Interfacial and electrical properties of HfAIO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation Interfacial and electrical properties of HfAIO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation Interfacial and electrical properties of HfAIO/GaSb metal-oxide-semiconductor capacitors with sulfur passivationInterfacial and electrical properties of HfAIO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation

Interfacial and electrical properties of HfA10/GaSb metal-oxide-semiconductor capacitors （MOSCAPs） with sulfur passivation were investigated and the chemical mechanisms of the sulfur passivation process were carefully studied. It was shown that the sulfur passivation treatment could reduce the interface trap density Dit of the HfAIO/GaSb interface by 35% and reduce the equivalent oxide thickness （EOT） from 8 nm to 4 nm. The improved properties are due to the removal of the native oxide layer, as was proven by x-ray photoelectron spectroscopy measurements and high-resolution cross-sectional transmission electron microscopy （HRXTEM） results. It was also found that GaSb-based MOSCAPs with HfA10 gate dielectrics have interfacial properties superior to those using HfO2 or A1203 dielectric layers.     

Photoemission properties of GaAs （100） β2（2×4） and GaAs （100） （4×2） reconstruction phases

Using the first-principles plane-wave pseudopotential method, based on the density function theory, the electron structure and optical properties of GaAs （100） β2（2×4） and GaAs （100） （4×2） reconstructions are calculated. The formation energy of As-richβ2 （2 ×4） reconstruction is minus and the formation energy of Ga-rich （4×2） reconstruction is positive; As-rich β2（2×4） reconstruction is stable and Ga-rich （4×2） reconstruction is unstable. Ga-rich （4×2） reconstruction owns lower work function. The electrons at two reconstructions both move into the bulk and form a band-binding region. Both the absorption and the refleetivity of As-rich β2（2×4） reconstruction are smaller than the Ga-rich （4× 2） reconstruction. As- rich β2（2×4） reconstruction is more benefit for the movement of photos through the surface to emit photoelectrons.     

High-mobility germanium p-MOSFETs by using HCI and （NH4）2S surface passivation

To achieve a high-quality high-κ/Ge interfaces for high hole mobility Ge p-MOSFET applications, a simple chemical cleaning and surface passivation scheme is introduced, and Ge p-MOSFETs with effective channel hole mobility up to 665 cm2/V.s are demonstrated on a Ge （111） substrate. Moreover, a physical model is proposed to explain the dipole layer formation at the metal-oxide-semiconductor （MOS） interface by analyzing the electrical characteristics of HCl- and （NH4）2S-passivated samples.     

Effects of （LiCe） co-substitution on the structural and electrical properties of CaBi2Nb209 ceramics

The piezoelectric,dielectric,and ferroelectric properties of the(LiCe) co-substituted calcium bismuth niobate(CaBi2Nb2O9,CBNO) are investigated.The piezoelectric properties of CBNO ceramics are significantly enhanced and the dielectric loss tan δ decreased.This makes poling using(LiCe) co-substitution easier.The ceramics(where represents A-site Ca2+ vacancies,possess a pure layered structure phase and no other phases can be found.The Ca0.88(LiCe)0.04 0.04Bi2Nb2O9 ceramics possess optimal piezoelectric properties,with piezoelectric coefficient(d 33) and Curie temperature(TC) found to be 13.3 pC/N and 960 C,respectively.The dielectric and piezoelectric properties of the(LiCe) co-substituted CBNO ceramics exhibit very stable temperature behaviours.This demonstrates that the CBNO ceramics are a promising candidate for ultrahigh temperature applications.     

First-principle investigation of the electronic and magnetic properties of PbMn（SO4）2

The magnetic properties of oxide PbMn(SO₄)₂ consisted of MnO₆ octahedra which connected with each other through SO₄ tetrahedra, are well studied in experiments. In this paper, we explored its interesting electronic and magnetic properties with first-principle calculations. Our results show that all Mn ions have high spin states, namely, S = 5/2, and the magnetic couplings between NN and NNN are antiferromagnetic, which agree well with the experimental results. Besides, the surprising results of spin exchange interactions between the NN and NNN are excellently explained with extended Hückel tight-binding calculations.     

Stereodynamics study of the H′（^2S） ＋ NH（X^3∑-） 〉 N（4S） ＋ H2 reaction

The stereodynamics and reaction mechanism of the H′（^2S） ＋ NH （X^3∑^-） → N（^4S） ＋ H2 reaction are thoroughly studied at collision energies in the 0.1 eV-1.0 eV range using the quasiclassical trajectory （QCT） on the ground 4A″ potential energy surface （PES）. The distributions of vector correlations between products and reagents P（φr）, P（φr） and P（φr,φr） are presented and discussed. The results indicate that product rotational angular momentum j′ is not only aligned, but also oriented along the direction perpendicular to the scattering plane; further, the product H2 presents different rotational polarization behaviors for different collision energies. Furthermore, four polarization-dependent differential cross sections （PDDCSs） of the product He are also calculated at different collision energies. The reaction mechanism is analyzed based on the stereodynamics properties. It is found that the abstraction mechanism is appropriate for the title reaction.     

Structural, magnetic, electronic, and elastic properties of face-centered cubic PuHx （x=2, 3） ： GGA （LSDA） ＋ U ＋ SO

We perform first-principles calculations to investigate the structural, magnetic, electronic, and mechanical properties of face-centered cubic (fcc) PuH 2 and fcc PuH 3 using the full potential linearized augmented plane wave method (FP-LAPW) with the generalized gradient approximation (GGA) and the local spin density approximation (LSDA) taking account of both relativistic and strong correlation effects. The optimized lattice constant a0 = 5.371  for fcc PuH2 and a0 = 5.343  for fcc PuH3 calculated in the GGA + sp (spin polarization) + U (Hubbard parameter) + SO (spin-orbit coupling) scheme are in good agreement with the experimental data. The ground state of fcc PuH3 is found to be slightly ferromagnetic. Our results indicate that fcc PuH2 is a metal while fcc PuH3 is a semiconductor with a band gap about 0.35 eV. We note that the SO and the strong correlation between localized Pu 5f electrons are responsible for the band gap of fcc PuH3 . The bonds for PuH2 have mainly covalent character while there are covalent bonds in addition to apparent ionicity bonds for PuH3 . We also predict the elastic constants of fcc PuH2 and fcc PuH3 , which were not observed in the previous experiments.     

Comparative study of the electrical properties of Au/n-Si （MS） and Au/Si3N4/n-Si （MIS） Schottky diodes

In this paper,the electrical parameters of Au/n-Si(MS) and Au/Si3N4/n-Si(MIS) Schottky diodes are obtained from the forward bias current-voltage(I-V) and capacitance-voltage(C-V) measurements at room temperature.Experimental results show that the rectifying ratios of the MS and MIS diodes at±5 V are found to be 1.25 × 103 and 1.27 × 104,respectively.The main electrical parameters of the MS and MIS diodes,such as the zero-bias barrier height(ΦBo) and ideality factor(n),are calculated to be 0.51eV(I-V),0.53eV(C-V),and 4.43,and 0.65eV(I-V),0.70eV(C-V),and 3.44,respectively.In addition,the energy density distribution profile of the interface states(Nss) is obtained from the forward bias I-V,and the series resistance(Rs) values for the two diodes are calculated from Cheung's method and Ohm's law.     

Density functional calculations on the geometric structure and properties of the 3d transition metal atom doped endohedral fullerene M@C20F20（M=Sc-Ni）

This paper uses the generalised gradient approximation based on density functional theory to analyse the geometric structure and properties of the 3d transition metal atom doped endohedral fullerene M@C20F20(M=Sc-Ni).The geometric optimization shows that the cage centre is the most stable position for M,forming the structure named as M@C 20 F 20-4.The inclusion energy,zero-point energy,and energy gap calculations tell us that Ni@C 20 F 20-4 should be thermodynamically and kinetically stablest.M@C 20 F 20-4(M = Sc-Co) possesses high magnetic moments varied from 1 to 6 μ B,while Ni@C 20 F 20-4 is nonmagnetic.The Ni-C bond in Ni@C 20 F 20-4 contains both the covalent and ionic characters.     

Elastic scattering of two H（^2Sg） and N（^4Su） atoms at low temperatures and accurate spectroscopic parameters of NH （X^3∑^-） radical

This paper reports that the interaction potential for the X3Z- state of NH radical is constructed at the CCSD（T）/ cc-PV6Z level of theory. Using this potential, this paper calculates the spectroscopic parameters （De, Re, ωe, ωeχe, αe and Be） and their values are of 3.578eV, 0.10368nm, 3286.833cm^-1, 78.433cm^-1, 0.6469cm^-1 and 16.6735cm^-1 respectively, which are in excellent agreement with the experiments. Then the total of 14 vibrational states has been found when J=0 by solving the radial Schrodinger equation of nuclear motion. For each vibrational state, the vibrational manifolds are reported for the first time. And last, the total cross sections, s-wave, p-wave and d-wave cross sections are computed for the elastic collisions between two ground-state atoms （hydrogen and nitrogen） at low temperatures. It finds that the total elastic cross sections are dominated by s-wave scattering when the collision energy is below 10^-6a.u. The pronounced shape resonance is found at energy of 6.1 × 10^-6a.u. Calculations have shown that the shape resonance comes from the p-wave contributions.     

高迁移率Ge沟道器件研究进展

高迁移率Ge沟道器件由于其较高而且更对称的载流子迁移率, 成为未来互补型金属-氧化物-半导体(CMOS) 器件极有潜力的候选材料. 然而, 对于Ge基MOS器件, 其栅、源漏方面面临的挑战严重影响了Ge基MOS 器件性能的提升, 尤其是Ge NMOS器件. 本文重点分析了Ge基器件在栅、源漏方面面临的问题, 综述了国内外研究者们提出的不同解决方案, 在此基础上提出了新的技术方案. 研究结果为Ge基MOS 器件性能的进一步提升奠定了基础.     

Mobility enhancement of strained GaSb p-channel metal oxide semiconductor field-effect transistors with biaxial compressive strain

Various biaxial compressive strained GaSb p-channel metal–oxide–semiconductor field-effect transistors(MOSFETs)are experimentally and theoretically investigated. The biaxial compressive strained GaSb MOSFETs show a high peak mobility of 638 cm~2/V·s, which is 3.86 times of the extracted mobility of the fabricated GaSb MOSFETs without strain.Meanwhile, first principles calculations show that the hole effective mass of Ga Sb depends on the biaxial compressive strain.The biaxial compressive strain brings a remarkable enhancement of the hole mobility caused by a significant reduction in the hole effective mass due to the modulation of the valence bands.     

n型金属氧化物半导体场效应晶体管噪声非高斯性研究

基于n型金属氧化物半导体场效应晶体管（nMOSFET）噪声的数涨落模型,采用高阶统计量双相干系数平方和研究了nMOSFET噪声的非高斯性.通过对nMOSFET实际测试噪声的分析,发现nMOSFET器件噪声存在非高斯性;小尺寸器件噪声的非高斯性强于大尺寸器件;在器件的强反型线性区,其非高斯性随着漏压的增加而增加.文中还通过蒙特卡罗模拟和中心极限定理理论对nMOSFET噪声的非高斯性作了深入的探讨. 关键词： 噪声 非高斯性 n型金属氧化物半导体场效应晶体管 氧化层陷阱     

The electrical properties of semiconductor/metal,semiconductor/liquid,and semiconductor/conducting polymer contacts

Critical comparisons are drawn between the basic electrical properties of semiconductor/metal, semiconductor/liquid, and semiconductor/conducting polymer junctions. A theoretical model is developed to describe the basic current-voltage properties of semiconductor contacts, with emphasis on the contrasts between ideal and observed behavior. Using the concepts from this model, the characteristics of a variety of semiconductor contacts are evaluated. The discussion focuses on the following semiconductors: Si, GaAs, InP, and II-VI compounds based on the Cd-(chalcogenide) materials.     

Investigation of laterally single-diffused metal oxide semiconductor (LSMOS) field effect transistor

We propose a distinct approach to implement a laterally single diffused metal-oxide-semiconductor (LSMOS) FET with only one impurity doped p-n junction. In the LSMOS, a single p-n junction is first created using lateral dopant diffusion. The channel is formed in the p region of the p-n junction and the n region acts as the drift region. Two distinct metals of different work function are used to form the “n⁺” source/drain regions and “p⁺” body contact using the charge plasma concept. We demonstrate that the LSMOS is similar in performance to a laterally double diffused metal-oxide-semiconductor (LDMOS) although it has only one impurity doped p-n junction. The LSMOS exhibits a breakdown voltage of ∼50.0 V, an average ON-resistance of 48.7 mΩ-mm² and a peak transconductance of 53.6 μS/μm similar to that of a comparable LDMOS.     

金属氧化物对Ca(OH)_2脱硫影响的研究

1前言鉴于钙基吸收剂干法烟气脱硫技术在脱硫产物处理等方面的优势，本文开展了Ca（O）。中低温干燥状态下的反应特性、活化能及其影响因素的试验研究，以求进一步增强对其反应特性的了解并弄清金属氧化物的作用。2装置及样品试验装置如图1示，采用硫化床形式以强化吸收剂与气相反应物之间传质。床层温度由理入反应器内的热电偶测出并由温控仅控制。SOZ气体经稀释气体稀释并混合、预热后流入反应管进行反应，反应后气体由尾部的SOZ吸收水箱吸收后排入大气。冷却室可防止水蒸气进入气体分析仪。通过记录SOZ浓度随时间的变化规律即可得到…     

超深亚微米互补金属氧化物半导体器件的剂量率效应

对0.18 μm互补金属氧化物半导体(CMOS)工艺的N型金属氧化物半导体场效应晶体管(NMOSFET)及静态随机存储器(SRAM)开展了不同剂量率下的电离总剂量辐照试验研究. 结果表明: 在相同累积剂量, SRAM的低剂量率辐照损伤要略大于高剂量率辐照的损伤, 并且低剂量率辐照损伤要远大于高剂量率辐照加与低剂量率辐照时间相同的室温退火后的损伤. 虽然NMOSFET 低剂量率辐照损伤略小于高剂量率辐照损伤, 但室温退火后, 高剂量率辐照损伤同样要远小于低剂量率辐照损伤. 研究结果表明0.18 μm CMOS工艺器件的辐射损伤不是时间相关效应. 利用数值模拟的方法提出了解释CMOS器件剂量率效应的理论模型.     

Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation

Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors(MOSCAPs) with sulfur passivation were investigated and the chemical mechanisms of the sulfur passivation process were carefully studied. It was shown that the sulfur passivation treatment could reduce the interface trap density Ditof the HfAlO/GaSb interface by 35% and reduce the equivalent oxide thickness(EOT) from 8 nm to 4 nm. The improved properties are due to the removal of the native oxide layer, as was proven by x-ray photoelectron spectroscopy measurements and high-resolution cross-sectional transmission electron microscopy(HRXTEM) results. It was also found that GaSb-based MOSCAPs with HfAlO gate dielectrics have interfacial properties superior to those using HfO2 or Al2O3 dielectric layers.     

High-mobility germanium p-MOSFETs by using HCl and(NH_4)_2S surface passivation

To achieve a high-quality high-κ/Ge interfaces for high hole mobility Ge p-MOSFET applications,a simple chemical cleaning and surface passivation scheme is introduced,and Ge p-MOSFETs with effective channel hole mobility up to665 cm2/V·s are demonstrated on a Ge(111) substrate.Moreover,a physical model is proposed to explain the dipole layer formation at the metal–oxide–semiconductor(MOS) interface by analyzing the electrical characteristics of HCl- and(NH4)2S-passivated samples.     

Ge metal oxide semiconductor field effect transistors with optimized Si cap and HfSiO2 high-k metal gate stacks

High mobility metal-oxide-semiconductor-field-effect-transistors (MOSFETs) are demonstrated on high quality epitaxial Si_0.75Ge_0.25 films selectively grown on Si (100) substrates. With a Si cap processed on Si_0.75Ge_0.25 channels, HfSiO₂ high-k gate dielectrics exhibited low C–V hysteresis (<10 mV), interface trap density (7.5 × 10¹⁰), and gate leakage current (∼10⁻²A/cm² at an EOT of 13.4 Å), which are comparable to gate stack on Si channels. The mobility enhancement afforded intrinsically by the Si_0.75Ge_0.25 channel (60%) is further increased by a Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. The Si cap process also mitigates the low potential barrier issues of Si_0.75Ge_0.25 channels, which are major causes of the high off-state current of small band gap energy Si_0.75Ge_0.25 pMOSFETs, by improving gate control over the channel.