Optical properties of hexagonal boron nitride thin films deposited by radio frequency bias magnetron sputtering

The optical properties of hexagonal boron nitride (h-BN) thin films were studied in this paper. The films were characterized by Fourier transform infrared spectroscopy, UV--visible transmittance and reflection spectra. h-BN thin films with a wide optical band gap E_g (5.86 eV for the as-deposited film and 5.97 eV for the annealed film) approaching h-BN single crystal were successfully prepared by radio frequency (RF) bias magnetron sputtering and post-deposition annealing at 970~K. The optical absorption behaviour of h-BN films accords with the typical optical absorption characteristics of amorphous materials when fitting is made by the Urbach tail model. The annealed film shows satisfactory structure stability. However, high temperature still has a significant effect on the optical absorption properties, refractive index n, and optical conductivity σ of h-BN thin films. The blue-shift of the optical absorption edge and the increase of E_g probably result from stress relaxation in the film under high temperatures. In addition, it is found that the refractive index clearly exhibits different trends in the visible and ultraviolet regions. Previous calculational results of optical conductivity of h-BN films are confirmed in our experimental results.     

无序双层六角氮化硼量子薄膜的电子性质

基于安德森紧束缚模型,本文研究了无序双层六角氮化硼量子薄膜的电子性质. 数值计算结果表明在双层都无序掺杂的情况下,六角氮化硼量子薄膜的电子是局域的, 其表现为绝缘体性质;而对于单层掺杂(无论是氮原子还是硼原子)的双层六角氮化硼量子薄膜, 在能谱的带尾出现了持续的迁移率边.这就说明在单层掺杂的双层六角氮化硼量子薄膜中产生了 金属绝缘体转变.这一结果证实了有序-无序分区掺杂的理论模型,为理解及调控双层六角氮化硼量子薄膜 的电子性质提供了有益的理论指导.     

等离子体增强化学气相沉积法制备立方氮化硼薄膜过程中的表面生长机理

利用感应耦合等离子体增强化学气相沉积法以Ar，He，N₂和B₂H₆为反应气体制备了高纯立方氮化硼薄膜.用四极质谱仪对等离子体状况进行了系统的分析，发现B₂H₆完全被电离而N₂只是部分被电离.H₂和过量的N₂在等离子体中生成大量中性的H原子和活化的N^*₂，它们与表面的相互作用严重地阻碍了立方 关键词： 立方氮化硼薄膜 等离子体 质谱     

Surface properties of cubic boron nitride thin films

Studying the surface properties of cubic boron nitride (c-BN) thin films is very important to making it clear that its formation mechanism and application. In this paper, c-BN thin films were deposited on Si substrates by radio frequency sputter. The influence of working gas pressure on the formation of cBN thin film was studied. The surface of c-BN films was analyzed by X-ray photoelectron spectroscopy (XPS), and the results showed that the surface of c-BN thin films contained C and O elements besides B and N. Value of N/B of c-BN thin films that contained cubic phase of boron nitride was very close to 1. The calculation based on XPS showed that the thickness of hexagonal boron nitride (h-BN) on the surface of c-BN films is approximately 0.8 nm.     

The electrical properties of sulfur-implanted cubic boron nitride thin films

Cubic boron nitride (c-BN) thin films are deposited on p-type Si wafers using radio frequency (RF) sputtering and then doped by implanting S ions. The implantation energy of the ions is 19 keV, and the implantation dose is between 10 15 ions/cm 2 and 10 16 ions/cm 2 . The doped c-BN thin films are then annealed at a temperature between 400°C and 800 C. The results show that the surface resistivity of doped and annealed c-BN thin films is lowered by two to three orders, and the activation energy of c-BN thin films is 0.18 eV.     

氮化铝薄膜的红外吸收光谱和喇曼光谱的研究

本文报道用直流平面磁控溅射法在Si片上生长c轴高度择优取向AIN薄膜的光学特性.俄歇谱分析表明薄膜是高纯的.从红外吸收光谱上分析获得晶格振动纵、横模的频率分别为2.5×10~(13)HZ和1.8×10~(13)Hz.从喇曼光谱上分析获得AIN薄膜的光学声子频率为297、512、607、656、832cm~(-1).与几种已知的纤锌矿结构二元化合物的声子频率模式类比获得AIN的光学声子模式.进一步分析表明AIN是一种静电力大于原子间各向异性力的晶体,且声子的最高频率与r~(-3/2)N~(-1/2)成正比.     

Thiol‐immobilized silver nanoparticle aggregate films for surface enhanced Raman scattering

We report a novel method for the fabrication of films of silver nanoparticle aggregates that are strongly attached to Si substrates (Thiol‐immobilized silver nanoparticle aggregates or TISNA). The attachment is achieved by chemically modifying the surface of a Si(100) surface in order to provide SH groups covalently linked to the substrate and then aggregating silver nanoparticles on these thiol covered surfaces. The transmission electron microscopy (TEM), scanning electron microscopy (SEM) and atomic force microscopy (AFM) characterization show a high coverage with single nanoparticles or small clusters and a partial coverage with fractal aggregates that provide potential hot spots for surface enhanced Raman scattering (SERS). We have confirmed the SERS activity of these films by adsorbing rhodamine 6G and recording the Raman spectra at several concentrations. By using the silver‐chloride stretching band as an internal standard, the adsorbate bands can be normalized in order to correct for the effects of focusing and aggregate size, which determine the number of SERS active sites in the focal area. This allows a quantitative use of SERS to be done. The adsorption–desorption of rhodamine 6G on TISNA films is reversible. These features make our TISNA films potential candidates for their use in chemical sensors based on the SERS effect. Copyright © 2008 John Wiley & Sons, Ltd.     

立方氮化硼薄膜的光学带隙

用射频溅射法在p型Si(100)衬底上沉积立方氮化硼(c-BN)薄膜,薄膜的成分由傅里叶变换红外谱标识,用紫外-可见分光光度计测量了c-BN薄膜的反射光谱,利用K-K(Kramers-Kroning)关系从反射谱计算出c-BN薄膜的光吸收系数,进而确定c-BN薄膜的光学带隙.对于立方相含量为55.4%的c-BN薄膜,光学带隙为5.38eV. 关键词： 立方氮化硼薄膜 光学带隙 K-K关系     

Van der Waals heterostructure of phosphorene and hexagonal boron nitride: First-principles modeling

We have studied the structural and electronic properties of a hybrid hexagonal boron nitride with phosphorene nanocomposite using ab initio density functional calculations. It is found that the interaction between the hexagonal boron nitride and phosphorene is dominated by the weak van der Waals interaction, with their own intrinsic electronic properties preserved. Furthermore, the band gap of the nanocomposite is dependent on the interfacial distance. Our results could shed light on the design of new devices based on van der Waals heterostructure.     

Photodissociation effects on pulsed laser deposited silver oxide thin films: surface‐enhanced resonance Raman scattering

Temporal Raman scattering measurements with 488, 532 and 632 nm excitation wavelengths and normal Raman studies by varying the power (from 30 W/cm² to 2 MW/cm²) at 488 nm were performed on silver oxide thin films prepared by pulsed‐laser deposition. Initially, silver oxide Raman spectra were observed with all three excitation wavelengths. With further increase in time and power, silver oxide photodissociated into silver nanostructures. High‐intensity spectral lines were observed at 1336 ± 25 and 1596 ± 10 cm⁻¹ with 488 nm excitation. No spectral features were observed with 633 nm excitation. Surface‐enhanced resonance Raman scattering theory is used to explain the complex behavior in the intensity of the 1336/1596 cm⁻¹ lines with varying power of 488 nm excitation. Copyright © 2011 John Wiley & Sons, Ltd.     

基于二维六方氮化硼材料的光子晶体非对称传输异质结构设计

二维六方氮化硼(hexagonal boron nitride,hBN)材料在产生光学稳定的超亮量子单光子光源领域有着潜在应用,有望用于量子计算和信息处理平台,已成为研究热点.而光学非对称传输设备是集成量子计算芯片中的关键器件之一.本文从理论上提出了一种基于hBN材料光子晶体异质结构的纳米光子学非对称光传输器件.运用平...     

Surface‐enhanced Raman scattering of N‐acetylneuraminic acid on silver nanoparticle surface

N‐Acetylneuraminic acid (sialic acid, Neu5Ac) has recently gained interest as a potential marker for a variety of pathophysiological processes, although no Raman study has been reported for this important biomolecule. In this paper, the vibrational properties of Neu5Ac were studied by means of Raman, surface‐enhanced Raman scattering (SERS), and density functional theory calculations. By adsorption of Neu5Ac on silver nanoparticle surface, strongly enhanced Raman intensities are obtained, allowing easy measurement of small amounts of aqueous Neu5Ac (10 µl of a 10⁻⁷ m solution) utilizing low laser power and short exposure time. The mechanism of adsorption of Neu5Ac on the silver surface is discussed on the basis of the experimental and theoretical results. This study demonstrates that SERS can provide an effective tool for development of a label‐free, rapid, and sensitive optical platform for identification of Neu5Ac. Copyright © 2014 John Wiley & Sons, Ltd.     

石墨烯和六方氮化硼纳米片的几何结构、电子结构、磁性及边缘特性研究

采用基于密度泛函理论(DFT)的第一性原理计算方法,计算了多种尺寸的石墨烯和六方氮化硼纳米片的性质,系统研究了其中的量子尺寸效应.研究的最大尺寸纳米片的直径约为5.5 nm,包含816个原子.对纳米片及其边缘的几何结构、电子结构、磁性性质以及电子分布进行了深入探讨,发现石墨烯和六方氮化硼纳米片最外层原子有由锯齿形向圆形变化的趋势,使得纳米片最外层更加平滑.随着纳米片尺寸的增加,能级由分立逐渐变得连续,纳米片由孤立分子态逐渐变得接近无限的晶体;禁带宽度总体有下降的趋势,符合量子尺寸效应.纳米片存在明显的磁性,磁矩主要集中在最外层原子上,且在相对平滑的地方容易出现磁性,相对弯曲的地方不易出现磁性.当增加体系的电子数时,增加的电子主要分布在最外层,使得纳米片整体磁性呈递减的趋势;当减少体系的电子数时,减少的电子的分布逐渐由最外层向内收缩,体系的总磁矩略有增加.研究结果对石墨烯和六方氮化硼纳米片的应用有参考价值.     

Influence of oxygen on the growth of cubic boron nitride thin films by plasma-enhanced chemical vapour deposition

Cubic boron nitride thin films were deposited on silicon substrates by low-pressure inductively coupled plasma-enhanced chemical vapour deposition. It was found that the introduction of O₂ into the deposition system suppresses both nucleation and growth of cubic boron nitride. At a B₂H₆ concentration of 2.5\% during film deposition, the critical O₂ concentration allowed for the nucleation of cubic boron nitride was found to be less than 1.4\%, while that for the growth of cubic boron nitride was higher than 2.1\%. Moreover, the infrared absorption peak observed at around 1230--1280~cm^-1, frequently detected for cubic boron nitride films prepared using non-ultrahigh vacuum systems, appears to be due to the absorption of boron oxide, a contaminant formed as a result of the oxygen impurity. Therefore, the existence of trace oxygen contamination in boron nitride films can be evaluated qualitatively by this infrared absorption peak.     

六方氮化硼单层中一种(CN)3VB缺陷的第一性原理计算

二维六方氮化硼(hBN)的点缺陷最近被发现可以实现室温下的单光子发射,而成为近年的研究热点.尽管其具有重要的基础和应用研究意义,hBN中发光缺陷的原子结构起源仍然存在争议.本文采用基于密度泛函理论的第一性原理计算,研究hBN单层中一种B空位附近3个N原子被C替代的缺陷(CN)3VB.在hBN的B空位处,3个N原子各自带...     

SERS activity of pulsed laser ablated silver thin films with controlled nanostructure

The surface‐enhanced Raman scattering (SERS) activity of silver thin films deposited by the pulsed laser ablation technique was investigated. The samples were grown in a controlled Ar atmosphere at pressures ranging between 10 and 70 Pa, and changing the number of laser pulses. Different surface morphologies, from isolated nearly spherical nanoparticles (NPs) to larger islands with smooth edges, were observed by means of scanning and transmission electron microscopies, as a function of the different deposition conditions adopted. SERS measurements were performed by soaking the samples in rhodamine 6G aqueous solutions over the concentration range between 1.0 × 10⁻⁴ and 5.0 × 10⁻⁸ M . Raman spectra were acquired using both the 632.8 and 514.5 nm excitation sources. The dependence of the SERS activity of the samples on the observed surface morphology is presented and discussed. The presence of the so called hot spots is envisaged. Copyright © 2011 John Wiley & Sons, Ltd.     

表面热透镜技术应用于薄膜微弱吸收测量的理论和实验

由薄膜表面光热形变简化理论和表面热透镜衍射理论导出表面热透镜信号表达式，从理论上证明了表面热透镜信号和薄膜吸收率的线性关系. 应用表面热透镜技术研制了薄膜吸收测量仪，测量结果表明其吸收率测量灵敏度和精度均达10^-6量级. 关键词： 吸收测量 表面热透镜 光热形变 薄膜     

高质量宽带隙立方氮化硼薄膜的研究进展

文章着重介绍了最近研制出的高质量宽带隙立方氮化硼薄膜的三种制备方法和结构特性 :(1)用射频溅射法在Si衬底上制备出立方相含量在 90 %以上 ,Eg>6 .0eV的c-BN薄膜 ;(2 )用离子束辅助的化学气相沉积法(CVD) ,在金刚石上外延生长出立方含量达 10 0 %的单晶c -BN薄膜 ;(3)用微波电子回旋共振CVD法 (MW -ECR-CVD)在金刚石上外延生长出高纯c-BN薄膜 .这些高纯c -BN薄膜 ,可应用于制作各种半导体 (主要是高温、高频大功率 )电子器件 .     

表面热透镜薄膜吸收测量灵敏度提高方法

为提高表面热透镜薄膜吸收测量仪的灵敏度，在表面热透镜衍射理论基础上，通过数值模拟给出了探测激光腰斑半径、探测激光腰斑到样品表面距离、样品到探测光纤端面距离等仪器参数的优化方法. 经优化调整后该仪器能达到优于0.1ppm量级的薄膜吸收率测量灵敏度. 关键词： 吸收测量 表面热透镜 光热形变 薄膜     

六角氮化硼纳米带的几何和电子结构理论研究

本文采用密度泛函B3LYP方法在6-31G*水平上,对一系列不同宽度的锯齿型和扶手椅型六角氮化硼纳米带进行了理论研究。结果表明纳米带宽度对体系的性质有规律性的影响。随着宽度的增加,纳米带不同位置的硼氮键键长差异逐步减小从而提高了整个体系的共轭性;锯齿型纳米带的能隙单调减小而扶手椅型纳米带的能隙在减小的同时出现振荡,且振幅随宽度逐渐减小。锯齿型氮化硼纳米带的化学势在特定宽度出现了极值点。前线分子轨道的分布随着宽度的增加出现了非均匀分布,呈现出向边界偏移的现象。