin oxide (ITO) electrode. The different behaviour exhibited by such a system when the support electrode was previously submitted to a thermal treatment was attributed to the change of the electrical properties of the ITO layer. In particular, a higher negative charge in the conductive band of the ITO electrode seems to be responsible for a higher order in the ferroelectric film.     

电容器薄膜等离子体表面改性实验研究

建立了一套辉光放电等离子体对电容器薄膜进行表面处理的装置。采用N2,O2及Ar三种气体对聚丙烯、聚酯和聚苯硫醚膜进行了表面处理。红外光谱分析表明:薄膜表面的生成物与薄膜种类、气体种类和处理强度密切相关。场扫描电镜显示了薄膜表面的刻蚀现象明显。处理过的薄膜,非晶相被去除,球晶暴露。能谱分析说明了薄膜中C元素下降,N,O元素增加,但总体改变量很小。处理前后薄膜的直流击穿电压没有明显改变,但刻蚀过程造成的薄膜表面粗化可帮助电容器的浸渍过程更充分,从而可提高电容器的使用场强与储能密度。     

压力膨化处理对正极性聚丙烯蜂窝膜的驻极体性质的影响

压力膨化处理工艺能够显著改善聚丙烯蜂窝薄膜（cellular polypropylene） 驻极体的压 电活性.通过热脉冲技术、表面电位衰减测量及TSD 电流谱分析等研究了经恒压正电晕充电 的聚丙烯蜂窝膜的陷阱能级分布特征，讨论了压力膨化处理工艺对这类蜂窝膜驻极体电荷稳 定性及电荷输运特性的影响.结果说明，PP 蜂窝膜内存在着位于中能级区的能值各异的三种 分立陷阱，深能值陷阱和浅能值陷阱的大多数位于孔洞膜近表面的体层或体内，而中等能值 陷阱则主要位于自由面附近.压力膨化处理改变了PP 蜂窝膜的能阱状态并在一定程度上降低 了这类孔洞膜驻极体的电荷储存稳定性，但没有明显影响其由慢再俘获效应占主导地位的脱 阱电荷输运特性. 关键词： 压力膨化处理 聚丙烯蜂窝膜 驻极体 电荷储存与陷阱分布 电荷输运     

激光器与轨道的相对位置对动态加热的影响

通过分析光束入射的角度因子将激光器在地平面上的安放位置进行分类,采用了几何分析和数值模拟的方法,探讨了聚焦激光束在加热运动圆柱体过程中,为了达到一定的加热功率水平和能量水平以取得最好的加热效果而应采取的措施,即应当以激光垂直入射的轨道点为中心,以激光的有效工作时间为取值范围,并参考大气对激光能量的衰减,相对于轨道选取适当的距离进行加热。该研究从理论上说明了激光器与圆柱体运动轨道的相对位置对激光动态加热的影响可以看作一个优化问题,存在最优解,进而对于合理使用激光器进行动态加热具有参考价值。     

激光器与轨道的相对位置对动态加热的影响

 通过分析光束入射的角度因子将激光器在地平面上的安放位置进行分类,采用了几何分析和数值模拟的方法,探讨了聚焦激光束在加热运动圆柱体过程中,为了达到一定的加热功率水平和能量水平以取得最好的加热效果而应采取的措施,即应当以激光垂直入射的轨道点为中心,以激光的有效工作时间为取值范围,并参考大气对激光能量的衰减,相对于轨道选取适当的距离进行加热。该研究从理论上说明了激光器与圆柱体运动轨道的相对位置对激光动态加热的影响可以看作一个优化问题,存在最优解,进而对于合理使用激光器进行动态加热具有参考价值。     

圆筒电极对离子磁电加热的影响

高效的磁电加热不仅能够提高电子回旋共振(ECR)等离子体的离子温度,还能改善离子的径向和轴向分布,促进ECR等离子体在化学气相沉积金刚石膜刻蚀中的应用.将磁电加热系统中的圆环电极改进为圆筒电极,研究了圆筒电极对离子磁电加热的影响,对比了圆筒和圆环电极加热离子的区别.结果表明:在同一阳极偏压下,圆筒比圆环电极更有利于提高离子温度,圆筒电极加热时各径向位置的离子温度升高的幅度较大,其中圆筒电极内部的离子温度径向分布差异较大,而圆筒下游的离子温度径向分布比较均匀;磁电加热对离子密度的影响很小;采用圆筒电极加热时,有利于离子向轴向下游的输运,改善了离子的轴向均匀性.