Ti/HfO2/Pt阻变存储单元中的氧空位聚簇分布

为了研究阻变存储器导电细丝的形成位置和分布规律, 使用X射线光电子能谱研究了Ti/HfO₂/Pt阻变存储器件单元中Hf 4f的空间分布, 得到了阻变层的微结构信息. 通过I-V测试, 得到该器件单元具有典型的阻变特性; 通过针对Hf 4f的不同深度测试, 发现处于低阻态时, 随着深度的增加, Hf⁴⁺化学组分单调地减小; 而处于高阻态和未施加电压前, 该组分呈现波动分布; 通过Hf⁴⁺在高阻态和低阻态下组分含量以及电子能损失谱分析, 得到高阻态下Hf⁴⁺组分的平均含量要高于低阻态; 另外, 高阻态和低阻态下的O 1s谱随深度的演变也验证了Hf⁴⁺的变化规律. 根据实验结果, 提出了局域分布的氧空位聚簇可能是造成这一现象的原因. 空位簇间的链接和断裂决定了导电细丝的形成和消失. 由于导电细丝容易在氧空位缺陷聚簇的地方首先形成, 这一研究为导电细丝的发生位置提供了参考.     

Si1Sb2Te3 phase change material for chalcogenide random access memory

This paper investigated phase change Si1Sb2Te3 material for application of chalcogenide random access memory. Current-voltage performance was conducted to determine threshold current of phase change from amorphous phase to polycrystalline phase. The film holds a threshold current about 0.155 mA, which is smaller than the value 0.31 mA of Ge2Sb2Te5 film. Amorphous Si1Sb2Te3 changes to face-centred-cubic structure at ~ 180℃ and changes to hexagonal structure at ~ 270℃. Annealing temperature dependent electric resistivity of Si1Sb2Te3 film was studied by four-point probe method. Data retention of the films was characterized as well.     

Charge transport and bipolar switching mechanism in a Cu/HfO_2/Pt resistive switching cell

Bipolar resistance switching characteristics are investigated in Cu/sputtered-HfO_2/Pt structure in the application of resistive random access memory(RRAM).The conduction mechanism of the structure is characterized to be SCLC conduction.The dependence of resistances in both high resistance state(HRS) and low resistance state(LRS) on the temperature and device area are studied.Then,the composition and chemical bonding state of Cu and Hf at Cu/HfO_2 interface region are analyzed by x-ray photoelectron spectroscopy(XPS).Combining the electrical characteristics and the chemical structure at the interface,a model for the resistive switching effect in Cu/HfO_2/Pt stack is proposed.According to this model,the generation and recovery of oxygen vacancies in the HfO_2 film are responsible for the resistance change.     

Perpendicular magnetic tunnel junction and its application in magnetic random access memory

Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy(PMA) are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy(PMA) are introduced. Next, a historical overview of PMA materials as magnetic electrodes, such as the RE–TM alloys TbFeCo and GdFeCo, novel tetragonal manganese alloys Mn–Ga, L10-ordered(Co, Fe)/Pt alloy, multilayer film [Co, Fe, CoFe/Pt, Pd, Ni, Au]N, and ultra-thin magnetic metal/oxidized barrier is offered. The other part of the article focuses on the optimization and fabrication of CoFeB/MgO/CoFeB p-MTJs, which is thought to have high potential to meet the main demands for non-volatile magnetic random access memory.     

Effects of different dopants on switching behavior of HfO_2-based resistive random access memory

In this study the effects of doping atoms(Al, Cu, and N) with different electro-negativities and ionic radii on resistive switching of HfO2-based resistive random access memory(RRAM) are systematically investigated. The results show that forming voltages and set voltages of Al/Cu-doped devices are reduced. Among all devices, Cu-doped device shows the narrowest device-to-device distributions of set voltage and low resistance. The effects of different dopants on switching behavior are explained with deferent types of CFs formed in HfO2 depending on dopants: oxygen vacancy(Vo) filaments for Al-doped HfO2 devices, hybrid filaments composed of oxygen vacancies and Cu atoms for Cu-doped HfO2 devices,and nitrogen/oxygen vacancy filaments for N-doped HfO2 devices. The results suggest that a metal dopant with a larger electro-negativity than host metal atom offers the best comprehensive performance.     

基于Cu/SiO_x/Al结构的阻变存储器多值特性及机理的研究

采用氧化硅材料构建了Cu/SiOx/Al的三明治结构阻变存储器件.用半导体参数分析仪对其阻变特性进行测量,结果表明其具有明显的阻变特性,并且通过调节限制电流,得到了四个稳定的阻态,各相邻阻态的电阻比大于10,并且具有良好的数据保持能力.在不同温度条件下对各个阻态进行电学测试及拟合,明确了不同阻态的电子传输机理不尽相同:阻态1和阻态2为欧姆传导机制,阻态3为P-F(Pool-Frenkel)发射机制,阻态4为肖特基发射机制.根据电子传输机制,建立了铜细丝导电模型并对Cu/SiOx/Al阻变存储器件各个阻态的电致阻变机制进行解释.     

Ni/HfO_2/Pt阻变单元特性与机理的研究

研究了Ni/HfO2(10 nm)/Pt存储单元的阻变特性和机理.该器件具有forming-free的性质,还表现出与以往HfO2(3 nm)基器件不同的复杂的非极性阻变特性,并且具有较大的存储窗口值(105).存储单元的低阻态阻值不随单元面积改变,符合导电细丝阻变机理的特征.采用X射线光电子能谱仪分析器件处于低阻态时的阻变层HfO2薄膜的化学组分以及元素的化学态,结果表明,Ni/HfO2/Pt阻变存储器件处于低阻态时的导电细丝是由金属Ni导电细丝和氧空位导电细丝共同形成的.     

Asymmetric reversible diode-like resistive switching behaviors in ferroelectric BaTiO3 thin films

In this work, the resistive switching behaviors of ferroelectrictric BaTiO3/La0.67Sr0.33MnO3 .heterostructures de- posited by pulsed laser deposition are investigated. The BaTiO3 films show both well-established P-E hysteresis loops, and asymmetric reversible diode-like resistive switching behaviors, involving no forming process. It is found that both the ON/OFF ratio and the stability of resistive switching are substantially dependent on operation voltage （Vmax）. At a Vmax of 15 V, a large ON/OFF resistance ratio above 1000 is obtained at a Vmax of 15 V, which is able to maintain stability up to 70-switching cycles. The above resistive switching behaviors can be understood by modulating interface Schottky barriers as demonstrated by I-V curve fitting.     

Nonvolatile Resistive Switching and Physical Mechanism in LaCrO_3 Thin Films

Polycrystalline LaCrO_3(LCO) thin films are deposited on Pt/Ti/SiO_2/Si substrates by pulsed laser deposition and used as the switching material to construct resistive random access memory devices. The unipolar resistive switching(RS) behavior in the Au/LCO/Pt devices exhibits a high resistance ratio of ~104 between the high resistance state(HRS) and low resistance state(LRS) and exhibits excellent endurance/retention characteristics.The conduction mechanism of the HRS in the high voltage range is dominated by the Schottky emission, while the Ohmic conduction dictates the LRS and the low voltage range of HRS. The RS behavior in the Au/LCO/Pt devices can be understood by the formation and rupture of conducting filaments consisting of oxygen vacancies,which is validated by the temperature dependence of resistance and x-ray photoelectron spectroscopy results.Further analysis shows that the reset current I_R and reset power P_R in the reset processes exhibit a scaling law with the resistance in LRS(R_0), which indicates that the Joule heating effect plays an essential role in the RS behavior of the Au/LCO/Pt devices.     

Impact of amorphous titanium oxide film on the device stability of Al/TiO2/Al resistive memory

We have investigated the role of amorphous titanium oxide film in the reliable bipolar resistive switching of Al/TiO₂/Al resistive random access memory devices. As TiO₂ deposition temperature decreased, a more stable endurance characteristic was obtained. We proposed that the degradation of the bipolar resistive switching property of Al/TiO₂/Al devices is closely related to the imperfect migration of oxygen ions between the top insulating interface layer and the oxygen-deficient titanium oxide during the set and reset operations. In addition, the dependence of the TiO₂ film thickness on the switching property was also studied. As the thickness of the film increased, a reduction in the resistance of the high resistance state rapidly appeared. We attribute the improved endurance performance of thin and low-temperature grown TiO₂ devices to the amorphous state with a low film density.     

基于Au/TiO_2/FTO结构忆阻器的开关特性与机理研究

采用简单的一步水热法在FTO导电玻璃上外延生长了锐钛矿TiO_2纳米线,制备了具有Au/TiO_2/FTO器件结构的锐钛矿TiO_2纳米线忆阻器,系统研究了器件的阻变开关特性和开关机理.结果表明,Au/TiO_2/FTO忆阻器具有非易失的双极性阻变开关特性.同时,在103s的时间内,器件在0.1 V的电阻开关比始终保持在20以上,表明器件具有良好的非易失性.此外,器件在低阻态时遵循欧姆导电特性,而在高阻态时则满足陷阱控制的空间电荷限制电流传导机制,同时提出了基于氧空位导电细丝形成与断开机制的阻变开关模型.研究结果表明Au/TiO_2/FTO忆阻器将是一种很有发展潜力的下一代非易失性存储器.     

A simulation study of the e+/e－ sensitivity of a low resistive phosphate glasselectrode in a RPC using GEANT MC

The resistivity of conventional glass is quite high and is unacceptable in a high rate environment. Low resistive glass-electrodes could be a solution for this problem. The present study reports the e^＋/e^- simulation results of an RPC detector made from low resistive phosphate glass electrodes. The detailed geometrical configuration of the content materials which are the essential components of the glass of the RPC detector have been created with the GEANT4 simulation code. Two different types of particle sources, i.e. for e^＋/e^- , have been located on the detectors surface to evaluate the performance of the phosphate glass RPC. Both of the particles have been simulated as a function of their respective energies in the range of 0.1 MeV 1.0 GeV. The present simulation work has shown that the resistive electrode plays an important role for the particle production in the RPC configuration.     

Atomic crystals resistive switching memory

Facing the growing data storage and computing demands, a high accessing speed memory with low power and non volatile character is urgently needed. Resistive access random memory with 4F~2 cell size, switching in sub-nanosecond cycling endurances of over 10~(12) cycles, and information retention exceeding 10 years, is considered as promising nex generation non-volatile memory. However, the energy per bit is still too high to compete against static random acces memory and dynamic random access memory. The sneak leakage path and metal film sheet resistance issues hinder th further scaling down. The variation of resistance between different devices and even various cycles in the same device hold resistive access random memory back from commercialization. The emerging of atomic crystals, possessing fin interface without dangling bonds in low dimension, can provide atomic level solutions for the obsessional issues. Moreove the unique properties of atomic crystals also enable new type resistive switching memories, which provide a brand-new direction for the resistive access random memory.     

Resistive switching behaviors of Cu/TaOx/TiN device with combined oxygen vacancy/copper conductive filaments

Forming-free and self-compliant bipolar resistive switching is observed in Cu/TaO_x/TiN conductive bridge random access memory. Generally, Pt has been investigated as an inert electrode. However, Pt is not desirable material in current semiconductor industry for mass production. In this study, all electrodes are adapted to complementary metal-oxide-semiconductor compatible materials. The self-compliant resistive switching is achieved via usage of TiN bottom electrode. Also, dissolved Cu ions in TaO_x lead to forming-free resistive switching behavior. The resistive switching mechanism is formation and rupture of combined oxygen vacancy/metallic copper conductive filament. We propose that Cu/TaO_x/TiN is a promising candidate for a conductive bridge random access memory structure.     

High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions

4H-SiC junction barrier Schottky (JBS) diodes with a high-temperature annealed resistive termination extension (HARTE) are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 m ·cm2 with a total active area of 2.46×10-3 cm2 . Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250℃ in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9×10-5 A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure.     

Resistance switching memory in perovskite oxides

The resistance switching behavior has recently attracted great attentions for its application as resistive random access memories (RRAMs) due to a variety of advantages such as simple structure, high-density, high-speed and low-power. As a leading storage media, the transition metal perovskite oxide owns the strong correlation of electrons and the stable crystal structure, which brings out multifunctionality such as ferroelectric, multiferroic, superconductor, and colossal magnetoresistance/electroresistance effect, etc. The existence of rich electronic phases, metal–insulator transition and the nonstoichiometric oxygen in perovskite oxide provides good platforms to insight into the resistive switching mechanisms.     

氧分压对Ni/HfO_x/TiN阻变存储单元阻变特性的影响

采用射频磁控溅射的方法,基于不同氧分压制备的氧化铪构建了Ni/HfO_x/TiN结构阻变存储单元.研究发现,随着氧分压的增加,薄膜表面粗糙度略有降低;另一方面,阻变单元功耗降低,循环耐受性能可达10~3次,且转变电压分布的一致性得到改善.结合电流-电压曲线线性拟合结果及外加温度测试探究了器件的转变机理,得出在低阻态的传导机理为欧姆传导机理,在高阻态的传导机理为肖特基发射机理,并根据氧空位导电细丝理论,对高低阻态的阻变机理进行了详细的理论分析.     

Enhanced resistance switching stability of transparent ITO/TiO2/ITO sandwiches

We report that fully transparent resistive random access memory(TRRAM) devices based on ITO/TiO2/ITO sandwich structure,which are prepared by the method of RF magnetron sputtering,exhibit excellent switching stability.In the visible region(400-800 nm in wavelength) the TRRAM device has a transmittance of more than 80%.The fabricated TRRAM device shows a bipolar resistance switching behaviour at low voltage,while the retention test and rewrite cycles of more than 300,000 indicate the enhancement of switching capability.The mechanism of resistance switching is further explained by the forming and rupture processes of the filament in the TiO 2 layer with the help of more oxygen vacancies which are provided by the transparent ITO electrodes.     

Effect of passive structure and toroidal rotation on resistive wall mode stability in the EAST tokamak

If βN exceeds no-wallβN, the plasma will be unstable because of external kink and resistive wall mode(RWM). In this article, the effect of the passive structure and the toroidal rotation on the RWM stability in the experimental advanced superconducting tokamak(EAST) are simulated with CHEASE and MARS codes. A model using a one-dimensional(1D)surface to present the effect of the passive plate is proved to be credible. The no wall βN limit is about 3li, and the ideal wall βN limit is about 4.5li on EAST. It is found that the rotation near the q = 2 surface and the plasma edge affects the RWM more.     

Study of neutron response for two hybrid RPC setups using the GEANT4 MC simulation approach

The present article describes a detailed neutron simulation study in the energy range 10^-10 MeV to 1.0 GeV for two different RPC configurations. The simulation studies were taken by using the GEANT4 MC code. Aluminum was utilized on the GND and readout strips for the （a） Bakelite-based and （b） glass-based RPCs. For the former type of RPC setup the neutron sensitivity for the isotropic source was Sn = 2.702 × 10^-2 at En = 1.0 GeV, while for the latter type of RPC, the neutron sensitivity for the same source was evaluated as Sn = 4.049 × 10^-2 at En = 1.0 GeV. These results were further compared with the previous RPC configuration in which copper was used for ground and pickup pads. Additionally A1 was employed at （GND＋strips） of the phosphate glass RPC setup and compared with the copper-based phosphate glass RPC. Good agreement with sensitivity values was obtained with the current and previous simulation results.