Thickness dependence of grain size and surface roughness for dc magnetron sputtered Au films

<正>The grain size and surface morphology of sputtered Au films are studied by x-ray diffraction and atomic force microscope.For as-deposited samples the grain growth mechanism is consistent with the two-dimensional(2D) theory, which gives relatively low diffusion coefficient during deposition.The annealing process demonstrates the secondary grain growth mechanism in which the thickness dependence of grain boundary energy plays a key role.The surface roughness increases with the increase of grain size.     

High pressure studies on the electrical resistivity of Ge–Te–Tl glasses

The variation of electrical resistivity in the system of glasses Ge₁₇Te_83?xTl_x, with (1≤x≤13), has been studied as a function of high pressure for pressures up to 10 GPa. It is found that the normalized electrical resistivity decreases continuously with the increase in pressure and shows a sudden drop at a particular pressure (transition pressure), indicating the presence of a transition from semiconductor to near-metallic at these pressures which are in the range 3.0–5.0 GPa. This transition pressure is seen to decrease with the increase in the percentage content of thallium due to increasing metallicity of the thallium. The transition is reversible under application of pressure and X-ray diffraction of samples recovered after pressurization show that they remain amorphous after undergoing a pressurization decompression cycle.     

Phase transformation and electrical resistivity of tetracyanoethylene under pressure

This paper reports the phase transformation behaviour of tetracyanoethylene (TCNE) under pressure as revealed by AC electrical resistivity, its time evolution and X-ray diffraction studies. An irreversible transformation from monoclinic to cubic phase occurs at 2.1±0.1 GPa and is indicated by a sharp resistivity drop at this pressure. The time evolution of resistivity studies indicate that this transformation occurs via an intermediate phase having resistivity higher than either of the two crystalline phases. Finally, the kinetics of phase transformations obtained by time evolution of resistivity is compared with the X-ray studies on the pressure quenched TCNE.     

Analyzing in-plane magnetic anisotropy from surface morphology for amorphous films

A method is developed to analyze the in-plane magnetic anisotropy from surface morphology for amorphous films. The lateral sizes along radial direction (R_RD) and tangent direction (R_TD) of rotational substrate, which are extracted from the surface morphology of Co_66.3Zr_33.7 amorphous films, are used to calculate stress anisotropy energy E_σ. It is found that E_σ is consistent with the magnetic anisotropy energy K_μ for the samples deposited on Si (1 0 0) substrate and then a relationship K_μ ∝ 1/R_RD − 1/R_TD can be obtained. This method is sensitive to the initial state of substrate so its application range is discussed.     

溅射气压对非晶Hg1-xCdx Te薄膜微观结构和化学组分的影响（英文）

采用射频磁控溅射制备了非晶态结构的Hg1-xCdxTe薄膜,并利用台阶仪、XRD、原子力显微镜、EDS等分析手段对薄膜生长速率、物相、表面形貌、组分比例进行了研究。实验结果表明,溅射气压对薄膜生长速率、微观结构、表面形貌和化学组分有直接影响。随着溅射气压增大,其生长速率逐渐降低。当溅射气压高于1.1 Pa时,薄膜XRD图谱上没有出现任何特征衍射峰,只是在2θ=23°附近出现衍射波包,具有明显的非晶态特征;当溅射气压小于1.1 Pa时,XRD谱表现为多晶结构。另外,随着溅射气压的增加,薄膜表面粗糙度逐渐减小,而且溅射气压对薄膜组成的化学计量比有明显影响,当溅射气压为1.1 Pa时,薄膜中Hg的组分比最低,而Cd组分比最高。     

Structural, morphology and electrical properties of layered copper selenide thin film

Thin films of copper selenide (CuSe) were physically deposited layer-by-layer up to 5 layers using thermal evaporation technique onto a glass substrate. Various film properties, including the thickness, structure, morphology, surface roughness, average grain size and electrical conductivity are studied and discussed. These properties are characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), ellipsometer and 4 point probe at room temperature. The dependence of electrical conductivity, surface roughness, and average grain size on number of layers deposited is discussed.      

High pressure studies on the electrical resistivity of As–Te–bond Si glasses and the effect of network topological thresholds

The variation of resistivity in an amorphous As₃₀Te_70?x Si _x system of glasses with high pressure has been studied for pressures up to 8 GPa. It is found that the electrical resistivity and the conduction activation energy decrease continuously with increase in pressure, and samples become metallic in the pressure range 1.0–2.0 GPa. Temperature variation studies carried out at a pressure of 0.92 GPa show that the activation energies lie in the range 0.16–0.18 eV. Studies on the composition/average co-ordination number ? r? dependence of normalized electrical resistivity at different pressures indicate that rigidity percolation is extended, the onset of the intermediate phase is around ? r?=2.44, and completion at ? r?=2.56, respectively, while the chemical threshold is at ? r?=2.67. These results compare favorably with those obtained from electrical switching and differential scanning calorimetric studies.     

工作气压对磁控溅射ZnO薄膜结晶特性及生长行为的影响

采用射频反应磁控溅射方法，在Si(001)基片上制备了具有高c轴择优取向的ZnO薄膜.利用原子力显微镜、X射线衍射、透射电子显微镜和透射光谱分析技术，对不同工作气压下合成的ZnO薄膜的表面形貌、微观结构和光学性能进行表征，研究了工作气压对ZnO薄膜的结晶性能以及生长行为的影响.研究结果显示：对于Ar/O₂流量比例接近1∶1的固定比值下，ZnO薄膜的生长行为主要取决于成膜空间中氧的密度，临界工作气压介于0.5—1.0 Pa之间.当工作气压小于临界值时，ZnO薄膜的成核密度较高，且随工作气压的变化明显，ZnO的生长行为受控于氧的密度，属于氧支配的薄膜生长；当工作气压大于临界值以后，ZnO薄膜的成核密度基本保持不变，Zn原子的数量决定薄膜的生长速率；在0.1—5.0 Pa的工作气压范围内，均可获得高度c轴取向的ZnO薄膜，但工作气压的变化改变着ZnO晶粒之间的界面特征和取向关系.随着工作气压的增加，ZnO晶粒之间的界面失配缺陷减少，但平面织构特征逐渐消失，三叉晶界的空洞逐渐扩大，薄膜的密度下降，折射率减小. 关键词： ZnO薄膜 磁控溅射 表面形貌 微观结构 光学性能     

Structural,optical,and electrical properties of Cu-doped ZrO_2 films prepared by magnetron co-sputtering

Copper(Cu)-doped ZrO_2(CZO) films with different Cu content(0 at.%～ 8.07 at.%) are successfully deposited on Si(100) substrates by direct current(DC) and radio frequency(RF) magnetron co-sputtering. The influences of Cu content on structural, morphological, optical and electrical properties of CZO films are discussed in detail. The CZO films exhibit ZrO_2 monocline(ˉ111) preferred orientation, which indicates that Cu atoms are doped in ZrO_2 host lattice. The crystallite size estimated form x-ray diffraction(XRD) increases by Cu doping, which accords with the result observed from the scanning electron microscope(SEM). The electrical resistivity decreases from 2.63 ?.cm to 1.48 ?·cm with Cu doping content increasing, which indicates that the conductivity of CZO film is improved. However, the visible light transmittances decrease slightly by Cu doping and the optical band gap values decrease from 4.64 eV to 4.48 eV for CZO films.     

B掺杂对Ti薄膜结构与性能的影响

采用双靶共溅射方法制备了微量B掺杂的Ti薄膜样品, 利用X射线光电子能谱、扫描电子显微镜和X射线衍射仪对样品的掺杂原子浓度、 表面形貌、晶型结构、晶粒尺寸和应力进行了分析表征. 研究表明: 掺杂后的Ti薄膜晶粒得到明显细化, 并随着掺杂浓度的增大, 薄膜的晶粒尺寸呈减小趋势, 当掺杂浓度为5.50 at%时, Ti薄膜晶粒尺寸减小为1.3 nm, 呈现出致密的柱状结构. B掺杂后的Ti薄膜应力由压应力转变为张应力.     

Structural, electrical, and optical properties of ZnInO alloy thin films

Indium zinc oxide (IZO) thin films with different percentages of In content (In/[In+Zn]) are synthesized on glass substrates by magnetron sputtering, and the structural, electrical and optical properties of IZO thin films deposited at different In₂O₃ target powers are investigated. IZO thin films grown at different In₂O₃ target sputtering powers show evident morphological variation and different grain sizes. As the In₂O₃ sputtering power rises, the grain size becomes larger and electrical mobility increases. The film grown with an In₂O₃ target power of 100 W displays the highest electrical mobility of 13.5 cm·V^-1·s^-1 and the lowest resistivity of 2.4 × 10^-3 Ω·cm. The average optical transmittance of the IZO thin film in the visible region reaches 80% and the band gap broadens with the increase of In₂O₃ target power, which is attributed to the increase in carrier concentration and is in accordance with Burstein-Moss shift theory.     

纳米VOx薄膜在空气中的电学特性退化研究

采用射频磁控溅射法在氮化硅衬底上沉积纳米VO_x薄膜,利用X射线衍射、原子力显微镜分别对薄膜的结晶形态及表面形貌进行表征.研究了纳米VO_x薄膜在空气中长时间暴露后的方块电阻、热滞回线等电学特性的变化情况,并分析这些变化给器件带来的影响.利用X射线光电子能谱仪、傅里叶变换红外光谱仪分析对比新制与久置薄膜的组分及分子结构差异.研究表明,暴露在空气中的纳米VO_x薄膜方块电阻增大是因为低价钒离子被吸附氧原子氧 关键词： x薄膜')" href="#">纳米VO_x薄膜 磁控溅射 电学特性 退化     

表面形貌对GaAs生长速率测量的影响

本文利用Reflection High Energy Electron Diffraction (RHEED)强度振荡测量GaAs同质外延生长,发现其生长速率随生长厚度按一定指数函数关系衰减.这种衰减与GaAs表面形貌的变化密切相关,表面台阶数量的增加使层状生长模式由2D成核模式逐渐转变为台阶流模式.由于RHEED强度振荡所测的生长速率与表面的粗糙程度密切相关,表面情况改变对生长速率会有一定的影响,导致测量的生长速率逐渐的衰减.根据生长速率随生长厚度的增加而衰减的拟合曲线,可以获得一个准确的生长速率.     

The influence of substrate temperature on the morphology, optical and electrical properties of thermal-evaporated ZnTe Thin Films

The structural, morphological, optical and electrical properties of ZnTe films deposited by evaporation were investigated as a function of substrate temperature (at −123 and 27 °C) and post-deposition annealing temperature (at 200, 300 and 400 °C). It was determined that films deposited at both substrate temperatures were polycrystalline in nature with zinc-blende structure and a strong (1 1 1) texture. A small Te peak was detected in XRD spectra for both substrate temperatures, indicating that as-deposited ZnTe films were slightly rich in Te. Larger grains and a tighter grain size distribution were obtained with increased substrate temperature. Scanning electron microscopy (SEM) studies showed that the microstructures of the as-deposited films agreed well with the expectations from structure zone model. Post-deposition annealing induced further grain growth and tightened the grain size distribution. Annealing at 400 °C resulted in randomization in the texture of films deposited at both substrate temperatures. Optical spectroscopy results of the films indicated that the optical band gap value increased from 2.13 to 2.16 eV with increased substrate temperature. Increasing the annealing temperature sharpened the band-edge. Resistivity measurements showed that the resistivity of films deposited at substrate temperatures of −123 and 27 °C were 32 Ω cm, and 1.0 × 10⁴ Ω cm, respectively with corresponding carrier concentrations of 8.9 × 10¹⁵ cm⁻³ and 1.5 × 10¹⁴ cm⁻³. Annealing caused opposite changes in the film resistivity between the samples prepared at substrate temperatures of −123 and 27 °C.     

电磁感应式液固态金属电阻率定性测量装置及应用

介绍了一种自主研制的非接触式电阻率测量装置,该装置基于电磁感应原理,可实现降温过程中金属从液态到固态各阶段电阻率的定性测量,为实时表征金属材料的结构变化提供了一种有效的测量工具.详细介绍了该装置的设计原理及其结构,同时利用该装置,测量了金属Zn,Sb以及过共晶Zn-70 wt.% Sb合金降温过程中电阻率随温度的变化情况,验证了该装置的可靠性. 关键词： 电阻率 电磁感应 液态金属 结构转变     

氘化及氦离子注入对钪膜的表面形貌和相结构的影响

采用XRD, SEM, AFM等详细研究了氘化及氦离子注入对钪膜的表面形貌和相结构的影响. 结果表明,在单晶硅及抛光Mo基片上制备的钪膜均具有(002)晶面择优取向;钪膜氘化后表面会出现大量孔洞, 氘化后氘化钪(ScD₂)晶粒长大,但内部会残留少量未完全氘化反应的晶粒尺寸较小的 ScD_0.33/Sc晶粒;氦离子注入对钪及氘化钪的表面形貌没有明显影响, 离子注入的氦将在钪及氘化钪晶格中聚集成泡,导致氦离子注入层中的钪及氘化钪衍射峰向低角度偏移, 并且氦泡的聚集具有择优取向性.     

Effect of annealing on electrical resistivity of rf-magnetron sputtered nanostructured SnO2 thin films

Tin oxide (SnO₂) thin films were deposited by radio frequency (RF) magnetron sputtering on clean corning glass substrates. These films were then annealed for 15 min at various temperatures in the range of 100-500°C. The films were investigated by studying their structural and electrical properties. X-ray diffraction (XRD) results suggested that the deposited SnO₂ films were formed by nanoparticles with average particle size in the range of 23-28 nm. XRD patterns of annealed films showed the formation of small amount of SnO phase in the matrix of SnO₂. The initial surface RMS roughness measured with atomic force microscopy (AFM) was 25.76 nm which reduces to 17.72 nm with annealing. Electrical resistivity was measured as a function of annealing temperature and found to lie between 1.25 and 1.38 mΩ cm. RMS roughness and resistivity show almost opposite trend with annealing.     

磁控溅射ZnO薄膜的成核机制及表面形貌演化动力学研究

利用原子力显微镜分析了ZnO薄膜在具有本征氧化层的Si(100)和Si(111)基片上的表面形貌 随沉积时间的演化. 通过对薄膜生长形貌的动力学标度表征，研究了射频反应磁控溅射条件 下，ZnO薄膜的成核过程及生长动力学行为. 研究发现，ZnO在基片表面的成核过程可分为初 期成核阶段、低速率成核阶段和二次成核阶段. 对于Si(100)基片，三个成核阶段的生长指 数分别为β₁=1.04，β₂=0.25±0.01，β₃=0.74；对 于Si(11 关键词： ZnO薄膜 磁控溅射 生长动力学 成核机制     

Effects of the substrate and oxygen partial pressure on the microstructures and optical properties of Ti-doped ZnO thin films

Ti-doped ZnO (ZnO:Ti) thin films were deposited on the glass and Si substrates using radio frequency reactive magnetron sputtering. The effects of substrate on the microstructures and optical properties of ZnO:Ti thin films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and a fluorescence spectrophotometer. The structural analyses of the films indicated that they were polycrystalline and had a hexagonal wurtzite structure on different substrates. When ZnO:Ti thin film was deposited on Si substrate, the film had a c-axis preferred orientation, while preferred orientation of ZnO:Ti thin film deposited on glass substrate changed towards (1 0 0). Finally, we discussed the influence of the oxygen partial pressures on the structural and optical properties of glass-substrate ZnO:Ti thin films. At a high ratio of O₂:Ar of 18:10 sccm, the intensity of (0 0 2) diffraction peak was stronger than that of (1 0 0) diffraction peak, which indicated that preferred orientation changed with the increase of O₂:Ar ratios. The average optical transmittance with over 93% in the visible range was obtained independent of the O₂:Ar ratio. The photoluminescence (PL) spectra measured at room temperature revealed four main emission peaks located at 428, 444, 476 and 527 nm. Intense blue-green luminescence was obtained from the sample deposited at a ratio of O₂:Ar of 14:10 sccm. The results showed that the oxygen partial pressures had an important influence for PL spectra and the origin of these emissions was discussed.     

Influence of deposition pressure and power on characteristics of RF-Sputtered Mo films and investigation of sodium diffusion in the films

Mo films deposited by DC sputtering are widely used as back contact in CIGS and CZTS based thin film solar cells. However, there have been only a few studies on the deposition of Mo films by RF sputtering method. In this context, Mo films on SLG substrates were prepared as a function of deposition pressure and power by using RF magnetron sputtering method to contribute to this shortcoming. Mo films were deposited at 250 °C substrate temperature by using 20, 15, 10 mTorr Ar pressures at 120 W RF power and 10 mTorr Ar pressure at 100 W RF power. Structural, morphological and reflectivity properties of RF-sputtered Mo films were clarified by XRD, AFM, FE-SEM and UV–Vis measurements. In addition, due to sodium incorporation from SLG substrate to the absorber layer through Mo back contact layer is so essential in terms of improving the conversion efficiency values of CIGS and CZTS thin film solar cell devices, the effects of Na diffusion in the films were analyzed with SIMS depth profile. The electrical properties of the films such as mobility, carrier density and resistivity were determined by Hall Effect measurements. It was found that Mo films prepared at 120 W, 10 mtorr and 250 °C substrate temperature and then annealed at 500 °C for 30 min, had resistivity as low as 10⁻⁵ Ω cm, as well as higher amount of Na incorporation than other films.