Lattice structures and electronic properties of MO/MoSe2 interface from first-principles calculations

Using first-principles plane-wave calculations within density functional theory, we theoretically studied the atomic structure, bonding energy and electronic properties of the perfect Mo (110)/MoSe₂ (100) interface with a lattice mismatch less than 4.2%. Compared with the perfect structure, the interface is somewhat relaxed, and its atomic positions and bond lengths change slightly. The calculated interface bonding energy is about −1.2 J/m², indicating that this interface is very stable. The MoSe₂ layer on the interface has some interface states near the Fermi level, the interface states are mainly caused by Mo 4d orbitals, while the Se atom almost have no contribution. On the interface, Mo-5s and Se-4p orbitals hybridize at about −6.5 to −5.0 eV, and Mo-4d and Se-4p orbitals hybridize at about −5.0 to −1.0 eV. These hybridizations greatly improve the bonding ability of Mo and Se atom in the interface. By Bader charge analysis, we find electron redistribution near the interface which promotes the bonding of the Mo and MoSe₂ layer.     

CdS/ZnO纳米复合结构制备及荧光特性研究

为增强CdS纳米粒子的荧光强度,以及稳定性,研究了Cd,S不同质量比,有无稳定剂等条件下CdS纳米粒子的制备及荧光特性。在碱性条件下,利用水热法合成了CdS/ZnO的纳米复合结构,并对所有样品进行了XRD、荧光光谱和SEM表征。测试结果表明所制备的CdS纳米粒子和CdS/ZnO的纳米复合结构粒子成分单一且纯净;ZnO复合在CdS表面;在紫外光(328.5 nm)激发下,CdS/ZnO纳米复合结构的发射峰位于463 nm处,峰形窄而对称,CdS/ZnO纳米复合结构的荧光强度比CdS纳米粒子的荧光强度有显著增强,且CdS和ZnO物质量之比为1∶1条件下,荧光强度最高,其荧光效率比单一CdS纳米粒子高出11%。通过第一性原理计算结果表明,CdS能带结构中,Cd-4d,S-3p和Cd-5s能带分别由5条、3条和1条能级构成,对比不同轨道的分态密度强度,看出CdS的导带边主要由Cd-5s轨道贡献,而价带边主要由S-3p轨道贡献,能量在-7 eV附近的电子态主要由Cd-4d轨道贡献。而ZnO上价带主要由O-2p电子构成,靠近费米能级的价带区域则主要由Zn-3d电子贡献,在导带部分,主要来源于Zn-4s和O-2p电子。由于在两种材料的复合结构中Zn-3d电子的能级和S-3p电子的能级接近,存在着二型带阶结构使能带变窄,容易形成跃迁,减小电子-空穴的复合,从而促进复合结构荧光效率的提高。     

Electronic States and Schottky Barrier Height at Metal/MgO(100) Interfaces

Using an ab initio total energy approach, we study the electronic structure of metal/MgO(100) interfaces. By considering simple and transition metals, different adsorption sites and different interface separations, we analyze the influence of the character of metal and of the detailed interfacial atomic structure. We calculate the interface density of states, electron transfer, electric dipole, and the Schottky barrier height. We characterize three types of electronic states: states due to chemical bonding which appear at well defined energies, conventional metal-induced gap states associated to a smooth density of states in the MgO gap region, and metal band distortions due to polarization by the electrostatic field of the ionic substrate. We point out that, with respect to the extended Schottky limit, the interface formation yields an electric dipole mainly determined by the substrate characteristics. Indeed, the metal-dependent contributions (interfacial states and electron transfer) remain small with respect to the metal polarization induced by the substrate electrostatic field.     

Lattice structures and electronic properties of WZ-CuInS_2/WZ-CdS interface from first-principles calculations

Using the first-principles plane-wave calculations within density functional theory, the perfect bi-layer and monolayer terminated WZ-CIS(100)/WZ-Cd S(100) interfaces are investigated. After relaxation the atomic positions and the bond lengths change slightly on the two interfaces. The WZ-CIS/WZ-Cd S interfaces can exist stably, when the interface bonding energies are-0.481 J/m~2(bi-layer terminated interface) and-0.677 J/m~2(monolayer terminated interface). Via analysis of the density of states, difference charge density and Bader charges, no interface state is found near the Fermi level.The stronger adhesion of the monolayer terminated interface is attributed to more electron transformations and orbital hybridizations, promoting stable interfacial bonds between atoms than those on a bi-layer terminated interface.     

H掺杂α-Fe2O3的第一性原理研究

α-Fe₂O₃是一种重要的磁性半导体材料, 在电子器件中应用广泛, 具有重要的研究意义. 本文基于密度泛函理论, 采用GGA+U方法, 应用第一性原理对间隙H掺杂前后的六方相α-Fe₂O₃的晶格常数、态密度、Bader 电荷分布进行了计算分析. 研究了U值对结果的影响, 发现U=6 eV时, 体相α-Fe₂O₃的晶胞平衡体积、Fe原子磁矩、带隙值与实验值最符合. 在选取合适U值后, 第一性原理计算结果表明, H掺杂后, 间隙H部分被氧化, 其最近邻的Fe 和O部分被还原, H和O有一定程度的成键. 在费米面附近, 出现了新的杂化能级, 杂化能级扩展了价带顶的宽度, 同时导带底下移, 引起带隙减小, 表明H掺杂是一种有效的能带结构调控方法.     

Sc2O3电子结构和光学性质的第一性原理研究

本文基于第一性原理平面波赝势(PWP)和广义梯度近似(GGA)方法,研究了Sc2O3的电子结构、态密度和光学性质. 计算结果表明：Sc2O3是一种直接带隙半导体,其能带宽度为3.79eV,价带顶部主要由O的2p和Sc的3p3d杂化而成,导带主要由Sc的3d和O的2p构成. 同时,文中也分析了Sc2O3的介电函数、折射率、光电导率和吸收谱等光学性质. 计算得到静态介电常数 ,折射率n0=1.25,在紫外区有较大的吸收系数.     

Ab-initio local density approximation description of the electronic properties of zinc blende cadmium sulfide (zb-CdS)

Ab-initio, self-consistent electronic energy bands of zinc blende CdS are reported within the local density functional approximation (LDA). Our first principle, non-relativistic and ground state calculations employed a local density potential and the linear combination of atomic orbitals (LCAO). Within the framework of the Bagayoko, Zhao, and Williams (BZW) method, we solved self-consistently both the Kohn-Sham equation and the equation giving the ground state density in terms of the wavefunctions of the occupied states. Our calculated, direct band gap of 2.39 eV, at the Γ point, is in accord with the experiment. Our calculation reproduced the peaks in the conduction and valence bands density of states, within experimental uncertainties. The calculated electron effective mass agrees with experimental findings.     

圆柱形散射子二维光子晶体的态密度与局域态密度

二维光子晶体只有赝带隙,因此能否利用二维光子晶体有效控制原子自发辐射是令人感兴趣也是有实际意义的问题。其中最重要的因素是态密度和局域态密度的性质。采用平面波展开结合晶体群论的方法计算了二维正方格子光子晶体的态密度和局域态密度。其中散射子为空气圆柱,放置在均匀的电介质背景上。结果显示两个特点:第一,总态密度和局域态密度在原来二维光子晶体赝带隙处虽然已经不为零,但是取值明显低于赝带隙范围之外的值,即存在一个准光子带隙。第二,局域态密度在空气散射子界面处发生突变,空气散射子区域的局域态密度相对较大,这可由电位移矢量的连续性来理解。由于这两个特点在其他二维光子晶体中也被发现过,它们可能是普遍存在的。     

VC(001)弛豫表面构型与电子结构第一性原理研究

用第一性原理方法对VC(001)清洁表面的构型和电子结构进行了详细研究，与TiC(001)面类似，VC(001)面弛豫后形成表面皱褶，其表层V原子和C原子分别朝体相和真空方向移动. 能带计算结果表明，过渡金属碳化物(001)面的能带结构符合刚性带理论模型. 对于VC(001)面，表面态主要处在-30eV附近，其主要成分为表层C原子的2pz轨道. 此外，以表层V原子的3d轨道成分为主的表面态出现在费米能级附近，由于这些表面态以表面法线方向的轨道(3d２z和3dxz/dyz)为主要成分，因此在表面反应中将起到重要作用，从而体现出与TiC(001)面不同的反应性质. 关键词： 过渡金属碳化物 表面态 能带结构     

Exact calculation of the current in a one-dimension model of a scanning tunneling microscope

Electric current as a function of applied voltage have been calculated between two one-dimensional semi-infinite atomic chains. A tight-binding two band model and the modified tight-binding equations technique have been used. The current derivatives are compared with the surface local density of states. The comparison shows that the current derivatives reproduce the local density of states with a significant distortion. It occurs due to wave vector dependence of the transmission coefficient of electronic waves falling on the interface between the chains.     

高压下Zn2GeO4带隙变化的第一性原理研究

采用基于密度泛函理论的第一性原理计算研究了Zn₂GeO₄晶体在高压下的电子结构和带隙变化行为. 研究结果发现, 随着压强的增加, Zn₂GeO₄ 能带间隙先变大, 在压强为9.7 GPa时达到最大值, 然后减小. 通过电子态密度、电荷布居数和电子差分密度分布图的研究分析可知:在低压区域(0< P< 9.7 GPa), 带隙的变大主要是由于原子间距离的减小造成的共价性增强和Ge原子随压强的变大局域性增强引起的; 在高压区域(P>9.7 GPa), 则是出现了离域现象, 诱发了离域电子的产生, 从而使带隙减小.     

Structural comparison of n-type and p-type LaAlO3/SrTiO3 interfaces

Using a surface x-ray diffraction technique, we investigated the atomic structure of two types of interfaces between LaAlO3 and SrTiO3, that is, p-type (SrO/AlO2) and n-type (TiO2/LaO) interfaces. Our results demonstrate that the SrTiO3 in the sample with the n-type interface has a large polarized region, while that with the p-type interface has a limited polarized region. In addition, atomic intermixing was observed to extend deeper into the SrTiO3 substrate at the n-type interface compared to the p type. These differences result in distinct degrees of band bending, which likely contributes to the striking contrast in electrical conductivity between the two types of interfaces.     

扶手椅型碳化硅纳米管电子结构和光学性质的研究

本文基于密度泛函理论研究了扶手椅型碳化硅纳米管(SiCNT)的电子结构、成键机制以及其光学性质。研究结果表明:当碳和硅的原子比为1∶1时,SiCNT的结构最为稳定,并且表现出诸多的优良性质。通过分析计算结果我们发现,SiCNT是间接带隙材料,并且管子的带隙随着直径的增加而增加。从SiCNT的轨道图谱中我们看到碳和硅原子之间属于sp2杂化,同时硅原子周围的电子密度明显要低于碳原子周围的电子密度。对能态密度的计算我们得知碳原子和硅原子分别主导价带和导带。与其它纳米管(BN)有所不同,SiCNT的光学性质更接近于各向同性材料。     

First-principles energy band calculation for undoped and N-doped InTaO4 with layered wolframite-type structure

The electronic structures of undoped and N-doped InTaO₄ with optimized structures are calculated within the framework of the density functional theory. Calculated lattice constants are in excellent agreement with experimental values, within a difference of 2%. The valence band maximum (VBM) is located near the middle point on the ZD line and the conduction band minimum (CBM) near the middle point on the DX line. This means that InTaO₄ is an indirect-gap material and a minimum theoretical gap between VBM and CBM is ca. 3.7 eV. The valence band in the range from −6.0 to 0 eV mainly consists of O 2p orbitals, where In 4d5s5p and Ta 5d orbitals are slightly hybridized with O 2p orbitals. On the other hand, the conduction band below 5.5 eV is mainly composed of the Ta 5d orbitals and the contributions of In and O orbitals are small. The band gap of N-doped InTaO₄ decreases by 0.3 eV than that of undoped InTaO₄, because new gap states originating from N 2p orbitals appear near the top of the valence band. This result indicates that doping of N atoms into metal oxides is a useful method to develop photocatalysts sensitive to visible light.     

第一原理研究界面弛豫对InAs/GaSb超晶格界面结构、能带结构和光学性质的影响

通过广义梯度近似的第一原理全电子相对论计算, 研究了不同界面类型InAs/GaSb超晶格的界面结构、电子和光吸收特性. 由于四原子界面的复杂性和低对称性, 通过对InAs/GaSb超晶格进行电子总能量和应力最小化来确定弛豫界面的结构参数. 计算了InSb, GaAs型界面和非特殊界面(二者交替)超晶格的能带结构和光吸收谱, 考察了超晶格界面层原子发生弛豫的影响.为了证实能带结构的计算结果, 用局域密度近似和Hartree-Fock泛函的平面波方法进行了计算. 对不同界面类型InAs/GaSb超晶格的能带结构计算结果进行了比较, 发现界面Sb原子的化学键和离子性对InAs/GaSb超晶格的界面结构、 能带结构和光学特性起着至关重要的作用.     

DFT study on electronic structures and optical absorption properties of C, S cation- doped SrTiO3

The effects of C cation and S cation doping on the electronic structures and optical properties of SrTiO₃ are investigated by density function theory (DFT) calculations. The calculated results reveal that the top of the valence band is predominately made up of the O 2p states for the pure SrTiO₃. When SrTiO₃ was doped with C cation and S cation, the top of the valence bands consists mainly of O 2p+C 2s hybrid orbitals and O 2p+S 3s hybrid orbitals, respectively. The band gap of SrTiO₃ is narrowed by the doping with C cation and S cation, especially for the C and S-codoped SrTiO₃. Moreover, the red shifts of the absorption edge are found by the calculated optical properties, which is consistent with reported experiment results. It is the explanation for their visible light respondency by the presence of C 2s and S 3s states on the upper edge of the valence band. All of these results can explain the good photocatalytic properties of C, S cation-codoped SrTiO₃ under visible light irradiation.      

硼烯纳米带能带结构和态密度的第一性原理研究

基于密度泛函理论,采用第一性原理的方法计算H修饰边缘不同宽度硼稀纳米带的电荷密度、电子能带结构、总态密度和分波态密度。结果表明,硼烯纳米带的宽度大小影响着材料的导电性能,宽度5的硼烯纳米带是间接带隙简并半导体,带隙值为0.674 eV,而宽度7的硼烯纳米带却具有金属材料的性质。分波态密度表明,宽度5的硼烯纳米带的费米能级附近主要是由B-2s、2p电子态贡献,H-1s主要贡献于下价带且具有局域性,消除了材料边缘的不稳定性。宽度7的B-2p和H-1s电子态贡献的导带和价带处于主导地位,费米能级附近B-2p和H-1s电子态的杂化效应影响材料的整体发光性能。     

CdS掺Mg和Ni电子结构和光学性质的密度泛函理论研究

采用基于密度泛函理论的第一性原理赝势平面波方法,对闪锌矿结构CdS和CdS∶M(M=Mg,Ni)几何结构、能带结构、电子态密度和光学性质进行了系统的研究。几何结构研究对掺杂后体系晶格常量进行了优化计算,结果表明Mg和Ni原子掺入CdS后晶格常量均减小,晶格发生局部畸变。进一步研究了掺杂对体系电子结构的影响,能带结构和电子态密度分析表明由于Ni 3d电子的引入使CdS∶Ni成为半金属铁磁半导体,而Mg 3s电子的引入CdS∶Mg带隙变宽。另外,体系掺杂后,吸收系数分析表明掺杂导致吸收峰在可见光波长区域变化显著,且掺Ni导致吸收峰进一步向长波方向移动。     

Pt掺杂CdS光学性质的第一性原理研究

基于密度泛函理论的第一性原理平面波超软赝势方法,运用Castep计算分析了Pt元素掺杂CdS结构,对本征CdS和掺杂晶体的能带结构、态密度以及光学性质进行了分析对比, 由掺杂前后的结果分析发现：Pt掺杂闪锌矿相CdS产生了新的能带,带隙明显缩小;CdS的吸收边产生红移,禁带宽度变窄,在可见光区具有较大吸收系数,提高了可见光的利用率,表现出较好的可见光光催化活性。     

Chemisorption of Cl on GaAs: a density functional-LCAO approach

A linear combination of atomic orbitals method supplemented by a local density approximation is applied to the calculation of Cl adsorbed on GaAs(110). We present results for coverages of and 1 monolayer. Our results show that Cl in the early stages of deposition tends to adsorb on Ga, although the deposition of Cl-pairs on Ga and As nearest neighbours is very likely. We also find that the majority deposition of Cl on Ga tends to pin the interface Fermi level in the As-like dangling bond, near the valence band top. These results are in good agreement with the available experimental data.