共查询到13条相似文献,搜索用时 31 毫秒
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Yaw-Dong Wu 《中国光学快报(英文版)》2014,12(11):110607-39
In this work, we propose a new design of all-optical triplexer based on of metal–insulator–metal(MIM) plasmonic waveguide structures and ring resonators. By adjusting the radii of ring resonators and the gap distance, certain wavelengths can be filtered out and the crosstalk of each channel can also be reduced. The numerical results show that the proposed MIM plasmonic waveguide structure can really function as an optical triplexer with respect to the three wavelengths, that is, 1310, 1490, and 1550 nm, respectively. It can be widely used as the fiber access network element for multiplexer–demultiplexer wavelength selective in fiber-to-the-home communication systems with transmission efficiency higher than 90%. It can also be a potential key component in the applications of the biosensing systems. 相似文献
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In situ electronic structural study of VO_2 thin film across the metal–insulator transition 下载免费PDF全文
The in situ valence band photoemission spectrum (PES) and X-ray absorption spectrum (XAS) at V LⅡ-LⅢ edges of the VO2 thin film, which is prepared by pulsed laser deposition, are measured across the metal–insulator transition (MIT) temperature (TMIT=67 ℃). The spectra show evidence for changes in the electronic structure depending on temperature. Across the TMIT, pure V 3d characteristic d‖ and O 2p-V 3d hybridization characteristic πpd, σpd bands vary in binding energy position and density of state distributions. The XAS reveals a temperature-dependent reversible energy shift at the V LⅢ-edge. The PES and XAS results imply a synergetic energy position shift of occupied valence bands and unoccupied conduction band states across the phase transition. A joint inspection of the PES and XAS results shows that the MIT is not a one-step process, instead it is a process in which a semiconductor phase appears as an intermediate state. The final metallic phase from insulating state is reached through insulator–semiconductor, semiconductor–metal processes, and vice versa. The conventional MIT at around the TMIT=67 ℃ is actually a semiconductor–insulator transformation point. 相似文献
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钟奇 李文斌 张众 朱京涛 黄秋实 李浩川 王占山 Philippe Jonnard Karine Le Guen Yanyan Yuan Jean-Michel Andre 周红军 霍同林 《中国光学快报(英文版)》2013,(13):144-147
We report on the optical performance, structure and thermal stability of periodic multilayer films con- taining Zr and Al(lwt.-%Si) or Al(pure) layers designed for the use as extreme ultraviolet (EUV) high reflective mirrors in the range of 1~19 am. The comparison of A1/Zr (Al(lwt.-%Si)/Zr and Al(pure)/Zr) multilayers fabricated by direct-current magnetron sputtering shows that the optical and structural per- formances of two systems have much difference because of Si doped in A1. From the results of grazing incidence X-ray reflection (GIXR), X-ray diffraction (XRD), and EUV, the Si can disfavor the crystalliza- tion of AI and smooth the interface, consequently increase the reflectance of EUV in the Al(lwt.-%Si)/Zr systems. For the thermal stability of two systems, the first significant structural changes appear at 250 ~C. The interlayers are transformed from symmetrical to asymmetrical, where the Zr-on-A1 interlayers are thicker than Al-on-Zr interlayers. At 295 ~C for Al(pure)/Zr and 298 ~C for Al(lwt.-%Si)/Zr, the interfaces consist of amorphous Al-Zr alloy transform to polycrystalline Al-Zr alloy which can decrease the surface roughness and smooth the interfaces. Above 300 ~C, the interdiffusion becomes larger, which can enlarge the differences between Zr-on-Al and Al-on-Zr interlayers. Based on the analyses, the Si doped in Al cannot only influence the optical and structural performances of Al/Zr systems, but also impact the reaction temperatures in the annealing process. 相似文献
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分别以丙醇锆和正硅酸乙酯为原料,采用溶胶-凝胶工艺制备了性能稳定的ZrO2和SiO2溶胶。用旋转镀膜法在K9玻璃上分别制备了SiO2单层膜、ZrO2单层膜和ZrO2/SiO2/ZrO2三层膜。采用椭偏仪测量薄膜的厚度与折射率,用紫外-可见分光光度计测量了薄膜的透过率,利用TFCalc_Demo模系设计软件,采用三层理论模型对薄膜的透过率进行模拟,用扫描电镜(SEM)观察了三层膜的断面结构,用X射线光电子能谱仪(XPS)测量了薄膜的成分随深度方向的变化,进一步验证了ZrO2/SiO2/ZrO2三层膜之间的渗透关系,同时对多层膜的界面结构探测方法起到了借鉴作用。 相似文献
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分别以丙醇锆和正硅酸乙酯为原料,采用溶胶-凝胶工艺制备了性能稳定的ZrO2和Si O2溶胶。用旋转镀膜法在K9玻璃上分别制备了Si O2单层膜、ZrO2单层膜和ZrO2/Si O2/ZrO2三层膜。采用椭偏仪测量薄膜的厚度与折射率,用紫外-可见分光光度计测量了薄膜的透过率,利用TFCalc_Demo模系设计软件,采用三层理论模型对薄膜的透过率进行模拟,用扫描电镜(SEM)观察了三层膜的断面结构,用X射线光电子能谱仪(XPS)测量了薄膜的成分随深度方向的变化,进一步验证了ZrO2/Si O2/ZrO2三层膜之间的渗透关系,同时对多层膜的界面结构探测方法起到了借鉴作用。 相似文献
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为了研究金属互连电迁移失效机理并寻找新的电迁移表征参量,应用分形理论,通过电子扩散轨迹分形维数,将电迁移噪声时间序列分形维数与晶粒间界分形维数相联系,确定了噪声时间序列分形维数在电迁移演变中的变化趋势.研究结果表明,在金属互连电迁移前期,晶粒间界形貌越来越复杂,致使噪声时间序列的分形维数逐渐增大;成核后,由于空位凝聚成空洞,晶粒间界形貌变得较成核前规则,致使噪声时间序列的分形维数减小;成核时刻是其折点.实验结果证明理论分析的正确性,噪声时间序列的分形维数可望作为金属互连电迁演变的表征参量. 相似文献
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M. DuocastellaJ.M. Fernández-Pradas J.L. MorenzaP. Serra 《Applied Surface Science》2011,257(7):2825-2829
The deposition process of the laser-induced forward transfer of liquids at high laser fluences is analyzed through time-resolved imaging. It has been found that, at these conditions, sessile droplets are deposited due to the contact of a generated cavitation bubble with the receptor substrate, in contrast to the jet contact mechanism observed at low and moderate laser fluences. The bubble contact results in droplets with a larger diameter, a smaller contact angle and a lower uniformity than those of the jet mechanism. Therefore, in order to attain a high degree of resolution this mechanism should be prevented. 相似文献
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用二维光栅实现FPS互联网络 总被引:1,自引:0,他引:1
提出了一种应用二维光栅和简单的成像系统实现folded perfect shuffle(FPS)的新方法,该方法具有简单,易行的优点,实验证明,其效果良好. 相似文献
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全混洗交换Omega互连网络的光学实现 总被引:10,自引:6,他引:4
本文提出了一种由左、右全混洗和空间光开关列阵组成的等效Omega网络;成功地设计了一种实现全混洗互连的低损耗,等程的光学组合棱镜.由两块光学组合棱镜和空间光开关列阵组合成的光学系统实现了全混洗交换光学互连网络,该光学互连网络已在实验中得到了证实. 相似文献
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以薄膜光学的干涉理论和衍射光学的傅里叶模式理论为基础,给出了0.8μm飞秒激光器用多层介质膜脉宽压缩光栅的理论设计;设计采用H3L(HL)^9H0.5L2.4H的多层介质膜为基底,当刻蚀后表面浮雕结构的占宽比为0.35,线密度为1480线/mm,槽深为0.2μm,顶层HfO2的剩余厚度为0.15μm时,对于Littrow角度(36.7°)和TE波模式入射的衍射光栅其-1级衍射效率达到95%以上.
关键词:
飞秒激光
脉宽压缩光栅
多层介质膜 相似文献