Temperature-dependent dielectric properties of Au/Si_3N_4/n-Si (metal insulator semiconductor) structures

The dielectric properties of Au/Si3N4/n-Si(MIS)structures are studied using the admittance measurements(C–V and G/ω–V)each as a function of temperature in a range from 80 K to 400 K for two frequencies(100 kHz and 1 MHz).Experimental results show that both the dielectric constant(ε)and the dielectric loss(ε)increase with temperature increasing and decrease with frequency increasing.The measurements also show that the ac conductivity(σac)increases with temperature and frequency increasing.The lnσacversus 1000/T plot shows two linear regions with different slopes which correspond to low(120 K–240 K)and high(280 K–400 K)temperature ranges for the two frequencies.It is found that activation energy increases with frequency and temperature increasing.     

Improvement of sintering,nonlinear electrical,and dielectric properties of ZnO-based varistors doped with TiO_2

The effects of TiO_2 on sintering and nonlinear electrical properties of(98.5-x)ZnO–0.5MnO_2–0.5Co_2O_3-0.5Bi_2O_(3–x)TiO_2(x = 0.3,0.5,0.7,0.9 mol%) ceramic varistors prepared by the ceramic technique are investigated in this work.The optimum sintering temperature of the prepared samples is deduced by determining the firing shrinkage and water absorption percentages.The optimum sintering temperature is found to be 1200℃,at which each of the samples shows a maximum firing shrinkage and minimum water absorption.Also minimum water absorption appears in a sample of x = 0.9 mol%.Higher sintering temperature and longer sintering time give rise to a reduction in bulk density due to the increased amount of porosity between the large grains of ZnO resulting from the rapid grain growth induced by the liquid phase sintering.The crystal size of ZnO decreases with increasing TiO_2 doping.The addition of TiO_2 improves the nonlinear coefficient and attains its maximum value at x = 0.7 mol% of TiO_2,further addition negatively affects it.A decrease in capacitance consequently in the dielectric constant is recorded with increasing the frequency in a range of 30 kHz–200 kHz.The temperature and composition dependences of the dielectric constant and AC conductivity are also studied.The increase of temperature raises the dielectric constant because it increases ionic response to the field at any particular frequency.     

Effective dielectric constant model of electromagnetic backscattering from stratified air–sea surface film–sea water medium

Studies of surface film medium on the sea surface are carried out in this paper for developing the technology to automatically detect and classify sea surface films, and an effective dielectric constant model of electromagnetic backscattering from a stratified air–ocean interface. Numerical results of the new model show the characteristics of effective dielectric constants for the air–sea surface film–sea water medium as follows. The effective dielectric constants decrease with increasing relative dielectric constants of the sea surface films. The effective dielectric constants decrease in horizontal polarization(abbr. HH polarization) and increase in VV vertical polarization(abbr. VV polarization) with increasing radar incident angle. Effective dielectric constants vary with relative sea surface film thickness as a cosinusoidal function of sea surface film thickness. Effective dielectric constant of VV polarization is larger than that of HH polarization. Two potential applications are found with our model, i.e., the retrieval of dielectric constants from the sea surface film, and the film thickness retrieval with our model. Our model has a highly significant influence on improving the technology related to the remote sensing of sea surface films.     

Effect of F- and CH-Doped on Dielectric Properties of SiCOH Films Deposited by Decamethylcyclopentasiloxane Electron Cyclotron Resonance Plasma

We investigate the effect of CH-doped and F-doped on dielectric properties of SiCOH films deposited by de- camethylcyclopentasiloxane （DMCPS） electron cyclotron resonance plasma. The dielectric constant k is closely related to the configurations of films. For the films deposited only using DMCPS, the minimum k is as low as 2.88. By adding CH4 in the precursor, the k value can be reduced to 2.45 due to the film density decreasing by incorporating large size CHx groups. By adding CHF3 in the precursor, the k value can also be reduced to 2.48 due to the incorporation of the weak-polarization F atom. Thus the dielectric constant for SiCOH films depends on not only the film density but also the polarization of atoms. By increasing the film density or by reducing the polarization of atoms under the condition of a lower film density, the low dielectric constant SiCOH films can be obtained.     

Epitaxial growth and in-plane dielectric properties of orthorhombic HoMnO3 films

Orthorhombic HoMnO3(HMO) thin films were grown epitaxially on LaAlO3(001) substrates by using pulsed laser deposition technique. The films showed perfect orthorhombic crystallization and were well-aligned with the substrates. The in-plane dielectric constant and loss of HMO films were measured as functions of temperature(80–300 K) and frequency(120 Hz–100 kHz) by using coplanar interdigital electrodes. Two thermally activated dielectric relaxations were found, and the respective peaks shifted to higher temperatures as the measuring frequency increased. The in-plane dielectric properties of epitaxial orthorhombic HMO films were considered as universal dielectric response behavior, and the dipolar effects and the hopping conductivity induced by the charge carriers were used to explain the results.     

Effect of external electric field on crystalline structure and dielectric properties of Bi_(1.5)MgNb_(1.5)O_7 thin films

Bismuth-based cubic pyrochlore materials have attractive dielectric properties, especially dielectric tunability. The Bi_(1.5)MgNb_(1.5)O_7 ceramic samples were prepared by solid state reaction. The XRD results and SEM pictures prove the raw material are well mixed and co-fired and the BMN cubic pyrochlore is well crystallized, no second phase was found in the result. BMN thin film were fabricated by depositing BMN ceramic nanoparticles on the sapphire. The BMN thin film has a high dielectric tunability of 43% at a bias voltage of 1.5 MV/cm, with loss tangent lower than 0.009. A Raman study of BMN cubic pyrochlore reveals O′–A–O′and O–A–O bending modes contribute to 80% of dielectric permittivity,obstructing these modes such as applying external electric field can have apparent influence on dielectric constant. Berry Phase calculation results shows that A_2 O′tetrahedrons are more easy to distort under an external field. The A-site Mg have the highest displacement(0.765028 ?), followed by A-site Bi cations(0.346317 ?). Compared to zero-bias thin film,the biased one with A–O and A–O′bonds being stretched and external coulomb force applied on cations and anions, the dielectric constant under bias field dramatically decreased.     

Dielectric Characterization of Free—Standing Diamond Films

The dielectric properties of free-standing diamond films grown by the dc arc-jet plasma method are measured by an impedance analyser in the temperature range of 298-573K and at frequencies between 1000Hz and 1MHz.In the temperature and frequency ranges,the loss tangent can be expressed as a function of temperature and frequency.The loss tangent increases slightly with increasing temperature and frequency,The dielectric properties of the diamond films decrease with the increasing deposited temperature.The structure and quality of diamond films have been analysed by scanning electron microscopy,x-ray diffraction and raman spectroscopy.     

Effects of electron–optical phonon interactions on the polaron energy in a wurtzite ZnO/Mg_xZn_(1-x)O quantum well

We investigated the properties of polarons in a wurtzite ZnO/MgxZn1-xO quantum well by adopting a modified Lee–Low–Pines variational method, giving the ground state energy, transition energy, and phonon contributions from various optical-phonon modes to the ground state energy as functions of the well width and Mg composition. In our calculations, we considered the effects of confined optical phonon modes, interface-optical phonon modes, and half-space phonon modes, as well as the anisotropy of the electron effective band mass, phonon frequency, and dielectric constant. Our numerical results indicate that the electron–optical phonon interactions importantly affect the polaronic energies in the ZnO/MgxZn1-xO quantum well. The electron–optical phonon interactions decrease the polaron energies. For quantum wells with narrower wells, the interface optical phonon and half-space phonon modes contribute more to the polaronic energies than the confined phonon modes. However, for wider quantum wells, the total contribution to the polaronic energy mainly comes from the confined modes. The contributions of the various phonon modes to the transition energy change differently with increasing well width. The contribution of the half-space phonons decreases slowly as the QW width increases, whereas the contributions of the confined and interface phonons reach a maximum at d ≈ 5.0 nm and then decrease slowly. However,the total contribution of phonon modes to the transition energy is negative and increases gradually with the QW width of d.As the composition x increases, the total contribution of phonons to the ground state energies increases slowly, but the total contributions of phonons to the transition energies decrease gradually. We analyze the physical reasons for these behaviors in detail.     

Dielectric and Ferroelectric Properties of La-Doped SrBi2Nb2O9 Ceramics

Sr1-xLa2x/3Bi2Nb20O （0 ≤ x ≤0.2） ceramic samples are prepared by the solid-state reaction method. Their structure, dielectric and ferroelectric properties are investigated. The incorporation of La^3＋ improves the den- sification and decreases the grain size of the ceramics without changing the crystal structure. The remanent polarization 2PT increases with increasing La content and reaches a maximum value of 22.8μC/cm^2 at x = 0.125, which is approximately 60% larger than that of pure SrBi2Nb2O9. The Curie temperature keeps almost unchanged at a value of about 440℃. The relationship between doping and the ferroeleetrie and dielectric properties are discussed.     

Dielectric Performance of Porous Methyl Silsesquioxane/Triacetyl-β-Cyclodextrin Thin Films

Porous methyl silsesquioxane thin films with low dielectric constant are successfully synthesized by means of the sol-gel spin-coating method. The precursor solutions are prepared by properly mixing the polymer as a matrix with different contents of triacetyl-β-cyclodextrin （TABCD） as a porogen. The chemical structure, dielectric constants, optical constants and void fraction are investigated by the ellipsometric porosimetry, Fourier transform infrared （FTIR） spectroscopy, and other methods. Influences of TABCD and methyl trimethoxysilane （MTMS） on the dielectric properties are discussed. For those samples with higher porogen loading, orientation and electronic polarizations are lower in low and high frequency regions, respectively, because of a considerably smaller number of polar molecules. The FTIR results suggest that high R value （molar ratio of H2 O to MTMS） is more advantageous for formation of cage structures and the cage/network structural ratio increases with the increasing R value.