共查询到20条相似文献,搜索用时 15 毫秒
1.
2.
Bicrystals of Fe-6 at.% Si alloy containing <001> 5 tilt grain boundaries with a deposited zinc layer have been annealed at various hydrostatic pressure at four temperatures between 700° and 905°C. After the anneals the dihedral angle of the grain boundary groove formed at the site of the grain boundary intersection with the solid-melt interphase boundary has been measured. The transition from complete to incomplete wetting of the grain boundary by the zinc-rich melt (dewetting phase transition) has been found to occur as the pressure increased at all temperatures studied. The temperature dependence of the dewetting transition pressure p
w
has been determined. That dependence has a minimum at a temperature of 790°C, which is close to the peritectic temperature in the Fe–Zn system (782°C). A thermodynamic analysis of the wetting phenomena in the two-component system, based on Becker's regular solution model for the surface tension of the interphase boundary, explains the minimum in the p
w
(T) dependence. 相似文献
3.
由于铍薄膜极易被X射线穿透, 传统的几何模式下很难获得有效的X射线衍射应力分析结果. 本文采用掠入射侧倾法分析SiO2基底上Be薄膜残余应力, 相比其他衍射几何方法, 提高了衍射的信噪比, 获得的薄膜应力拟合曲线线形较好. 对Be薄膜的不同晶面分析, 残余应力结果相同, 表明其力学性质各向同性; 利用不同掠入射角下X射线的穿透深度不同, 获得应力在深度方向上的分布; 由薄膜面内不同方向的残余应力相同, 确定薄膜处于等双轴应力状态.
关键词:
Be薄膜
X射线衍射
应力 相似文献
4.
采用低压MOCVD系统,在生长过程中使用SiNx原位淀积的方法产生纳米掩模,并 在纳米掩模上进行选区生长和侧向外延制备了GaN外延薄膜.使用拉曼光谱和光荧光的手段对 GaN外延膜中的残余应力进行了研究.研究发现,用SiNx原位淀积出纳米掩模后 ,GaN生长将由二维向三维转变,直到完全合并为止.利用拉曼光谱和光荧光谱分别研究了薄 膜中的残余应力,两者符合得很好;这种方法生长出的GaN薄膜的应力分布较传统的侧向外 延更加均匀;并且从中发现随着生长过程中SiNx原位淀积时间的增加,生长在 其上的GaN外延膜中的残余应力减小.这是因为,随着SiNx原位淀积时间的增加 ,SiNx纳米掩模的覆盖度也增大.因此侧向外延区的比例增大,残余应力随之减 小.
关键词:
GaN
x原位淀积')" href="#">SiNx原位淀积
拉曼
光荧光
残余应力 相似文献
5.
Masoud Allahkarami 《Phase Transitions》2013,86(1-2):169-178
Engineering favorable residual stress for the complex geometry of bi-layer porcelain-zirconia crowns potentially prevents crack initiation and improves the mechanical performance and lifetime of the dental restoration. In addition to external load, the stress field depends on initial residual stress before loading. Residual stress is the result of factors such as the thermal expansion mismatch of layers and compliance anisotropy of zirconia grains in the process of sintering and cooling. Stress induced phase transformation in zirconia extensively relaxes the residual stress and changes the stress state. The objective of this study is to investigate the coupling between tetragonal to monoclinic phase transformations and residual stress. Residual stress, on the surface of the sectioned single load to failure crown, at 23 points starting from the pure tetragonal and ending at a fully monoclinic region were measured using the micro X-ray diffraction sin2 ψ method. An important observation is the significant range in measured residual stress from a compressive stress of ?400?MPa up to tensile stress of 400?MPa and up to 100% tetragonal to monoclinic phase transformation. 相似文献
6.
Based on the fact that rubbed groove patterns also affect the anchoring of liquid crystals at substrates,a quartic coupling is included in constructing the surface energy for a liquid crystal cell.The phase diagram and the wetting behaviors of the liquid crystal cell,bounded by surfactant-laden interfaces in a magnetic field perpendicular to the substrate are discussed by taking the quartic coupling into account.The nematic order increases at the surface while it decreases in the bulk as a result of the introduction of quartic substrate-liquid crystal coupling,indicating that the groove anchoring makes the liquid crystal molecules align more orderly near the substrate than away from it.This causes a different wetting behavior:complete wetting. 相似文献
7.
Fabrication of pillar-array superhydrophobic silicon surface and thermodynamic analysis on the wetting state transition 下载免费PDF全文
Textured silicon (Si) substrates decorated with regular microscale square pillar arrays of nearly the same side length, height, but different intervals are fabricated by inductively coupled plasma, and then silanized by self-assembly octadecyl- trichlorosilane (OTS) film. The systematic water contact angle (CA) measurements and micro/nanoscale hierarchical rough structure models are used to analyze the wetting behaviors of original and silanized textured Si substrates each as a function of pillar interval-to-width ratio. On the original textured Si substrate with hydrophilic pillars, the water droplet possesses a larger apparent CAs (〉 90~) and contact angle hysteresis (CAH), induced by the hierarchical roughness of microscale pil- lar arrays and nanoscale pit-like roughness. However, the silanized textured substrate shows superhydrophobicity induced by the low free energy OTS overcoat and the hierarchical roughness of microscale pillar arrays, and nanoscale island-like roughness. The largest apparent CA on the superhydrophobic surface is 169.8~. In addition, the wetting transition of a gently deposited water droplet is observed on the original textured substrate with pillar interval-to-width ratio increasing. Furthermore, the wetting state transition is analyzed by thermodynamic approach with the consideration of the CAH effect. The results indicate that the wetting state changed from a Cassie state to a pseudo-Wenzel during the transition. 相似文献
8.
利用XRD技术测试了镀锌钝化膜结合界面的残余应力,同时通过电解抛光法检测了其厚度方向残余应力的分布规律,分析了残余应力对镀锌钝化膜结合强度的影响. 试验结果表明,镀锌钝化膜的残余应力均表现为压应力,并随着基体表面残余应力的增大而减小;钝化膜在2—10μm厚度方向的残应力为-274.5—-428.3MPa,其应力为梯度分布;镀锌钝化膜与基体的界面结合强度与其残余应力成反比,减小薄膜残余应力,有利于提高镀锌钝化膜与基体的结合强度.
关键词:
X射线衍射法(XRD)
镀锌钝化膜
结合强度
残余应力 相似文献
9.
An X-ray diffraction method was applied to measure residual stresses and stored elastic energy in deformed and annealed polycrystalline ferritic and austenitic steel samples. The orientation distribution of plastic incompatibility second-order stresses created during elastoplastic deformation was determined and presented in Euler space. Using deformation models, these stresses were correlated with different types of intergranular interactions occurring in the studied materials. An important decrease of the first- and the second-order residual stresses was observed during recovery and recrystallisation processes. Diffraction peak widths, related to dislocation density, were studied and correlated with stress variation during annealing process. Differences in stress relaxation between ferritic and austenitic samples were explained by different values of the stacking fault energy, which influences dislocation climb and cross-slip. 相似文献
10.
利用高功率Nd:YAG激光对不同工艺处理的SWOSC-V弹簧钢丝进行单点冲击处理,用X射线应力分析仪测量弹簧内外侧、侧表面的残余应力并计算出残余主应力,建立了激光冲击SWOSC-V弹簧钢丝表面残余应力的产生模型,并利用该模型分析了弹簧钢丝表面残余应力产生的原因。结果表明:弹簧钢丝在经激光冲击处理的表面强化区产生残余压应力,钢丝退火后直接激光冲击处理与经喷丸强化的钢丝激光冲击处理的表面残余应力变化不同,喷丸强化所引起的材料硬化是激光冲击处理弹簧钢丝残余应力变化不同的原因。 相似文献
11.
Residual stresses are found in the majority of multilayer thin film structures used in modem technology. The measurement and modeling of such stress fields and the elucidation of their effects on structural reliability and device operation have been a “growth area” in the literature, with contributions from authors in various scientific and engineering disciplines.
In this article the measurement of the residual stresses in thin film structures with X-ray diffraction techniques is reviewed and the interpretation of such data and their relationship to mechanical reliability concerns are discussed. 相似文献
12.
Zhanfeng Tu Yu Teng Jiajia Zhou Shifeng Zhou Heping Zeng Jianrong Qiu 《Journal of Raman spectroscopy : JRS》2013,44(2):307-311
Localized microstructure and elemental redistribution were induced in bismuth germanate glasses by irradiation with high repetition rate 800 nm femtosecond laser pulses. The confocal Raman spectra were examined to study the redistribution of elements and residual thermal stress. The microscopic Raman spectra indicated that the residual thermal stress increases from the unmodified region to the center of the laser modified region, while Bi is enriched at the boundary area of the inner structure of the laser modified region relative to Ge. Electron microprobe analysis further confirmed the elemental redistribution of Bi and Ge, which agrees well with the Raman spectral analysis. Copyright © 2012 John Wiley & Sons, Ltd. 相似文献
13.
The magnetization reversal of Fe/Cu(100) ultrathin films grown at
room temperature is investigated by using an in situ
magneto-optical Kerr effect polarimeter with a magnet that can
rotate in a plane of incidence. There occur spin reorientation
transitions from out-of-plane to in-plane magnetizations in 8 and 12
monolayers (ML) thick iron films. The coercive fields are observed
to be proportional to the reciprocal of the cosine with respect to
the easy axis, suggesting that the domain-wall displacement plays a
main role in the magnetization reversal process. 相似文献
14.
利用高功率Nd:YAG激光对不同工艺处理的SWOSC-V弹簧钢丝进行单点冲击处理,用X射线应力分析仪测量弹簧内外侧、侧表面的残余应力并计算出残余主应力,建立了激光冲击SWOSC-V弹簧钢丝表面残余应力的产生模型,并利用该模型分析了弹簧钢丝表面残余应力产生的原因。结果表明:弹簧钢丝在经激光冲击处理的表面强化区产生残余压应力,钢丝退火后直接激光冲击处理与经喷丸强化的钢丝激光冲击处理的表面残余应力变化不同,喷丸强化所引起的材料硬化是激光冲击处理弹簧钢丝残余应力变化不同的原因。 相似文献
15.
采用有限元方法对钼基体上不同厚度(20~1 000 μm)金刚石膜的热残余应力进行了全面的模拟与分析,得出了它们在膜内分布的等值线图,研究了金刚石膜厚度尺寸对整个膜内的最大主拉应力和界面处每个应力分量最大值的影响。结果表明:在整个膜内,最大主拉应力的位置出现在膜的表面、界面或侧面,其值随膜厚度的增加而增大;在界面处,最大轴向应力随膜厚度的增加而增大,而最大径向压应力、最大周向压应力和最大剪应力则随膜厚度的增加而减小,其中最大剪应力减幅较小;膜厚度越大时,以上各量随厚度增(减)的速度越慢。其结论对于在金刚石膜的制备中合理地选择厚度、有效地进行应力控制有一定的参考价值。 相似文献
16.
采用磁控溅射方法同时在Si(100)和聚酰亚胺(PI)基体上沉积W膜,对比研究不同基体约束对纳米晶W膜微观结构及应力诱导的开裂行为的影响.结果发现,在两种基体上W膜的裂纹形态明显不同.在Si基体上W膜的裂纹呈楔形,而在PI基体上W膜的裂纹呈半圆柱形凸起于薄膜表面.这种裂纹形态的差异源于两种基体上W膜的变形机理不同.在刚性Si基体上,W膜的裂纹扩展是通过晶粒平面内的转动实现的,而在柔性PI基体上W膜裂纹扩展是通过排列晶粒在平面内、外的转动协调完成的.分析表明,两种截然不同的开裂行为与不同基体上薄膜内应力的变
关键词:
W膜
残余应力
裂纹
晶粒 相似文献
17.
利用ABAQUS有限元软件进行了单个圆形高斯光斑的激光冲击强化数值模拟,分析材料表面光斑中心区域形成的"残余应力洞"现象,并通过分析材料的动态力学响应特征揭示了"残余应力洞"的形成机制。结果表明:在冲击波加载时,光斑边界处会产生很强的剪切应力,形成向四周传播的表面稀疏波和向材料内部传播的剪切波。当稀疏波同时传播到光斑中心,发生相遇、汇聚,使材料产生急剧的上下位移过程,造成冲击波加载塑性变形后的二次塑性变形。二次塑性变形中形成了较大的剪切塑性应变,并降低了冲击波加载阶段产生的轴向和径向塑性应变,使残余压应力降低,从而形成"残余应力洞"。 相似文献
18.
通过X射线应力测试和有限元分析相结合的方法,研究了金刚石层厚度对聚晶金刚石复合片(PDC)残余应力的影响,并根据实验测试结果推导出了PDC表面中心与边缘的应力随金刚石层厚度变化的关系式。随着金刚石层厚度由0.5 mm增加到2.0 mm,PDC表面中心的压应力从1 800 MPa下降至700 MPa左右,而边缘部分的应力逐渐由压应力转为拉应力。金刚石层加厚虽然对边缘部分的最大拉应力影响不大,但使PDC边缘拉应力区宽度由0.76 mm增加到了2.85 mm。金刚石层厚度的增加还使得PDC边缘界面附近y方向的最大拉应力和位于界面边缘处的最大剪应力显著加大,这是金刚石层较厚的PDC界面容易产生裂纹的主要原因。 相似文献
19.
沉积温度对氧化钇稳定氧化锆薄膜残余应力的影响 总被引:2,自引:3,他引:2
采用自制掺摩尔分数12%的YzO2的ZrO2混合颗粒料为原料,在不同的沉积温度下用电子束蒸发方法沉积氧化钇稳定氧化锆(YSZ)薄膜样品.利用ZYGO MarkⅢ-GPI数字波面干涉仪对氧化钇稳定氧化锆薄膜的残余应力进行了研究,讨论了沉积温度对残余应力的影响.实验结果表明:随沉积温度升高,氧化钇稳定氧化锆薄膜中残余应力状态由张应力变为压应力.且压应力值随着沉积温度升高而增大;用X射线衍射仪表征了不同沉积温度下氧化钇稳定氧化锆薄膜的微观结构,探讨了薄膜微观结构与其应力的对应关系,并对比了纯ZrO2薄膜表现出的应力状念. 相似文献
20.
先通过光弹实验测量残余应力的分布形态,然后通过应力—光学定律计算出相应的残余应力值,最后把该数值做了数值模拟分析。研究表明:对于同一工艺参数,残余应力的数值从浇口附近至流动末端逐渐减小;对于不同工艺参数,对残余应力的影响程度从大到小的顺序为熔体温度、模具温度、注射压力、冷却时间。 相似文献