Fabrication of superconducting Nb N meander nanowires by nano-imprint lithography

Superconducting nanowire single photon detector(SNSPD), as a new type of superconducting single photon detector(SPD), has a broad application prospect in quantum communication and other fields. In order to prepare SNSPD with high performance, it is necessary to fabricate a large area of uniform meander nanowires, which is the core of the SNSPD. In this paper, we demonstrate a process of patterning ultra-thin Nb N films into meander-type nanowires by using the nanoimprint technology. In this process, a combination of hot embossing nano-imprint lithography(HE-NIL) and ultraviolet nano-imprint lithography(UV-NIL) is used to transfer the meander nanowire structure from the NIL Si hard mold to the Nb N film. We have successfully obtained a Nb N nanowire device with uniform line width. The critical temperature(Tc) of the superconducting Nb N meander nanowires is about 5 K and the critical current(Ic) is about 3.5 μA at 2.5 K.     

Structural and superconducting properties of ion beam sputtered Nb thin films and Nb/Cu bilayers

We present the results of a study of structural and superconducting properties of polycrystalline Nb thin films (200 Å, 300 Å, 400 Å, 700 Å and 1000 Å) and Nb/Cu bilayers (300 Å/300 Å and 400 Å/300 Å) prepared on Si substrates by ion beam sputtering at room temperature. The thicknesses, roughnesses at the surfaces and interfaces were determined by X-ray reflectivity whereas the grain sizes were determined from grazing incidence X-ray diffraction and transmission electron microscopic studies. The superconducting transition temperature (T_C) of Nb thin films are smaller than T_C of bulk Nb. The Nb-200 Å sample does not show T_C down to 2.3 K. The average size of the grains varies from 42 Å for Nb-200 Å sample to 69 Å for Nb-1000 Å sample. Our results show that the T_C in these polycrystalline films is not only limited by its thickness but also by the size of the grains. The Nb films deposited in situ on the Cu layer (Nb/Cu) show a marginal increase in average sizes of the grains as compare to their respective values in Nb films of same thicknesses. As a result a marginal increase in T_C of these films is also observed. The maximum decrease in T_C due to oxygen intake during deposition should be about 0.5 K from its bulk value (9.28 K). We have attributed the large decrease in T_C in our case on the basis of decrease in the Debye temperature and density of states at the Fermi level for Nb thin films as compared to their respective values for bulk Nb.     

Influence of thickness,width and temperature on critical current density of Nb thin film structures

The density of critical currents j_C in Nb thin films with thickness smaller than 15 nm and width between 100 nm and 10 μm has been measured in a wide temperature range. We have found that the temperature dependencies of j_C in sub-micrometer wide bridges at 0.7T_C < T < T_C are well described by the Ginzburg–Landau de-pairing critical current. In wider bridges already at T < 0.9T_C the j_C value is significantly reduced due to the penetration and de-pinning of magnetic vortices.     

ANSYS仿真激光切割氧化锌纳米线

 以脉冲高斯激光为光源,直径在500 nm～1 000 nm、长度10 μm的一维氧化锌材料为对象,采用有限元分析软件ANSYS建立了激光切割氧化锌纳米线的热力学仿真模型,并采用生死单元技术对超过熔点的单元进行处理,得到不同激光工作参数和氧化锌纳米线直径下的温度分布场和切割形貌。讨论了纳米线直径和聚焦光斑相对纳米线的位移对切割的影响,纳米线直径越大允许的激光离焦量越小;当无离焦或负离焦较小时,切割纳米线产生的形貌较为理想。     

Synthesis and field emission properties of GaN nanowires

Gallium nitride (GaN) nanowires grown on nickel-coated n-type Si (1 0 0) substrates have been synthesized using chemical vapor deposition (CVD), and the field emission properties of GaN nanowires have been studied. The results show that (1) the grown GaN nanowires, which have diameters in the range of 50-100 nm and lengths of several micrometers, are uniformly distributed on Si substrates. The characteristics of the grown GaN nanowires have been investigated using X-ray diffraction (XRD) and transmission electron microscopy (TEM), and through these investigations it was found that the GaN nanowires are of a good crystalline quality (2) When the emission current density is 100 μA/cm², the necessary electric field is an open electric field of around 9.1 V/μm (at room temperature). The field enhancement factor is ∼730. The field emission properties of GaN nanowires films are related both to the surface roughness and the density of the nanowires in the film.     

尺寸相关的弹性常数对应变硅纳米线电学性质的影响

从Keating模型出发,基于离散化思想建立了计算单晶硅纳米线弹性常数和杨氏模量的半连续原子晶格力学模型. 从微扰理论和形变势理论出发,采用有限差分方法建立了计算不同晶向应变硅纳米线价带结构的数值模型. 结合上述的两个计算模型,进而应用经典弹道传输模型研究了轴向应力和弹性常数对p型硅纳米线弹道晶体管电学特性的影响. 研究结果表明,硅纳米线的弹性常数和杨氏模量呈现尺寸效应,该结果与分子动力学的模拟结果具有很好的一致性. 同时发现尺寸相关的弹性常数对硅纳米线晶体管输运电流的影响强烈依赖于单轴应力对输运电流的影 关键词： 应变硅纳米线 弹性常数 弹道电流 价带结构模型     

二氧化钒薄膜的低温制备及其性能研究

针对VO₂薄膜在微测辐射热计上的应用，采用射频反应溅射法，在室温下制备氧化钒薄膜；研究了氧分压对薄膜沉积速率、电学性质及成分的影响.通过调节氧分压，先获得成分接近VO₂的非晶化薄膜，再在400℃空气中氧化退火，便可制得高电阻温度系数，低电阻率的VO₂薄膜，电阻温度系数约为-4%/℃，薄膜方块电阻为R_□为100—300kΩ；薄膜在室温下沉积，400℃下退火的制备方法与微机电加工(micro electromechanic 关键词： 二氧化钒 电阻温度系数 氧分压 射频反应溅射法     

Fabrication of substrate-free double-side emitting flexible device based on silver nanowire-polymer composite electrode

Flexible light emitting diodes are a promising component for future electronic devices, but require a simple structure and fast fabrication method. Organic light emitting diodes are a viable option as they are lightweight, thin, and flexible. However, they currently have costly fabrication procedures, complicated structures, and are sensitive to water and oxygen, which hinder widespread application. Here, we present a novel approach to fabricate flexible light emitting devices by employing Ag nanowire/polymer composite electrodes and ZnS phosphor particles. The composite electrode was fabricated using inverted layer processing, and used as both a bottom electrode and a dielectric layer. The high mechanical stability of the composite allowed the device to be free standing and mechanically flexible, eliminating the need for any additional support. Using Ag nanowires in both the top and bottom electrodes made a double-sided light emitting device that could be applied to wearable lightings or flexible digital signages.     

MAX相Nb2SnC和Nb2SnN的力学和热力学性质的第一性原理计算

利用基于密度泛函理论的第一性原理,在广义梯度近似下研究了MAX相Nb₂SnC和Nb₂SnN的力学、晶格动力学、电子以及热力学性质.通过弹性常数和声子的计算,研究了Nb₂SnC和Nb₂SnN两种结构的力学稳定性和动力学稳定性;通过对Nb₂SnC和Nb₂SnN的力学性质计算,证明了它们均具有较高的体积模量和剪切性,并且说明了Nb₂SnC和Nb₂SnN是具有弹性各向异性的韧性材料.此外,通过计算电子能带结构和态密度,研究了Nb₂SnC和Nb₂SnN的电子性质和成键性质,结果表明,两个化合物均具有金属导电性和较强的共价键,而且Nb₂SnN比Nb₂SnC具有更强的金属导电性.最后利用声子色散曲线预测了热容、自由能、焓和熵等热力学性质,结果标明,计算出的熵、焓和自由能值变化符合热力学第三定律.     

Research of the use of silver nanowires as a current spreading layer on vertical-cavity surface-emitting lasers

Silver nanowire(AgNW) film was proposed to apply on the surface of the vertical-cavity surface-emitting lasers(VCSELs) with large aperture in order to obtain a uniform current distribution in the active region and a better optical beam quality.Optimization of the AgNW film was carried out with the sheet resistance of 28.4 Ω/sq and the optical transmission of 94.8% at 850 nm.The performance of VCSELs with and without AgNW film was studied.When the AgNW film was applied to the surface of VCSELs,due to its better current spreading effect,the maximum output optical power increased from 23.4 mW to 24.4 mW,the lasing wavelength redshift decreased from 0.085 nm/mA to 0.077 nm/mA,the differential resistance decreased from 23.95 Ω to 21.13 Ω,and the far field pattern at 50 mA decreased from 21.6° to 19.2°.At the same time,the near field test results showed that the light in the aperture was more uniform,and the far field exhibited a better single peak characteristic.Various results showed that VCSELs with AgNW on the surface showed better beam quality.     

基于二阶矢量位的矩形截面回折线圈阻抗和脉冲磁场的解析建模与计算

本文基于二阶矢量位建立了回折线圈的阻抗和磁场计算的解析模型,并提出了计算磁场脉冲响应的方法.根据回折线圈用于涡流检测和电磁超声检测时的通用模型,将回折线圈的阻抗和磁场计算问题转化为多个单匝矩形线圈阻抗和磁场的叠加问题.基于二阶矢量位和时谐电磁场方程,推导了回折线圈的频域标势表达式;利用标势与矢量磁位和磁通密度间的关系,推导了计算区域的磁通密度和式样表面涡流的频域解析计算公式;通过计算线圈的感应电势和阻抗变化表达式,得到了线圈阻抗的频域解析表达式;采用FFT-IFFT方法计算了脉冲磁场的时域响应.以一双层双 关键词： 无损检测 回折线圈 二阶矢量位 解析建模     

Fabrication and characterization of polycrystalline silicon nanowires with silver-assistance by electroless deposition

Single crystal silicon wafers are widely used as the precursors to prepare silicon nanowires by employing a silver-assisted chemical etching process. In this work, we prepared polycrystalline silicon nanowire arrays by using solar-grade multicrystalline silicon wafers. The chemical composition and bonding on the surface of silicon nanowire arrays were characterized by Fourier Transform Infrared spectroscope, and X-ray photoelectron spectroscope. The photoluminescence spectra of silicon nanowires show red light emissions centered around 700 nm. Due to the passivation effect of Si dangling bonds by concentrated HNO₃ aqueous solution, the photoluminescence intensities are improved by 2 times. The influences of surface chemical states on the wettability of silicon nanowire arrays were also studied. We obtained a superhydrophobic surface on the as-etched silicon nanowire arrays without surface modification with any organic low-surface-energy materials, and realized the evolution from superhydrophobicity to superhydrophilicity via surface modifications with HNO₃ solutions.     

铌合金电子结构及其高温氧化行为

为了从电子层面揭示Nb合金高温氧化的物理本质,采用递归法计算了Nb合金的电子态密度、原子镶嵌能、亲和能等电子结构参数,探索Nb合金高温氧化机理.研究表明:氧在Nb中具备较高的扩散速率和溶解度,且氧与Nb较易发生反应,生成氧化物,这使Nb的抗高温氧化性较差.原子镶嵌能的计算结果表明,合金元素Ti,Si,Cr在基体中稳定性较低,易向Nb合金表面扩散,形成富Ti,Si,Cr的表层.合金表层中氧与Nb,Ti,Si,Cr间具有较大亲和性,可以生成相应的氧化物,形成对合金具有保护作用的氧化膜. 关键词： 递归法 高温氧化 Nb合金     

A new model analysis of the third harmonic voltage in inductive measurement for critical current density of superconducting films

The critical current density J c is one of the most important parameters of high temperature superconducting films in superconducting applications,such as superconducting filter and superconducting Josephson devices.This paper presents a new model to describe inhomogeneous current distribution throughout the thickness of superconducting films applying magnetic field by solving the differential equation derived from Maxwell equation and the second London equation.Using this model,it accurately calculates the inductive third-harmonic voltage when the film applying magnetic field with the inductive measurement for J c.The theoretic curve is consistent with the experimental results about measuring superconducting film,especially when the third-harmonic voltage just exceeds zero.The J c value of superconducting films determined by the inductive method is also compared with results measured by four-probe transport method.The agreements between inductive method and transport method are very good.     

ZnO纳米线二极管发光器件制备及特性研究

运用液相法生长成ZnO纳米线薄膜，并利用肖特基型异质结的发光原理，构造成功肖特基型ZnO纳米线二极管发光器件.在大于6V直流电压驱动下，观察到近紫外波段392nm处和可见光波段525nm的发射谱带.从单向导电特性及ZnO纳米线材料的能带结构等方面探讨了该种器件的电致发光机理.     

ZnO纳米线二极管发光器件制备及特性研究

运用液相法生长成ZnO纳米线薄膜,并利用肖特基型异质结的发光原理,构造成功肖特基型ZnO纳米线二极管发光器件.在大于6V直流电压驱动下,观察到近紫外波段392nm处和可见光波段525nm的发射谱带.从单向导电特性及ZnO纳米线材料的能带结构等方面探讨了该种器件的电致发光机理. 关键词： ZnO纳米线 肖特基二极管 电致发光     

Fe100－xPdx合金纳米线阵列的制备及其磁性研究

利用直流电沉积法在多孔阳极氧化铝模板中制备出了一系列Fe_100-xPd_x磁性纳米线阵列. Pd的增加使纳米线的总体磁性降低，各向异性和矫顽力也发生了较大的变化. 当Pd含量高达x=30时，纳米线仍有相当高的矫顽力(7.48 kA/m)和较明显的各向异性，但当Pd的含量增加到50%时，纳米线的易磁化方向由平行线的方向反转到垂直线的方向. 实验证明，这是由于在Fe₈₀Pd₂₀和Fe₇₀Pd₃₀中连续的磁性相在Fe₅₀Pd₅₀纳米线中变成了与非磁性相相互间隔的非连续片状结构. 片状磁性相的形状各向异性使易磁化方向转变到垂直纳米线轴的方向. 从生长动力学的角度对Fe₅₀Pd₅₀纳米线中这种片状的形成进行了解释. 关键词： 纳米线 电化学沉积 磁性     

气体吸附对硅锗异质结纳米线电子结构与光学性质的影响

基于密度泛函理论体系下的广义梯度近似(GGA),采用第一性原理方法探讨了沿[112]晶向的硅锗异质结纳米线作为气体传感器检测CO,CO₂和Cl₂的能力,着重计算了其吸附气体分子前后的吸附能、能带结构与光学性质.几何结构优化计算表明：不同硅锗组分的[112]晶向的硅锗纳米线对CO,CO₂和Cl₂分子的吸附能的绝对值在0.001 eV至1.36 eV之间,其中Si₂₄Ge₃₆H₃₂对CO₂气体的吸附能最大,气敏性能最好.能带结构计算表明：吸附CO和CO₂分子的[112]晶向硅锗纳米线能带的简并度明显减小,带隙变化较小;而吸附Cl₂分子后的价带顶与导带底之间产生了杂质能级使其带隙减小.光学性质计算表明：Si₂₄Ge₃₆H₃₂纳米线吸附CO, CO₂和Cl₂分子后的光学...